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101. 外观设计

USD375491S Magnetic optical disc cartridge 失效
公开(公告)号：USD375491S
公开(公告)日：1996-11-12
申请号：US36698
申请日：1995-03-24
申请人： Masayuki Hata
设计人： Masayuki Hata

102. 发明授权

US5268596A Method and apparatus for latching data around a logical data processor 失效
标题翻译：用于在逻辑数据处理器周围锁存数据的方法和装置
公开(公告)号：US5268596A
公开(公告)日：1993-12-07
申请号：US791806
申请日：1991-11-13
申请人： Masayuki Hata
发明人： Masayuki Hata
IPC分类号： G06F13/42 , H03K3/012 , H03K3/037 , H03K19/017
CPC分类号： H03K3/012 , H03K3/037
摘要： A control method for a data processing circuit which controls the timing of two clocks which independently control data latch circuits connected respectively with an input side and an output side of a logic circuit. The two clocks are held at a level which allows both data latch circuits to sample an input signal for a predetermined period. A data latch circuit comprises a first gate controlling whether or not an input signal is conducted to the logic circuit, an input end of a buffer circuit for latching the data signal and an output end of a second gate which causes an output of the buffer circuit to pass to an output end of the first gate, and a data processing circuit capable of sampling data, logically processing it, latching the result of the processing, and outputting it in one clock cycle, by interposing a logic circuit between the aforementioned two data latch circuits.
摘要翻译：一种用于控制独立地控制分别与逻辑电路的输入侧和输出侧连接的数据锁存电路的两个时钟的定时的数据处理电路的控制方法。两个时钟保持在允许数据锁存电路在预定时间段内对输入信号进行采样的电平。数据锁存电路包括控制输入信号是否传导到逻辑电路的第一门，用于锁存数据信号的缓冲电路的输入端和引起缓冲电路输出的第二门的输出端传送到第一门的输出端，以及能够对数据进行采样，逻辑处理，锁存处理结果并在一个时钟周期内输出的数据处理电路，通过在上述两个数据之间插入逻辑电路锁存电路。

103. 发明授权

US4908690A Semiconductor integrated circuit device with high reliability wiring layers 失效
标题翻译：具有高可靠性布线层的半导体集成电路器件
公开(公告)号：US4908690A
公开(公告)日：1990-03-13
申请号：US106880
申请日：1987-10-13
申请人： Masayuki Hata , Hiromasa Nakagawa
发明人： Masayuki Hata , Hiromasa Nakagawa
IPC分类号： H01L21/3205 , H01L21/822 , H01L23/52 , H01L23/522 , H01L23/528 , H01L27/04
CPC分类号： H01L23/522 , H01L23/528 , H01L2924/0002
摘要： A semiconductor integrated circuit device includes a semiconductor substrate and a wiring layer formed on the substrate. An output buffer transistor is provided with its gate formed along the direction of the wiring. The resulting device has improved area efficiency and is less susceptible to wiring element slide without requiring slits to be formed in the wiring structure--and thus also has lower current density.
摘要翻译：半导体集成电路器件包括半导体衬底和形成在衬底上的布线层。输出缓冲晶体管设置有沿着布线方向形成的栅极。所得到的器件具有改善的面积效率，并且不易于布线元件滑动，而不需要在布线结构中形成狭缝，并且因此也具有较低的电流密度。

104. 发明授权

US08101465B2 Method of fabricating a semiconductor device with a back electrode 有权
标题翻译：制造具有背面电极的半导体器件的方法
公开(公告)号：US08101465B2
公开(公告)日：2012-01-24
申请号：US11723449
申请日：2007-03-20
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译：提供能够稳定其操作的半导体器件。该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。

105. 发明授权

US07968897B2 Light-emitting device having a support substrate and inclined sides 有权
标题翻译：具有支撑基板和倾斜侧面的发光装置
公开(公告)号：US07968897B2
公开(公告)日：2011-06-28
申请号：US11059508
申请日：2005-02-17
申请人： Masayuki Hata , Tatsuya Kunisato
发明人： Masayuki Hata , Tatsuya Kunisato
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38 , H01L33/405 , H01L2933/0016 , H01L2933/0091
摘要： A light-emitting device capable of improving light extraction efficiency is provided. This light-emitting device comprises a support substrate set on a side opposite to a light emission surface and a semiconductor element layer, bonded to the support substrate, having a side surface inclined by a prescribed angle with respect to at least the normal of the light emission surface.
摘要翻译：提供了能够提高光提取效率的发光装置。该发光装置包括设置在与发光面相反的一侧的支撑基板和结合到支撑基板的半导体元件层，其具有相对于光的至少法线倾斜规定角度的侧表面发射面。

