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    • 104. 发明授权
    • Wireless communication having operation time correcting function
    • 具有操作时间校正功能的无线通信
    • US06628628B1
    • 2003-09-30
    • US09516154
    • 2000-03-01
    • Toru Yamazaki
    • Toru Yamazaki
    • H04B7216
    • H04W56/006H04B7/2662H04W92/02
    • An integrated communication system includes a CDMA network and other network such as a private cordless phone network which operates under a communication protocol different from that of the CDMA network. The CDMA network receives a GPS time signal from a GPS satellite and transmits a GPS-synchronization signal in synchronism with the GPS time signal. When a cellular phone receives an output request signal such as a position registration request signal from the other network, it transmits an output signal such as a position registration signal to the other network at a time synchronized with the GPS-synchronization signal. The other communication network responsively corrects a time of synchronization of its operation time based on the received output signal.
    • 集成通信系统包括CDMA网络和诸如私有无绳电话网络的其它网络,其在与CDMA网络的通信协议不同的通信协议下操作。 CDMA网络从GPS卫星接收GPS时间信号,并与GPS时间信号同步发送GPS同步信号。 当蜂窝电话从另一网络接收诸如位置登记请求信号的输出请求信号时,它在与GPS同步信号同步的时间向另一网络发送诸如位置登记信号的输出信号。 另一个通信网络基于接收到的输出信号响应地校正其操作时间的同步时间。
    • 105. 发明授权
    • BiCMOS device having a CMOS gate electrode and a bipolar emitter each containing two impurities of the same conductivity type
    • BiCMOS器件具有CMOS栅电极和双极型发射极,每个都含有相同导电类型的两种杂质
    • US06459129B1
    • 2002-10-01
    • US09041657
    • 1998-03-13
    • Toru Yamazaki
    • Toru Yamazaki
    • H01L2976
    • H01L21/8249H01L27/0623
    • A semiconductor device and a method of producing the same are disclosed. After boron or similar p-type impurity has been introduced into a polysilicon layer constituting a pMOS gate, annealing can be effected at an optimal temperature low enough to prevent the impurity from entering a silicon substrate via a gate oxide film, e.g., 800° C. or below in the case of boron. This prevents the characteristic of a transistor, e.g., threshold voltage from being varied. Further, in an nMOS gate electrode and source-drain region, the n-type impurity can be provided with a concentration reducing the resistance of a silicide layer. In addition, in the emitter diffusion layer of a bipolar transistor, the concentration of the n-type impurity does not fall and allows a current amplification factor to be increased while allowing an emitter resistance to be reduced.
    • 公开了一种半导体器件及其制造方法。 在硼或类似的p型杂质已经被引入到构成pMOS栅极的多晶硅层中之后,退火可以在足够低的最佳温度下进行,以防止杂质通过栅极氧化膜进入硅衬底,例如800℃ 在硼的情况下。 这防止了晶体管的特性,例如阈值电压的变化。 此外,在nMOS栅极和源极 - 漏极区域中,可以提供具有降低硅化物层的电阻的浓度的n型杂质。 此外,在双极晶体管的发射极扩散层中,n型杂质的浓度不下降,并允许电流放大系数增大同时允许发射极电阻降低。
    • 109. 发明授权
    • Cloth piece transfer apparatus with side inverter
    • 带逆变器的布片传送装置
    • US5845759A
    • 1998-12-08
    • US834126
    • 1997-04-14
    • Takashi TakadaToru Yamazaki
    • Takashi TakadaToru Yamazaki
    • A41H43/02B65H5/08B65H15/00D05B33/00B65G47/24
    • A41H43/0264B65H15/00B65H5/08D05B33/00B65H2553/41
    • The cloth piece transfer apparatus with side inverter of the invention is applied to the case of continuous feed of cut cloth pieces into a sewing machine or the like. Pickup 14 pinches holds and lifts the rear portion of the cloth piece N in the process of transfer of the cloth pieces N supplied and supported in horizontal position in uneven sides on a transfer device 4. A rodless cylinder 7 moves the pickup 14 in the transfer direction at a speed faster than the transfer speed of the transfer device 4. The cloth piece N moved by this rodless cylinder 7 is brought into contact with an inverting member 18 disposed beneath the middle position of the moving route of the pickup 14, and the sides of the cloth piece N are inverted. The inverted cloth piece N is dropped and supported on the transfer device 4. It enhances the transfer efficiency and is enable to transfer by inverting the sides without disturbing the interval of the cloth pieces supplied continuously.
    • 具有本发明的侧面逆变器的布片传送装置适用于将切布连续送入缝纫机等的情况。 拾取14个夹持件在传送装置4的不平坦侧的水平位置的布料N的传送过程中保持和提起布料N的后部。无杆筒7在传送中移动拾取器14 方向以比传送装置4的传送速度快的速度。由该无杆气缸7移动的布料N与设置在拾取器14的移动路线的中间位置下方的翻转部件18接触, 布件N的两侧倒置。 倒置布N落下并支撑在转印装置4上。它提高了转印效率,并且能够通过翻转边而不会干扰连续供给的布料的间隔而进行转印。