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91. 发明公开

EP1133684A1 STRUCTURE MICRO-USINEE A MEMBRANE DEFORMABLE ET SON PROCEDE DE REALISATION 有权
标题翻译：根据上述制造变形膜和过程的微观力学结构
公开(公告)号：EP1133684A1
公开(公告)日：2001-09-19
申请号：EP99956159.0
申请日：1999-11-26
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： JAUSSAUD, Claude , CLERC, Jean-Frédéric
IPC分类号： G01L9/00
CPC分类号： B81C1/0069 , B81B2201/0264 , B81B2203/0315 , G01L9/0042 , G01L9/0055
摘要： The invention concerns a micromachined structure capable of operating at high temperature, comprising a deformable membrane integral with a support deforming it. The membrane comprises at least a membrane layer (6) made of a material retaining its elasticity at said high operating temperature, the membrane layer supporting elements (10) detecting the membrane deformation made of semiconductor material, and has an electrically insulating interface with the detecting elements consisting of an electrically insulating layer (8). The support (5) is made of a material enabling the membrane to be released by a microelectronic technique.

92. 发明公开

EP0684462A2 Thermischer Sensor/Aktuator in Hableitermaterial 失效
标题翻译：热传感器/致动器Hableitermaterial。
公开(公告)号：EP0684462A2
公开(公告)日：1995-11-29
申请号：EP95106968.1
申请日：1995-05-08
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Hierold, Christofer, Dr.
IPC分类号： G01K7/02 , H01L49/00 , H01L27/16
CPC分类号： H01L27/16 , B81B3/0081 , B81B2201/0278 , B81B2203/0315 , B81C1/00246 , B81C1/0069 , B81C2201/053 , B81C2203/0136 , B81C2203/0735 , G01F1/6845 , G01F1/6888 , G01K7/015 , G01P15/0802
摘要： Halbleiterbauelement mit monolithisch integrierten elektronischen Schaltungen und monolithisch integriertem Sensor/Aktuator, bei dem der Sensor/Aktuator mit Methoden des Surface-Micromachining hergestellt ist in einer z. B. mit Sensorstegen (6) strukturierten Sensorschicht (3) aus Polysilizium und diese Sensorstege (6) von einem Siliziumsubstrat (1) durch einen in einer Opferschicht (2) hergestellten und mit einer Verschlußschicht (5) nach außen gasdicht verschlossenen Hohlraum (4) thermisch isoliert sind.
摘要翻译：具有在其与表面微机械加工的方法中的传感器/致动器的Z制备。B.用传感器腹板（6），被构造传感器层单片集成电子电路和单片集成传感器/致动器的半导体器件（3）的多晶硅和该传感器腹板（6 ）（由制造（在牺牲层2）和（有关闭层5的硅衬底1））（向外气密腔4）是绝热的。

93. 发明授权

US09774313B1 Laterally-doped MEMS resonator 有权
公开(公告)号：US09774313B1
公开(公告)日：2017-09-26
申请号：US14569538
申请日：2014-12-12
申请人： SiTime Corporation
发明人： Charles I. Grosjean , Ginel C. Hill , Paul M. Hagelin , Renata Melamud Berger , Aaron Partridge , Markus Lutz
IPC分类号： H02N1/00 , H03H9/24 , H03H3/007
CPC分类号： H03H9/2457 , B81C1/0069 , H03H3/0072 , H03H3/0076 , H03H9/1057
摘要： A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.

94. 发明申请

US20160200564A1 SENSOR PACKAGE 有权
标题翻译：传感器包装
公开(公告)号：US20160200564A1
公开(公告)日：2016-07-14
申请号：US14993738
申请日：2016-01-12
申请人： Sensirion AG
发明人： David Pustan , Werner Hunziker
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/0081 , B81B2201/0278 , B81B2203/0127 , B81B2207/098 , B81C1/00158 , B81C1/0069 , G01N33/0009 , H01L23/3107 , H01L2924/0002 , H01L2924/00
摘要： A sensor package comprises a carrier comprising a through hole, and a sensor chip with a front side and a back side and a recess in the back side. The sensor chip is attached to the carrier with its back side facing the carrier by means of an attachment layer thereby defining a first area of the carrier the sensor chip rests on and a second area of the carrier facing the recess. The through hole is arranged in the first area of the carrier.
摘要翻译：传感器组件包括一个载体，该载体包括一个通孔，以及一个具有前侧和后侧的传感器芯片以及在后侧的凹槽。传感器芯片通过附接层附接到载体上，其背面面向载体，从而限定传感器芯片搁置的载体的第一区域，并且载体的面向凹部的第二区域。通孔布置在载体的第一区域中。

