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101. 发明授权

US07778073B2 Integrated circuit having NAND memory cell strings 有权
标题翻译：具有NAND存储单元串的集成电路
公开(公告)号：US07778073B2
公开(公告)日：2010-08-17
申请号：US11872655
申请日：2007-10-15
申请人： Josef Willer , Franz Hofmann , Detlev Richter , Nicolas Nagel
发明人： Josef Willer , Franz Hofmann , Detlev Richter , Nicolas Nagel
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , G11C16/0475 , H01L27/115 , H01L27/11565 , H01L27/11568
摘要： Embodiments of the present invention relate generally to integrated circuits and methods for manufacturing an integrated circuit. In an embodiment of the invention, an integrated circuit having a memory cell is provided. The memory cell may include a trench in a carrier, a charge trapping layer structure in the trench, the charge trapping layer structure comprising at least two separate charge trapping regions, electrically conductive material at least partially filled in the trench, and source/drain regions next to the trench.
摘要翻译：本发明的实施例一般涉及用于制造集成电路的集成电路和方法。在本发明的实施例中，提供了具有存储单元的集成电路。存储单元可以包括载体中的沟槽，沟槽中的电荷俘获层结构，电荷俘获层结构包括至少两个分离的电荷俘获区，至少部分填充在沟槽中的导电材料以及源/漏区旁边的沟槽。

102. 发明授权

US07741630B2 Resistive memory element and method of fabrication 失效
标题翻译：电阻记忆元件及其制造方法
公开(公告)号：US07741630B2
公开(公告)日：2010-06-22
申请号：US12028513
申请日：2008-02-08
申请人： Klaus-Dieter Ufert , Josef Willer
发明人： Klaus-Dieter Ufert , Josef Willer
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L27/222 , H01L27/2436 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L45/149 , H01L45/1625 , H01L45/1675
摘要： An integrated circuit including a memory cell and a method of manufacturing the integrated circuit are described. The memory cell includes a buried gate select transistor and a resistive memory element coupled to the buried gate select transistor. The resistive memory element stores information based on a resistivity of the resistive memory element.
摘要翻译：描述了包括存储单元的集成电路和集成电路的制造方法。存储单元包括掩埋栅极选择晶体管和耦合到掩埋栅选择晶体管的电阻存储元件。电阻性存储元件基于电阻式存储元件的电阻率存储信息。

103. 发明申请

US20090029512A1 SEMICONDUCTOR MEMORY HAVING CHARGE TRAPPING MEMORY CELLS AND FABRICATION METHOD THEREOF 失效
标题翻译：具有电荷捕获记忆体的半导体存储器及其制造方法
公开(公告)号：US20090029512A1
公开(公告)日：2009-01-29
申请号：US12110849
申请日：2008-04-28
申请人： Josef Willer , Thomas Mikolajick , Christoph Ludwig , Norbert Schulze , Karl Heinz Kuesters
发明人： Josef Willer , Thomas Mikolajick , Christoph Ludwig , Norbert Schulze , Karl Heinz Kuesters
IPC分类号： H01L21/8247 , H01L21/336
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/42336 , H01L29/7923
摘要： A semiconductor memory having charge trapping memory cells and fabrication method thereof. The direction of current flow of each channel region of the memory transistors runs transversely with respect to the relevant word line, the bit lines are arranged on the top side of the word lines and in a manner electrically insulated from the latter, and electrically conductive local interconnects of source-drain regions are present, which are arranged in sections in interspaces between the word lines and in a manner electrically insulated from the latter and connected to the bit lines, wherein gate electrodes are arranged in trenches at least partly formed in the memory substrate.
摘要翻译：一种具有电荷捕获存储单元的半导体存储器及其制造方法。存储晶体管的每个通道区域的电流流动方向相对于相关字线横向延伸，位线布置在字线的顶侧，并以与之相隔离的方式布置，并且导电的局部存在源极 - 漏极区域的互连，其在字线之间的间隔中以部分布置并且以与后者的电绝缘并且连接到位线的方式布置，其中栅极电极布置在至少部分地形成在存储器中的沟槽中基质。

