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101. 发明授权

US5254211A Method for forming crystals 失效
标题翻译：晶体形成方法
公开(公告)号：US5254211A
公开(公告)日：1993-10-19
申请号：US759768
申请日：1991-09-13
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： C30B19/02 , C30B19/12 , C30B19/06
CPC分类号： C30B19/02 , C30B19/12
摘要： A method of forming a crystal comprises a crystal forming treatment effected by dipping a substrate having a nonnucleation surface having a small nucleation density and a nucleation surface having a larger nucleation density than said nonnucleation surface and an area sufficiently fine to such an extent as to allow only a single nucleus to be formed in a solution containing a monocrystal forming material to thereby allow a monocrystal to grow from only the single nucleus.
摘要翻译：形成晶体的方法包括通过浸渍具有小成核密度的非成核表面的基底和具有比所述非成核表面更大成核密度的成核表面的基底和足够细的面积至允许仅在含有单晶形成材料的溶液中形成的单个核，从而允许单晶仅从单个核生长。

102. 发明授权

US5155058A Method of making semiconductor memory device 失效
标题翻译：制造半导体存储器件的方法
公开(公告)号：US5155058A
公开(公告)日：1992-10-13
申请号：US855498
申请日：1992-03-23
申请人： Shinji Fujiwara , Takao Yonehara
发明人： Shinji Fujiwara , Takao Yonehara
IPC分类号： H01L21/20 , H01L21/822 , H01L27/06
CPC分类号： H01L21/8221 , H01L21/0242 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647 , H01L27/0688
摘要： A semiconductor memory device has plural first transistors constituting an information memory circuit and plural second transistors constituting gate units for controlling information input and output. The plural first transistors and the plural second transistors are formed in mutually overlaying structure across an insulating layer. A heterogeneous material of a nucleation density sufficiently higher than that of the insulating layer and of a size small enough to grow a single nucleus of a semiconductor material is formed on the insulating layer. The transistors positioned on the insulating layer are formed in a monocrystalline or substantially monocrystalline semiconductor layer grown around the single nucleus formed on the different material.
摘要翻译：半导体存储器件具有构成信息存储电路的多个第一晶体管和构成用于控制信息输入和输出的栅极单元的多个第二晶体管。多个第一晶体管和多个第二晶体管跨越绝缘层以相互重叠的结构形成。在绝缘层上形成成核密度足够高于绝缘层的成核密度且尺寸足够小以生长半导体材料的单个核的异质材料。位于绝缘层上的晶体管形成在形成于不同材料上的单个核周围生长的单晶或基本单晶半导体层中。

103. 发明授权

US5094697A Photovoltaic device and method for producing the same 失效
标题翻译：光伏器件及其制造方法
公开(公告)号：US5094697A
公开(公告)日：1992-03-10
申请号：US538007
申请日：1990-06-14
申请人： Akiharu Takabayashi , Takao Yonehara
发明人： Akiharu Takabayashi , Takao Yonehara
IPC分类号： H01L31/04 , H01L21/20 , H01L21/205 , H01L21/36 , H01L31/0352 , H01L31/0392 , H01L31/078 , H01L31/18
CPC分类号： H01L21/0262 , H01L21/02532 , H01L21/02579 , H01L21/02639 , H01L21/02647 , H01L31/03529 , H01L31/03921 , H01L31/078 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic device comprises a substrate having a plurality of conductive surfaces surrounded by an insulating surface, a plurality of first photovoltaic elements having single-crystal layer regions covering said conductive surfaces, and a second photovoltaic element covering said plurality of first photovoltaic elements.The single-crystal layer regions are separated from each other.
摘要翻译：光伏器件包括具有由绝缘表面包围的多个导电表面的衬底，具有覆盖所述导电表面的单晶层区域的多个第一光电元件和覆盖所述多个第一光电元件的第二光电元件。单晶层区域彼此分离。

104. 发明授权

US5013670A Photoelectric converter 失效
标题翻译：光电转换器
公开(公告)号：US5013670A
公开(公告)日：1991-05-07
申请号：US523828
申请日：1990-05-15
申请人： Shiro Arikawa , Takao Yonehara
发明人： Shiro Arikawa , Takao Yonehara
IPC分类号： H01L27/146 , H01L21/20 , H01L31/0216 , H01L31/10 , H01L31/11 , H01L31/113 , H01L31/18 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/3745
CPC分类号： H01L31/02164 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L31/1105 , H01L31/1136 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S148/152
摘要： A photoelectric conversion device includes a light transmissive substrate having a deposition surface and a bottom surface. The bottom surface receives light and passes it through the substrate. A heterogeneous deposition surface is formed on the substrate deposition surface and has a nucleation density higher than the nucleation density of the substrate deposition surface. The heterogeneous deposition surface also has an area dimensioned to permit growth of a single nucleus of a single crystal material. A photoelectric conversion collector is formed of the single crystal material grown on the heterogeneous deposition surface. The collector receives light passed through the substrate bottom surface. Photoresponsive transistor elements are formed in and on the collector for outputting a signal corresponding to the light received by the collector through the bottom of the light transmissive substrate. Thus, electrical wiring and transistor elements are formed on the top of the collector, away from the collector surface which receives the light.
摘要翻译：光电转换装置包括具有沉积表面和底表面的透光基底。底面接收光并将其通过基板。在基板沉积表面上形成非均相沉积表面，其成核密度高于基板沉积表面的成核密度。异质沉积表面还具有尺寸允许单晶材料单核生长的面积。光电转换收集器由在异质沉积表面上生长的单晶材料形成。收集器接收通过基板底面的光。响应晶体管元件形成在集电极上和集电极上，用于输出对应于集电极通过透光基板的底部接收的光的信号。因此，电接线和晶体管元件形成在集电器的顶部，远离收纳光的集电器表面。

