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    • 5. 发明公开
    • Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device
    • 横向电场的液晶显示器,用于扫描曝光它们的制备方法和装置
    • EP1378788A2
    • 2004-01-07
    • EP03014265.7
    • 2003-06-25
    • Obayashiseikou Co., Ltd.
    • Hirota, Naoto
    • G02F1/1362G02F1/1368G02F1/1343G03F1/00
    • G03F7/7045G02F1/134363G02F1/136204G02F1/136286G02F1/1368G02F2001/136236G03B27/10G03F1/144G03F1/50G03F7/70358G03F7/70458
    • A process of manufacturing a liquid crystal display device of transverse electric-field type, wherein a halftone photomask (60) which is used to form a photoresist pattern has a fully light-shielding area (62) preventing UV irradiation of a portion of an active matrix substrate in which a thin-film transistor element (58) is to be formed, so that the photoresist- pattern includes a positive resist portion (6) which has a first thickness and which covers the above-indicated portion of the substrate. The halftone mask (60) further has a fully light-transmitting area (65) which permits fully UV transmission therethrough to provide the photoresist pattern with a resist-free area (8) which covers to a portion of the substrate in which a contact hole (59) serving as a third connection portion connecting an external scanning-line driver circuit and a scanning-line terminal portion (19) through a junction electrode (21) is to be formed. The photoresist pattern also has a positive resist portion (7) which covers the other portion of the substrate and which has a second thickness smaller than the first thickness. Also disclosed in a scan-exposing device (100, 110, 120, 130) used in the process.
    • 制造横向电场型的液晶显示装置,worin其用于形成光刻胶图案的半色调光掩模(60)的所有的方法,具有防止活性的一部分的紫外线照射完全光屏蔽区域(62) 基质底物,其中A的薄膜晶体管元件(58)要被形成的,所以没有光致抗蚀剂图案包括正型抗蚀剂的部分(6),其具有第一厚度和覆盖所述基材的上面指出的部分。 半色调掩模(60)还具有一个完全光透射区域(65),其允许充分UV透射那里通过以提供与覆盖于基板的一部分的无抗蚀剂区域(8)的光致抗蚀剂图案,其中的接触孔 (59),作为连接到外部扫描线驱动电路,并通过接线电极(21)的扫描线终端部分(19)的第三连接部分被形成。 光致抗蚀剂图案从而具有正型抗蚀剂的部分(7),其覆盖衬底的其它部分和具有第二厚度比第一厚度小。 所以盘在该方法中使用的扫描曝光装置(100,110,120,130)游离缺失。