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101. 发明授权

US5512406A Toners of different size for electrophotography 失效
标题翻译：不同大小的电子照相用墨粉
公开(公告)号：US5512406A
公开(公告)日：1996-04-30
申请号：US321903
申请日：1994-10-12
申请人： Kenichi Takeda , Tatsuya Tada , Nobuyuki Itoh , Masao Nakano , Kazuhisa Kemmochi , Isami Itoh
发明人： Kenichi Takeda , Tatsuya Tada , Nobuyuki Itoh , Masao Nakano , Kazuhisa Kemmochi , Isami Itoh
IPC分类号： G03G9/08 , G03G9/097
CPC分类号： G03G9/09725 , G03G9/0819 , G03G9/097 , G03G9/09708
摘要： A toner for electrophotography, comprising toner particles and an additive, is obtained by mixing toners A and B together which are obtained by respectively adding the additive to each of at least two toner particle groups (a) and (b) having different particle size distributions. The average particle size of the toner particle group (a) is smaller than that of the toner particle group (b), and the amount of additive in the toner A is larger than that in the toner B. The toner reduces the differences in development conditions between different particle sizes due to broadening of toner particle size distribution, thereby enabling a stable image quality to be obtained which maintains a high image density for an extended period of time and is relatively free from fog generation in non-image portions.
摘要翻译：通过将调色剂A和B混合在一起，通过将添加剂分别添加到具有不同粒度分布的至少两个调色剂颗粒组（a）和（b）中的每一个而获得的电子照相用调色剂，。调色剂颗粒组（a）的平均粒径小于调色剂颗粒组（b）的平均粒径，并且调色剂A中的添加剂的量大于调色剂B中的添加剂的量。调色剂减少了显影的差异由于调色剂粒度分布的变宽，不同粒径之间的条件，从而能够获得稳定的图像质量，其在长时间内保持高图像密度，并且在非图像部分中相对不产生雾。

102. 发明授权

US09425380B2 Piezoelectric element, multilayered piezoelectric element, liquid discharge head, liquid discharge apparatus, ultrasonic motor, optical apparatus, and electronic apparatus 有权
标题翻译：压电元件，多层压电元件，液体排出头，液体排出装置，超声波马达，光学装置和电子设备
公开(公告)号：US09425380B2
公开(公告)日：2016-08-23
申请号：US14130671
申请日：2012-06-26
申请人： Jumpei Hayashi , Kenichi Takeda , Shinya Koyama , Kenichi Akashi , Tatsuo Furuta
发明人： Jumpei Hayashi , Kenichi Takeda , Shinya Koyama , Kenichi Akashi , Tatsuo Furuta
IPC分类号： H01L41/083 , B41J2/14 , C04B35/468 , C04B35/49 , C04B35/626 , C04B35/634 , H01L41/09 , H01L41/187 , H02N2/10 , H02N2/16
CPC分类号： H01L41/083 , B41J2/14201 , B41J2/14233 , B41J2202/03 , C04B35/4682 , C04B35/49 , C04B35/6261 , C04B35/62685 , C04B35/63416 , C04B2235/3208 , C04B2235/3215 , C04B2235/3236 , C04B2235/3244 , C04B2235/3248 , C04B2235/3262 , C04B2235/40 , C04B2235/449 , C04B2235/652 , C04B2235/6567 , C04B2235/6582 , C04B2235/6584 , C04B2235/72 , C04B2235/768 , C04B2235/77 , C04B2235/78 , C04B2235/785 , C04B2235/786 , C04B2235/79 , C04B2235/80 , C04B2235/85 , H01L41/09 , H01L41/0973 , H01L41/1871 , H02N2/106 , H02N2/163
摘要： A lead-free piezoelectric element that stably operates in a wide operating temperature range contains a lead-free piezoelectric material. The piezoelectric element includes a first electrode, a second electrode, and a piezoelectric material that includes a perovskite-type metal oxide represented by (Ba1-xCax)a(Ti1-yZry)O3 (1.00≦a≦1.01, 0.02≦x≦0.30, 0.020≦y≦0.095, and y≦x) as a main component and manganese incorporated in the perovskite-type metal oxide. The manganese content relative to 100 parts by weight of the perovskite-type metal oxide is 0.02 parts by weight or more and 0.40 parts by weight or less on a metal basis.
摘要翻译：在宽工作温度范围内稳定工作的无铅压电元件包含无铅压电材料。压电元件包括第一电极，第二电极和压电材料，其包括由（Ba1-xCax）a（Ti1-yZry）O3（1.00≤a≤1.01,0.02≤x≤0.30）表示的钙钛矿型金属氧化物，0.020≤y≤0.095，y≤x）作为主要成分，掺入钙钛矿型金属氧化物中的锰。相对于100重量份的钙钛矿型金属氧化物的锰含量为0.02重量份以上且0.40重量份以下。

