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91. 发明公开

EP1630617A2 A method of performing resist process calibration and optimisation, and a method of performing optimisation of the diffractive optical element (DOE) for providing optical proximity effect (OPE) matching between different lithography systems 有权
$A method of performing resist process calibration and optimisation, and a method of performing optimisation of the diffractive optical element (DOE) for providing optical proximity effect (OPE) matching between different lithography systems$
标题翻译：对于衍射光学元件（DOE）的优化方法用于匹配不同的光刻系统之间的光学邻近效应（OPE）
公开(公告)号：EP1630617A2
公开(公告)日：2006-03-01
申请号：EP05255216.3
申请日：2005-08-25
申请人： ASML MaskTools B.V.
发明人： Park, Sangbong , Chen, Jang Fung , Liebchen, Armin
IPC分类号： G03F7/20
CPC分类号： G03F7/70458 , G03F7/70108 , G03F7/705 , G03F7/70525
摘要： A method of optimising a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimising performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimising the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimises the imaging of the target pattern.
摘要翻译：优化使用的过程与光刻系统中的多个方法。该方法包括的步骤：（a）确定的采矿校准的抗蚀剂对于给定的工艺和目标图案利用第一光刻系统模型; （B）选择的第二光刻系统被利用于图像目标图案利用给定的过程中，能够与衍射光学元件中的多个之一，每一个都具有相应的可变的衍射光学元件的所述多个被配置的第二光刻系统用于优化给定的衍射光学元件的性能参数; （c）选择衍射光学元件的多个一和模拟第二光刻系统利用衍射光学元件的所述多个所选择的一个的成像性能，所述校准的抗蚀剂模型和所述目标图案; 和（d）通过执行遗传算法识别的衍射光学元件那样的多个所选择的一个的参数值的优化衍射光学元件的所述多个所选择的一个的成像性能优化所述目标图案的成像，

92. 发明公开

EP1378788A2 Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device 有权
标题翻译：横向电场的液晶显示器，用于扫描曝光它们的制备方法和装置
公开(公告)号：EP1378788A2
公开(公告)日：2004-01-07
申请号：EP03014265.7
申请日：2003-06-25
申请人： Obayashiseikou Co., Ltd.
发明人： Hirota, Naoto
IPC分类号： G02F1/1362 , G02F1/1368 , G02F1/1343 , G03F1/00
CPC分类号： G03F7/7045 , G02F1/134363 , G02F1/136204 , G02F1/136286 , G02F1/1368 , G02F2001/136236 , G03B27/10 , G03F1/144 , G03F1/50 , G03F7/70358 , G03F7/70458
摘要： A process of manufacturing a liquid crystal display device of transverse electric-field type, wherein a halftone photomask (60) which is used to form a photoresist pattern has a fully light-shielding area (62) preventing UV irradiation of a portion of an active matrix substrate in which a thin-film transistor element (58) is to be formed, so that the photoresist- pattern includes a positive resist portion (6) which has a first thickness and which covers the above-indicated portion of the substrate. The halftone mask (60) further has a fully light-transmitting area (65) which permits fully UV transmission therethrough to provide the photoresist pattern with a resist-free area (8) which covers to a portion of the substrate in which a contact hole (59) serving as a third connection portion connecting an external scanning-line driver circuit and a scanning-line terminal portion (19) through a junction electrode (21) is to be formed. The photoresist pattern also has a positive resist portion (7) which covers the other portion of the substrate and which has a second thickness smaller than the first thickness. Also disclosed in a scan-exposing device (100, 110, 120, 130) used in the process.
摘要翻译：制造横向电场型的液晶显示装置，worin其用于形成光刻胶图案的半色调光掩模（60）的所有的方法，具有防止活性的一部分的紫外线照射完全光屏蔽区域（62）基质底物，其中A的薄膜晶体管元件（58）要被形成的，所以没有光致抗蚀剂图案包括正型抗蚀剂的部分（6），其具有第一厚度和覆盖所述基材的上面指出的部分。半色调掩模（60）还具有一个完全光透射区域（65），其允许充分UV透射那里通过以提供与覆盖于基板的一部分的无抗蚀剂区域（8）的光致抗蚀剂图案，其中的接触孔（59），作为连接到外部扫描线驱动电路，并通过接线电极（21）的扫描线终端部分（19）的第三连接部分被形成。光致抗蚀剂图案从而具有正型抗蚀剂的部分（7），其覆盖衬底的其它部分和具有第二厚度比第一厚度小。所以盘在该方法中使用的扫描曝光装置（100，110，120，130）游离缺失。

