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91. 发明申请

US20080113090A1 Anti-reflective seed layers for the fabrication of wrap around and trailing shields 失效
标题翻译：抗反射种子层，用于制造包裹和后盾
公开(公告)号：US20080113090A1
公开(公告)日：2008-05-15
申请号：US11595765
申请日：2006-11-10
申请人： Hieu Lam , Patrick Rush Webb , Yi Zheng
发明人： Hieu Lam , Patrick Rush Webb , Yi Zheng
IPC分类号： B05D5/12
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/314 , G11B5/3163 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Methods and structures for the fabrication of wrap around and trailing shield structures are disclosed. Seed layers having anti-reflective properties are utilized, eliminating the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.
摘要翻译：公开了用于制造包裹和后挡板结构的方法和结构。利用具有抗反射性能的种子层，消除了在屏蔽电镀之前沉积，然后去除传统的无机抗反射涂层的需要。

92. 发明申请

US20070026537A1 Method for fabricating a magnetic head for perpendicular recording using a CMP lift-off and resistant layer 失效
标题翻译：使用CMP剥离层和耐电层制造用于垂直记录的磁头的方法
公开(公告)号：US20070026537A1
公开(公告)日：2007-02-01
申请号：US11184364
申请日：2005-07-18
申请人： Ming Jiang , Sue Zhang , Yi Zheng
发明人： Ming Jiang , Sue Zhang , Yi Zheng
IPC分类号： G11B5/33 , H01L21/00
CPC分类号： G11B5/3163 , G11B5/1278
摘要： A method using a CMP resistant hardmask in a process of fabricating a pole piece for a magnetic head is described. A set of layers used as the mask for milling the pole piece preferably includes a CMP resistant hardmask of silicon dioxide, a resist hardmask, an upper hardmask and a photoresist mask respectively. A multi-step reactive-ion etching (RIE) process is preferably used to sequentially remove the excess materials in the layer stack to ultimately define the multilayer mask for the pole piece. The excess pole piece material is then milled away. The wafer is then refilled with a nonmagnetic material such as alumina. A CMP liftoff is used to remove the resist hardmask. The material for the CMP resistant hardmask is selected to have a high resistance to the CMP liftoff process in comparison to the refill material. The CMP resistant hardmask is preferably then removed by a RIE process.
摘要翻译：描述了在制造用于磁头的极片的工艺中使用CMP耐磨硬掩模的方法。作为用于研磨极片的掩模的一组层优选分别包括二氧化硅的CMP耐磨硬掩模，抗蚀剂硬掩模，上硬掩模和光致抗蚀剂掩模。优选使用多步反应离子蚀刻（RIE）工艺来顺序地去除层叠中的多余材料以最终限定极片的多层掩模。然后将多余的极片材料磨掉。然后用非磁性材料如氧化铝再填充晶片。 CMP剥离用于去除抗蚀剂硬掩模。选择用于CMP耐磨硬掩模的材料以与补充材料相比具有对CMP剥离工艺的高抗性。然后优选通过RIE工艺去除CMP耐磨硬掩模。

93. 发明申请

US20070020386A1 Encapsulation of chemically amplified resist template for low pH electroplating 审中-公开
标题翻译：封装化学放大抗蚀剂模板，用于低pH电镀
公开(公告)号：US20070020386A1
公开(公告)日：2007-01-25
申请号：US11186166
申请日：2005-07-20
申请人： Daniel Bedell , John Lam , Matthew Last , Kim Lee , Jyh-Shuey Lo , Dennis McKean , Chun-Ming (Albert) Wang , Yi Zheng
发明人： Daniel Bedell , John Lam , Matthew Last , Kim Lee , Jyh-Shuey Lo , Dennis McKean , Chun-Ming (Albert) Wang , Yi Zheng
IPC分类号： B05D5/12 , B05D5/00 , B05D1/36 , B05C11/02
CPC分类号： G03F7/40 , C25D5/022 , C25D7/12 , G03F7/2024
摘要： Systems and methods for encapsulation of chemically amplified resist template for low pH electroplating are disclosed. In a first method embodiment, a resist template structure is formed on a wafer. Substantially all surfaces of the resist template structure are encapsulated to form an encapsulated structure. Magnetic materials are plated onto the encapsulated structure.
摘要翻译：公开了用于封装用于低pH电镀的化学放大抗蚀剂模板的系统和方法。在第一方法实施例中，在晶片上形成抗蚀剂模板结构。基本上将抗蚀剂模板结构的所有表面封装形成封装结构。将磁性材料电镀在封装结构上。

