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91. 发明授权

US06399873B1 Stacked photovoltaic device 有权
标题翻译：堆叠式光伏器件
公开(公告)号：US06399873B1
公开(公告)日：2002-06-04
申请号：US09257054
申请日：1999-02-25
申请人： Masafumi Sano , Tetsuro Nakamura
发明人： Masafumi Sano , Tetsuro Nakamura
IPC分类号： H01L31075
CPC分类号： H01L31/076 , H01L31/1816 , H01L31/1824 , H01L31/202 , H01L31/206 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon non-single crystal semiconductors. An amorphous silicon layer is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon layer is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon layer is used as the i-type layer of a third p-i-n junction, the first to third layers being in order from the light incident side. In this way, a stacked photovoltaic device can be provided which is practical and low-cost and yet has high reliability and high photoelectric conversion efficiency.
摘要翻译：层叠的光伏器件包括叠层的至少三个p-i-n结构成器件，每个具有由非硅单晶半导体形成的p型层，i型层和n型层。非晶硅层用作第一pin结的i型层，微晶硅层用作第二pin结的i型层，微晶硅层用作i型层第三针结，第一至第三层从光入射侧依次排列。以这种方式，可以提供实用且低成本但具有高可靠性和高光电转换效率的叠层光伏器件。

92. 发明授权

US06180870B2 Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US06180870B2
公开(公告)日：2001-01-30
申请号：US08917888
申请日：1997-08-27
申请人： Masafumi Sano , Tetsuro Nakamura
发明人： Masafumi Sano , Tetsuro Nakamura
IPC分类号： H01L310264
CPC分类号： H01L31/076 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： In a photovoltaic device having a plurality of pin structures, the pin structures comprise a first pin structure, a second pin structure and a third pin structure in the order from the light-incident side, each having an i-type semiconductor layer, and the i-type semiconductor layer of the first pin structure comprises amorphous silicon, the i-type semiconductor layer of the second pin structure comprises microcrystalline silicon and the i-type semiconductor layer of the third pin structure comprises amorphous silicon germanium or microcrystalline silicon germanium. The photovoltaic device according to the present invention provides a superior photoelectric conversion efficiency and less causing photo-deterioration.
摘要翻译：在具有多个引脚结构的光电器件中，引脚结构包括从光入射侧开始的顺序的第一引脚结构，第二引脚结构和第三引脚结构，每个具有i型半导体层，并且第一引脚结构的i型半导体层包括非晶硅，第二引脚结构的i型半导体层包括微晶硅，第三引脚结构的i型半导体层包括非晶硅锗或微晶硅锗。根据本发明的光电器件提供优异的光电转换效率并且导致光劣化较少。

93. 发明授权

US5635408A Method of producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US5635408A
公开(公告)日：1997-06-03
申请号：US429721
申请日：1995-04-27
申请人： Masafumi Sano , Keishi Saitoh
发明人： Masafumi Sano , Keishi Saitoh
IPC分类号： H01L31/052 , H01L31/075 , H01L31/20 , H01L31/18
CPC分类号： H01L31/076 , H01L31/056 , H01L31/075 , H01L31/202 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521 , Y10S438/905 , Y10S438/909
摘要： A method of producing a semiconductor device including a substrate and a semiconductor region, the semiconductor region including at least one pin structure in the form of a multi-layer structure consisting of a non-single crystal n-type (or p-type) layer containing silicon, a non-single crystal i-type layer containing silicon, and a non-single crystal p-type (or n-type) layer containing silicon, the method being characterized in that it includes a step of performing plasma treatment on the surface of the substrate or the surface of one semiconductor layer, wherein the plasma treatment is performed in an atmosphere including a hydrogen gas and another gas containing silicon atoms without or with very thin deposition of a film onto the surface.In this method, the hydrogen gas ambient is excited into a stable plasma state, and impurities adsorbed on the surface of the chamber wall or contained in the chamber wall are prevented from being incorporated into the semiconductor layers thereby achieving a high performance photovoltaic semiconductor device.
摘要翻译：一种制造包括衬底和半导体区域的半导体器件的方法，所述半导体区域包括由非单晶n型（或p型）层构成的多层结构形式的至少一个引脚结构含硅的非单晶i型层和含有硅的非单晶p型（或n型）层，该方法的特征在于包括对其进行等离子体处理的步骤衬底的表面或一个半导体层的表面，其中等离子体处理在包括氢气和含有硅原子的另一种气体的气氛中进行，没有或非常薄的膜沉积到表面上。在该方法中，氢气环境被激发成稳定的等离子体状态，并且防止吸附在室壁表面或容纳在室壁中的杂质被并入半导体层中，从而实现高性能的光电半导体器件。