95. 发明申请

US20150284243A1 TEMPERATURE-COMPENSATED MICRO-ELECTROMECHANICAL DEVICE, AND METHOD OF TEMPERATURE COMPENSATION IN A MICRO-ELECTROMECHANICAL DEVICE 审中-公开
标题翻译：温度补偿型微电化学装置及微机电装置中的温度补偿方法
公开(公告)号：US20150284243A1
公开(公告)日：2015-10-08
申请号：US14271009
申请日：2014-05-06
申请人： STMicroelectronics S.r.l.
发明人： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
IPC分类号： B81C1/00
CPC分类号： B81C1/0069 , B81B3/0081 , B81B2201/025 , B81C1/00158 , B81C1/00666 , G01C19/56 , G01C19/5755 , G01P1/006 , G01P15/125 , G01P15/18 , G01P2015/0814 , H03H9/02448 , H03H2009/02496 , Y10T29/43
摘要： A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.
摘要翻译：微机电装置包括半导体衬底，其中第一微结构和第二参考微结构被集成。第一微结构和第二微结构被布置在基板中，以便由于基板的热膨胀而产生相等的应变。此外，第一微结构相对于基板设置有可移动部件和固定部件，而第二微结构具有与第一微结构基本对称的形状，但是相对于基板固定。通过从第一微结构的电特性减去第一微结构的电特性的变化，可以补偿由热膨胀或收缩的变化引起的第一微结构的电特性的变化。

96. 发明授权

US08916407B1 MEMS device and method of manufacturing same 有权
标题翻译： MEMS器件及其制造方法
公开(公告)号：US08916407B1
公开(公告)日：2014-12-23
申请号：US13837407
申请日：2013-03-15
申请人： SiTime Corporation
发明人： Charles I Grosjean , Ginel Hill , Paul M. Hagelin , Renata Melamud Berger , Aaron Partridge , Markus Lutz
IPC分类号： H01L21/00 , B81C1/00
CPC分类号： H03H9/2457 , B81C1/0069 , H03H3/0072 , H03H3/0076 , H03H9/1057
摘要： A method of manufacturing a micromachined resonator having a moveable member comprising forming the moveable member from a material having a first concentration of dopants of a first impurity type, depositing a dopant carrier layer on or over at least a portion of the moveable member, wherein the dopant carrier layer includes one or more dopants of the first impurity type, transferring at least a portion of the one or more dopants from the dopant carrier layer to the moveable member, wherein, in response, the concentration of dopants of the first impurity type in the moveable member increases (for example, to greater than 1019 cm−3, and preferably between 1019 cm−3 and 1021 cm−3). The method further includes removing the dopant carrier layer and may include providing an encapsulation structure over the moveable member of the micromachined resonator.
摘要翻译：一种制造具有可移动构件的微加工谐振器的方法，包括由具有第一杂质类型的第一掺杂浓度的材料形成可移动构件，在该可动构件的至少一部分上或之上沉积掺杂剂载体层，其中，掺杂剂载体层包括一种或多种第一杂质类型的掺杂剂，将一种或多种掺杂剂的至少一部分从掺杂剂载体层转移到可移动构件，其中，作为响应，第一杂质类型的掺杂剂的浓度可移动构件增加（例如，大于1019cm-3，优选在1019cm-3和1021cm-3之间）。该方法还包括去除掺杂剂载体层，并且可以包括在微加工谐振器的可移动构件之上提供封装结构。

