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101. 发明授权

US5601869A Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same 失效
标题翻译：金属聚氧烷基化前体溶液在辛烷溶剂中及其制备方法
公开(公告)号：US5601869A
公开(公告)日：1997-02-11
申请号：US478399
申请日：1995-06-07
申请人： Michael C. Scott , Carlos A. Paz de Araujo
发明人： Michael C. Scott , Carlos A. Paz de Araujo
IPC分类号： C23C18/12 , C30B7/00 , H01C7/10 , H01C7/112 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , B05D5/12
CPC分类号： C30B7/00 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C30B29/68 , C30B7/005 , H01C7/1013 , H01C7/112 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/55
摘要： A liquid precursor solution for use according to a method of manufacturing metal oxide electronic components includes a polyoxyalkylated metal complex dispersed in an alkane solvent. The alkane solvent is preferably n-octane.
摘要翻译：根据制造金属氧化物电子部件的方法使用的液体前体溶液包括分散在烷烃溶剂中的聚氧化烷基化金属络合物。烷烃溶剂优选为正辛烷。

102. 发明授权

US5523964A Ferroelectric non-volatile memory unit 失效
标题翻译：铁电非易失性存储单元
公开(公告)号：US5523964A
公开(公告)日：1996-06-04
申请号：US224241
申请日：1994-04-07
申请人： Larry D. McMillan , Takashi Mihara , Hiroyuki Yoshimori , John W. Gregory , Carlos A. Paz de Araujo
发明人： Larry D. McMillan , Takashi Mihara , Hiroyuki Yoshimori , John W. Gregory , Carlos A. Paz de Araujo
IPC分类号： G11C14/00 , G11C11/22 , H01L21/8242 , H01L21/8247 , H01L27/10 , H01L27/108 , H01L29/788 , H01L29/792
CPC分类号： G11C11/22 , G11C11/223
摘要： An integrated circuit non-volatile, non-destructive read-out memory unit includes a ferroelectric capacitor having first and second electrodes, a capacitance Cf, and an area Af, and a transistor having a gate, a source and a drain forming a gate capacitor having an area Ag and a gate capacitance Cg, a gate overlap b, and a channel depth a, with the capacitor first electrode connected to the gate of the transistor. The ferroelectric material has a dielectric constant .epsilon.f and the gate insulator has a dielectric constant .epsilon.g. A source of a constant reference voltage is connectable to the first electrode. A bit line connects to the second electrode. In one embodiment the first electrode and gate are the same conductive member. In another embodiment the second electrode and the gate are the same conductive member and the first electrode is formed by extensions of the transistor source and drains underlying the gate, with the ferroelectric material between the source and drain extensions and the gate. The memory unit has the parametric relationships: Cf
摘要翻译：集成电路非易失性非破坏性读出存储单元包括具有第一和第二电极的铁电电容器，电容Cf和区域Af，以及具有形成栅极电容器的栅极，源极和漏极的晶体管具有面积Ag和栅极电容Cg，栅极重叠b和沟道深度a，其中电容器第一电极连接到晶体管的栅极。铁电材料具有介电常数εf，栅极绝缘体具有介电常数εg。恒定参考电压的源可连接到第一电极。位线连接到第二电极。在一个实施例中，第一电极和栅极是相同的导电构件。在另一个实施例中，第二电极和栅极是相同的导电构件，并且第一电极由晶体管源的延伸和栅极下方的漏极形成，铁电材料在源极和漏极延伸部分之间以及栅极之间。存储器单元具有参数关系：Cf <5xCg，Af / = 2a和epsilon g> / = epsilon f / 8。

