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101. 发明授权

US06184150B2 Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography 失效
标题翻译：氧化物蚀刻工艺，对氮化物具有高选择性，适用于不均匀地形的表面
公开(公告)号：US06184150B2
公开(公告)日：2001-02-06
申请号：US08960104
申请日：1997-10-27
申请人： Chan-Lon Yang , Mei Chang , Paul Arleo , Haojiang Li , Hyman Levinstein
发明人： Chan-Lon Yang , Mei Chang , Paul Arleo , Haojiang Li , Hyman Levinstein
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , H01J37/321 , H01J2237/3346 , H01J2237/3347 , H01L21/31116 , H01L21/31612 , H01L21/3185
摘要： A plasma etch process is described for the etching of oxide with a high selectivity to nitride, including nitride formed on uneven surfaces of a substrate, e.g., on sidewalls of steps on an integrated circuit structure. The addition of a hydrogen-bearing gas to C4F8 or C2F6 etch gases and a scavenger for fluorine, in a plasma etch process for etching oxide in preference to nitride, results in a high selectivity to nitride which is preserved regardless of the topography of the nitride portions of the substrate surface.
摘要翻译：描述了用于蚀刻具有对氮化物的高选择性的氧化物的等离子体蚀刻工艺，包括在衬底的不平坦表面上形成的氮化物，例如在集成电路结构上的台阶侧壁上。在氮化物优先蚀刻氧化物的等离子体蚀刻工艺中，向C4F8或C2F6蚀刻气体和氟清除剂中添加含氢气体导致氮化物的高选择性，而与氮化物的形貌无关基板表面的部分。

102. 发明授权

US6155198A Apparatus for constructing an oxidized film on a semiconductor wafer 失效
标题翻译：用于在半导体晶片上构造氧化膜的装置
公开(公告)号：US6155198A
公开(公告)日：2000-12-05
申请号：US677185
申请日：1996-07-09
申请人： Michael Danek , Marvin Liao , Eric Englhardt , Mei Chang , Yeh-Jen Kao , Dale DuBois , Alan F. Morrison
发明人： Michael Danek , Marvin Liao , Eric Englhardt , Mei Chang , Yeh-Jen Kao , Dale DuBois , Alan F. Morrison
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C23C16/509 , C23C16/56 , H01J37/32 , H01L21/285 , H01L21/768 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/34 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01L21/28512 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01J2237/2001 , H01J2237/336
摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is formed on the wafer, while the wafer is in the processing chamber. Next, the layer of material is oxidized, while the wafer is in the processing chamber. A semiconductor wafer processing chamber for carrying out such a construction in-situ may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.
摘要翻译：放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。当晶片处于处理室时，在晶片上形成一层材料。接下来，当晶片处于处理室时，材料层被氧化。用于原位实施这种结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和rf信号装置。淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。

