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101. 发明申请

US20090185312A1 Information storage devices using magnetic domain wall movement 有权
标题翻译：信息存储设备采用磁畴壁运动
公开(公告)号：US20090185312A1
公开(公告)日：2009-07-23
申请号：US12155980
申请日：2008-06-12
申请人： Young-jin Cho , Ji-young Bae , Sung-chul Lee
发明人： Young-jin Cho , Ji-young Bae , Sung-chul Lee
IPC分类号： G11B5/74
CPC分类号： G11C19/0841 , G11C5/02 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： Information storage devices are provided. An information storage device includes a track including at least one Co alloy layer and a soft magnetic layer. The track further includes a plurality of magnetic domains. A current applying element is connected to the track. The track includes a plurality of layers stacked alternately.
摘要翻译：提供信息存储设备。一种信息存储装置，包括至少一个Co合金层和软磁性层的轨道。轨道还包括多个磁畴。电流施加元件连接到轨道。轨道包括交替堆叠的多个层。

102. 发明申请

US20090180210A1 Information storage devices using magnetic domain wall movement, methods of operating the same, and methods of manufacturing the same 有权
标题翻译：使用磁畴壁移动的信息存储设备，操作方法及其制造方法
公开(公告)号：US20090180210A1
公开(公告)日：2009-07-16
申请号：US12155187
申请日：2008-05-30
申请人： Chang-won Lee , Sun-ae Seo , Young-Jin Cho , Sung-chul Lee
发明人： Chang-won Lee , Sun-ae Seo , Young-Jin Cho , Sung-chul Lee
IPC分类号： G11B5/02
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： Information storage devices using magnetic domain wall movement, methods of operating the same, and methods of manufacturing the same are provided. An information storage device includes a first magnetic layer, a heating unit and a magnetic field applying unit. The heating unit heats a first region of the first magnetic layer. The magnetic field applying unit applies a magnetic field to the first region to form a magnetic domain. A wall of the magnetic domain is moved by a current applied to the first magnetic layer.
摘要翻译：提供使用磁畴壁移动的信息存储装置，其操作方法及其制造方法。信息存储装置包括第一磁性层，加热单元和磁场施加单元。加热单元加热第一磁性层的第一区域。磁场施加单元对第一区域施加磁场以形成磁畴。通过施加到第一磁性层的电流使磁畴的壁移动。

103. 发明申请

US20090178431A1 Ice making unit and refrigerator having the same 有权
标题翻译：制冰单元和冰箱具有相同的功能
公开(公告)号：US20090178431A1
公开(公告)日：2009-07-16
申请号：US12314452
申请日：2008-12-10
申请人： Young Jin Cho
发明人： Young Jin Cho
IPC分类号： F25C1/10
CPC分类号： F25C1/04 , F25C5/06 , F25C2305/022 , F25C2400/06 , F25C2400/10
摘要： An ice making unit and a refrigerator having the same are disclosed. The refrigerator includes an ice making unit to make ice pieces. The ice making unit includes a plurality of ice making trays to form ice pieces, a lever part connected to the ice making trays to simultaneously rotate the ice making trays, and a stopper to prevent one of a pair of rotating shafts of each of the ice making trays from being rotated at a predetermined angle or more so that the ice making trays get twisted when the ice making trays are rotated. Accordingly, ice pieces can be separated from the ice making trays by operation of a single lever.
摘要翻译：公开了制冰单元和具有该制冰单元的冰箱。冰箱包括制冰单元，制作冰块。制冰单元包括多个用于形成冰块的制冰托盘，连接到制冰托盘以同时旋转制冰托盘的杆部分，以及用于防止每个冰的一对旋转轴中的一个的塞子使托盘以预定角度或更大的角度旋转，使得当制冰托盘旋转时制冰托盘扭曲。因此，冰块可以通过单个操作杆的操作与制冰盘分离。