103. 发明授权

US5508954A Method and apparatus for reduced fatigue in ferroelectric memory 失效
标题翻译：铁电存储器疲劳减少的方法和装置
公开(公告)号：US5508954A
公开(公告)日：1996-04-16
申请号：US395582
申请日：1995-02-27
申请人： Takashi Mihara , Hitoshi Watanabe , Hiroyuki Yoshimori , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Takashi Mihara , Hitoshi Watanabe , Hiroyuki Yoshimori , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： G11C14/00 , G11C11/22 , G11C16/04 , H01L21/8247 , H01L27/10 , H01L29/788 , H01L29/792 , G11C11/12
CPC分类号： G11C11/22 , G11C11/223 , G11C11/2293
摘要： A method and apparatus for programming ferroelectric memory cells which reduces polarizability fatigue effects of switching polarization of the ferroelectric devices associated with the memory cells such as ferroelectric capacitors and transistors. Alteration of the pulse width duty cycle associated with signals used to switch ferroelectric device polarization is shown to reduce polarizability fatigue of the ferroelectric material thereby increasing the useful life of ferroelectric memory cells. Methods and apparatus for producing a signal pulse duty cycle in the range 2-30% is disclosed and shown to improve the useful life of the ferroelectric material.
摘要翻译：一种用于编程铁电存储器单元的方法和装置，其降低与诸如铁电电容器和晶体管之类的存储单元相关联的铁电体器件的开关极化的极化率疲劳效应。显示与用于切换铁电体器件极化的信号相关联的脉冲宽度占空比的改变，以降低铁电材料的极化率疲劳，从而增加铁电存储器单元的使用寿命。公开并示出了用于产生2-30％范围内的信号脉冲占空比的方法和装置，以改善铁电材料的使用寿命。

104. 发明授权

US5508226A Low temperature process for fabricating layered superlattice materialsand making electronic devices including same 失效
标题翻译：用于制造分层超晶格材料的低温工艺和制造包括其的电子器件
公开(公告)号：US5508226A
公开(公告)日：1996-04-16
申请号：US407760
申请日：1995-03-21
申请人： Takeshi Ito , Carlos A. Paz de Araujo , Hitoshi Watanabe , Michael C. Scott
发明人： Takeshi Ito , Carlos A. Paz de Araujo , Hitoshi Watanabe , Michael C. Scott
IPC分类号： H01L21/28 , C23C18/12 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L27/115 , H01L29/15
CPC分类号： C23C18/1295 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55
摘要： A liquid precursor containing a metal is applied to a first electrode, RTP baked at a temperature of 700.degree. C., and annealed at the same temperature for from 3 to 5 hours to form a layered superlattice material. A second electrode is formed to form a capacitor, and a second anneal is performed at a temperature of 700.degree. C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8.ltoreq.u.ltoreq.1.0, 2.0 v.ltoreq.2.3, and 1.9.ltoreq.w.ltoreq.2.1.
摘要翻译：将包含金属的液体前体施加到第一电极，RTP在700℃的温度下烘烤，并在相同温度下退火3至5小时以形成层状超晶格材料。形成第二电极以形成电容器，并且在700℃的温度下进行第二次退火。如果该材料是钽酸铋锶，则该前体包含铀的锶摩尔当量，铋的摩尔当量铋和 w摩尔当量的钽，其中0.8≤i≤2.0v≤2.3和1.9≤w≤2.1。

105. 发明授权

US07459318B2 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same 有权
标题翻译：用于高密度存储器的具有三维取向的铁电和高介电常数集成电路电容器及其制造方法
公开(公告)号：US07459318B2
公开(公告)日：2008-12-02
申请号：US11411767
申请日：2006-04-26
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Vikram Joshi
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Vikram Joshi
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , C30B29/32 , C30B29/68 , G11C11/22 , H01L21/7687 , H01L23/642 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional (“3-D”) memory capacitor comprises a bottom electrode, a ferroelectric thin film, and a top electrode that conform to a 3-D surface of an insulator layer. The capacitance area is greater than the horizontal footprint area of the capacitor. Preferably, the footprint of the capacitor is less than 0.2 nm2, and the corresponding capacitance area is typically in a range of from 0.4 nm2 to 1.0 nm2 The ferroelectric thin film preferably has a thickness not exceeding 60 nm. A capacitor laminate including the bottom electrode, ferroelectric thin film, and the top electrode preferably has a thickness not exceeding 200 nm. A low-thermal-budget MOCVD method for depositing a ferroelectric thin film having a thickness in a range of from 30 nm to 90 nm includes an RTP treatment before depositing the top electrode and an RTP treatment after depositing the top electrode and etching the ferroelectric layer.
摘要翻译：三维（“3-D”）存储电容器包括底电极，铁电薄膜和符合绝缘体层的3-D表面的顶电极。电容面积大于电容器的水平占位面积。优选地，电容器的占地面积小于0.2nm 2，并且相应的电容面积通常在0.4nm 2至1.0nm 2的范围内。铁电薄膜优选具有不超过60nm的厚度。包括底电极，铁电薄膜和顶电极的电容器层压体优选具有不超过200nm的厚度。用于沉积厚度在30nm至90nm范围内的铁电薄膜的低热预算MOCVD方法包括在沉积顶电极之前的RTP处理和在沉积顶电极之后进行RTP处理并蚀刻铁电层。