103. 发明授权

US6106625A Reactor useful for chemical vapor deposition of titanium nitride 失效
标题翻译：用于化学气相沉积氮化钛的反应器
公开(公告)号：US6106625A
公开(公告)日：2000-08-22
申请号：US023852
申请日：1998-02-13
申请人： Keith Koai , Mark Johnson , Mei Chang , Lawrence Chung Lei
发明人： Keith Koai , Mark Johnson , Mei Chang , Lawrence Chung Lei
IPC分类号： C23C16/50 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , C23C16/4585 , C23C16/5096 , H01J37/32477 , H01J37/32522 , H01J37/32834 , H01J2237/0206
摘要： A plasma reaction chamber particularly configured for chemical vapor deposition of titanium nitride with a TDMAT precursor, the deposition including a plasma step. Gas is injected from a gas cavity in a showerhead electrode assembly through a large number of showerhead holes into the processing region over the wafer. The showerhead electrode is capable of being RF energized to create a plasma of a gas in the processing region. The showerhead electrode and other parts of the assembly are cooled by a cooling plate disposed above the gas cavity and connected to a rim of the showerhead electrode. A convolute water-cooling channel is formed in the cooling plate having a small cross section and numerous bends so as to create turbulent flow, thus aiding thermal transfer. The water cooling plate is connected to the showerhead electrode across a large horizontal interface, thus also aiding thermal flow. An edge ring assembly is positioned in a peripheral recess at the top of heater pedestal supporting the wafer next to the processing region. The showerhead is insulated from the chamber body by an isolator having a downwardly sloping lower surface facing the processing region. Thereby, the isolator by itself or in combination with a plasma confinement ring around the wafer confines the plasma to the process area and induces the exhaust to flow downwardly from the processing region. The assembly includes a Z-shaped heat shield disposed between the walls of the recess and of the pedestal side and other parts of the ring assembly with gaps between the various members, thereby promoting thermal isolation in the edge region as well as protecting the side of the pedestal.
摘要翻译：一种等离子体反应室，特别配置用于化学气相沉积氮化钛与TDMAT前体，沉积包括等离子体步骤。气体通过大量喷头孔从喷头电极组件中的气腔注入到晶片上的处理区域中。喷头电极能够被RF激励以在处理区域中产生气体的等离子体。淋浴头电极和组件的其它部分由设置在气腔上方并连接到喷头电极的边缘的冷却板冷却。在具有小横截面和多次弯曲的冷却板中形成卷积水冷却通道，以产生湍流，从而有助于热转印。水冷却板通过大的水平界面连接到喷头电极，从而也有助于热流。边缘环组件位于加热器支架的顶部的周边凹部中，该加热器底座支撑处理区域旁边的晶片。淋浴头通过隔离器与腔体绝缘，隔离器具有面向加工区域的向下倾斜的下表面。因此，隔离器本身或与晶片周围的等离子体约束环组合限制了等离子体到处理区域并且引起排气从处理区域向下流动。组件包括设置在凹部的壁之间的基座侧的Z形隔热罩和环形组件的其它部件之间的间隙，从而促进边缘区域中的热隔离以及保护边缘区域的侧面基座。

104. 发明授权

US6099649A Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal 失效
标题翻译：用于未反应的前体转化和流出物去除的化学气相沉积热阱
公开(公告)号：US6099649A
公开(公告)日：2000-08-08
申请号：US996735
申请日：1997-12-23
申请人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
发明人： John Vincent Schmitt , Ling Chen , George Michael Bleyle , Yu Cong , Alfred Mak , Mei Chang
IPC分类号： B01D8/00 , B01D53/00 , B01D53/72 , C23C16/44 , C30B25/14 , H01J37/32 , C23C16/00
CPC分类号： C23C16/45561 , B01D53/002 , B01D53/72 , C23C16/4412 , C30B25/14 , H01J37/32834
摘要： A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.
摘要翻译：热阱从CVD工艺的排气流转换未反应的有机金属膜前体。转化的前体在热阱的表面上形成金属膜，从而保护热真空泵表面免受金属积聚。热阱下游的冷阱将废气排出的废水冻结。由热阱捕获的金属和由冷阱捕获的流出物可以被再循环，而不是作为环境排放而被释放。

105. 发明授权

US6063441A Processing chamber and method for confining plasma 失效
标题翻译：处理室和限制等离子体的方法
公开(公告)号：US6063441A
公开(公告)日：2000-05-16
申请号：US982727
申请日：1997-12-02
申请人： Keith Koai , Lawrence Chung-Lai Lei , Mei Chang , Mark S. Johnson
发明人： Keith Koai , Lawrence Chung-Lai Lei , Mei Chang , Mark S. Johnson
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , C23C16/4585 , C23C16/5096 , H01J37/32477 , H01J37/32522 , H01J37/32834 , H01J2237/0206
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. The processing chamber includes a chamber lid assembly having an isolator ring member that has a sloping surface for confirming the plasma within a processing zone of the processing chamber while the wafer is being processed therein. A method for forming a CVD layer on a wafer comprising elevating the pedestal until an upper pedestal surface of the pedestal extends above a lower edge of the isolator ring member.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。放置在基座上的优选地也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。处理室包括具有隔离器环构件的腔室盖组件，该隔离器环构件具有倾斜表面，用于在晶片处理期间确认处理室的处理区域内的等离子体。一种用于在晶片上形成CVD层的方法，包括升高基座，直到基座的上基座表面延伸到隔离器环构件的下边缘的上方。