94. 发明授权

US07151053B2 Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications 有权
标题翻译：在大马士革应用中沉积包括掺杂氧化硅的电介质材料的方法
公开(公告)号：US07151053B2
公开(公告)日：2006-12-19
申请号：US11118678
申请日：2005-04-28
申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
发明人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
摘要翻译：提供了用于沉积氧掺杂介电层的方法。氧掺杂介电层可用于阻挡层或硬掩模。在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

95. 发明授权

US07089651B2 Process of manufacturing coil layers using a novel combination of photoexposure and thermal curing to achieve shape control of a photoresist material 失效
标题翻译：使用光曝光和热固化的新颖组合制造线圈层以实现光致抗蚀剂材料的形状控制的工艺
公开(公告)号：US07089651B2
公开(公告)日：2006-08-15
申请号：US09971277
申请日：2001-10-05
申请人： Yi Zheng , Yi-Chun Liu
发明人： Yi Zheng , Yi-Chun Liu
IPC分类号： G11B5/17 , G03F7/00
CPC分类号： G11B5/313 , G11B5/17 , G11B5/3116 , G11B5/3163 , Y10T29/49034 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064 , Y10T29/49073
摘要： A method for forming at least two layers of electrical coils and their supportive resistive layers for a magnetic write head having an ultra-short yoke so that the second and any additional coil layers are formed on flat resistive surfaces to eliminate problems associated with inter- and intra-layer shorting and with shorting between coil and yoke. The resistive layers are formed with flat surfaces and desired apex angles by using a novel two-step photoresist scheme in which a layer of photoresist is first photoexposed and developed, then photoexposed a second time to cure a surface region that will remain flat during a final low temperature curing process.
摘要翻译：一种用于形成具有超短磁轭的磁写头的至少两层电线圈及其支撑电阻层的方法，使得第二和任何附加线圈层形成在平坦电阻表面上，以消除与中间和/ 层间短路和线圈与轭之间短路。电阻层通过使用新型的两步光致抗蚀剂方案形成具有平坦表面和期望的顶角，其中光致抗蚀剂层首先被光曝光和显影，然后再次光照曝光以固化在最终的期间保持平坦的表面区域低温固化工艺。

96. 发明授权

US07060330B2 Method for forming ultra low k films using electron beam 失效
标题翻译：使用电子束形成超低k膜的方法
公开(公告)号：US07060330B2
公开(公告)日：2006-06-13
申请号：US10302393
申请日：2002-11-22
申请人： Yi Zheng , Srinivas D. Nemani , Li-Qun Xia , Eric Hollar , Kang Sub Yim
发明人： Yi Zheng , Srinivas D. Nemani , Li-Qun Xia , Eric Hollar , Kang Sub Yim
IPC分类号： C23C16/56
CPC分类号： C23C16/401 , B05D1/60 , B05D3/068 , C23C16/56 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02351 , H01L21/31058 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/7681
摘要： The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.
摘要翻译：本发明通常提供使用电子束处理沉积低介电常数膜的方法。在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面组在基板表面上。该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。

97. 发明授权

US07056560B2 Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD) 失效
标题翻译：基于等离子体增强化学气相沉积（PECVD）的线性硅前体和有机致孔剂的混合系统的超低介电材料
公开(公告)号：US07056560B2
公开(公告)日：2006-06-06
申请号：US10773060
申请日：2004-02-04
申请人： Kang Sub Yim , Yi Zheng , Srinivas D. Nemani , Li-Qun Xia , Eric P. Hollar
发明人： Kang Sub Yim , Yi Zheng , Srinivas D. Nemani , Li-Qun Xia , Eric P. Hollar
IPC分类号： C23C16/56 , C23C16/48 , C23C16/42 , C23C16/40 , H01L21/473
CPC分类号： C23C16/401 , B05D1/60 , B05D3/068 , C23C16/30 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02351 , H01L21/31058 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/3148 , H01L21/7681 , H01L21/76814 , H01L21/76825
摘要： A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.
摘要翻译：一种沉积低介电常数膜的方法是通过使含有一种或多种线性无氧有机硅化合物的气体混合物，一种或多种包含一个环和一个或两个碳 - 碳双键的无氧烃化合物反应在环和一种或多种氧化性气体。任选地，低介电常数膜在沉积后进行后处理。一方面，后处理是电子束处理。