104. 发明授权

US07501191B2 Amorphous dielectric thin film and manufacturing method thereof 失效
标题翻译：非晶介质薄膜及其制造方法
公开(公告)号：US07501191B2
公开(公告)日：2009-03-10
申请号：US10953267
申请日：2004-09-30
申请人： Yo-sep Min , Young-jin Cho
发明人： Yo-sep Min , Young-jin Cho
IPC分类号： B32B9/00
CPC分类号： H01L21/02156 , C23C16/401 , H01L21/02153 , H01L21/0228 , H01L21/31691 , Y10T428/12597 , Y10T428/12611
摘要： An amorphous dielectric film for use in a semiconductor device, such as a DRAM, and a method of manufacturing the amorphous dielectric film, includes bismuth (Bi), titanium (Ti), silicon (Si), and oxide (O). The amorphous dielectric film may have a dielectric constant of approximately 60 or higher. The amorphous dielectric film may be expressed by the chemical formula Bi1-x-yTixSiyOz, where 0.2
摘要翻译：用于诸如DRAM的半导体器件中的非晶体介电膜以及制造非晶体介质膜的方法包括铋（Bi），钛（Ti），硅（Si）和氧化物（O）。非晶介质膜可以具有大约60或更高的介电常数。非晶介质膜可以由化学式Bi1-x-yTixSiyOz表示，其中0.2

105. 发明申请

US20080293256A1 Method for forming bismuth titanium silicon oxide thin film 有权
标题翻译：形成铋钛氧化硅薄膜的方法
公开(公告)号：US20080293256A1
公开(公告)日：2008-11-27
申请号：US12153104
申请日：2008-05-14
申请人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
发明人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
IPC分类号： H01L21/316
CPC分类号： H01L21/28185 , C01G29/006 , C01P2002/36 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C04B35/16 , C04B35/475 , C04B35/6264 , C04B2235/3232 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/444 , C04B2235/658 , C04B2235/6581 , C04B2235/76 , H01L21/28194 , H01L21/31691 , H01L28/55 , H01L29/516 , H01L29/517
摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
摘要翻译：具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

106. 发明申请

US20080168794A1 Refrigerator 审中-公开
标题翻译：冰箱
公开(公告)号：US20080168794A1
公开(公告)日：2008-07-17
申请号：US12000011
申请日：2007-12-06
申请人： Young Jin Cho , Tae-Ho Joo
发明人： Young Jin Cho , Tae-Ho Joo
IPC分类号： F25D11/02 , F25D19/00
CPC分类号： F25D23/025 , F25D23/028 , F25D23/04 , F25D23/12 , F25D25/025 , F25D2323/023 , F25D2400/06
摘要： A refrigerator including an auxiliary receiving chamber is disclosed. The refrigerator includes a main body having a storage chamber, and a door which opens or closes the storage chamber and has a receiving space formed at a back side of the door. The door includes an auxiliary storage area having an opening to store goods, an auxiliary receiving chamber disposed in the auxiliary storage area to move back and forth, an auxiliary door to open or close the opening, and an opening/closing member to extract or retract the auxiliary receiving chamber.
摘要翻译：公开了一种包括辅助容纳室的冰箱。冰箱包括具有储存室的主体和打开或关闭储藏室并具有形成在门的后侧的容纳空间的门。该门包括一个辅助存放区域，该辅助存放区域具有一个储存货物的开口，一个辅助容纳室，设置在辅助存储区域中来回移动，一个辅助门以打开或关闭该开口;以及一个打开/关闭构件以提取或缩回辅助接收室。

107. 发明授权

US07399716B2 Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor 有权
标题翻译：氧化铪前体和使用前体形成氧化铪膜的方法
公开(公告)号：US07399716B2
公开(公告)日：2008-07-15
申请号：US11340692
申请日：2006-01-27
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L21/44
CPC分类号： H01L21/02181 , C01G27/02 , C01G27/04 , C01P2006/80 , C07F7/003 , H01L21/02205 , H01L21/28194 , H01L21/3141 , H01L21/31645 , H01L29/517
摘要： A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl4.
摘要翻译：提供氧化铪前体和使用前体形成氧化铪层的方法。氧化铪前体含有与HfCl 4结合的氮化合物。

