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101. 发明授权

US07375023B2 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
标题翻译：半导体衬底的化学机械抛光方法和装置
公开(公告)号：US07375023B2
公开(公告)日：2008-05-20
申请号：US11393999
申请日：2006-03-30
申请人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
发明人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
IPC分类号： H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
摘要翻译：提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。在一个方面，提供了一种处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更大的压板旋转速度下抛光衬底。抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。磨料的百分比。抛光工艺可以集成到多步抛光工艺中。

102. 发明授权

US07331847B2 Vibration damping in chemical mechanical polishing system 失效
标题翻译：化学机械抛光系统中的振动阻尼
公开(公告)号：US07331847B2
公开(公告)日：2008-02-19
申请号：US11333992
申请日：2006-01-17
申请人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
发明人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
IPC分类号： B24B7/00 , B24B9/00
CPC分类号： B24B37/30 , B24B37/12 , B24B37/32 , B24B41/007
摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
摘要翻译：用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。保持结构和表面限定用于接收基底的空腔。抛光台包括压板，安装在压板上的振动阻尼器和安装在振动阻尼器上的衬底抛光垫。振动阻尼器包括当经受变形时不会反弹到其原始形状的材料。

103. 发明申请

US20070029046A1 Methods and systems for increasing substrate temperature in plasma reactors 审中-公开
标题翻译：在等离子体反应器中提高衬底温度的方法和系统
公开(公告)号：US20070029046A1
公开(公告)日：2007-02-08
申请号：US11196850
申请日：2005-08-04
申请人： Shijian Li , Siqing Lu , Irene Chou , Young Lee , Tetsuya Ishikawa
发明人： Shijian Li , Siqing Lu , Irene Chou , Young Lee , Tetsuya Ishikawa
IPC分类号： C23F1/00 , H01L21/20 , C23C16/00
CPC分类号： C23C16/4581 , C23C16/505 , H01J37/321 , H01J37/32706 , H01J2237/2001 , H01J2237/3321 , H01L21/67069 , H01L21/67248 , H01L21/68742 , H01L21/6875 , H01L21/68757
摘要： A substrate processing system is provided. A housing defines a processing chamber. A plasma-generating system is operatively coupled to the processing chamber. A substrate support member is disposed within the processing chamber and configured to hold a substrate during substrate processing. A ceramic insert is disposed over the substrate support member such that the ceramic insert is disposed between the substrate support member and the substrate during substrate processing. A gas-delivery system is configured to introduce gases into the processing chamber. A controller controls the plasma-generating system and the gas-delivery system.
摘要翻译：提供了基板处理系统。壳体限定处理室。等离子体产生系统可操作地耦合到处理室。衬底支撑构件设置在处理室内并且构造成在衬底处理期间保持衬底。陶瓷插入件设置在衬底支撑构件上方，使得陶瓷插入件在衬底处理期间设置在衬底支撑构件和衬底之间。气体输送系统构造成将气体引入处理室。控制器控制等离子体产生系统和气体输送系统。

104. 发明申请

US20060217049A1 Perforation and grooving for polishing articles 审中-公开
标题翻译：用于抛光物品的穿孔和开槽
公开(公告)号：US20060217049A1
公开(公告)日：2006-09-28
申请号：US11418557
申请日：2006-05-06
申请人： Shijian Li , Liang-Yuh Chen , Alain Duboust
发明人： Shijian Li , Liang-Yuh Chen , Alain Duboust
IPC分类号： H01L21/306 , B24D11/00
CPC分类号： B24B37/24 , B23H5/08 , B24B57/02
摘要： Methods, articles of manufacture, and apparatus are provided for depositing and planarizing one or more layers of material on a substrate, or combinations thereof, are disclosed. In one embodiment, an article of manufacture is provided for polishing a substrate, comprising a polishing article having a polishing surface, a plurality of perforations formed in at least a portion of the polishing article for flow of material therethrough, and a plurality of grooves disposed in the polishing surface. The article of manufacture may be used in a method for processing a substrate, comprising positioning the substrate in an electrolyte solution containing a polishing article, optionally depositing a material on the substrate by an electrochemical deposition method, and polishing the substrate with the polishing article.
摘要翻译：提供了方法，制品和装置，用于沉积和平坦化衬底上的一层或多层材料，或其组合。在一个实施例中，提供了用于抛光衬底的制品，其包括具有抛光表面的抛光制品，在抛光制品的至少一部分中形成的用于材料流动的多个穿孔，以及多个槽，在抛光面上。制造物品可以用于处理基材的方法，包括将基底定位在含有抛光制品的电解质溶液中，任选地通过电化学沉积方法将材料沉积在基底上，并用抛光制品抛光基底。

