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111. 发明申请

US20100042710A1 REMOTE MANAGEMENT OF COMPUTER SYSTEM 审中-公开
标题翻译：计算机系统远程管理
公开(公告)号：US20100042710A1
公开(公告)日：2010-02-18
申请号：US12539716
申请日：2009-08-12
申请人： Chih-Lung Lin
发明人： Chih-Lung Lin
IPC分类号： G06F15/177
CPC分类号： H04L67/125 , G06F9/4416 , H04L41/00
摘要： A computer system is remotely managed by a console. The computer system includes a central processing unit, a chipset, a network chip, an embedded controller and a basic input output system. The chipset communicates with the central processing unit. The network chip communicates with the chipset. The embedded controller communicates with the network chip and the chipset. The basic input output system communicates with the chipset. The embedded controller is connected to the Internet through the network chip to acquire a fixed IP address or a dynamic address, thereby exchanging data with the console through the Internet.
摘要翻译：计算机系统由控制台进行远程管理。计算机系统包括中央处理单元，芯片组，网络芯片，嵌入式控制器和基本输入输出系统。芯片组与中央处理单元通信。网络芯片与芯片组通信。嵌入式控制器与网络芯片和芯片组进行通信。基本输入输出系统与芯片组通信。嵌入式控制器通过网络芯片连接到互联网，以获取固定的IP地址或动态地址，从而通过互联网与控制台交换数据。

112. 发明申请

US20090290107A1 Transflective liquid crystal display 有权
标题翻译：透光液晶显示屏
公开(公告)号：US20090290107A1
公开(公告)日：2009-11-26
申请号：US12454872
申请日：2009-05-26
申请人： Chih-Lung Lin , Rui-Jie Hsiang , Ying-Ling Chen , I-An Yao , Wei-Yi Ling , Chueh-Ju Chen
发明人： Chih-Lung Lin , Rui-Jie Hsiang , Ying-Ling Chen , I-An Yao , Wei-Yi Ling , Chueh-Ju Chen
IPC分类号： G02F1/1335
CPC分类号： G02F1/1343 , G02F1/133555
摘要： A transflective liquid crystal display (LCD) includes a plurality of pixel regions. Each pixel region includes a transparent electrode receiving a gray voltage and a plurality of electrically floating reflectors. The transparent electrode includes a plurality of openings corresponding to the reflectors. The reflectors are disposed on the corresponding openings.
摘要翻译：半透射型液晶显示器（LCD）包括多个像素区域。每个像素区域包括接收灰度电压的透明电极和多个电浮置反射器。透明电极包括对应于反射器的多个开口。反射器设置在相应的开口上。

113. 发明申请

US20080304562A1 Adaptive selection of picture-level quantization parameters for predicted video pictures 有权
标题翻译：用于预测视频图像的图像级量化参数的自适应选择
公开(公告)号：US20080304562A1
公开(公告)日：2008-12-11
申请号：US11810346
申请日：2007-06-05
申请人： Cheng Chang , Chih-Lung Lin
发明人： Cheng Chang , Chih-Lung Lin
IPC分类号： H04B7/12
CPC分类号： H04N19/85 , H04N19/124 , H04N19/132 , H04N19/137 , H04N19/14 , H04N19/146 , H04N19/159 , H04N19/172 , H04N19/177 , H04N19/194 , H04N19/61
摘要： Techniques and tools for adaptive selection of picture quantization parameters (“QPs”) for predicted pictures are described. For example, a video encoder adaptively selects a delta QP for a B-picture based on spatial complexity, temporal complexity, whether differential quantization is active, whether the B-picture is available as a reference picture, or some combination or subset of these or other factors. The delta QP can then be used to adjust the picture QP for the B-picture (e.g., to reduce bit rate for the B-picture without appreciably reducing the perceived quality of a video sequence.
摘要翻译：描述了用于预测图像的图像量化参数（“QP”）的自适应选择的技术和工具。例如，视频编码器基于空间复杂度，时间复杂度，差分量化有效，B图像是否可用作参考图像，或者这些的某些组合或子集，自适应地选择用于B图像的增量QP，或者其他因素。然后可以使用增量QP来调整B图像的图像QP（例如，为了降低B图像的比特率而不会明显地降低视频序列的感知质量。

