专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

111. 发明授权

US08992723B2 RF bus and RF return bus for plasma chamber electrode 有权
标题翻译：用于等离子体室电极的RF总线和RF返回总线
公开(公告)号：US08992723B2
公开(公告)日：2015-03-31
申请号：US12705600
申请日：2010-02-13
申请人： Carl A. Sorensen , Jozef Kudela , Robin L. Tiner , Suhail Anwar , John M. White
发明人： Carl A. Sorensen , Jozef Kudela , Robin L. Tiner , Suhail Anwar , John M. White
IPC分类号： H01L21/3065 , C23C16/505 , H01J37/32
CPC分类号： H01J37/32174 , H01J37/32091
摘要： For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.
摘要翻译：为了将来自等离子体室的RF输入的RF功率耦合到等离子体室的内部，RF总线导体连接在RF输入端和等离子体室电极之间。在一个实施例中，RF返回总线导体连接到室的电接地壁，并且RF总线导体和RF返回总线导体具有彼此平行并相对的相应表面。在另一个实施例中，RF总线导体具有垂直于等离子体室电极表面的最长尺寸的横截面，其最接近RF总线导体。

112. 发明授权

US08883269B2 Thin film deposition using microwave plasma 有权
标题翻译：使用微波等离子体的薄膜沉积
公开(公告)号：US08883269B2
公开(公告)日：2014-11-11
申请号：US13331021
申请日：2011-12-20
申请人： Tae Kyung Won , Helinda Nominanda , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Jozef Kudela
发明人： Tae Kyung Won , Helinda Nominanda , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Jozef Kudela
IPC分类号： H05H1/30 , C23C16/34 , C23C16/455 , C23C16/511 , C23C16/54 , H01J37/32
CPC分类号： C23C16/345 , C23C16/45578 , C23C16/511 , C23C16/545 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： A method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power having a power density of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.
摘要翻译：提供了一种在处理室中处理衬底的方法。该方法通常包括对耦合到设置在处理室内的微波源的天线施加微波功率，其中微波源设置在气体馈送源的相对上方，该气体馈送源被配置成提供覆盖基板整个表面的气体分布覆盖，以及将所述衬底暴露于由所述气体供给源提供的处理气体产生的微波等离子体，以在低于约200摄氏度的温度下在所述衬底上沉积含硅层，所述微波等离子体使用具有功率密度在约1GHz至约10GHz的频率下为约500毫瓦/厘米2至约5,000毫瓦/厘米2。

113. 发明授权

US08872428B2 Plasma source with vertical gradient 有权
标题翻译：等离子源与垂直梯度
公开(公告)号：US08872428B2
公开(公告)日：2014-10-28
申请号：US13405297
申请日：2012-02-25
申请人： Jozef Kudela , Tsutomu Tanaka , Suhail Anwar , Carl A. Sorensen , John M. White
发明人： Jozef Kudela , Tsutomu Tanaka , Suhail Anwar , Carl A. Sorensen , John M. White
IPC分类号： H05H1/24 , H05H1/46 , C23C14/02 , C23C14/34 , C23C14/58
CPC分类号： H05H1/46 , C23C14/028 , C23C14/34 , C23C14/58 , H05H2001/4682
摘要： A plasma source includes upper and lower portions. In a first aspect, an electrical power source supplies greater power to the upper portion than to the lower portion. In a second aspect, the plasma source includes three or more power couplers that are spaced apart vertically, wherein the number of plasma power couplers in the upper portion is greater than the number of plasma power couplers in the lower portion. The upper and lower portions of the plasma source can be defined as respectively above and below a horizontal geometric plane that bisects the vertical height of the plasma source. Alternatively, the upper and lower portions can be defined as respectively above and below a horizontal geometric plane that bisects the combined area of first and second workpiece positions.
摘要翻译：等离子体源包括上部和下部。在第一方面，电源向上部提供比下部更大的功率。在第二方面，等离子体源包括三个或更多个垂直间隔开的功率耦合器，其中上部中的等离子体功率耦合器的数量大于下部中的等离子体功率耦合器的数量。等离子体源的上部和下部可以分别在等分于等离子体源的垂直高度的水平几何平面之上和之下。或者，上部和下部可以分别在平分第一和第二工件位置的组合区域的水平几何平面的上方和下方。

114. 发明授权

US08853098B2 Substrate support with gas introduction openings 有权
标题翻译：衬底支撑与气体导入孔
公开(公告)号：US08853098B2
公开(公告)日：2014-10-07
申请号：US13401755
申请日：2012-02-21
申请人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
发明人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
IPC分类号： H01L21/00 , H01L21/44 , H01L21/31 , H01L21/469 , H01L21/687 , H01L21/683
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。气袋可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