105. 发明授权

US07059948B2 Articles for polishing semiconductor substrates 失效
公开(公告)号：US07059948B2
公开(公告)日：2006-06-13
申请号：US10026854
申请日：2001-12-20
申请人： Shijian Li , Llang-Yuh Chen , Alain Duboust
发明人： Shijian Li , Llang-Yuh Chen , Alain Duboust
IPC分类号： B24D11/00
CPC分类号： B24B37/24 , B23H5/08 , B24B57/02
摘要： Methods, articles of manufacture, and apparatus are provided for depositing a layer, planarizing a layer, or combinations thereof, a material layer on a substrate. In one embodiment, an article of manufacture is provided for polishing a substrate, comprising a polishing article having a polishing surface, a plurality of passages formed through the polishing article for flow of material therethrough, and a plurality of grooves disposed in the polishing surface. The article of manufacture may be used in a processing system. The article of manufacture may be used in a method for processing a substrate, comprising positioning the substrate in an electrolyte solution containing a polishing article, optionally depositing a material on the substrate by an electrochemical deposition method, and polishing the substrate with the polishing article.

106. 发明申请

US20050241684A1 Single wafer dryer and drying methods 审中-公开
公开(公告)号：US20050241684A1
公开(公告)日：2005-11-03
申请号：US11179926
申请日：2005-07-12
申请人： Younes Achkire , Alexander Lerner , Boris Govzman , Boris Fishkin , Michael Sugarman , Rashid Mavleiv , Haoquan Fang , Shijian Li , Guy Shirazi , Jianshe Tang
发明人： Younes Achkire , Alexander Lerner , Boris Govzman , Boris Fishkin , Michael Sugarman , Rashid Mavleiv , Haoquan Fang , Shijian Li , Guy Shirazi , Jianshe Tang
IPC分类号： H01L21/304 , H01L21/00 , B08B3/00
CPC分类号： H01L21/67034 , B08B3/10 , H01L21/67751 , H01L21/681 , H01L21/68764 , Y10S414/139
摘要： In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

107. 发明授权

US06955516B2 Single wafer dryer and drying methods 有权
标题翻译：单片干燥机和干燥方法
公开(公告)号：US06955516B2
公开(公告)日：2005-10-18
申请号：US10286404
申请日：2002-11-01
申请人： Younes Achkire , Alexander Lerner , Boris T. Govzman , Boris Fishkin , Michael Sugarman , Rashid Mavliev , Haoquan Fang , Shijian Li , Guy Shirazi , Jianshe Tang
发明人： Younes Achkire , Alexander Lerner , Boris T. Govzman , Boris Fishkin , Michael Sugarman , Rashid Mavliev , Haoquan Fang , Shijian Li , Guy Shirazi , Jianshe Tang
IPC分类号： H01L21/304 , H01L21/00 , B65G1/133
CPC分类号： H01L21/67034 , B08B3/10 , H01L21/67751 , H01L21/681 , H01L21/68764 , Y10S414/139
摘要： In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.
摘要翻译：在第一方面，提供一种适于处理晶片的模块。模块包括具有一个或多个特征的处理部分，例如（1）可旋转晶片支撑件，用于从第一取向旋转输入晶片，其中晶片与负载端口对准至第二取向，其中晶片与卸货港（2）捕捉器，其适于在从所述处理部分卸载时与晶片被动接触和行进; （3）适于产生从其一侧到另一侧的层流空气流的封闭输出部分; （4）具有多个晶片接收器的输出部分; （5）浸没式流体喷嘴; 和/或（6）干燥气体导流板等。其它方面包括晶片处理的方法。