103. 发明授权

US08212649B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08212649B2
公开(公告)日：2012-07-03
申请号：US13238056
申请日：2011-09-21
申请人： Tsuyoshi Fujiwara , Toshinori Imai , Kenichi Takeda , Hiromi Shimamoto
发明人： Tsuyoshi Fujiwara , Toshinori Imai , Kenichi Takeda , Hiromi Shimamoto
IPC分类号： H01C1/12
CPC分类号： H01L23/5228 , H01L27/0688 , H01L28/24 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.
摘要翻译：根据本发明的半导体器件包括：形成在金属电阻器元件的下表面上的下表面的氧化防止绝缘膜; 形成在所述金属电阻元件的上表面上的上表面氧化防止绝缘膜; 以及侧面氧化防止绝缘膜，其仅在金属电阻元件的侧面附近形成，在与下表面的氧化防止绝缘膜分离的工序中沉积在晶片的整个表面上，进行各向异性蚀刻表面氧化防止绝缘膜。根据本发明，可以防止由于金属电阻元件的氧化引起的电阻值的增加，并且还可以防止金属布线层之间的寄生电容的增加，而不会使制造工艺复杂化。

104. 发明授权

US08040214B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08040214B2
公开(公告)日：2011-10-18
申请号：US12481384
申请日：2009-06-09
申请人： Tsuyoshi Fujiwara , Toshinori Imai , Kenichi Takeda , Hiromi Shimamoto
发明人： Tsuyoshi Fujiwara , Toshinori Imai , Kenichi Takeda , Hiromi Shimamoto
IPC分类号： H01C1/12
CPC分类号： H01L23/5228 , H01L27/0688 , H01L28/24 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.
摘要翻译：根据本发明的半导体器件包括：形成在金属电阻器元件的下表面上的下表面的氧化防止绝缘膜; 形成在所述金属电阻元件的上表面上的上表面氧化防止绝缘膜; 以及侧面氧化防止绝缘膜，其仅在金属电阻元件的侧面附近形成，在与下表面的氧化防止绝缘膜分离的工序中沉积在晶片的整个表面上，进行各向异性蚀刻表面氧化防止绝缘膜。根据本发明，可以防止由于金属电阻元件的氧化引起的电阻值的增加，并且还可以防止金属布线层之间的寄生电容的增加，而不会使制造工艺复杂化。