106. 发明授权

US6027606A Center gas feed apparatus for a high density plasma reactor 失效
标题翻译：用于高密度等离子体反应器的中心供气装置
公开(公告)号：US6027606A
公开(公告)日：2000-02-22
申请号：US108950
申请日：1998-06-30
申请人： John Mohn , Mei Chang , Raymond Hung , Kenneth Collins , Ru-Liang Julian Lee
发明人： John Mohn , Mei Chang , Raymond Hung , Kenneth Collins , Ru-Liang Julian Lee
IPC分类号： H05H1/42 , C23F4/00 , H01J37/32 , H01L21/02 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32449 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/32467 , Y10S156/914
摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.
摘要翻译：本发明通过用于加工工件的等离子体反应器来实现，该等离子体反应器包括限定处理室的反应器壳体，半导体天花板窗，用于在其处理期间支撑工件的室内的基座，半导体天花板包括用于进入的气体入口系统通过天花板进入腔室的等离子体前体气体，以及用于将等离子体源功率耦合到腔室中的装置。

107. 发明授权

US5989999A Construction of a tantalum nitride film on a semiconductor wafer 失效
标题翻译：在半导体晶片上构造氮化钽膜
公开(公告)号：US5989999A
公开(公告)日：1999-11-23
申请号：US939914
申请日：1997-09-26
申请人： Timothy E. Levine , Ling Chen , Mei Chang , Roderick C. Mosely , Karl A. Littau , Ivo Raaijmakers
发明人： Timothy E. Levine , Ling Chen , Mei Chang , Roderick C. Mosely , Karl A. Littau , Ivo Raaijmakers
IPC分类号： C23C16/34 , C23C16/458 , C23C16/48 , C23C16/509 , C23C16/56 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76864 , C23C16/34 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01L21/76843 , H01L21/76856 , H01L21/76862
摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer (film) of tantalum nitride material is deposited on the wafer. Next, the layer of tantalum nitride material is annealed. The deposition and annealing may both be accomplished in the same chamber, without need for removing the wafer from the chamber until both steps are completed.
摘要翻译：放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。在晶片上沉积氮化钽材料层（膜）。接下来，对氮化钽层进行退火。沉积和退火都可以在相同的室中完成，而不需要从腔室中移除晶片，直到完成两个步骤。

108. 发明授权

US5855687A Substrate support shield in wafer processing reactors 失效
标题翻译：晶圆处理反应器中的基板支撑屏蔽
公开(公告)号：US5855687A
公开(公告)日：1999-01-05
申请号：US326506
申请日：1994-10-20
申请人： Dale R. DuBois , Alan F. Morrison , Richard A. Marsh , Mei Chang
发明人： Dale R. DuBois , Alan F. Morrison , Richard A. Marsh , Mei Chang
IPC分类号： C23C16/44 , C23C16/04 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/285 , H01L21/683 , H01L21/687 , C23C16/00 , C23C14/00 , C23F1/00 , H01L21/00
CPC分类号： C23C16/45521 , C23C16/04 , C23C16/042 , C23C16/4585 , H01L21/68735
摘要： Apparatus for CVD processing wherein a wafer mounted on a vertically movable susceptor beneath a showerhead. The susceptor extends beyond the outer perimeter of the wafer such that, when the susceptor is raised into contact with a shield ring which normally rests on a ring support in the chamber, the shield ring engages outer portion of the susceptor beyond the perimeter of the wafer, lifting the shield ring off its support. The shield ring shields the edge of the top surface of the susceptor during the deposition, whereby unwanted deposition on the susceptor is prevented while, at the same time, allowing for deposition over the entire upper surface of the wafer. To center the shield ring and the susceptor with respect to each other, the shield ring may include a plurality of centering protrusions, at least some of which engage the susceptor as it moves upwards to lift the shield ring off its supports in the chamber.
摘要翻译：用于CVD处理的装置，其中安装在淋浴喷头下方的垂直移动的基座上的晶片。感受体延伸超过晶片的外周边，使得当基座升高成与通常位于室中的环支撑件上的屏蔽环接触时，屏蔽环接合基座的外部部分超过晶片的周边将护盾环从支架上取下。屏蔽环在沉积期间屏蔽基座的顶表面的边缘，由此防止基座上的不希望的沉积，同时允许沉积在晶片的整个上表面上。为了将屏蔽环和基座相对于彼此定位，屏蔽环可以包括多个定心突起，当其向上移动以将屏蔽环从腔室中的支撑件提升时，至少一些定心突起接合基座。