105. 发明授权

US09076642B2 High-Throughput batch porous silicon manufacturing equipment design and processing methods 有权
标题翻译：高产量批量多孔硅制造设备的设计和加工方法
公开(公告)号：US09076642B2
公开(公告)日：2015-07-07
申请号：US13244466
申请日：2011-09-24
申请人： Takao Yonehara , Subramanian Tamilmani , Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara
发明人： Takao Yonehara , Subramanian Tamilmani , Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara
IPC分类号： H01L21/02 , C25D11/32 , C25D11/00 , H01L21/67 , H01L31/18
CPC分类号： C25D11/005 , C25D11/32 , C25F3/12 , C25F7/02 , H01L21/0203 , H01L21/67086 , H01L21/67781 , H01L21/68721 , H01L21/68771 , H01L21/68785 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得可以高产率地制造多孔半导体层（由诸如多孔硅的单层或多层多孔半导体制成，包括单孔隙率或多孔隙率层）。一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

106. 发明授权

US08647923B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08647923B2
公开(公告)日：2014-02-11
申请号：US13262915
申请日：2010-04-02
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuo Kawase , Kenji Nakagawa
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuo Kawase , Kenji Nakagawa
IPC分类号： H01L21/00
CPC分类号： H01L25/0657 , H01L21/563 , H01L21/6835 , H01L21/78 , H01L24/12 , H01L24/16 , H01L24/90 , H01L24/94 , H01L24/97 , H01L25/50 , H01L2221/68318 , H01L2221/68363 , H01L2221/68377 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/32145 , H01L2224/73203 , H01L2224/90 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/3025 , H01L2224/81 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.
摘要翻译：一种制造半导体器件的方法包括在第一半导体衬底的表面侧形成多个第一集成电路的步骤; 在形成在设置在第二半导体衬底上的剥离层上的半导体层中形成多个第二集成电路; 键合两个半导体基板，使得电接合部分彼此结合以形成接合结构; 在所述剥离层处将所述第二半导体衬底与所述接合结构分离，以将形成有所述多个第二集成电路的所述半导体层转移到所述第一半导体衬底; 以及切割第一半导体衬底以获得每个包括第一集成电路和第二集成电路的堆叠芯片。

107. 发明授权

US08420501B2 Transfer method of functional region, LED array, LED printer head, and LED printer 有权
标题翻译：功能区转移方式，LED阵列，LED打印头，LED打印机
公开(公告)号：US08420501B2
公开(公告)日：2013-04-16
申请号：US12611739
申请日：2009-11-03
申请人： Takao Yonehara , Yasuyoshi Takai
发明人： Takao Yonehara , Yasuyoshi Takai
IPC分类号： H01L21/52
CPC分类号： H01L33/0079 , B41J2/45 , H01L21/6835 , H01L25/167 , H01L27/153 , H01L2221/68322 , H01L2221/68368 , H01L2924/0002 , H01L2924/00
摘要： A method includes arranging a first bonding layer on a first functional region on a first substrate, or a region on a second substrate, bonding the first functional region to the second substrate through the first bonding layer, subjecting a first release layer to a first process to separate the first substrate from the first functional region at the first release layer, arranging a second bonding layer on a second functional region on the first substrate, or a region on a third substrate, bonding the second functional region to the second or third substrate through the second bonding layer, and subjecting a second release layer to a second process to separate the first substrate from the second functional region at the second release layer.
摘要翻译：一种方法包括：在第一基板上的第一功能区域或第二基板上的区域上布置第一接合层，通过第一接合层将第一功能区域与第二基板接合，使第一释放层进行第一处理在第一释放层处将第一基板与第一功能区域分开，在第一基板上的第二功能区域或第三基板上的区域上布置第二接合层，将第二功能区域结合到第二或第三基板通过第二接合层，并且使第二剥离层进行第二工序，以将第一衬底与第二剥离层处的第二功能区分离。