105. 发明授权

US07495712B2 Television with a disk playback feature and disk playback apparatus 失效
标题翻译：具有磁盘回放功能的电视机和磁盘播放装置
公开(公告)号：US07495712B2
公开(公告)日：2009-02-24
申请号：US11173513
申请日：2005-07-02
申请人： Kenichi Takeda
发明人： Kenichi Takeda
IPC分类号： H04N5/64 , G11B33/02
CPC分类号： H04N5/64 , H04N9/3141
摘要： Disclosed is a television with a disk playback feature, in which the convenience of the slot-in mechanism is preserved and a disk can be unloaded without being damaged by the lid body. A critical point is established on the path of turning of the second point of application of spring force. By the urging force of the torsion spring, the pivoting door can be forced to either open or close the slot, subject to whether or not the second point is beyond the critical point. The slot can be closed positively by the door plate before the second point reaches the critical point. Once the second point goes beyond the critical point, the pivoting door can be swung open without being thrust by the disk. Therefore, resistance during disk unloading is reduced and it can be prevented that a disk is damaged by touching with the door plate.
摘要翻译：公开了具有盘回放特征的电视机，其中保留了插入机构的便利性，并且可以在不被盖体损坏的情况下卸载盘。在第二个弹簧力应用的转弯路径上确定了一个关键点。通过扭转弹簧的推动力，旋转门可以被强制打开或关闭狭槽，受制于第二点是否超过临界点。在第二点到达临界点之前，可以通过门板正确关闭槽。一旦第二点超过了临界点，则可以摆动转动门而不被盘推动。因此，减少盘卸载期间的阻力，并且可以防止通过与门板接触而损坏盘。

106. 发明申请

US20080138979A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：半导体集成电路器件的半导体集成电路器件的制造方法
公开(公告)号：US20080138979A1
公开(公告)日：2008-06-12
申请号：US12018790
申请日：2008-01-23
申请人： Junji NOGUCHI , Naofumi Ohashi , Kenichi Takeda , Tatsuyuki Saito , Hizuru Yamaguchii , Nobuo Owada
发明人： Junji NOGUCHI , Naofumi Ohashi , Kenichi Takeda , Tatsuyuki Saito , Hizuru Yamaguchii , Nobuo Owada
IPC分类号： H01L21/4763
CPC分类号： H01L21/0217 , H01L21/02063 , H01L21/02074 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/3185 , H01L21/3212 , H01L21/32136 , H01L21/67115 , H01L21/68792 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76838 , H01L21/7684 , H01L21/76882 , H01L21/76883 , H01L21/76886 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.
摘要翻译：在形成通过CMP将氧化硅膜39的互连槽40中的Cu互连46a至46e形成之后，然后进行清洗，氧化硅膜39和Cu互连46a至46e的表面是用还原等离子体（氨等离子体）处理。然后，没有真空断裂，连续形成盖膜（氮化硅膜）。该方法使得可以提高通过镶嵌方法形成的铜互连的绝缘击穿电阻（可靠性）。

107. 发明申请

US20080040530A1 Data processing apparatus for controlling access to a memory 有权
标题翻译：用于控制对存储器的访问的数据处理装置
公开(公告)号：US20080040530A1
公开(公告)日：2008-02-14
申请号：US11882855
申请日：2007-08-06
申请人： Kenichi Takeda
发明人： Kenichi Takeda
IPC分类号： G06F13/36
CPC分类号： G06F13/28
摘要： A data processing apparatus contains a first bus connected to a first memory, a first central processing unit (CPU) being accessible to the first memory via the first bus, a first Direct Memory Access (DMA) controller being accessible to the first memory via the first bus, and a monitor circuit connected to the first bus and monitoring addresses transferred on the first bus. The addresses transferred on the first bus are transmitted from the first DMA controller to the first memory via the first bus. The monitor circuit compares the address transferred on the first bus with a preset monitor target address. The CPU acquires the comparison results by the monitor circuit. If the comparison results show an address match, then the CPU accesses the first memory. The CPU can in this way access the first memory at a correct timing.
摘要翻译：数据处理装置包括连接到第一存储器的第一总线，经由第一总线可访问第一存储器的第一中央处理单元（CPU），经由第一存储器可访问的第一直接存储器存取（DMA）控制器，第一总线，以及连接到第一总线的监视电路和监视在第一总线上传送的地址。在第一总线上传送的地址通过第一总线从第一DMA控制器发送到第一存储器。监视器电路将第一总线上传送的地址与预设的监视目标地址进行比较。 CPU通过监视电路获取比较结果。如果比较结果显示地址匹配，则CPU访问第一个内存。 CPU可以以这种方式在正确的时机访问第一个内存。