109. 发明授权

US5510297A Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor 失效
标题翻译：通过在清洁基座之后用硅化钨表面处理其上具有氮化铝表面的基座来均匀沉积半导体晶片上的硅化钨的工艺
公开(公告)号：US5510297A
公开(公告)日：1996-04-23
申请号：US504294
申请日：1995-08-10
申请人： Susan Telford , Michio Aruga , Mei Chang
发明人： Susan Telford , Michio Aruga , Mei Chang
IPC分类号： H01L21/205 , C23C16/42 , H01L21/283
CPC分类号： C23C16/42 , C23C16/4404 , C23C16/4405 , H01L21/28518 , H01L21/28556 , Y10S148/006 , Y10S148/147 , Y10S438/906
摘要： Disclosed is a process for the formation of a tungsten silicide layer on an integrated circuit structure of a semiconductor wafer mounted on a susceptor in a vacuum chamber, wherein the tungsten silicide layer is applied at a temperature of at least 500.degree. C. and the susceptor has an aluminum nitride surface. After the chamber has been cleaned with one or more fluorine-containing etchant gases, the improvement comprises depositing a layer of tungsten silicide on the surface of the susceptor prior to an initial deposition of tungsten silicide on a wafer mounted on the susceptor after cleaning with the fluorine-containing etchant gases.
摘要翻译：公开了一种在安装在真空室中的基座上的半导体晶片的集成电路结构上形成硅化钨层的方法，其中在至少500℃的温度下施加硅化钨层，并且基座具有氮化铝表面。在用一种或多种含氟蚀刻剂气体清洗该腔室之后，改进之处在于，在将硅化钨初始沉积在安装在基座上的晶片上之后，在基板的表面上沉积硅化钨层，含氟蚀刻剂气体。

110. 发明授权

US5482749A Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein 失效
标题翻译：在将硅化钨涂层沉积在其上的基板上之前处理沉积室的含铝表面的预处理过程
公开(公告)号：US5482749A
公开(公告)日：1996-01-09
申请号：US364022
申请日：1994-12-23
申请人： Susan Telford , Michio Aruga , Mei Chang
发明人： Susan Telford , Michio Aruga , Mei Chang
IPC分类号： C23C16/42 , C23C16/44 , B05D3/06 , B05D7/22
CPC分类号： C23C16/42 , C23C16/4404
摘要： A process is disclosed for pretreating aluminum-bearing surfaces in a vacuum deposition chamber after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on substrates in the chamber, which first comprises treating the aluminum-bearing surfaces with a mixture of silane and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the aluminum-bearing surfaces. In a preferred embodiment, the process further comprises subsequently treating the already coated aluminum-bearing surfaces of the chamber in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.3) to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited silane-based tungsten silicide.
摘要翻译：公开了一种用于在先前清洁室的步骤之后以及在室内的基底上沉积硅化钨之前在真空沉积室中预处理铝承载表面的方法，其首先包括用硅烷混合物处理含铝表面和诸如WF6的含钨气体，以在铝承载表面上形成硅烷基硅化钨的第一次沉积。在优选的实施方案中，该方法还包括随后在第二步中用含钨气体（例如WF 6）和氯取代的硅烷如二氯硅烷（SiH 2 Cl 2）的混合物处理已经涂覆的室内铝表面），一氯硅烷（SiH 3 Cl）或三氯硅烷（SiHCl 3），以在先前沉积的硅烷基硅化钨上形成氯取代的硅烷基硅化钨沉积物。

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