104. 发明授权

US07402490B2 Charge-trapping memory device and methods for operating and manufacturing the cell 有权
标题翻译：电荷捕获存储器件以及用于操作和制造电池的方法
公开(公告)号：US07402490B2
公开(公告)日：2008-07-22
申请号：US11253939
申请日：2005-10-19
申请人： Thomas Mikolajick , Hans Reisinger , Josef Willer , Corvin Liaw
发明人： Thomas Mikolajick , Hans Reisinger , Josef Willer , Corvin Liaw
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , G11C16/0466 , G11C16/0491 , H01L21/28282 , H01L27/115 , H01L29/7923
摘要： To manufacture a memory device, a gate dielectric layer is formed over a semiconductor body and a gate electrode layer is formed over the gate dielectric layer. The gate electrode layer is structured to form a gate electrode with sidewalls. An etching process is performed to remove parts of the gate dielectric layer from beneath the gate electrode on opposite sides of the gate electrode. Boundary layers, e.g., oxide layers, are formed on an upper surface of the semiconductor body and a lower surface of the gate electrode adjacent where the gate dielectric has been removed thereby leaving spaces. Charge-trapping layer material can then be deposited to fill the spaces. Source and drain regions are then formed in the semiconductor body adjacent the gate electrode.
摘要翻译：为了制造存储器件，在半导体本体上形成栅极电介质层，并且在栅极介电层上形成栅极电极层。栅电极层被构造成形成具有侧壁的栅电极。执行蚀刻处理以从栅极电极的相对侧上的栅电极下方去除栅极电介质层的部分。边界层，例如氧化物层，形成在半导体本体的上表面上，栅电极的下表面邻近已经去除了栅极电介质，从而留下空间。然后可以沉积电荷捕获层材料以填充空间。然后在与栅电极相邻的半导体本体中形成源区和漏区。

105. 发明申请

US20080099834A1 Transistor, an inverter and a method of manufacturing the same 审中-公开
标题翻译：晶体管，逆变器及其制造方法
公开(公告)号：US20080099834A1
公开(公告)日：2008-05-01
申请号：US11589303
申请日：2006-10-30
申请人： Josef Willer
发明人： Josef Willer
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L29/7851 , H01L21/823431 , H01L27/0886 , H01L29/66795 , H01L29/7854 , H01L2924/0002 , H01L2924/00
摘要： An inverter which is at least partially formed in a semiconductor substrate includes a first transistor with a first channel and a second transistor with a second channel, wherein each of the first and second transistors is formed as a FinFET with ridge shaped channels. The first and second gate electrodes of the first and second transistors are adjacent to the first and second channels on at least three sides of the corresponding channel. The first gate electrode extends from a top surface of the first channel ridge to a first ridge depth along the first channel, and the second gate electrode extends from a top surface of the second channel ridge to a second ridge depth along the second channel, wherein the first ridge depth is greater than the second ridge depth.
摘要翻译：至少部分地形成在半导体衬底中的反相器包括具有第一通道的第一晶体管和具有第二通道的第二晶体管，其中第一和第二晶体管中的每一个形成为具有脊形沟道的FinFET。第一和第二晶体管的第一和第二栅电极在相应通道的至少三侧上与第一和第二通道相邻。第一栅电极从第一通道脊的顶表面沿第一通道延伸到第一脊深度，并且第二栅极从第二通道脊的顶表面延伸到沿第二通道的第二脊深度，其中第一脊深度大于第二脊深度。

106. 发明授权

US07365382B2 Semiconductor memory having charge trapping memory cells and fabrication method thereof 有权
标题翻译：具有电荷捕获存储单元的半导体存储器及其制造方法
公开(公告)号：US07365382B2
公开(公告)日：2008-04-29
申请号：US11067983
申请日：2005-02-28
申请人： Josef Willer , Thomas Mikolajick , Christoph Ludwig , Norbert Schulze , Karl-Heinz Kuesters
发明人： Josef Willer , Thomas Mikolajick , Christoph Ludwig , Norbert Schulze , Karl-Heinz Kuesters
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/42336 , H01L29/7923
摘要： A semiconductor memory having charge trapping memory cells, where the direction of current flow of each channel region of the memory transistors runs transversely with respect to the relevant word line, the bit lines are arranged on the top side of the word lines and in a manner electrically insulated from the latter, and electrically conductive local interconnects of source-drain regions are present, which are arranged in sections in interspaces between the word lines and in a manner electrically insulated from the latter and connected to the bit lines, wherein gate electrodes are arranged in trenches at least partly formed in the memory substrate.
摘要翻译：一种具有电荷捕获存储单元的半导体存储器，其中存储晶体管的每个沟道区域的电流方向相对于相关字线横向延伸，位线被布置在字线的顶侧，并且以某种方式存在与源极 - 漏极区电气绝缘的导电局部互连件，其在字线之间的间隔中以部分布置并以与后者的电绝缘方式并且连接到位线的方式布置，其中栅极电极布置在至少部分地形成在存储器基板中的沟槽中。

107. 发明申请

US20080029803A1 Programmable non-volatile memory cell 审中-公开
标题翻译：可编程非易失性存储单元
公开(公告)号：US20080029803A1
公开(公告)日：2008-02-07
申请号：US11497528
申请日：2006-08-02
申请人： Klaus Dieter Ufert , Josef Willer , David Abookasis
发明人： Klaus Dieter Ufert , Josef Willer , David Abookasis
IPC分类号： H01L29/788
CPC分类号： H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1226
摘要： The present invention relates to a reprogrammable non-volatile memory cell which comprises a selection transistor and a data storage element. The invention further relates to a method of fabricating such a memory cell, as well as to a memory cell array comprising a number of such memory cells.
摘要翻译：本发明涉及一种可编程非易失性存储单元，其包括选择晶体管和数据存储元件。本发明还涉及一种制造这种存储单元的方法，以及包括许多这种存储单元的存储单元阵列。

