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    • 105. 发明授权
    • Nanowire and larger GaN based HEMTS
    • 纳米线和更大的GaN基HEMTS
    • US08188513B2
    • 2012-05-29
    • US12246044
    • 2008-10-06
    • Stephen D. HerseeXin Wang
    • Stephen D. HerseeXin Wang
    • H01L29/66
    • H01L29/0665B82Y10/00H01L21/02389H01L21/02458H01L21/02513H01L21/0254H01L21/02603H01L21/0262H01L21/02639H01L21/8252H01L27/0605H01L29/2003H01L29/66462H01L29/7787H01L29/7788H01L29/7789
    • Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form III-N post(s) followed by formation of the shell member(s).
    • 提供了纳米线和更大的后置HEMT,这样的HEMT的阵列及其制造方法。 在一个实施例中,HEMT可以包括基于III-N的核 - 壳结构,其包括芯构件(例如,GaN),围绕芯构件的长度的壳构件(例如,AlGaN)和二维电子气 2-DEG)。 包括纳米线和/或柱的芯构件可以设置在掺杂缓冲层上方,并且栅极材料可以围绕壳构件的一部分设置。 用于制造纳米线HEMT和纳米线HEMT阵列的示例性方法可以包括外延形成纳米线并从每个形成的纳米线外延地形成壳部件。 用于制造后HEMT和后HEMT阵列的示例性方法可以包括蚀刻III-N层以形成III-N柱,随后形成壳构件。
    • 106. 发明授权
    • Method and apparatus for computing dummy feature density for chemical-mechanical polishing
    • 用于计算化学机械抛光的虚拟特征密度的方法和装置
    • US08176456B2
    • 2012-05-08
    • US12343958
    • 2008-12-24
    • Xin WangCharles C. ChiangJamil Kawa
    • Xin WangCharles C. ChiangJamil Kawa
    • G06F17/50
    • G06F17/5068G06F2217/12Y02P90/265
    • One embodiment of the present invention provides a system that computes dummy feature density for a CMP (Chemical-Mechanical Polishing) process. Note that the dummy feature density is used to add dummy features to a layout to reduce the post-CMP topography variation. During operation, the system discretizes a layout of an integrated circuit into a plurality of panels. Next, the system computes a feature density and a slack density for the plurality of panels. The system then computes a dummy feature density for the plurality of panels by, iteratively, (a) calculating an effective feature density for the plurality of panels using the feature density and a function that models the CMP process, (b) calculating a filling amount for a set of panels in the plurality of panels using a target feature density, the effective feature density, and the slack density, and (c) updating the feature density, the slack density, and the dummy feature density for the set of panels using the filling amount. In one embodiment of the present invention, the iterative process is guided by a variance-minimizing heuristic to efficiently select the set of panels and assign/remove dummy density to the set of panels to decrease the effective feature density variation.
    • 本发明的一个实施例提供了一种计算CMP(化学机械抛光)工艺的虚拟特征密度的系统。 请注意,虚拟特征密度用于向布局添加虚拟特征以减少CMP后的拓扑变化。 在操作期间,系统将集成电路的布局离散成多个面板。 接下来,系统计算多个面板的特征密度和松弛密度。 然后,系统通过迭代地计算多个面板的虚拟特征密度,(a)使用特征密度计算多个面板的有效特征密度,以及对CMP过程建模的功能,(b)计算填充量 对于使用目标特征密度,有效特征密度和松弛密度的多个面板中的一组面板,以及(c)更新该组面板的特征密度,松弛密度和虚拟特征密度,使用 填充量。 在本发明的一个实施例中,迭代过程由方差最小化启发式引导,以有效地选择面板集合并且将虚空密度分配/去除到该组面板以减小有效特征密度变化。
    • 109. 发明申请
    • Novel Method to Enhance Channel Stress in CMOS Processes
    • 在CMOS工艺中增强沟道应力的新方法
    • US20110300677A1
    • 2011-12-08
    • US13209501
    • 2011-08-15
    • Zhiqiang WuXin Wang
    • Zhiqiang WuXin Wang
    • H01L21/336B82Y40/00
    • H01L29/7833H01L21/26506H01L29/165H01L29/6656H01L29/6659H01L29/7845H01L29/7847H01L29/7848
    • The invention provides a method of fabricating a semiconductor device that enhances the amount of stress that is transmitted to the channel region for carrier mobility enhancement. In one embodiment an amorphous region is formed at or near the gate dielectric interface prior to source/drain anneal. In a second embodiment the gate material is amorphous as deposited and processing temperatures are kept below the gate material crystallization temperature until stress enhancement processing has been completed. The amorphous gate material deforms during high temperature anneal and converts from an amorphous to a polycrystalline phase allowing more stress to be transmitted into the channel region. This enhances carrier mobility and improves transistor drive current.
    • 本发明提供了一种制造半导体器件的方法,该半导体器件增强了传输到沟道区的载流子迁移率增强的应力量。 在一个实施例中,在源极/漏极退火之前,在栅极电介质界面处或附近形成非晶区域。 在第二实施例中,栅极材料是非晶体的,并且处理温度保持低于栅极材料结晶温度,直到应力增强处理完成。 非晶栅极材料在高温退火期间变形,并从非晶态转变为多晶相,允许更多的应力传输到沟道区。 这增强了载流子迁移率并改善了晶体管驱动电流。
    • 110. 发明申请
    • METHOD, MODEM AND SERVER FOR BRIDGING TELEPHONE CALLS INTO INTERNET CALLS
    • 方法,调制解调器和服务器将电话呼叫连接到互联网通话
    • US20110292928A1
    • 2011-12-01
    • US12672360
    • 2008-08-07
    • Aihao YinXin Wang
    • Aihao YinXin Wang
    • H04L12/66
    • H04M7/0057
    • The present invention relates to a method for bridging traffic in analogue channel into digital channel using Asymmetrical Digital Subscriber Line, said method comprises: step of PSTN network connecting, in which caller and callee ADSLs establish PSTN network connection using PSTN signaling in the analogue channel; step of discovering Internet call, in which the caller ADSL sends Internet call setup message to Internet call server, the caller ADSL and the callee ADSL make Internet call discovery procedure on the Internet and determine successful Internet call discovery; step of setting up Internet connection, in which the caller and callee ADSLs set up Internet connection in the digital channel by means of the successful Internet call discovery; step of bridging the PSTN network connection to the Internet, in which the caller and the callee ADSLs bridge the PSTN network connection to the Internet via the Internet connection which has been set up, and release the analogue channel. The invention further relates a modem and a Internet call server used in the method.
    • 本发明涉及一种使用非对称数字用户线路将模拟信道业务桥接成数字信道的方法,所述方法包括:PSTN网络连接步骤,主叫方和被叫方ADSL在模拟信道中使用PSTN信令建立PSTN网络连接; 发起互联网呼叫的步骤,其中呼叫者ADSL向因特网呼叫服务器发送因特网呼叫建立消息,呼叫者ADSL和被呼叫者ADSL在因特网上进行因特网呼叫发现过程,并确定成功的因特网呼叫发现; 建立互联网连接的步骤,其中呼叫者和被叫方ADSL通过成功的因特网呼叫发现在数字频道中建立因特网连接; 桥接PSTN网络连接到互联网的步骤,其中呼叫者和被呼叫者ADSL通过已建立的因特网连接将PSTN网络连接到因特网,并释放模拟频道。 本发明还涉及在该方法中使用的调制解调器和因特网呼叫服务器。