114. 发明申请

US20070249159A1 Method for forming dielectric film to improve adhesion of low-k film 有权
标题翻译：用于形成介电膜以改善低k膜的粘附性的方法
公开(公告)号：US20070249159A1
公开(公告)日：2007-10-25
申请号：US11409658
申请日：2006-04-24
申请人： Fang Tsai , I-I Chen , Zhen-Cheng Wu , Chih-Lung Lin , Tien-I Bao , Shwang-Ming Jeng , Chen-Hua Yu
发明人： Fang Tsai , I-I Chen , Zhen-Cheng Wu , Chih-Lung Lin , Tien-I Bao , Shwang-Ming Jeng , Chen-Hua Yu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76832 , H01L21/76843
摘要： A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.
摘要翻译：提供了具有改进的低k电介质层和下层之间的粘附性的半导体结构及其形成方法。所述半导体衬底包括半导体衬底上的电介质层，所述电介质层上的粘合层，其中所述粘合层包含初始子层上的过渡子层，并且其中所述过渡子层具有逐渐从下部到上部。在粘合层上形成低k电介质层。在低k电介质层中形成镶嵌开口。过渡子层的顶部具有与低k电介质层的组成基本相似的组成。过渡子层的底部具有与初始子层的组成基本相似的组成。

115. 发明申请

US20050282350A1 Atomic layer deposition for filling a gap between devices 审中-公开
标题翻译：用于填充器件间隙的原子层沉积
公开(公告)号：US20050282350A1
公开(公告)日：2005-12-22
申请号：US10873505
申请日：2004-06-22
申请人： You-Hua Chou , Joung-Wei Liou , Kuang-Yuan Hsu , Chih-Lung Lin , Cheng-Yuan Tsai
发明人： You-Hua Chou , Joung-Wei Liou , Kuang-Yuan Hsu , Chih-Lung Lin , Cheng-Yuan Tsai
IPC分类号： H01L21/314 , H01L21/316 , H01L21/76 , H01L21/768 , H01L21/8238
CPC分类号： H01L21/76837 , H01L21/02129 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31625 , H01L21/76832 , H01L21/823878
摘要： A method is provided for filling a trench or gap between a pair of semiconductor devices formed above a substrate. A liner is applied in a trench or gap between a pair of devices by atomic layer deposition to partially fill the trench or gap. The trench or gap is filled by a bulk fill process.
摘要翻译：提供了一种用于填充形成在衬底上方的一对半导体器件之间的沟槽或间隙的方法。通过原子层沉积将衬垫施加在一对器件之间的沟槽或间隙中，以部分填充沟槽或间隙。沟槽或间隙通过填充过程填充。

116. 发明申请

US20050020936A1 Mobile phone with fat measuring function and the fat measuring method thereof 失效
标题翻译：具有脂肪测量功能的手机及其脂肪测量方法
公开(公告)号：US20050020936A1
公开(公告)日：2005-01-27
申请号：US10868356
申请日：2004-06-16
申请人： Chih-Lung Lin
发明人： Chih-Lung Lin
IPC分类号： A61B5/053 , A61B5/05
CPC分类号： A61B5/6887 , A61B5/0537
摘要： A mobile phone with fat measuring function including a mobile phone control module, a display device, a fat measuring control circuit, a constant current electrode pair and a voltage measuring electrode pair is provided. Both the display device and the fat measuring control circuit are coupled to the mobile phone control module, while both constant current electrode pair and voltage measuring electrode pair are coupled to the fat measuring control circuit. When the user touches the constant current electrode pair and the voltage measuring electrode pair, the fat measuring control circuit firstly applies a predetermined current to the constant current electrode pair. The predetermined current causes the voltage measuring electrode pair to generate a measured voltage. The user's body fat percentage is then generated according to the measured voltage and the user's weight data, and the body fat percentage is displayed on the display device.
摘要翻译：本发明提供具有手机控制模块，显示装置，脂肪测量控制电路，恒流电极对和电压测量电极对的具有脂肪测量功能的手机。显示装置和脂肪测量控制电路都耦合到移动电话控制模块，而恒流电极对和电压测量电极对均耦合到脂肪测量控制电路。当用户触摸恒流电极对和电压测量电极对时，脂肪测量控制电路首先向恒流电极对施加预定电流。预定电流使得电压测量电极对产生测量电压。然后根据测量的电压和用户的体重数据生成用户的身体脂肪百分比，并且在显示装置上显示身体脂肪百分比。

117. 发明授权

US06800510B2 Method of controlling storage capacitor's capacitance of thin film transistor liquid crystal display 有权
标题翻译：控制存储电容器薄膜晶体管液晶显示器电容的方法
公开(公告)号：US06800510B2
公开(公告)日：2004-10-05
申请号：US10289470
申请日：2002-11-06
申请人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
发明人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
IPC分类号： H01L2100
CPC分类号： H01L27/1248 , G02F1/136213 , H01L27/1255 , H01L29/42384
摘要： A method of controlling the capacitance of the TFT-LCD storage capacitor is provided. The gate dielectric layer of the TFT is composed of a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when a doped and an undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled; thereby the capacitance of the storage capacitor can be controlled.
摘要翻译：提供了一种控制TFT-LCD存储电容器的电容的方法。 TFT的栅介质层由氮化硅层，电介质层和氮化硅层组成，非晶硅层在电介质层上的蚀刻选择性不小于约5.0。因此，当蚀刻掺杂的和未掺杂的非晶硅层以形成源极/漏极堆叠层时或者蚀刻导电层以在栅极介电层上形成栅极时，介电层可以是蚀刻停止层。因此，可以控制介电层厚度; 从而可以控制存储电容器的电容。

