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    • 102. 发明申请
    • Method and apparatus for pattern inspection
    • 图案检查方法和装置
    • US20070272857A1
    • 2007-11-29
    • US11698025
    • 2007-01-26
    • Masaki HasegawaHisaya MurakoshiHiroshi Makino
    • Masaki HasegawaHisaya MurakoshiHiroshi Makino
    • G01N23/00
    • H01J37/265G06T7/0004G06T2207/10056G06T2207/30148H01J37/29H01J2237/22H01J2237/24592
    • Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph.
    • 由于用于获得具有镜电子的检查对象图像的镜像电子成像型检查装置难以优化检查条件,因为该装置的图像形成原理与常规SEM型检查装置的图像形成原理不同。 为了解决上述常规问题,本发明使得用户可以通过显示检查速度S,检查对象数字信号图像的值之间的关系来直观地检查诸如检查速度,检查灵敏度等条件 像素尺寸D,检查对象图像尺寸L和图像信号采集周期P,使用时间延迟积分方法作为操作画面上的图形。 因此,用户可以参照所显示的图形容易地确定像素尺寸,检查图像宽度和TDI传感器操作循环的一组值。
    • 103. 发明授权
    • Patterned wafer inspection method and apparatus therefor
    • 图案化晶圆检查方法及其设备
    • US07288948B2
    • 2007-10-30
    • US11016990
    • 2004-12-21
    • Masaki HasegawaHisaya Murakoshi
    • Masaki HasegawaHisaya Murakoshi
    • G01R31/305
    • G01N23/225H01J37/265H01J37/29H01J2237/24585H01J2237/24592
    • A defect inspection apparatus is provided which allows a technology for inspecting a pattern on a wafer by using an electron beam to implement a high-resolution and higher-speed inspection. A semiconductor wafer is irradiated with an electron beam and electrons reflected in the vicinity of the wafer are detected. The presence or absence of a defect and the location thereof are measured by forming an image from only a component which changes with a periodicity larger than a size of a circuit pattern or the repetition periodicity thereof by using lenses and comparing an image signal with a preset value. Since only the component which changes with a periodicity larger than the size of the circuit pattern with a surface potential distortion and the repetition periodicity thereof is observed with a resolution lower than required to observe the pattern itself instead of detecting a defect through a comparison between extremely small pattern images, an inspection throughput can be increased exponentially compared with that of a conventional SEM inspection.
    • 提供了一种缺陷检查装置,其允许通过使用电子束来检查晶片上的图案以实现高分辨率和高速检查的技术。 用电子束照射半导体晶片,并检测在晶片附近反射的电子。 缺陷的存在或不存在以及其位置是通过使用仅使用通过使用透镜的电路图案的尺寸或重复周期的周期性变化的分量形成图像来测量的,并且将图像信号与预设 值。 由于仅以比通过观察图案本身所需的分辨率低的分辨率观察周期性大于具有表面电位失真和重复周期的电路图案的尺寸的分量,而不是通过极端的比较来检测缺陷 与传统SEM检查相比,小图案图像的检查吞吐量可以指数增加。
    • 107. 发明授权
    • Method and apparatus for inspecting integrated circuit pattern using a plurality of charged particle beams
    • 使用多个带电粒子束检查集成电路图案的方法和装置
    • US06476390B1
    • 2002-11-05
    • US09646281
    • 2000-09-15
    • Hisaya MurakoshiYusuke YajimaHiroyuki ShinadaMari NozoeAtsuko TakafujiKaoru UmemuraMasaki HasegawaKatsuhiro Kuroda
    • Hisaya MurakoshiYusuke YajimaHiroyuki ShinadaMari NozoeAtsuko TakafujiKaoru UmemuraMasaki HasegawaKatsuhiro Kuroda
    • G01N2300
    • H01J37/28G01N23/225G01N23/2255H01J2237/16H01J2237/18H01J2237/2817H01L22/12H01L2924/0002H01L2924/00
    • In a pattern inspection device of the present invention having at least three electron-optical systems, detection signals approximately simultaneously obtained from identical circuit patterns are compared with each other. Further, areas around plural electron sources can be maintained at high degrees of vacuum by evacuating an electron gun chamber mounted with plural electron guns independently of a sample chamber. Further, electric fields and magnetic fields are confined in each electron-optical system by a shield electrode which makes it possible to evacuate an electron beam path to a high degree of vacuum, and at the same time, secondary electrons and reflected electrons are detected in the same electron-optical system by setting the samples to a negative voltage and accelerating secondary electrons and reflected electrons toward the electron source side in the direction of the electron beam axis. Thus, defect determination in pattern inspection is performable substantially simultaneously, and at the same time, the throughput of the inspections is improvable in proportion to the number of the electron-optical systems. Further, three or more electron sources are operable in a stable manner in high vacuum states, and signals from closely arranged electron-optical systems are detectable with high accuracy, and accurate inspections are performable.
    • 在具有至少三个电子 - 光学系统的本发明的图案检查装置中,将从相同电路图形大致同时获得的检测信号彼此进行比较。 此外,通过与安装有多个电子枪的电子枪室独立于样品室排出,可以将多个电子源周围的区域保持在高真空度。 此外,通过屏蔽电极将电场和磁场限制在每个电子 - 光学系统中,该屏蔽电极使得可以将电子束路径排出到高真空度,同时二次电子和反射电子被检测到 相同的电子 - 光学系统通过将样品设置为负电压并且在电子束轴的方向上将二次电子和反射电子加速朝向电子源侧。 因此,图案检查中的缺陷确定可以基本上同时执行,并且同时,检查的吞吐量可以与电子 - 光学系统的数量成比例地改善。 此外,三个或更多个电子源可以以高真空状态稳定地操作,并且来自紧密排列的电子 - 光学系统的信号可以高精度地检测,并且可以进行准确的检查。