106. 发明申请

US20080106927A1 STABILIZED RESISTIVE SWITCHING MEMORY 有权
标题翻译：稳定电阻开关存储器
公开(公告)号：US20080106927A1
公开(公告)日：2008-05-08
申请号：US11937480
申请日：2007-11-08
申请人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.
摘要翻译：一种非易失性电阻式开关存储器，其包括在绝缘和导电状态之间变化的材料。该材料通过外部配体如碳稳定，防止由氧空位的电荷捕获。

107. 发明授权

US6110531A Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制备集成电路薄膜的方法和装置
公开(公告)号：US6110531A
公开(公告)日：2000-08-29
申请号：US892485
申请日：1997-07-14
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Jeffrey W. Bacon
IPC分类号： B05D1/00 , B05D1/04 , B05D3/04 , B05D7/24 , C23C4/12 , C23C16/02 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C16/56 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , C30B25/02 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , C23C16/18 , H01L21/31
CPC分类号： C23C16/45565 , B05D1/00 , B05D1/007 , B05D1/04 , B05D1/60 , B05D3/0493 , C23C16/0218 , C23C16/40 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C16/56 , C23C26/02 , C23C4/123 , C30B25/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/02197 , H01L21/02274 , H01L21/02356 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/1871 , H01L41/316 , H01L28/55 , H05K3/105
摘要： A mist is generated by a venturi from liquid precursors containing compounds used in chemical vapor deposition, transported in carrier gas through tubing at ambient temperature, passed into a heated zone where the mist droplets are gasified at a temperature of between 100.degree. C. and 200.degree. C., which is lower than the decomposition temperature of the precursor compounds. The gasified liquid is injected through an inlet assembly into a deposition reactor in which there is a substrate heated to from 400.degree. C. to 600.degree. C., on which the gasified compounds decompose and form a thin film of layered superlattice compound.
摘要翻译：由文氏管产生的气雾包含化学气相沉积中使用的化合物的液体前体，在载气中通过管道在环境温度下运输，并通入加热区，雾化气滴在100℃至200℃的温度下气化 ℃，其低于前体化合物的分解温度。将气化液体通过入口组件注入到沉积反应器中，其中存在加热至400℃至600℃的基底，气化的化合物在其上分解并形成层状超晶格化合物的薄膜。

108. 发明授权

US6037046A Multi-component electromagnetic wave absorption panels 失效
标题翻译：多分量电磁波吸收面板
公开(公告)号：US6037046A
公开(公告)日：2000-03-14
申请号：US782934
申请日：1997-01-13
申请人： Vikram Joshi , Kenichi Kimura , Carlos A. Paz de Araujo , Hiroshi Kiyokawa
发明人： Vikram Joshi , Kenichi Kimura , Carlos A. Paz de Araujo , Hiroshi Kiyokawa
IPC分类号： E04B1/92 , H01Q17/00 , B32B7/00 , H05K9/00
CPC分类号： E04B1/92 , H01Q17/00 , H01Q17/004 , H01Q17/007 , H01Q17/008 , Y10T428/24942 , Y10T428/252 , Y10T428/31507 , Y10T428/31544 , Y10T428/31678
摘要： An electromagnetic wave absorption panel for use in building construction includes a protective tile layer, an absorber layer, a metal reflective layer, and a building support layer, such as concrete. The absorber layer is multi-component structure, such as: a high dielectric constant layer and ferrite layer; a ferrite layer and a low dielectric constant layer; a ferrite and a polymer; a polymer and a material having a higher dielectric constant than the polymer; a ferroelectric, a ferrite, and a polymer; a ferrite, a polymer, and a high dielectric constant material; and a high dielectric constant material, a material in which the imaginary part of the permeability is greater than or equal to the real part of the permeability, and a low dielectric constant material. The invention also includes combinations of the above, such as: a high dielectric constant material, a ferrite, and a low dielectric constant material; and multiple layers of a ferrite and a polymer. The invention further includes the above structures and combinations with specific materials, such as a ferrite, a polymer, LSM, and a high dielectric constant material; and a ferrite, a polymer, and BST. The invention also includes: a multi-component absorber element having an effective real part of the permitivity, .epsilon.'.sub.eff, and an effective real part of the permeability, .mu.'.sub.eff, such that (.epsilon.'.sub.eff .mu.'.sub.eff).sup.1/2 .about.1/f over said range of frequencies, where f is the frequency of the incident wave; and a multi-component absorber element having an effective real part of the permitivity, .epsilon.'.sub.eff, that decreases with frequency.
摘要翻译：用于建筑结构的电磁波吸收面板包括保护砖层，吸收层，金属反射层和建筑物支撑层，例如混凝土。吸收层是多组分结构，如：高介电常数层和铁素体层; 铁素体层和低介电常数层; 铁氧体和聚合物; 聚合物和具有比聚合物更高的介电常数的材料; 铁电体，铁氧体和聚合物; 铁氧体，聚合物和高介电常数材料; 和高介电常数材料，其中导磁率的虚部大于或等于导磁率的实部的材料和低介电常数材料。本发明还包括上述的组合，例如：高介电常数材料，铁素体和低介电常数材料; 和多层铁素体和聚合物。本发明还包括上述结构和与特定材料的组合，例如铁氧体，聚合物，LSM和高介电常数材料; 和铁素体，聚合物和BST。本发明还包括：多组分吸收元件，其具有有效实部的介电常数εεeff和渗透率μeff的有效实部，使得（ε'eff mu eff）+ E，在所述频率范围内，1/2 + EE差分1 / f，其中f是入射波的频率; 以及多分量吸收元件，其具有随频率而减小的有效实部的ε，εeff。

