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1. 发明申请

US20080137389A1 Multi-stack memory device 有权
标题翻译：多堆存储器件
公开(公告)号：US20080137389A1
公开(公告)日：2008-06-12
申请号：US11978583
申请日：2007-10-30
申请人： In-Jun Hwang , Sung-hoon Choa , Young-Jin Cho , Kee-Won Kim
发明人： In-Jun Hwang , Sung-hoon Choa , Young-Jin Cho , Kee-Won Kim
IPC分类号： G11C5/02
CPC分类号： G11C5/02 , G11C11/16 , G11C19/0808 , G11C2213/71 , H01L21/8221 , H01L27/0688 , H01L27/11521 , H01L27/11524 , H01L27/11551
摘要： Provided is a multi-stack memory device that includes a storage unit group including a plurality of storage units that are vertically stacked and form a plurality of storage unit rows, and a plurality of transistors connected to the storage unit group, wherein the transistors that are connected to the storage units which are included in at least two rows of the plurality of the storage unit rows and are connected by a common wire. The common wire may be a gate line or a bit line.
摘要翻译：本发明提供一种多层存储装置，其特征在于，包括具有垂直堆叠的多个存储单元和多个存储单元行的存储单元组，以及与所述存储单元组连接的多个晶体管，其中，连接到包含在多个存储单元行中的至少两行的存储单元，并通过公共线连接。公共线可以是栅极线或位线。

2. 发明申请

US20070195588A1 Magnetic memory devices using magnetic domain motion 有权
标题翻译：使用磁畴运动的磁存储器件
公开(公告)号：US20070195588A1
公开(公告)日：2007-08-23
申请号：US11707002
申请日：2007-02-16
申请人： Tae-wan Kim , Kee-won Kim , Young-Jin Cho , In-Jun Hwang
发明人： Tae-wan Kim , Kee-won Kim , Young-Jin Cho , In-Jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C19/0808 , G11C19/0841 , G11C2213/77
摘要： A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.
摘要翻译：磁存储器件包括记录层，参考层，第一输入部分和第二输入部分。记录层具有垂直磁化方向和多个磁畴，并且参考层对应于记录层的一部分并具有钉扎磁化方向。记录层具有数据存储单元，其中形成各自包括磁畴的多个数据位区域。磁畴对应于参考层的有效尺寸。第一输入部分输入写入信号和读取信号中的至少一个。第二输入部分电连接到记录层并输入磁畴运动信号，以便将存储在记录层的数据位区域中的数据移动到相邻的数据位区域。

3. 发明申请

US20070183188A1 Magnetic device using magnetic domain dragging and method of operating the same 有权
标题翻译：磁性装置使用磁畴拖曳及其操作方法
公开(公告)号：US20070183188A1
公开(公告)日：2007-08-09
申请号：US11657646
申请日：2007-01-25
申请人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
发明人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C19/0808
摘要： Example embodiments may provide a magnetic device using magnetic domain dragging and a method of operating the same. An example embodiment magnetic device may include a data storage cell with a free layer having a switchable magnetization direction and a plurality of adjoining magnetic domains, a reference layer formed to correspond to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions may be formed in an array in the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell may store a plurality of bits of data in an array, and a first input portion electrically connected to at least one of the data bit regions of the free layer and the reference layer to apply at least one of a writing signal and a reading signal; and a second input portion electrically connected to the free layer to drag data stored in data bit regions of the free layer toward an adjacent data bit region, and applying a dragging signal for magnetic domain dragging.
摘要翻译：示例性实施例可以提供使用磁畴牵引的磁性装置及其操作方法。一个示例性实施例磁性装置可以包括具有自由层的数据存储单元，该自由层具有可切换的磁化方向和多个相邻的磁畴，所述参考层形成为对应于自由层的一部分并且具有钉扎的磁化方向，其中a 可以在自由层中的阵列中形成多个数据位区域，每个数据位区域由参考层的有效大小单位形成，使得数据存储单元可以在多个数据位区域中存储多个数据位阵列，以及电连接到自由层和参考层的数据位区域中的至少一个的第一输入部分，以施加写信号和读信号中的至少一个; 以及第二输入部分，其电连接到所述自由层，以将存储在所述自由层的数据位区域中的数据拖向相邻数据位区域，以及施加用于磁畴拖动的拖动信号。