97. 发明授权

US08686555B2 Integrated heater on MEMS cap for wafer scale packaged MEMS sensors 有权
标题翻译： MEMS盖上的集成加热器，用于晶圆级封装的MEMS传感器
公开(公告)号：US08686555B2
公开(公告)日：2014-04-01
申请号：US13527497
申请日：2012-06-19
申请人： Goksen G. Yaralioglu , Martin Lim
发明人： Goksen G. Yaralioglu , Martin Lim
IPC分类号： H01L23/12
CPC分类号： B81B7/0087 , B81B2207/012 , B81C1/0069 , H01L23/345 , H01L24/48 , H01L2224/48091 , H01L2924/00014 , H01L2924/01322 , H01L2924/1461 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A system and method for controlling temperature of a MEMS sensor are disclosed. In a first aspect, the system comprises a MEMS cap encapsulating the MEMS sensor and a CMOS die vertically arranged to the MEMS cap. The system includes a heater integrated into the MEMS cap. The integrated heater is activated to control the temperature of the MEMS sensor. In a second aspect, the method comprises encapsulating the MEMS sensor with a MEMS cap and coupling a CMOS die to the MEMS cap. The method includes integrating a heater into the MEMS cap. The integrated heater is activated to control the temperature of the MEMS sensor.
摘要翻译：公开了一种用于控制MEMS传感器的温度的系统和方法。在第一方面，该系统包括封装MEMS传感器的MEMS盖和垂直地布置到MEMS盖的CMOS模头。该系统包括集成到MEMS盖中的加热器。集成加热器被激活以控制MEMS传感器的温度。在第二方面，该方法包括用MEMS盖封装MEMS传感器并将CMOS管芯耦合到MEMS盖。该方法包括将加热器集成到MEMS盖中。集成加热器被激活以控制MEMS传感器的温度。

98. 发明授权

US08464418B2 Method for temperature compensation in MEMS resonators with isolated regions of distinct material 有权
标题翻译：具有不同材料隔离区域的MEMS谐振器中的温度补偿方法
公开(公告)号：US08464418B2
公开(公告)日：2013-06-18
申请号：US12638919
申请日：2009-12-15
申请人： Emmanuel P. Quevy , David H. Bernstein
发明人： Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H04R31/00 , H01L21/76
CPC分类号： B81C1/0069 , B81C1/00349 , B81C1/00523 , G02B6/358 , H03H3/0076 , H03H9/2405 , H03H9/2457 , H03H2009/02496 , H03H2009/2442 , Y10T29/42 , Y10T29/49005 , Y10T29/49165
摘要： MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.
摘要翻译：包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。第一种材料具有与第二种材料不同的杨氏模量温度系数。在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。在一个这样的实施例中，第一材料是半导体，第二材料是电介质。在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。

99. 发明申请

US20110084781A1 Method For Temperature Compensation In MEMS Resonators With Isolated Regions Of Distinct Material 有权
标题翻译：具有独特材料区域的MEMS谐振器中的温度补偿方法
公开(公告)号：US20110084781A1
公开(公告)日：2011-04-14
申请号：US12950519
申请日：2010-11-19
申请人： Emmanuel P. Quevy , David H. Bernstein
发明人： Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H03H9/24 , H01L21/30
CPC分类号： B81C1/0069 , B81C1/00349 , B81C1/00523 , G02B6/358 , H03H3/0076 , H03H9/2405 , H03H9/2457 , H03H2009/02496 , H03H2009/2442 , Y10T29/42 , Y10T29/49005 , Y10T29/49165
摘要： MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.
摘要翻译：包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。第一种材料具有与第二种材料不同的杨氏模量温度系数。在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。在一个这样的实施例中，第一材料是半导体，第二材料是电介质。在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。

100. 发明授权

US07674410B2 Method for manufacturing a thermal interface material 有权
标题翻译：制造热界面材料的方法
公开(公告)号：US07674410B2
公开(公告)日：2010-03-09
申请号：US11321316
申请日：2005-12-29
申请人： Hua Huang , Yang Wu , Chang-Hong Liu , Shou-Shan Fan
发明人： Hua Huang , Yang Wu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： B32B3/30
CPC分类号： H01L23/373 , B81C1/0069 , H01L23/427 , H01L2924/0002 , Y10S977/753 , Y10S977/789 , Y10S977/84 , Y10S977/842 , Y10S977/88 , H01L2924/00
摘要： A method for manufacturing a thermal interface material comprising the steps of: providing a carbon nanotube array comprising a plurality of carbon nanotubes each having two opposite ends; forming a composite phase change material by filling clearances in the carbon nanotube array with a phase change material; forming a section with predetermined thickness by cutting the composite phase change material along a direction cross to an alignment direction of the carbon nanotubes; and heating up the section to a temperature higher than a phase change temperature of the phase change material and cooling down after the two opposite ends of the carbon nanotubes protruding out of the section.
摘要翻译：一种制造热界面材料的方法，包括以下步骤：提供包含多个碳纳米管的碳纳米管阵列，每个碳纳米管具有两个相对端; 通过用相变材料填充碳纳米管阵列中的间隙来形成复合相变材料; 通过沿着与碳纳米管的排列方向交叉的方向切割复合相变材料，形成具有预定厚度的区段; 并将所述部分加热到高于所述相变材料的相变温度的温度，并且在所述碳纳米管的两个相对端突出到所述部分之后冷却。

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