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1. 发明申请

US20080106927A1 STABILIZED RESISTIVE SWITCHING MEMORY 有权
标题翻译：稳定电阻开关存储器
公开(公告)号：US20080106927A1
公开(公告)日：2008-05-08
申请号：US11937480
申请日：2007-11-08
申请人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.
摘要翻译：一种非易失性电阻式开关存储器，其包括在绝缘和导电状态之间变化的材料。该材料通过外部配体如碳稳定，防止由氧空位的电荷捕获。

2. 发明申请

US20080106925A1 CORRELATED ELECTRON MEMORY 有权
标题翻译：相关电子存储器
公开(公告)号：US20080106925A1
公开(公告)日：2008-05-08
申请号：US11937461
申请日：2007-11-08
申请人： Carlos A. Paz de Araujo , Jolanta Celinska , Matthew D. Brubaker
发明人： Carlos A. Paz de Araujo , Jolanta Celinska , Matthew D. Brubaker
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a homogeneous material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.
摘要翻译：一种非易失性电阻式开关存储器，其包括由于电子之间的相关性而导致的绝缘和导电状态之间的均匀材料，特别是通过Mott跃迁。该材料结晶成导电状态，不需要电铸。

3. 发明授权

US07639523B2 Stabilized resistive switching memory 有权
标题翻译：稳定电阻式开关存储器
公开(公告)号：US07639523B2
公开(公告)日：2009-12-29
申请号：US11937480
申请日：2007-11-08
申请人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
IPC分类号： G11C11/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.
摘要翻译：一种非易失性电阻式开关存储器，其包括在绝缘和导电状态之间变化的材料。该材料通过外部配体如碳稳定，防止由氧空位的电荷捕获。

4. 发明申请

US20080107801A1 METHOD OF MAKING A VARIABLE RESISTANCE MEMORY 审中-公开
标题翻译：制造可变电阻记忆体的方法
公开(公告)号：US20080107801A1
公开(公告)日：2008-05-08
申请号：US11937481
申请日：2007-11-08
申请人： Jolanta Celinska , Carlos A. Paz de Araujo , Matthew D. Brubaker
发明人： Jolanta Celinska , Carlos A. Paz de Araujo , Matthew D. Brubaker
IPC分类号： B05D5/12
CPC分类号： H01L45/04 , G11C13/0002 , G11C2213/79 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A method of making a variable resistance material (VRM), the method comprising providing a precursor comprising a metallorganic or organometallic solvent containing a metal moiety suitable for forming the VRM, depositing the precursor on a substrate to form a thin film of the precursor, and heating the thin film to form the VRM. The preferred solvent comprises octane.
摘要翻译：一种制备可变电阻材料（VRM）的方法，所述方法包括提供包含含有适于形成VRM的金属部分的金属有机或有机金属溶剂的前体，将前体沉积在基底上以形成前体的薄膜，以及加热薄膜以形成VRM。优选的溶剂包括辛烷。

5. 发明申请

US20080106926A1 NON-VOLATILE RESISTANCE SWITCHING MEMORIES AND METHODS OF MAKING SAME 有权
标题翻译：非易失性电阻开关存储器及其制造方法
公开(公告)号：US20080106926A1
公开(公告)日：2008-05-08
申请号：US11937479
申请日：2007-11-08
申请人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
发明人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/24 , G11C13/0007 , G11C2213/32 , G11C2213/53 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L29/685 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
摘要翻译：一种集成电路存储单元，包括：具有第一有源区，第二有源区和在有源区之间的沟道的半导体; 以及在通道正上方的可变电阻材料层（VRM）。在一个实施例中，在VRM和沟道之间存在第一导电层，以及VRM层正上方的第二导电层。 VRM优选为相关电子材料（CEM）。存储单元包括FET，例如JFET或MESFET。在另一个实施例中，在VRM和通道之间存在绝缘材料层。在这种情况下，存储单元可以包括MOSFET结构。

6. 发明授权

US07872900B2 Correlated electron memory 有权
标题翻译：相关电子记忆
公开(公告)号：US07872900B2
公开(公告)日：2011-01-18
申请号：US11937461
申请日：2007-11-08
申请人： Carlos A. Paz de Araujo , Jolanta Celinska , Matthew D. Brubaker
发明人： Carlos A. Paz de Araujo , Jolanta Celinska , Matthew D. Brubaker
IPC分类号： G11C11/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a homogeneous material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.
摘要翻译：一种非易失性电阻式开关存储器，其包括由于电子之间的相关性而导致的绝缘和导电状态之间的均匀材料，特别是通过Mott跃迁。该材料结晶成导电状态，不需要电铸。