4. 发明授权

US07548449B2 Magnetic memory device and methods thereof 有权
标题翻译：磁存储器件及其方法
公开(公告)号：US07548449B2
公开(公告)日：2009-06-16
申请号：US11655192
申请日：2007-01-19
申请人： Tae-Wan Kim , In-Jun Hwang , Young-Jin Cho , Kee-Won Kim
发明人： Tae-Wan Kim , In-Jun Hwang , Young-Jin Cho , Kee-Won Kim
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , H01L27/228
摘要： A magnetic memory device and methods thereof are provided. The example magnetic memory device may include a transistor disposed within a given unit cell region and a magnetic tunneling junction (MTJ) element connected to the transistor, the MTJ element including an MTJ cell and first and second pad layers forming a magnetic field at first and second ends of the MTJ cell, the transistor including a drain connected to the first pad layer in the given unit cell region and a bit line, a source connected to the second pad layer in an adjacent unit cell region, and a gate connected to a word line corresponding to the given unit cell region. A first example method may include writing data into a MTJ element by polarizing a selected memory region connected to a word line, a first magnetic field at a first end of the MTJ element controlled by a first transistor corresponding to the selected memory region and a second magnetic field at a second end of the MTJ element controlled by a second transistor associated with an adjacent MJT element, the adjacent MJT element connected to the same word line as the MJT element. A second example method may include applying a first current to a first portion of a MTJ element on a first path from a word line to the MTJ element and applying a second current to a second portion of the MTJ element on a second path from the word line to the MTJ element, each of the first and second currents lower than a current threshold, the current threshold being a minimum current for initiating a polarization of the MTJ element, and a sum of the first and second currents at least equal to the current threshold.
摘要翻译：提供了磁存储器件及其方法。示例磁存储器件可以包括设置在给定单元单元区域内的晶体管和连接到晶体管的磁隧道结（MTJ）元件，MTJ元件包括MTJ单元，第一和第二焊盘层首先形成磁场， MTJ单元的第二端，晶体管包括连接到给定单元单元区域中的第一焊盘层的漏极和位线，连接到相邻单元区域中的第二焊盘层的源极和连接到对应于给定单元格区域的字线。第一示例性方法可以包括通过使连接到字线的所选择的存储器区域偏振来将数据写入MTJ元件中，在由对应于所选择的存储器区域的第一晶体管控制的MTJ元件的第一端处的第一磁场，以及第二由与相邻MJT元件相关联的第二晶体管控制的MTJ元件的第二端处的磁场，相邻的MJT元件连接到与MJT元件相同的字线。第二示例性方法可以包括将第一电流施加到从字线到MTJ元件的第一路径上的MTJ元件的第一部分，并且将第二电流施加到来自该字的第二路径上的MTJ元件的第二部分线路到MTJ元件，第一和第二电流中的每一个低于电流阈值，电流阈值是用于启动MTJ元件的极化的最小电流，以及至少等于电流的第一和第二电流的和阈。