108. 发明申请

US20080137389A1 Multi-stack memory device 有权
标题翻译：多堆存储器件
公开(公告)号：US20080137389A1
公开(公告)日：2008-06-12
申请号：US11978583
申请日：2007-10-30
申请人： In-Jun Hwang , Sung-hoon Choa , Young-Jin Cho , Kee-Won Kim
发明人： In-Jun Hwang , Sung-hoon Choa , Young-Jin Cho , Kee-Won Kim
IPC分类号： G11C5/02
CPC分类号： G11C5/02 , G11C11/16 , G11C19/0808 , G11C2213/71 , H01L21/8221 , H01L27/0688 , H01L27/11521 , H01L27/11524 , H01L27/11551
摘要： Provided is a multi-stack memory device that includes a storage unit group including a plurality of storage units that are vertically stacked and form a plurality of storage unit rows, and a plurality of transistors connected to the storage unit group, wherein the transistors that are connected to the storage units which are included in at least two rows of the plurality of the storage unit rows and are connected by a common wire. The common wire may be a gate line or a bit line.
摘要翻译：本发明提供一种多层存储装置，其特征在于，包括具有垂直堆叠的多个存储单元和多个存储单元行的存储单元组，以及与所述存储单元组连接的多个晶体管，其中，连接到包含在多个存储单元行中的至少两行的存储单元，并通过公共线连接。公共线可以是栅极线或位线。

109. 发明授权

US07005391B2 Method of manufacturing inorganic nanotube 有权
标题翻译：制造无机纳米管的方法
公开(公告)号：US07005391B2
公开(公告)日：2006-02-28
申请号：US10464860
申请日：2003-06-19
申请人： Yo-sep Min , Eun-ju Bae , Won-bong Choi , Young-jin Cho , Jung-hyun Lee
发明人： Yo-sep Min , Eun-ju Bae , Won-bong Choi , Young-jin Cho , Jung-hyun Lee
IPC分类号： H01L21/31
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/08 , C01G55/00 , C01P2004/03 , C01P2004/04 , C01P2004/13 , C01P2004/64 , C30B25/00 , C30B29/605 , Y10S977/893
摘要： A method of manufacturing an inorganic nanotube using a carbon nanotube (CNT) as a template, includes preparing a template on which a CNT or a CNT array is formed, forming an inorganic thin film on the CNT by depositing an inorganic material on the template using atomic layer deposition (ALD), and removing the CNT to obtain an inorganic nanotube or an inorganic nanotube array, respectively.
摘要翻译：使用碳纳米管（CNT）作为模板制造无机纳米管的方法包括制备在其上形成CNT或CNT阵列的模板，通过在模板上沉积无机材料在CNT上形成无机薄膜，使用原子层沉积（ALD），并分别去除CNT以获得无机纳米管或无机纳米管阵列。

110. 发明申请

US20050260348A1 Thin film including multi components and method of forming the same 有权
标题翻译：薄膜包括多组分及其形成方法
公开(公告)号：US20050260348A1
公开(公告)日：2005-11-24
申请号：US11176657
申请日：2005-07-08
申请人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
IPC分类号： C23C16/44 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/455 , H01L21/316 , C23C16/00 , B32B19/00 , H01L21/31
CPC分类号： C23C16/409 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/45531 , C23C16/45542
摘要： A thin film including multi components and a method of forming the thin film are provided, wherein a method according to an embodiment of the present invention, a substrate is loaded into a reaction chamber. A unit material layer is formed on the substrate. The unit material layer is a mosaic atomic layer composed of two kinds of precursors containing components constituting the thin film. The inside of the reaction chamber is purged, and the MAL is chemically changed. The method of forming the thin film of the present invention requires fewer steps than a conventional method while retaining the advantages of the conventional method, thereby allowing a superior thin film yield in the present invention than previously obtainable.
摘要翻译：提供了包括多组分的薄膜和形成薄膜的方法，其中根据本发明的实施方案的方法将基底装载到反应室中。在基板上形成单位材料层。单元材料层是由包含构成薄膜的成分的两种前体构成的马赛克原子层。反应室的内部被清除，并且MAL被化学地改变。与传统方法相比，形成本发明的薄膜的方法需要更少的步骤，同时保持了常规方法的优点，从而使本发明的薄膜产率优于先前可获得的。

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