7. 发明申请

US20100283028A1 NON-VOLATILE RESISTANCE SWITCHING MEMORIES AND METHODS OF MAKING SAME 审中-公开
标题翻译：非易失性电阻开关存储器及其制造方法
公开(公告)号：US20100283028A1
公开(公告)日：2010-11-11
申请号：US12840870
申请日：2010-07-21
申请人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
发明人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/24 , G11C13/0007 , G11C2213/32 , G11C2213/53 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L29/685 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
摘要翻译：一种集成电路存储单元，包括：具有第一有源区，第二有源区和在有源区之间的沟道的半导体; 以及在通道正上方的可变电阻材料层（VRM）。在一个实施例中，在VRM和沟道之间存在第一导电层，以及VRM层正上方的第二导电层。 VRM优选为相关电子材料（CEM）。存储单元包括FET，例如JFET或MESFET。在另一个实施例中，在VRM和通道之间存在绝缘材料层。在这种情况下，存储单元可以包括MOSFET结构。

8. 发明授权

US07778063B2 Non-volatile resistance switching memories and methods of making same 有权
标题翻译：非易失性电阻转换存储器及其制作方法
公开(公告)号：US07778063B2
公开(公告)日：2010-08-17
申请号：US11937479
申请日：2007-11-08
申请人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
发明人： Matthew D. Brubaker , Carlos A. Paz de Araujo , Jolanta Celinska
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/24 , G11C13/0007 , G11C2213/32 , G11C2213/53 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L29/685 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
摘要翻译：一种集成电路存储单元，包括：具有第一有源区，第二有源区和在有源区之间的沟道的半导体; 以及在通道正上方的可变电阻材料层（VRM）。在一个实施例中，在VRM和沟道之间存在第一导电层，以及VRM层正上方的第二导电层。 VRM优选为相关电子材料（CEM）。存储单元包括FET，例如JFET或MESFET。在另一个实施例中，在VRM和通道之间存在绝缘材料层。在这种情况下，存储单元可以包括MOSFET结构。

9. 发明申请

US20100090172A1 STABILIZED RESISTIVE SWITCHING MEMORY 审中-公开
标题翻译：稳定电阻开关存储器
公开(公告)号：US20100090172A1
公开(公告)日：2010-04-15
申请号：US12618596
申请日：2009-11-13
申请人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Matthew D. Brubaker , Carlos A. Paz de Araujo
IPC分类号： H01B1/02
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1641
摘要： A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.
摘要翻译：一种非易失性电阻式开关存储器，其包括在绝缘和导电状态之间变化的材料。该材料通过外部配体如碳稳定，防止由氧空位的电荷捕获。

10. 发明授权

US09460921B2 Nanowire article and processes for making and using same 有权
标题翻译：纳米线的制作和使用过程
公开(公告)号：US09460921B2
公开(公告)日：2016-10-04
申请号：US14679249
申请日：2015-04-06
申请人： NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY , Matthew D. Brubaker , William M. Old
发明人： Kristine A. Bertness , Matthew D. Brubaker , William M. Old
IPC分类号： B82Y35/00 , B82Y40/00 , H01L21/18 , C30B29/40 , H01L21/02
CPC分类号： H01L21/02603 , B82Y10/00 , B82Y35/00 , B82Y40/00 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02642 , H01L29/0665
摘要： A nanowire article includes a substrate; a plurality of nanowires disposed on the substrate, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table; and a superlattice layer interposed between the substrate and the plurality of gallium nitride nanowires. A process for producing a nanowire article includes disposing a superlattice layer on a substrate; disposing a first buffer layer on the superlattice layer; contacting the first buffer layer with a precursor; and forming a plurality of nanowires from the precursor on the first buffer layer to form the nanowire article, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table. A process for producing a nanowire article includes nitrogenating a substrate to form a nitrogenated layer on the substrate; contacting the nitrogenated layer with a precursor; and forming a plurality of gallium nitride nanowires from the precursor on the nitrogenated layer to form the nanowire article in an absence of a catalyst, wherein individual gallium nitride nanowires of the plurality of gallium nitride nanowires include a length axis that is substantially perpendicular to the nitrogenated layer.
摘要翻译：纳米线制品包括基材; 设置在所述衬底上的多个纳米线，所述纳米线包括半导体氮化物，所述半导体包括选自周期表第3组的元素; 以及插入在所述基板和所述多个氮化镓纳米线之间的超晶格层。制造纳米线制品的方法包括在基材上设置超晶格层; 在超晶格层上设置第一缓冲层; 使第一缓冲层与前体接触; 以及从所述第一缓冲层上的所述前体形成多个纳米线以形成所述纳米线制品，所述纳米线包含半导体氮化物，所述半导体包含选自周期表第3族的元素。一种纳米线制品的制造方法，包括使基材氮化以在基材上形成氮化层; 使氮化层与前体接触; 以及在不存在催化剂的情况下从所述氮化层上的所述前体形成多个氮化镓纳米线，以在不存在催化剂的情况下形成所述纳米线制品，其中所述多个氮化镓纳米线中的各个氮化镓纳米线包括基本上垂直于所述氮化物层。

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