5. 发明申请

US20070195586A1 Magnetic memory device and methods thereof 有权
标题翻译：磁存储器件及其方法
公开(公告)号：US20070195586A1
公开(公告)日：2007-08-23
申请号：US11655192
申请日：2007-01-19
申请人： Tae-Wan Kim , In-Jun Hwang , Young-Jin Cho , Kee-Won Kim
发明人： Tae-Wan Kim , In-Jun Hwang , Young-Jin Cho , Kee-Won Kim
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , H01L27/228
摘要： A magnetic memory device and methods thereof are provided. The example magnetic memory device may include a transistor disposed within a given unit cell region and a magnetic tunneling junction (MTJ) element connected to the transistor, the MTJ element including an MTJ cell and first and second pad layers forming a magnetic field at first and second ends of the MTJ cell, the transistor including a drain connected to the first pad layer in the given unit cell region and a bit line, a source connected to the second pad layer in an adjacent unit cell region, and a gate connected to a word line corresponding to the given unit cell region. A first example method may include writing data into a MTJ element by polarizing a selected memory region connected to a word line, a first magnetic field at a first end of the MTJ element controlled by a first transistor corresponding to the selected memory region and a second magnetic field at a second end of the MTJ element controlled by a second transistor associated with an adjacent MJT element, the adjacent MJT element connected to the same word line as the MJT element. A second example method may include applying a first current to a first portion of a MTJ element on a first path from a word line to the MTJ element and applying a second current to a second portion of the MTJ element on a second path from the word line to the MTJ element, each of the first and second currents lower than a current threshold, the current threshold being a minimum current for initiating a polarization of the MTJ element, and a sum of the first and second currents at least equal to the current threshold.
摘要翻译：提供了磁存储器件及其方法。示例磁存储器件可以包括设置在给定单元单元区域内的晶体管和连接到晶体管的磁隧道结（MTJ）元件，MTJ元件包括MTJ单元，第一和第二焊盘层首先形成磁场， MTJ单元的第二端，晶体管包括连接到给定单元单元区域中的第一焊盘层的漏极和位线，连接到相邻单元区域中的第二焊盘层的源极和连接到对应于给定单元格区域的字线。第一示例性方法可以包括通过使连接到字线的所选择的存储器区域偏振来将数据写入MTJ元件中，在由对应于所选择的存储器区域的第一晶体管控制的MTJ元件的第一端处的第一磁场，以及第二由与相邻MJT元件相关联的第二晶体管控制的MTJ元件的第二端处的磁场，相邻的MJT元件连接到与MJT元件相同的字线。第二示例性方法可以包括将第一电流施加到从字线到MTJ元件的第一路径上的MTJ元件的第一部分，并且将第二电流施加到来自该字的第二路径上的MTJ元件的第二部分线路到MTJ元件，第一和第二电流中的每一个低于电流阈值，电流阈值是用于启动MTJ元件的极化的最小电流，以及至少等于电流的第一和第二电流的和阈。

6. 发明申请

US20090122596A1 Semconductor memory device and method of programming the same 有权
标题翻译：半导体存储器件及其编程方法
公开(公告)号：US20090122596A1
公开(公告)日：2009-05-14
申请号：US12073678
申请日：2008-03-07
申请人： In-Jun Hwang , Hyung-soon Shin , Seung-Jun Lee , Sun-ae Seo , Kee-won Kim , Kwang-seok Kim
发明人： In-Jun Hwang , Hyung-soon Shin , Seung-Jun Lee , Sun-ae Seo , Kee-won Kim , Kwang-seok Kim
IPC分类号： G11C11/14
CPC分类号： G11C11/1697 , G11C11/1653 , G11C11/1673 , G11C11/1675
摘要： Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.
摘要翻译：提供一种半导体存储器件及其编程方法。半导体存储器件包括模式输入值生成单元和逻辑运算单元。模式输入值生成单元将当前驱动电路的输入值之间的连接状态改变为对应于至少两个操作模式中的每一个，并且响应于所述至少两个操作模式定义连接到当前驱动电路的磁存储单元的逻辑功能每个操作模式。逻辑操作单元对根据每个操作模式定义的至少两个磁存储器单元的逻辑功能进行逻辑运算，并产生逻辑运算的结果。

7. 发明授权

US07477539B2 Magnetic device using magnetic domain dragging and method of operating the same 有权
标题翻译：磁性装置使用磁畴拖曳及其操作方法
公开(公告)号：US07477539B2
公开(公告)日：2009-01-13
申请号：US11657646
申请日：2007-01-25
申请人： Kae-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
发明人： Kae-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C19/0808
摘要： Example embodiments may provide a magnetic device using magnetic domain dragging and a method of operating the same. An example embodiment magnetic device may include a data storage cell with a free layer having a switchable magnetization direction and a plurality of adjoining magnetic domains, a reference layer formed to correspond to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions may be formed in an array in the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell may store a plurality of bits of data in an array, and a first input portion electrically connected to at least one of the data bit regions of the free layer and the reference layer to apply at least one of a writing signal and a reading signal; and a second input portion electrically connected to the free layer to drag data stored in data bit regions of the free layer toward an adjacent data bit region, and applying a dragging signal for magnetic domain dragging.
摘要翻译：示例性实施例可以提供使用磁畴牵引的磁性装置及其操作方法。一个示例性实施例磁性装置可以包括具有自由层的数据存储单元，该自由层具有可切换的磁化方向和多个相邻的磁畴，所述参考层形成为对应于自由层的一部分并且具有钉扎的磁化方向，其中a 可以在自由层中的阵列中形成多个数据位区域，每个数据位区域由参考层的有效大小单位形成，使得数据存储单元可以在多个数据位区域中存储多个数据位阵列，以及电连接到自由层和参考层的数据位区域中的至少一个的第一输入部分，以施加写信号和读信号中的至少一个; 以及第二输入部分，其电连接到所述自由层，以将存储在所述自由层的数据位区域中的数据拖向相邻数据位区域，以及施加用于磁畴拖动的拖动信号。