109. 发明授权

US05997642A Method and apparatus for misted deposition of integrated circuit quality thin films 失效
标题翻译：沉积集成电路质量薄膜的方法和装置
公开(公告)号：US05997642A
公开(公告)日：1999-12-07
申请号：US971799
申请日：1997-11-17
申请人： Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B05D1/00 , B05D1/04 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , C23C14/00
CPC分类号： C23C16/45565 , B05D1/007 , B05D1/04 , C23C16/40 , C23C16/448 , C23C16/45561 , C23C18/12 , H01L21/31691 , H01L28/55
摘要： A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is electrically filtered so that it comprises predominately negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area. An exhaust port defines a channel about the periphery of an exhaust plane parallel to and below the substrate plane.
摘要翻译：质量流量控制器控制前体到雾发生器的输送。使用文丘里管雾化前体，其中氧气和氮气的组合由电晕丝充电并且通过前体填充的喉部。雾被电过滤，使得其主要包含负离子，进入减速室，然后通过入口板中的入口板的入口端口流入沉积室，该入口板是室之间的分隔件和接地电极。入口板位于要沉积雾的基底的平面上方并且基本上平行。基板被充电至约5000伏特的电压。在基板正上方的入口板的39平方英寸进口端口区域中每平方英寸有440个入口端口。入口面积大致等于衬底面积。排气口围绕平行于和低于衬底平面的排气平面的周边限定通道。

110. 发明授权

US5853500A Method for fabricating thin films of barium strontium titanate without exposure to oxygen at high temperatures 失效
标题翻译：在高温下不暴露于氧气的钛酸钡锶薄膜的制造方法
公开(公告)号：US5853500A
公开(公告)日：1998-12-29
申请号：US896574
申请日：1997-07-18
申请人： Vikram Joshi , Carlos A. Paz de Araujo
发明人： Vikram Joshi , Carlos A. Paz de Araujo
IPC分类号： C23C18/12 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108 , B05D5/12
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225 , C23C18/1283
摘要： A liquid precursor containing barium, strontium, and titanium, is applied to a first electrode, dried in air at a first temperature of 160.degree. C. and then a second temperature of 400.degree. C., and annealed at a temperature of 800.degree. C. in nitrogen to form a thin film of barium strontium titanate. A second electrode is deposited and then the device is patterned to form a capacitor, and a second anneal is performed at a temperature of 800.degree. C. in nitrogen. In this manner, a high electronic quality thin film of barium strontium titanate is fabricated without a high-temperature oxygen anneal.
摘要翻译：将包含钡，锶和钛的液体前体施加到第一电极上，在160℃的第一温度，然后在第二温度400℃下在空气中干燥，并在800℃的温度下退火在氮气中形成钛酸钡锶薄膜。沉积第二电极，然后将器件图案化以形成电容器，并且在氮气中在800℃的温度下进行第二次退火。以这种方式，在没有高温氧退火的情况下制造钛酸锶钡的高电子质量薄膜。

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