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    • 92. 发明申请
    • EXPOSURE METHOD AND LITHOGRAPHY SYSTEM, EXPOSURE APPARATUS AND METHOD OF PRODUCING THE APPARATUS, AND METHOD OF PRODUCING DEVICE
    • 曝光方法和平版印刷系统,曝光装置及其制造方法及其制造方法
    • WO99036949A1
    • 1999-07-22
    • PCT/JP1999/000122
    • 1999-01-18
    • G03F7/20H01L21/027
    • G03F7/7045G03F7/70258G03F7/70458G03F7/70558
    • Based on the information about the capability of a first exposure device (20A or 20B) of correcting the distortion of the image of a first mask transferred onto a wafer (W), the image forming characteristics of a second exposure apparatus (20B or 20A) are adjusted. Therefore, image forming characteristics can be appropriately adjusted (decreasing the correction residual error), considering the distortion of the pattern image of the first mask transferred onto the wafer by the first exposure apparatus. That is, in order to properly transfer the pattern of a second mask onto the wafer by using the second exposure apparatus, the image forming characteristics of the second exposure apparatus are so adjusted that the distortion of the image of the pattern of the second mask is almost the same of that of the first mask. Hence, good image registration is realized.
    • 基于关于第一曝光装置(20A或20B)的校正转印到晶片(W)上的第一掩模的图像的畸变的能力的信息,第二曝光装置(20B或20A)的图像形成特性, 被调整。 因此,考虑到通过第一曝光装置转印到晶片上的第一掩模的图案图像的失真,可以适当地调整图像形成特性(减小校正残差)。 也就是说,为了通过使用第二曝光装置将第二掩模的图案适当地转印到晶片上,调整第二曝光装置的图像形成特性,使得第二掩模的图案的图像的失真为 几乎与第一个面具相同。 因此,实现良好的图像配准。