108. 发明授权

US06858540B2 Selective removal of tantalum-containing barrier layer during metal CMP 失效
标题翻译：在金属CMP期间选择性去除含钽阻挡层
公开(公告)号：US06858540B2
公开(公告)日：2005-02-22
申请号：US10215521
申请日：2002-08-08
申请人： Lizhong Sun , Stan Tsai , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Stan Tsai , Shijian Li , Fred C. Redeker
IPC分类号： B24B1/00 , C09K13/00 , C11D1/00 , H01L21/285 , H01L21/302 , H01L21/321 , H01L21/768
CPC分类号： H01L21/3212 , H01L21/28568 , H01L21/7684
摘要： A method for performing chemical-mechanical polishing/planarization providing highly selective, rapid removal of a Ta-containing barrier layer from a workpiece surface, such as a semiconductor wafer including a damascene-type Cu-based metallization pattern in-laid in a dielectric layer and including a Ta-containing metal diffusion barrier layer, comprises applying an aqueous liquid composition to the workpiece surface during CMP or to the polishing pad utilized for performing the CMP, the composition comprising at least one reducing agent for reducing transition metal ions to a lower valence state, at least one pH adjusting agent, at least one metal corrosion inhibitor, and water, and optionally includes ions of at least one transition metal, e.g., Cu and Fe ions. According to another embodiment, the aqueous liquid composition contains Ag ions and the at least one reducing agent is omitted.
摘要翻译：一种用于进行化学机械抛光/平面化的方法，其提供从工件表面高度选择性地快速去除含Ta阻挡层，例如包括嵌入在介电层中的镶嵌型Cu基金属化图案的半导体晶片并且包括含Ta的金属扩散阻挡层，包括在CMP期间将水性液体组合物施加到工件表面或用于执行CMP的抛光垫，所述组合物包含至少一种还原剂以将过渡金属离子还原成低级价态，至少一种pH调节剂，至少一种金属腐蚀抑制剂和水，并且任选地包括至少一种过渡金属（例如Cu和Fe离子）的离子。根据另一个实施方案，含水液体组合物含有Ag离子，并且省略了至少一种还原剂。

109. 发明申请

US20050026442A1 Method of chemical mechanical polishing with high throughput and low dishing 失效
标题翻译：化学机械抛光方法，具有高通量和低凹陷
公开(公告)号：US20050026442A1
公开(公告)日：2005-02-03
申请号：US10924417
申请日：2004-08-24
申请人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred Redeker
发明人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred Redeker
IPC分类号： B24B1/00 , B24B5/00 , B24B29/00 , B24B37/04 , C23F1/00 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/768 , H01L21/302 , H01L21/44
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
摘要翻译：提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除残留导电材料。在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

110. 发明授权

US06832948B1 Thermal preconditioning fixed abrasive articles 失效
标题翻译：热预处理固定磨料制品
公开(公告)号：US06832948B1
公开(公告)日：2004-12-21
申请号：US09454354
申请日：1999-12-03
申请人： Manoocher Birang , Ramin Emami , Shijian Li , Fred C. Redeker
发明人： Manoocher Birang , Ramin Emami , Shijian Li , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B37/042 , B24B37/245
摘要： The CMP removal rate of a fixed abrasive article is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water to a temperature of about 90° C. to about 100° C. to increase and stabilize the Cu or Cu alloy CMP removal rate.
摘要翻译：固定磨料制品的CMP去除率增加，并且通过热预处理提高了晶片到晶片的均匀性。实施例包括通过用热水加热至约90℃至约100℃的温度来预固定固定的磨料制品，以增加和稳定Cu或Cu合金CMP去除速率。

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