118. 发明授权

US06563953B2 Predictive image compression using a single variable length code for both the luminance and chrominance blocks for each macroblock 有权
公开(公告)号：US06563953B2
公开(公告)日：2003-05-13
申请号：US09201272
申请日：1998-11-30
申请人： Chih-Lung Lin , Ming-Chieh Lee
发明人： Chih-Lung Lin , Ming-Chieh Lee
IPC分类号： G06K936
CPC分类号： H04N19/20 , H04N19/157 , H04N19/159 , H04N19/172 , H04N19/176 , H04N19/186 , H04N19/196 , H04N19/197 , H04N19/46 , H04N19/463 , H04N19/51 , H04N19/593 , H04N19/61 , H04N19/70
摘要： The coded block parameters used to code blocks of image samples into structures called macroblocks are compressed more efficiently by exploiting the correlation between chrominance and luminance blocks in each macroblock. In particular, the coded block pattern for chrominance and luminance are combined into a single parameter for the macroblock and jointly coded with a single variable length code. To further enhance coding efficiency, the spatial coherence of coded block patterns can be exploited by using spatial prediction to compute predicted values for coded block pattern parameters.

119. 发明授权

US06300248B1 On-chip pad conditioning for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的片上衬垫调理
公开(公告)号：US06300248B1
公开(公告)日：2001-10-09
申请号：US09366227
申请日：1999-08-03
申请人： Chih-Lung Lin , Pei-Yu Chen
发明人： Chih-Lung Lin , Pei-Yu Chen
IPC分类号： H01L21302
CPC分类号： B24B53/017 , H01L21/31053
摘要： A method for on-chip polishing pad conditioning in a chemical mechanical polishing process is disclosed. In the method, a plurality of dummy patterns in a designated area on a wafer surface are planted during the same photolithographic method for forming the IC dies. The designated area may be the edge portion, i.e., the blanket area along the edges of a wafer, or the scribe lines formed on the wafer. The dummy patterns should be formed to a step height of at least 2,000 Å, and preferably to at least 4,000 Å. The present invention plurality of dummy patterns is used during a polishing process for the top surface of a semiconductor wafer by a polishing pad. The plurality of dummy patterns simultaneously conditions the pad in a localized manner to improve the removal rate of the pad. The shape of the dummy patterns can be formed in any desirable shape, including those that have a cross-section of a square or a rectangle with a width of at least 100 Å.
摘要翻译：公开了一种在化学机械抛光工艺中的片上抛光垫调节方法。在该方法中，在用于形成IC芯片的相同的光刻方法中，植入在晶片表面上的指定区域中的多个虚拟图案。指定区域可以是边缘部分，即沿着晶片边缘的橡皮布区域，或者形成在晶片上的划线。虚拟图案应形成为至少2000埃，优选至少4,000埃的台阶高度。本发明通过抛光垫在半导体晶片的顶表面的抛光工艺期间使用多个虚拟图案。多个虚拟图案以局部方式同时对焊盘进行调节以提高焊盘的去除速率。虚拟图案的形状可以形成为任何期望的形状，包括具有至少为100埃的宽度为正方形或矩形的横截面的形状。

120. 发明授权

US6132565A Magnetron assembly equipped with traversing magnets and method of using 有权
标题翻译：磁控管组件配有横动磁铁和使用方法
公开(公告)号：US6132565A
公开(公告)日：2000-10-17
申请号：US411694
申请日：1999-10-01
申请人： Chih-Lung Lin
发明人： Chih-Lung Lin
IPC分类号： H01J37/34 , C23C14/35
CPC分类号： H01J37/3408
摘要： A magnetron assembly for sputter deposition and a method for using such assembly are described. The novel magnetron assembly is equipped with traversing magnets that are capable of moving in a radial direction toward and away from a center axis of the magnetron simultaneously with the rotational motion of the assembly. The traversing magnets enables a substantially uniform magnetic flux distribution to be formed which leads to not only a more uniform film deposition on a wafer surface, but also a more uniformly consumed metal target surface leading to a longer target life. The non-uniformity of a film deposited in a metal sputtering process frequently seen when using a conventional magnetron assembly is substantially eliminated.
摘要翻译：描述了用于溅射沉积的磁控管组件和使用这种组件的方法。该新颖的磁控管组件配备有横向磁体，该横动磁体能够随着组件的旋转运动而沿径向朝向和离开磁控管的中心轴线移动。横动磁铁能够形成大致均匀的磁通分布，这不仅导致晶片表面上的更均匀的膜沉积，而且导致更均匀地消耗的金属靶表面，导致更长的目标寿命。基本上消除了在使用常规磁控管组件时经常看到的沉积在金属溅射工艺中的膜的不均匀性。

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