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91. 发明专利

GB1585790A HIGH VOLTAGE THYRISTOR 未知
公开(公告)号：GB1585790A
公开(公告)日：1981-03-11
申请号：GB3001077
申请日：1977-07-18
申请人： WESTINGHOUSE ELECTRIC CORP
IPC分类号： H01L29/06 , H01L29/40 , H01L29/74 , H01L29/743

92. 发明专利

IE801816L THYRISTOR WITH CONTINUOUS EMITTER SHUNT 未知
公开(公告)号：IE801816L
公开(公告)日：1981-02-28
申请号：IE181680
申请日：1980-08-29
申请人： WESTINGHOUSE ELECTRIC CORP
IPC分类号： H01L21/263 , H01L29/32 , H01L29/74 , H01L29/743
摘要： A four-layer semiconductor thyristor including a planar recombination region extending on both sides of a planar cathode-emitter junction.

93. 发明专利

DE2121086B2 未知
公开(公告)号：DE2121086B2
公开(公告)日：1979-03-22
申请号：DE2121086
申请日：1971-04-29
申请人： RCA CORP., NEW YORK, N.Y. (V.ST.A.)
发明人： THOMAS, ALBERT WILLIAM, SOMERVILLE, N.J. , NEILSON, JOHN MANNING SAVIDGE, NORRISTOWN, PA. , GREENBERG, LEON STANELY, SOMERVILLE, N.J.
IPC分类号： H01L21/00 , H01L27/06 , H01L29/74 , H01L29/861 , H01L29/743
摘要： A semiconductor switching device comprising a silicon controlled rectifier (SCR) and a diode rectifier integrally connected in parallel with the SCR in a single semiconductor body. The device is of the NPNP or PNPN type, having gate, cathode, and anode electrodes. A portion of each intermediate N and P region makes ohmic contact to the respective anode or cathode electrode of the SCR. In addition, each intermediate region includes a highly conductive edge portion. These portions are spaced from the adjacent external regions by relatively low conductive portions, and limit the conduction of the diode rectifier to the periphery of the device. A profile of gold recombination centers further electrically isolates the central SCR portion from the peripheral diode portion.

94. 发明专利

FR2386906A1 未知
公开(公告)号：FR2386906A1
公开(公告)日：1978-11-03
申请号：FR7809529
申请日：1978-03-31
申请人： SIEMENS AG
IPC分类号： H01L29/74 , H01L31/111 , H01L31/10 , H01L29/743

95. 发明专利

AU2461477A PNPN SWITCH 未知
公开(公告)号：AU2461477A
公开(公告)日：1978-11-02
申请号：AU2461477
申请日：1977-04-27
申请人： HITACHI LTD
发明人： OHHINATA ICHIRO , OKUHARA SHINZI , KAWANAMI MITSURU , TOKUNAGA MICHIO
IPC分类号： H02M1/06 , H02M1/08 , H03K17/60 , H03K17/615 , H03K17/73 , H03K17/72 , H01L29/743

96. 发明专利

DE1614844C3 未知
公开(公告)号：DE1614844C3
公开(公告)日：1978-09-14
申请号：DET0034381
申请日：1967-07-21
申请人： TESZNER, STANISLAS , SOCIETE DE CONSTRUCTIONS ELECTROMECANIQUES JEUMONT- SCHNEIDER
发明人： TESZNER, STANISLAS, PARIS
IPC分类号： H01L29/745 , H01L29/76 , H01L29/743 , H01L29/747
摘要： 1,198,132. Semi-conductcr devices. SOC DE CONSTRUCTIONS ELECTROMECANIQUES JEUMONT-SCHNEIDER and S. TESZNER. 18 July, 1967 [22 July, 1966] No. 33019/67. Heading H1K. The blocking process in a bi-stable semiconductor switching device functions in a manner analogous to the mode of operation of a field-effect gridistor or bivalent triode. The device has at least four layers 80, 82/83, 86, 87 (Fig. 14) of alternating conductivity types, the layer 82/83 having embedded therein a grid 85 of opposite conductivity type to the layer 82/83. Current electrodes 81, 89 are provided respectively on the end layers 80, 87, and control electrodes 92, 93 are attached respectively to the grid 85 and the layer 82/83. The device is rendered conductive by a pulse applied between the control electrode 93 and the current terminal 81, as in conventional PNPN switches, and is rendered non-conductive by a pulse applied between the grid electrode 92 and control electrode 93. In the embodiment shown this latter pulse renders the P+ grid 85 negative relative to the surrounding N region 82/83, thereby closing the N channels 84 by the field effect. Shunting P+ channels 88 may or may not be provided through the N+ emitter region 87. A bidirectional version of this embodiment has an additional N+ end layer (29), Fig. 7 (not shown), with or without P+ shunting channels (30) therethrough. In this case an additional control electrode is provided so that the central N layer (11) carries one electrode (20, 21) on each side of the P+ grid (12), which again carries an electrode (10). Control pulses are applied as with the above embodiment, the terminal (20) or (21) being used dependent upon the polarity of the current being switched. A control circuit to determine this is described. Fig. 15 shows an alternative form of the device of Fig. 14, in which the P+ grid 96 is incorporated in one of the P + layers lying completely across the current path. The grid 96 lies within an N region 98, the blocking operation occurring due to a widening of the spacecharge region associated with the narrow portions of the P + layer 96/97 which close the meshes of the grid 96 when the grid 96 is made negative relative to the N layer 98. The control electrode 104 may be dispensed with for low operating currents and voltages, the blocking pulse being applied between the grid electrode 103 and the cathode 101. The conductive state is restored by a pulse between the cathode 101 and the grid electrode 103, whereby the grid 96 is rendered positive relative to the N+ emitter region 95. A bidirectional version of this embodiment is also described in which two symmetrically opposed P+ grids (64, 66), Fig. 11 (not shown), are provided within the central N layer (65), each grid being similar in form to that shown in Fig. 15. An additional N+ end layer (67) completes the N+P+NP+N+ structure, which carries three control electrodes, (59, 61, 60) on the P+ grids (64, 66) and central N layer (65) respectively. P+ shunting channels (63, 68) may or may not be provided through the outer N+ layers (62, 67). This device may alternatively have a PNPNP structure. Control circuits for this device are described. The devices shown may be formed in N-type Si wafers, but III-V compounds and other group IV materials may also be used. Masked diffusion, alloying or epitaxial deposition may be used to form the various layers. In particular with regard to Fig. 14, the initial wafer lies within the lines A-B, the lower part of the P+ grid 85 being diffused therein. The upper part of the device is then epitaxially deposited, and the remaining diffusions are carried out. B and P are referred to as diffusion dopants, while Al or Au/Sb may be alloyed in. The Specification includes descriptions of the structures and modes of operation of a bipolar gridistor and a bivalent triode, the latter device operating either as an injection transistor or as a field-effect device.

