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    • 110. 发明授权
    • Spin-valve type magnetoresistive element capable of preventing barkhausen noise
    • 旋转阀式磁阻元件能够防止巴克豪森噪音
    • US06538860B1
    • 2003-03-25
    • US09644720
    • 2000-08-23
    • Yoshihiko KakiharaKiyoshi Sato
    • Yoshihiko KakiharaKiyoshi Sato
    • G11B539
    • B82Y25/00B82Y10/00G11B5/3903H01F10/3268
    • A magnetoresistive element includes a nonmagnetic conductive layer, first and second ferromagnetic layers which are conductive and which sandwich the nonmagnetic conductive layer, an antiferromagnetic layer magnetically coupled to the first ferromagnetic layer for fixing the magnetization direction of the first ferromagnetic layer, a bias layer magnetically coupled to the second ferromagnetic layer for aligning the magnetization direction of the second ferromagnetic layer in a direction crossing to the magnetization direction of the first ferromagnetic layer, and a pair of electrode layers for applying a sensing current to the first and second ferromagnetic layers and the nonmagnetic conductive layer. The antiferromagnetic layer, the first ferromagnetic layer, the nonmagnetic conductive layer, the second ferromagnetic layer, and the bias layer are deposited in that order. The pair of electrode layers are disposed on both ends of the bias layer, and the bias layer at a position which is not covered by the pair of electrode layers is modified to form a nonmagnetic layer for determining a track width. A method of fabricating the magnetoresistive element is also disclosed.
    • 磁阻元件包括非磁性导电层,第一和第二铁磁层,其是导电的并且夹着非磁性导电层;磁铁耦合到第一铁磁层的反铁磁层,用于固定第一铁磁层的磁化方向;磁性层 耦合到所述第二铁磁层,用于在与所述第一铁磁层的磁化方向交叉的方向上对准所述第二铁磁层的磁化方向;以及一对电极层,用于向所述第一和第二铁磁层施加感测电流, 非磁性导电层。 反铁磁层,第一铁磁层,非磁性导电层,第二铁磁层和偏置层以该顺序沉积。 一对电极层设置在偏置层的两端,并且在未被一对电极层覆盖的位置处的偏置层被修改以形成用于确定轨道宽度的非磁性层。 还公开了制造磁阻元件的方法。