106. 发明申请

US20100189146A1 METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER DEVICE AND LIGHT APPARATUS 失效
标题翻译：制造半导体激光器件，半导体激光器件和光器件的方法
公开(公告)号：US20100189146A1
公开(公告)日：2010-07-29
申请号：US12693169
申请日：2010-01-25
申请人： Yasuyuki Bessho , Hiroki Ohbo , Kunio Takeuchi , Seiichi Tokunaga , Yasumitsu Kunoh , Masayuki Hata
发明人： Yasuyuki Bessho , Hiroki Ohbo , Kunio Takeuchi , Seiichi Tokunaga , Yasumitsu Kunoh , Masayuki Hata
IPC分类号： H01S5/02 , H01L33/00
CPC分类号： H01S5/4043 , B82Y20/00 , G11B7/1275 , G11B7/22 , H01L2224/16145 , H01L2224/48091 , H01L2224/73257 , H01L2224/73265 , H01S5/0202 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/34333 , H01S5/4087 , H04N9/3161 , H01L2924/00014
摘要： A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.
摘要翻译：一种制造半导体激光器件的方法包括以下步骤：形成第一半导体激光器件衬底，其具有用于在其表面上切割的第一凹槽，将第二半导体激光器件衬底接合到具有第一沟槽的表面侧上，然后切割第一和第二沿着至少第一凹槽的半导体激光器件衬底。

107. 发明申请

US20090267100A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20090267100A1
公开(公告)日：2009-10-29
申请号：US12429854
申请日：2009-04-24
申请人： Yasuto Miyake , Ryoji Hiroyama , Masayuki Hata , Yasumitsu Kuno
发明人： Yasuto Miyake , Ryoji Hiroyama , Masayuki Hata , Yasumitsu Kuno
IPC分类号： H01L29/06 , H01L33/00 , H01L21/78
CPC分类号： H01L29/2003 , B82Y20/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/812 , H01L33/20 , H01L33/32 , H01L2224/32145 , H01L2224/45144 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/73265 , H01S5/0201 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S5/34333 , H01S2304/12 , H01L2924/00
摘要： A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.
摘要翻译：氮化物系半导体器件包括基板，形成在基板的第一侧端面的主面侧的第一台阶部，形成在基本上平行于基板的第二侧端面的主面侧的第二台阶部第一侧端面与第一侧端面的相反一侧的第一侧面以及从第一台阶部的第一侧壁开始的第一侧面为（000-1）面的氮化物系半导体层，第二侧面开始从主表面上的第二台阶部分的第二侧壁。

108. 发明申请

US20080298411A1 NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：基于氮化物的半导体激光器件及其制造方法
公开(公告)号：US20080298411A1
公开(公告)日：2008-12-04
申请号：US12128400
申请日：2008-05-28
申请人： Masayuki Hata
发明人： Masayuki Hata
IPC分类号： H01S5/10 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/0287 , H01S5/2201 , H01S5/3202 , H01S5/3203
摘要： A nitride-based semiconductor laser device includes an optical waveguide extending substantially parallel to a [0001] direction of a nitride-based semiconductor layer, a forward end face located on a forward end of the optical waveguide and formed by a substantially (0001) plane of the nitride-based semiconductor layer and a rear end face located on a rear end of the optical waveguide and formed by a substantially (000-1) plane of the nitride-based semiconductor layer, wherein an intensity of a laser beam emitted from the forward end face is rendered larger than an intensity of a laser beam emitted from the rear end face.
摘要翻译：基于氮化物的半导体激光器件包括基本上平行于氮化物基半导体层的[0001]方向延伸的光波导，位于光波导的前端的前端面，由大致（0001）面和位于所述光波导的后端并由所述氮化物基半导体层的大致（000-1）面形成的后端面，其中，从所述氮化物系半导体层的发射强度使前端面比从后端面发射的激光束的强度大。

109. 发明授权

US07355208B2 Nitride-based semiconductor element and method of forming nitride-based semiconductor 有权
公开(公告)号：US07355208B2
公开(公告)日：2008-04-08
申请号：US11195637
申请日：2005-08-03
申请人： Masayuki Hata , Tatsuya Kunisato , Nobuhiko Hayashi
发明人： Masayuki Hata , Tatsuya Kunisato , Nobuhiko Hayashi
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01S5/0207 , H01S5/22 , H01S5/2214 , H01S5/227 , H01S5/34333 , H01S2304/12
摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

110. 发明申请

US20070228923A1 Illumination device and manufacturing method thereof 有权
标题翻译：照明装置及其制造方法
公开(公告)号：US20070228923A1
公开(公告)日：2007-10-04
申请号：US11710405
申请日：2007-02-26
申请人： Seiichi Tokunaga , Tatsuya Kunisato , Takenori Goto , Masayuki Hata
发明人： Seiichi Tokunaga , Tatsuya Kunisato , Takenori Goto , Masayuki Hata
IPC分类号： H01J1/62 , H01J9/02
CPC分类号： F21S8/00 , F21Y2105/10 , F21Y2105/12 , F21Y2113/13 , F21Y2115/10
摘要： Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.
摘要翻译：照明装置具有多个发光单元，每个具有设置在发光元件的发光侧的发光元件和第一荧光体区域。在各发光单元的发光侧设置有多个第二荧光体区域。在多个发光单元中具有相同发光特性的至少一个发光单元的发光侧分别设置具有相同发光转换特性的第二荧光材料区域。

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