108. 发明申请

US20070257293A1 Semiconductor memory device and method for production of the semiconductor memory device 审中-公开
标题翻译：半导体存储器件及半导体存储器件的制造方法
公开(公告)号：US20070257293A1
公开(公告)日：2007-11-08
申请号：US11429929
申请日：2006-05-08
申请人： Josef Willer
发明人： Josef Willer
IPC分类号： H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L29/42352 , H01L27/115 , H01L27/11568 , H01L29/40117
摘要： The semiconductor memory device has a substrate with a main surface, on which parallel trenches are arranged. A memory layer is disposed at the sidewalls of the trenches, and gate electrodes are disposed in the trenches. Buried bitlines are formed as doped regions between neighboring trenches. The buried bitlines abut the sidewalls of the trenches and comprise upper surfaces, which are arranged at a specified distance from the bottom of the trenches. Source/drain regions are formed by sections of the buried bitlines.
摘要翻译：半导体存储器件具有主表面的衬底，平行的沟槽布置在其上。存储层设置在沟槽的侧壁处，栅电极设置在沟槽中。埋置的位线形成为相邻沟槽之间的掺杂区域。埋置的位线邻接沟槽的侧壁并且包括上表面，其布置在距离沟槽的底部指定的距离处。源极/漏极区域由掩埋位线的部分形成。

109. 发明授权

US07280392B2 Integrated memory device and method for operating the same 有权
标题翻译：集成存储器件及其操作方法
公开(公告)号：US07280392B2
公开(公告)日：2007-10-09
申请号：US11339846
申请日：2006-01-26
申请人： Corvin Liaw , Josef Willer
发明人： Corvin Liaw , Josef Willer
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C13/0069 , G11C2013/0076 , G11C2213/77 , H01L27/101
摘要： A memory device includes an array of memory cells that include a memory element having a non-reactive resistance whose magnitude is programmable to assume a high-resistance state or a low-resistance state. Sets of first and second lines provide access to the memory cells, wherein the memory element of each memory cell is coupled between one of the first lines and one of the second lines. A checking unit determines whether to invert data values to be stored in memory cells coupled to at least a section of respective ones of the first lines based on a number of memory cells that would be programmed in the high-resistance state or the low-resistance state as a result of the data values in order to reduce the number memory cells programmed in the low-resistance state and the resulting leakage current.
摘要翻译：存储器件包括存储器单元阵列，其包括具有非反应电阻的存储元件，其大小可编程为呈现高电阻状态或低电阻状态。第一和第二行的集合提供对存储器单元的访问，其中每个存储器单元的存储元件耦合在第一行之一和第二行中的一个之间。检查单元基于将以高电阻状态编程的存储器单元的数量或低电阻来确定是否反转要存储在耦合到第一行中的相应的第一行的至少一部分的存储器单元中的数据值作为数据值的结果，为了减少在低电阻状态下编程的存储单元数量和所产生的漏电流。

110. 发明授权

US07250651B2 Semiconductor memory device comprising memory cells with floating gate electrode and method of production 有权
标题翻译：半导体存储器件包括具有浮栅电极的存储单元和制造方法
公开(公告)号：US07250651B2
公开(公告)日：2007-07-31
申请号：US10921766
申请日：2004-08-19
申请人： Karl-Heinz Küsters , Josef Willer , Corvin Liaw
发明人： Karl-Heinz Küsters , Josef Willer , Corvin Liaw
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119 , H01L31/062
CPC分类号： H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/51 , H01L29/66825 , H01L29/792
摘要： Transistor bodies of semiconductor material located at a main surface of a semiconductor substrate between shallow trench isolations are provided with a rounded or curved upper surface. A floating gate electrode is arranged above said upper surface and electrically insulated from the semiconductor material by a tunnel dielectric having essentially the same tiny thickness throughout a primary tunnel area encompassing the area of curvature. The floating gate electrode may bridge the transistor body and is covered with a coupling dielectric provided for a control gate electrode, which forms part of a wordline.
摘要翻译：位于浅沟槽隔离物之间的半导体衬底的主表面处的半导体材料的晶体管本体具有圆形或弯曲的上表面。浮栅电极布置在所述上表面之上并且通过隧道电介质与半导体材料电绝缘，所述隧道电介质具有贯穿所述曲率区域的主隧道区域具有基本上相同的微小厚度。浮栅电极可以桥接晶体管本体，并被形成为形成字线一部分的控制栅电极的耦合电介质覆盖。

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