93. 发明专利

JP2016066091A モデルベースのプロセスシミュレーション方法有权
标题翻译：基于模型的过程模拟方法
公开(公告)号：JP2016066091A
公开(公告)日：2016-04-28
申请号：JP2015238241
申请日：2015-12-07
申请人：エーエスエムエルネザーランズビー.ブイ.
发明人：イエ,ジュン , カオ,ユ , グーセンス,ロナルド , シャオ,ウェンジン , コーンメン,ジム
IPC分类号： G03F1/36 , G03F7/20
CPC分类号： B29C67/0088 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
摘要：【課題】差分モデルを用いたリソグラフィシミュレーションを提供する。【解決手段】差分モデルは、調整可能なおよび非調整可能な設定に関連する2つのスキャナの結像特性における差を記述する。2つのスキャナのうちの一方のスキャナのモデルは、もう一方のスキャナのモデルと差分モデルとを用いて導出される。同様に、感度モデルは、様々なスキャナ設定に関連する1つのスキャナの結像特性における差を記述する。さらに、プリント結果との比較によって差分モデルと感度モデルを較正する。【選択図】図8
摘要翻译：要解决的问题：使用差分模型提供光刻模拟。解决方案：差分模型描述了与可调谐和不可调设置相关的两台扫描仪的成像特性的差异。通过使用其他扫描仪和差分模型的模型，推导出两种扫描仪之一的模型。类似地，灵敏度模型描述了与不同扫描仪设置相关的一个扫描仪的成像特征的差异。此外，通过与打印结果的比较来校准差分模型和灵敏度模型。选择图：图8

95. 发明专利

JP5104305B2 Exposure apparatus, exposure method and device manufacturing method 有权
公开(公告)号：JP5104305B2
公开(公告)日：2012-12-19
申请号：JP2007524031
申请日：2006-06-30
申请人：株式会社ニコン
发明人：誠義新井
IPC分类号： H01L21/027 , G03F7/20 , H01S3/00
CPC分类号： G03F7/70458 , G03F7/7005 , G03F7/70525 , G03F7/70558 , G03F7/70575 , G03F7/70625 , H01S3/10069 , H01S3/1055 , H01S3/1394 , H01S3/225 , H01S2301/08

96. 发明专利

JP4022374B2 Manufacturing method and system of the semiconductor device 有权
公开(公告)号：JP4022374B2
公开(公告)日：2007-12-19
申请号：JP2001017887
申请日：2001-01-26
申请人：株式会社ルネサステクノロジ
发明人：康裕吉武 , 佳幸宮本 , 俊一松本
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70525 , G03F7/70458 , G03F7/70533 , G03F7/70591 , G03F7/70633

97. 发明专利

JP3952248B2 Exposure method and method of manufacturing a mask used to it 有权
公开(公告)号：JP3952248B2
公开(公告)日：2007-08-01
申请号：JP2000039080
申请日：2000-02-17
申请人：三星電子株式会社Samsung Electronics Co.,Ltd.
发明人：承亨南 , 泰鎬張
IPC分类号： H01L21/027 , H01L21/768 , G03F1/68 , G03F7/20
CPC分类号： G03F7/70458
摘要： An exposing method comprises use of different kinds of aligning and exposing apparatuses having different alignment and exposure characteristics. Capability to select a suitable aligning and exposing apparatus for each layer to be formed is accomplished by manufacturing a mask used for the exposure to be compatible with different kinds of aligning and exposing apparatuses.

98. 发明专利

JP3626448B2 Exposure method 有权
公开(公告)号：JP3626448B2
公开(公告)日：2005-03-09
申请号：JP2001363133
申请日：2001-11-28
申请人：株式会社東芝
发明人：達彦東木 , 慶太浅沼 , 真歩高桑
IPC分类号： G03F7/22 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F7/70525 , G03F7/70258 , G03F7/70458 , G03F7/70541 , G03F7/70633
摘要： Lens distortion correction is characterized by obtaining a correction parameter by using the difference between the latest QC data used when exposing a overlaying layer and the latest QC data used when exposing a overlaid layer.

99. 发明申请

US20180203361A1 METHOD FOR DETERMINING THE DOSE CORRECTIONS TO BE APPLIED TO AN IC MANUFACTURING PROCESS BY A MATCHING PROCEDURE 审中-公开
公开(公告)号：US20180203361A1
公开(公告)日：2018-07-19
申请号：US15763829
申请日：2016-10-05
申请人： ASELTA NANOGRAPHICS
发明人： Mohamed SAIB , Patrick SCHIAVONE , Thiago FIGUEIRO , Sébastien BAYLE
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70458 , G03F7/70516
摘要： A method is provided to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function. A reference physical model of the reference process is determined. A sizing correction to be applied to the edges of the design produced by the reference process is calculated. It is then converted, totally or partially, into a dose correction.

100. 发明授权

US09921486B2 Multiscale patterning of a sample with apparatus having both thermo-optical lithography capability and thermal scanning probe lithography capability 有权
公开(公告)号：US09921486B2
公开(公告)日：2018-03-20
申请号：US15104596
申请日：2014-11-13
申请人： SWISSLITHO AG
发明人： Urs T Duerig , Stefan Fringes , Felix Holzner , Armin W Knoll
IPC分类号： G03F7/20
CPC分类号： G03F7/70591 , G03F7/70383 , G03F7/7045 , G03F7/70458
摘要： The present invention provides a method for multiscale patterning of a sample. The method includes: placing the sample in an apparatus having both thermo-optical lithography capability and thermal scanning probe lithography capability; and patterning two patterns onto the sample, respectively by: thermo-optical lithography, wherein light is emitted from a light source onto the sample to heat the latter and thereby write a first pattern that is the largest of the two patterns; and thermal scanning probe lithography, wherein the sample and a heated probe tip are brought in contact for writing a second pattern that has substantially smaller critical dimensions than the first pattern. There is also provided an apparatus for multiscale patterning of a sample.

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