115. 发明授权

US08728586B2 RF choke for gas delivery to an RF driven electrode in a plasma processing apparatus 有权
标题翻译：射频扼流圈，用于将气体输送到等离子体处理装置中的RF驱动电极
公开(公告)号：US08728586B2
公开(公告)日：2014-05-20
申请号：US12172029
申请日：2008-07-11
申请人： Jozef Kudela , Carl A. Sorensen , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , John M. White
IPC分类号： H05H1/46
CPC分类号： H01F17/06 , C23C16/455 , C23C16/505 , H01F27/08 , H01F2017/065 , H01J37/32082 , H01J37/3244 , H01J2237/0206 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.
摘要翻译：在大面积等离子体处理系统中，工艺气体可以经由可被作为RF电极驱动的喷头组件引入腔室。接地的气体供给管与喷头电气隔离。气体供给管不仅可以提供处理气体，还可以提供从远程等离子体源清洁气体到处理室。气体供给管的内部可以保持在低RF场或零RF场，以避免气体进料管内的过早气体击穿，这可能导致气体源和喷头之间的寄生等离子体形成。通过馈送气体通过RF扼流圈，RF场和处理气体可以通过公共位置被引入处理室，从而简化室设计。

116. 发明授权

US08567756B2 Slit valve door able to compensate for chamber deflection 有权
标题翻译：狭缝阀门能够补偿室偏转
公开(公告)号：US08567756B2
公开(公告)日：2013-10-29
申请号：US12548553
申请日：2009-08-27
申请人： Mehran Behdjat , Shinichi Kurita , John M. White , Suhail Anwar , Makoto Inagawa
发明人： Mehran Behdjat , Shinichi Kurita , John M. White , Suhail Anwar , Makoto Inagawa
IPC分类号： F16K25/00
CPC分类号： H01L21/67201 , F16K15/147 , F16K51/02 , H01L21/67126
摘要： Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.
摘要翻译：本文公开的实施例通常涉及用于密封腔室中的开口的狭缝阀门组件。当狭缝阀开口收缩时，被压靠在腔室上以密封狭缝阀开口的狭缝阀门随着腔室移动，使得压紧在狭缝阀门和腔室之间的O形环可以与狭缝阀门一起移动，并且房间。因此，可能会发生O形环相对于室的摩擦较少。随着摩擦的减少，可能产生更少的颗粒，并且可以延长O形环的寿命。随着O形圈的寿命更长，衬底产量可能会增加。

117. 发明申请

US20130263782A1 FLIP EDGE SHADOW FRAME 审中-公开
标题翻译：卷边边框
公开(公告)号：US20130263782A1
公开(公告)日：2013-10-10
申请号：US13569064
申请日：2012-08-07
申请人： QUNHUA WANG , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
发明人： QUNHUA WANG , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
IPC分类号： C23C16/04
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
摘要翻译：本文描述了用于处理衬底的装置。用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面，以及与阴影框体连接的可拆卸唇缘。可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

118. 发明授权

US08381677B2 Prevention of film deposition on PECVD process chamber wall 有权
标题翻译：防止在PECVD工艺室壁上沉积膜
公开(公告)号：US08381677B2
公开(公告)日：2013-02-26
申请号：US11955575
申请日：2007-12-13
申请人： Beom Soo Park , Robin L. Tiner , Soo Young Choi , John M. White
发明人： Beom Soo Park , Robin L. Tiner , Soo Young Choi , John M. White
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4401 , C23C16/5096 , H01J37/32623 , H01J37/32697
摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.
摘要翻译：提供了一种用于处理衬底的方法和设备。腔室主体包括腔室底部和具有狭缝阀的侧壁。包括支撑体的基板支撑件设置在室主体中。至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。至少一个延伸杆沿着支撑体的外围边缘定位。该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电的等离子体。

119. 发明授权

US08372205B2 Reducing electrostatic charge by roughening the susceptor 有权
标题翻译：通过粗化基座来减少静电电荷
公开(公告)号：US08372205B2
公开(公告)日：2013-02-12
申请号：US11182168
申请日：2005-07-15
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00
CPC分类号： C23C16/4581 , B24C1/06 , B24C1/10 , B24C3/322 , C23C16/4404 , C23C16/545 , C25D11/04 , C25D11/16 , C25D11/18 , H01J37/32082 , H01J37/32477 , H01J37/32559 , H01J37/32715 , H01L21/68757
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.
摘要翻译：提供了一种基板支撑件及其制造方法。在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。以基板支撑表面为中心的涂层的至少一部分具有介于约200至约2000微英寸之间的表面光洁度。在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于在其上支撑约200至约2000微英寸的衬底。在一个实施例中，衬底支撑组件包括具有衬底支撑表面的导电体，适于支撑导电体的衬底支撑结构，并且导电体被电绝缘涂层覆盖。

120. 发明授权

US08343592B2 Asymmetrical RF drive for electrode of plasma chamber 有权
标题翻译：等离子体室用电极的非对称RF驱动
公开(公告)号：US08343592B2
公开(公告)日：2013-01-01
申请号：US12343519
申请日：2008-12-24
申请人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： H05H1/24 , H01L21/306 , C23C16/00
CPC分类号： H01L21/02 , B44C1/227 , C23C16/513 , H01J37/32091 , H01J37/32577 , H01L21/02104
摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.
摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话）。或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式