8. 发明申请

US20110272741A1 High electron mobility transistors and methods of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US20110272741A1
公开(公告)日：2011-11-10
申请号：US13064287
申请日：2011-03-16
申请人： In-Jun Hwang
发明人： In-Jun Hwang
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/2003 , H01L29/42316 , H01L29/66462
摘要： High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a source electrode, a gate electrode, a drain electrode, a channel formation layer including at least a 2-dimensional electron gas (2DEG) channel, a channel supplying layer for forming the 2DEG channel in the channel formation layer, a portion of the channel supplying layer including a first oxygen treated region. The channel supplying layer may include a second oxygen treated region that extends from the first oxygen treated region towards the drain electrode, and the depth and concentration of oxygen of the second oxygen treated region may be less than those of the first oxygen treated region.
摘要翻译：高电子迁移率晶体管（HEMT）及其制造方法。 HEMT可以包括源电极，栅电极，漏电极，至少包括二维电子气体（2DEG）沟道的沟道形成层，用于在沟道形成层中形成2DEG沟道的沟道供给层，所述通道供给层的一部分包括第一氧处理区域。通道供给层可以包括从第一氧处理区域朝向漏电极延伸的第二氧处理区域，并且第二氧处理区域的氧深度和浓度可以小于第一氧处理区域的深度和浓度。

9. 发明授权

US09729841B2 Video decoding system having compensation function 有权
公开(公告)号：US09729841B2
公开(公告)日：2017-08-08
申请号：US14360253
申请日：2012-07-12
申请人： In-Jun Hwang
发明人： In-Jun Hwang
IPC分类号： H03M1/12 , H04N9/64 , H04N9/68 , H04N9/44 , H04N5/205 , H04N7/10
CPC分类号： H04N9/646 , H04N5/205 , H04N7/102 , H04N9/44 , H04N9/68
摘要： The present invention relates to a video decoding system having a compensation function, the video decoding system comprising: one AD converter; a synchronized signal level detector for detecting a synchronized signal level using a digital signal output from the AD converter; a color burst level detector for detecting a color burst level using the digital signal output from the AD converter; a compensation apparatus for compensating the video level and the high frequency components of an analog signal by using information detected by the synchronized signal level detector and the color burst level detector, and for compensating and transmitting a synchronized signal level to the AD converter; and a decoding apparatus for outputting a digital component image signal (YCrCb) using the digital signal output from the AD converter.

10. 发明申请

US20140328409A1 VIDEO DECODING SYSTEM HAVING COMPENSATION FUNCTION 有权
标题翻译：具有补偿功能的视频解码系统
公开(公告)号：US20140328409A1
公开(公告)日：2014-11-06
申请号：US14360253
申请日：2012-07-12
申请人： In-Jun Hwang
发明人： In-Jun Hwang
IPC分类号： H04N19/44 , H04N19/89
CPC分类号： H04N9/646 , H04N5/205 , H04N7/102 , H04N9/44 , H04N9/68
摘要： The present invention relates to a video decoding system having a compensation function, the video decoding system comprising: one AD converter; a synchronized signal level detector for detecting a synchronized signal level using a digital signal output from the AD converter; a color burst level detector for detecting a color burst level using the digital signal output from the AD converter; a compensation apparatus for compensating the video level and the high frequency components of an analog signal by using information detected by the synchronized signal level detector and the color burst level detector, and for compensating and transmitting a synchronized signal level to the AD converter; and a decoding apparatus for outputting a digital component image signal (YCrCb) using the digital signal output from the AD converter.
摘要翻译：本发明涉及一种具有补偿功能的视频解码系统，该视频解码系统包括：一个AD转换器; 同步信号电平检测器，用于使用从AD转换器输出的数字信号来检测同步信号电平; 彩色电平检测器，用于使用从AD转换器输出的数字信号来检测色同步电平; 补偿装置，用于通过使用由同步信号电平检测器和色同步电平检测器检测的信息来补偿模拟信号的视频电平和高频分量，并用于补偿并向AD转换器发送同步的信号电平; 以及使用从AD转换器输出的数字信号输出数字分量图像信号（YCrCb）的解码装置。

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