108. 发明授权

US08415230B2 Method for transferring functional regions, LED array, LED printer head, and LED printer 有权
标题翻译：传输功能区域的方法，LED阵列，LED打印机头和LED打印机
公开(公告)号：US08415230B2
公开(公告)日：2013-04-09
申请号：US13254024
申请日：2010-03-01
申请人： Takao Yonehara , Yasuyoshi Takai
发明人： Takao Yonehara , Yasuyoshi Takai
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： B41J2/45 , H01L21/6835 , H01L24/83 , H01L33/0079 , H01L2221/68359 , H01L2924/14 , H01L2924/3025 , H01L2924/00
摘要： Provided is a method for transferring, onto a second substrate, at least one of functional regions arranged and joined to a first separation layer that is disposed on a first substrate and that becomes separable by a treatment, in which regions on the second substrate where the functional regions are to be transferred have a second separation layer that becomes separable by a treatment. The method includes a step of joining the first substrate to the second substrate by bonding such that the functional regions contact the second separation layer; a step of separating the functional regions from the first substrate at the first separation layer; and a step of, before or after the step of separation, forming separation grooves penetrating through the second substrate and the second separation layer from a surface of the second substrate, the surface being opposite to a surface having the second separation layer thereon.
摘要翻译：提供了一种用于将布置并连接到第一分离层的功能区域中的至少一个转移到第二基板上的方法，第一分离层设置在第一基板上并且通过处理可分离，其中第二基板上的区域要转移功能区域具有可通过处理分离的第二分离层。该方法包括通过接合将第一基板接合到第二基板的步骤，使得功能区域接触第二分离层; 在第一分离层处分离功能区域与第一基板的步骤; 以及在分离步骤之前或之后的步骤，从第二基板的表面形成穿过第二基板和第二分离层的分离槽，该表面与其上具有第二分离层的表面相对。

109. 发明申请

US20120171866A1 SUBSTRATE STRUCTURE INCLUDING FUNCTIONAL REGION AND METHOD FOR TRANSFERRING FUNCTIONAL REGION 有权
标题翻译：基层结构，包括功能区域和转移功能区域的方法
公开(公告)号：US20120171866A1
公开(公告)日：2012-07-05
申请号：US13395202
申请日：2010-09-14
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L21/3105 , B32B3/00 , G03F7/11 , G03F7/20 , G03F7/004
CPC分类号： B41J2/45 , H01L21/187 , H01L33/0079 , H01L2924/00013 , H01L2924/01057 , H01L2924/3025 , Y10T428/24802 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： According to a method for transferring a functional region, at least part of functional regions on separation layers arranged on a first substrate is transferred onto a second substrate, the separation layers being capable of being brought into a separable state by treatment. In a first bonding step, the first substrate is bonded to the second substrate with a dry film resist arranged between the second substrate and the at least part of the functional regions above the first substrate. In an exposure step, at least part of the dry film resist is exposed. In a patterning step, the exposed dry film resist is patterned.
摘要翻译：根据用于转移功能区域的方法，将布置在第一基板上的分离层上的功能区域的至少一部分转移到第二基板上，分离层能够通过处理进入分离状态。在第一接合步骤中，第一衬底与布置在第二衬底和第一衬底上的功能区域的至少部分之间的干膜抗蚀剂结合到第二衬底。在曝光步骤中，暴露干膜抗蚀剂的至少一部分。在图案化步骤中，将曝光的干膜抗蚀剂图案化。

110. 发明授权

US08035668B2 Exposure apparatus and device manufacturing method 有权
标题翻译：曝光装置和装置制造方法
公开(公告)号：US08035668B2
公开(公告)日：2011-10-11
申请号：US11336754
申请日：2006-01-19
申请人： Mitsuro Sugita , Kazuaki Ohmi , Takao Yonehara , Toshihiko Tsuji , Takaaki Terashi , Tohru Kohda , Shinji Tsutsui
发明人： Mitsuro Sugita , Kazuaki Ohmi , Takao Yonehara , Toshihiko Tsuji , Takaaki Terashi , Tohru Kohda , Shinji Tsutsui
IPC分类号： G03G13/04
CPC分类号： G03F7/70275
摘要： An exposure apparatus which forms a pattern on an object. The apparatus includes an exposure head structure in which a plurality of elemental exposure units are arrayed, each elemental exposure unit including (i) at least one light source for emitting exposure light and (ii) an optical element which forms an image of the at least one light source on the object, for exposing the object. Positions of the images of the at least one light source in a direction perpendicular to a surface of the object include plural positions different from each other. A sensor detects a position of the surface of the object and produces a detection result. A controller receives the detection result and controls the exposure head structure such that a pattern is formed on the object by the exposure is selected to expose the object based on the detection result by the sensor.
摘要翻译：在物体上形成图案的曝光装置。该装置包括其中排列多个元素曝光单元的曝光头结构，每个元素曝光单元包括：（i）至少一个用于发射曝光光的光源;以及（ii）至少形成至少一个图像的光学元件对象上的一个光源，用于暴露对象。至少一个光源的图像在垂直于物体表面的方向上的位置包括彼此不同的多个位置。传感器检测物体表面的位置并产生检测结果。控制器接收检测结果并控制曝光头结构，使得通过曝光在物体上形成图案被选择以基于传感器的检测结果来曝光物体。

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