98. 发明授权

US07011890B2 Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices 失效
标题翻译：用于纳米电子器件的具有改进的机械和电学性能的调制/复合CVD低k膜
公开(公告)号：US07011890B2
公开(公告)日：2006-03-14
申请号：US10378783
申请日：2003-03-03
申请人： Son Van Nguyen , Yi Zheng
发明人： Son Van Nguyen , Yi Zheng
IPC分类号： B32B25/20 , B05D3/06
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/515 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/02351 , H01L21/3122 , H01L21/31633 , Y10T428/31663
摘要： A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes alternating sublayers, which include at least one carbon-doped silicon oxide sublayer. The sublayers are deposited by a plasma process than includes pulses of RF power. The alternating sublayers are deposited from two or more compounds that include at least one organosilicon compound. The two or more compounds and processing conditions are selected such that adjacent sublayers have different and improved mechanical properties.
摘要翻译：提供了一种沉积低介电常数膜的方法。低介电常数膜包括交替的亚层，其包括至少一个碳掺杂的氧化硅子层。子层通过等离子体处理而不是包括RF功率的脉冲进行沉积。交替的亚层由两种或更多种包含至少一种有机硅化合物的化合物沉积。选择两种或更多种化合物和加工条件使得相邻的亚层具有不同的和改进的机械性能。

99. 发明申请

US20060043615A1 Methods and systems of enhancing stepper alignment signals and metrology alignment target signals 失效
标题翻译：增强步进对准信号和计量校准目标信号的方法和系统
公开(公告)号：US20060043615A1
公开(公告)日：2006-03-02
申请号：US10928466
申请日：2004-08-26
申请人： Yi Zheng , Howard Zolla , Nian-Xiang Sun , Hamid Balamane
发明人： Yi Zheng , Howard Zolla , Nian-Xiang Sun , Hamid Balamane
IPC分类号： H01L23/544
CPC分类号： G03F9/708 , G03F9/7076 , G03F9/7084
摘要： Methods and systems of enhancing stepper alignment signals and metrology alignment target signals. In one embodiment, a plurality of alternating rows comprising a first material of a first height and a second material of a second height are constructed. The first material and the second material are selected to enhance the contrast of the mark when imaged for alignment of photolithographic structures.
摘要翻译：增强步进对准信号和计量校准目标信号的方法和系统。在一个实施例中，构造了包括第一高度的第一材料和第二高度的第二材料的多个交替排。选择第一材料和第二材料以增强对于光刻结构的对准成像时的标记的对比度。

100. 发明申请

US20050211265A1 Method for cleaning a process chamber 审中-公开
标题翻译：清洁处理室的方法
公开(公告)号：US20050211265A1
公开(公告)日：2005-09-29
申请号：US11132895
申请日：2005-05-19
申请人： Yi Zheng , Vinita Singh , Srinivas Nemani , Chen-an Chen , Ju-Hyung Lee , Shankar Venkataraman
发明人： Yi Zheng , Vinita Singh , Srinivas Nemani , Chen-an Chen , Ju-Hyung Lee , Shankar Venkataraman
IPC分类号： B08B7/00 , C23C16/44 , B08B6/00
CPC分类号： C23C16/4405 , B08B7/00 , Y10S134/902 , Y10S438/905
摘要： Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.
摘要翻译：介绍了沉积室清洗方法和设备。清洁方法包括使用远程等离子体源从清洁气体产生反应物质以清洁沉积室。在室清洁期间可以使用氦气或氩气流。射频功率还可以与远程等离子体源组合使用以清洁沉积室。

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