108. 发明授权

US07279425B2 Polishing method 有权
标题翻译：抛光方法
公开(公告)号：US07279425B2
公开(公告)日：2007-10-09
申请号：US11581375
申请日：2006-10-17
申请人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
发明人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
IPC分类号： H01L21/302
CPC分类号： C23F3/06 , B24B37/04 , C09G1/02 , C09K3/1463 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要翻译：抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

109. 发明申请

US20070056366A1 Flow sensor 有权
标题翻译：流量传感器
公开(公告)号：US20070056366A1
公开(公告)日：2007-03-15
申请号：US11330969
申请日：2006-01-13
申请人： Noriyuki Sakuma , Naoki Yamamoto , Kenichi Takeda , Hiroshi Fukuda
发明人： Noriyuki Sakuma , Naoki Yamamoto , Kenichi Takeda , Hiroshi Fukuda
IPC分类号： G01F1/68
CPC分类号： G01F1/6845 , G01F1/699 , G01P5/10
摘要： The present invention provides a technology capable of achieving a highly-sensitive flow sensor, by forming a metal film having a relatively high TCR on a semiconductor substrate via an insulating film. A measurement device which is a thermal fluid flow sensor includes a heat element, resistance temperature detectors (upstream-side resistance temperature detector and downstream-side resistance temperature detector), and a resistance temperature detector for air which are all formed of a first metal film. The first metal film is formed of an α-Ta film having a resistivity lower than three times the resistivity of a Ta ingot and obtained by deposition through sputtering on an amorphous film containing metal.
摘要翻译：本发明提供一种能够通过在绝缘膜上在半导体衬底上形成具有较高TCR的金属膜来实现高灵敏度的流量传感器的技术。作为热流体流量传感器的测量装置包括热元件，电阻温度检测器（上游侧电阻温度检测器和下游侧电阻温度检测器）以及空气的电阻温度检测器，全部由第一金属膜。第一金属膜由具有低于Ta锭的电阻率的三倍的α-Ta膜形成，并且通过溅射沉积在含有金属的非晶膜上而获得。

110. 发明申请

US20060049723A1 Method for producing piezoelectric film actuator, and composite structure having piezoelectric layer 失效
标题翻译：用于制造压电薄膜致动器的方法和具有压电层的复合结构
公开(公告)号：US20060049723A1
公开(公告)日：2006-03-09
申请号：US11218515
申请日：2005-09-06
申请人： Takehito Okabe , Nobuhiko Sato , Makoto Kurotobi , Kenichi Takeda , Toshihiro Ifuku
发明人： Takehito Okabe , Nobuhiko Sato , Makoto Kurotobi , Kenichi Takeda , Toshihiro Ifuku
IPC分类号： H01L41/08
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1632 , B41J2/1642 , B41J2/1643 , B41J2/1646 , H01L41/1876 , H01L41/332 , Y10T29/42 , Y10T29/435 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155
摘要： A method for producing a piezoelectric film actuator is provided. This method includes the steps of preparing an intermediate transfer member having a porous layer formed thereon, with a vibrating plate and a piezoelectric layer being provided on the porous layer; bonding the vibrating plate to a nozzle substrate to form a composite structure; and separating the intermediate transfer member from the composite structure at the porous layer to transfer the vibrating plate and the piezoelectric layer to the nozzle substrate.
摘要翻译：提供了一种制造压电膜致动器的方法。该方法包括以下步骤：制备其上形成有多孔层的中间转印部件，其中振动板和压电层设置在多孔层上; 将振动板接合到喷嘴基板以形成复合结构; 并在所述多孔层处从所述复合结构分离所述中间转印部件，以将所述振动板和所述压电层转印到所述喷嘴基板。

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