97. 发明专利

FR2377096A1 未知
公开(公告)号：FR2377096A1
公开(公告)日：1978-08-04
申请号：FR7800320
申请日：1978-01-06
申请人： RCA CORP
IPC分类号： H01L21/331 , H01L29/08 , H01L29/73 , H01L29/74 , H01L29/747 , H01L29/861 , H01L29/743
摘要： A semiconductor thyristor device having a cathode region and an anode region comprises ballast means adjacent thereto. The device further comprises first and second electrode means which are positioned such that only the cathode region and the anode region respectively are contacted thereby. The present structure is compatible with conventional device structures.

98. 发明专利

GB1515260A REVERSE CONDUCTION THYRISTOR 未知
公开(公告)号：GB1515260A
公开(公告)日：1978-06-21
申请号：GB1272677
申请日：1977-03-25
申请人： ALSTHOM ATLANTIQUE
IPC分类号： H01L29/74 , H01L29/861 , H01L29/743
摘要： 1515260 Thyristors ALSTHOM-ATLANTIQUE SA 25 March 1977 [8 April 1976] 12726/77 Heading H1K A reverse conduction thyristor structure comprises a thyristor zone 2, 4 and a diode zone 6 connected in anti-parallel, and is characterized by a blocking layer of one conductivity type having a conductive sub-layer 14, 140 in contact with a thyristor injection layer 10 and with a diode contact layer 12, and a resistive sub-layer 16, 160 in contact with a thyristor control layer 18 and with a diode injection layer 180. The conductive sub-layer, which is thicker in the diode zone 8 than in the thyristor zone, has the thickness in the latter zone less than one-third the thickness of the resistive sub-layer, and has the impurity concentration at least equal to ten times that of the resistive sub-layer. A trigger thyristor with its emitter 20 initiates the firing of the main thyristor (zone 4). When cathode 34 is negatively biased with respect to anode 30, and when the bias voltage is reversed, the thyristor stops conducting, and the diode becomes conductive. A process of manufacturing the structure includes known diffusion and masking methods. In addition to the diffusion of conductivity-type determining impurities, gold is diffused to provide trapping sites.

99. 发明专利

FR2356279A1 未知
公开(公告)号：FR2356279A1
公开(公告)日：1978-01-20
申请号：FR7708373
申请日：1977-03-21
申请人： GEN ELECTRIC
发明人： TEMPLE VICTOR ALBERT KEITH
IPC分类号： H01L29/74 , H01L31/111 , H01L29/743

100. 发明专利

GB1495447A SEMI-CONDUCTOR SWITCHING DEVICE 未知
公开(公告)号：GB1495447A
公开(公告)日：1977-12-21
申请号：GB749575
申请日：1975-02-21
申请人： THOMSON CSF
IPC分类号： H01L29/74 , H01L27/10 , H01L29/743
摘要： 1495447 Semi-conductor devices THOMSONCSF 21 Feb 1975 [22 Feb 1974] 7495/75 Heading H1K In an integrated structure comprising a thyristor and a diode in the same semi-conductor body and connected together in inverseparallel relationship a conductive layer M which interconnects the anode 11 of the diode and the cathode 17 of the thyristor is spaced from the intervening semi-conductor area 8 by an insulating layer 31, e.g. of SiO 2 . This ensures an adequate spacing S between the two components, and preferably this mutual isolation is enhanced by the presence of Au recombination centres between the components.

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