94. 发明授权

US5144550A Test run control method 失效
标题翻译：测试运行控制方法
公开(公告)号：US5144550A
公开(公告)日：1992-09-01
申请号：US582203
申请日：1990-10-01
申请人： Takao Sasaki , Kunihiko Murakami , Masafumi Sano
发明人： Takao Sasaki , Kunihiko Murakami , Masafumi Sano
IPC分类号： G05B19/4068 , G05B19/4093
CPC分类号： G05B19/4068 , G05B2219/35295 , G05B2219/36079 , G05B2219/36525
摘要： A test run control method tests a computerized numerical control (CNC) apparatus to check a generated NC program. Data are read block by block from an NC program in response to a test run start command (ST1), the data are converted into execution blocks while forwarding a tool in a forward travel, and the data in the form of execution blocks and model data necessary for a preliminary processing are stored in a reverse function memory. The tool is reversed in a reverse travel based on the data in the form of execution blocks stored in the reverse function memory in response to a reverse command (ST2). The reverse travel is stopped at a given time (P11) in response to a stop command (ST3) to allow the NC program to be edited in a prescribed range. The program is editged in the prescribed range (N112) with an editing function. The preliminary processing is effected on the basis of the modal data stored in the reverse function memory in response to a test run restart command (ST5), and the edited NC program is executed. With the above method, the NC program can be checked and modified in a simple operation.

95. 发明授权

US5065333A Method of involute interpolation in three dimensions 失效
标题翻译：三维相关插值方法
公开(公告)号：US5065333A
公开(公告)日：1991-11-12
申请号：US408501
申请日：1989-08-21
申请人： Hideaki Kawamura , Kentaro Fujibayashi , Masafumi Sano
发明人： Hideaki Kawamura , Kentaro Fujibayashi , Masafumi Sano
IPC分类号： G05B19/4103 , G05B19/41
CPC分类号： G05B19/41 , G05B2219/34144
摘要： An involute interpolation method for a computerized numerical control apparatus having a rotational axis and a linear axis is effected by giving commands for a direction in which an involute curve (ICl) rotates, the position of the center of a base circle (BC), the radius (R) of the base circle, and a Z-axis, and interpolating the involute curve (ICl) and the Z-axis according to the commands. Interpolated distances are converted to those along the rotational axis, the linear axis, and the Z-axis for the control of a machine tool (9).

96. 发明授权

US4987460A Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US4987460A
公开(公告)日：1991-01-22
申请号：US406815
申请日：1989-09-13
申请人： Katsuji Takasu , Masafumi Sano , Hisanori Tsuda , Yutaka Hirai
发明人： Katsuji Takasu , Masafumi Sano , Hisanori Tsuda , Yutaka Hirai
IPC分类号： H01L33/00 , H01L33/06 , H01L33/18 , H01L33/42
CPC分类号： H01L33/42 , B82Y20/00 , H01L33/0012 , H01L33/0058 , H01L33/06 , H01L33/18 , H05B33/145
摘要： A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and fluorine atoms laminated and having a homojunction, and at least a pair of electrodes connected electrically to said luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 5.times.10.sup.16 cm.sup.-3.ev.sup.-1 or less.
摘要翻译：发光器件具有发光层，其具有层叠并具有同质结的硅原子，碳原子和氟原子的至少两层的非单晶材料，以及至少一对电连接到所述发光层的电极，光学带隙为2.0eV以上的非单晶硅层和中间间隙的局部水平密度为5×10 16 cm -3ev-1以下。

97. 发明授权

US4942058A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4942058A
公开(公告)日：1990-07-17
申请号：US363309
申请日：1989-06-08
申请人： Masafumi Sano
发明人： Masafumi Sano
IPC分类号： C23C16/02 , C23C16/24 , C23C16/44 , C23C16/452 , C23C16/455 , C30B25/02 , C30B28/14 , C30B29/06 , H01L21/205
CPC分类号： C23C16/24 , C23C16/0236 , C23C16/452 , H01L21/02422 , H01L21/0243 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S117/904 , Y10S117/905 , Y10S438/913
摘要： A process for forming a crystalline deposited film on a substrate in a film forming space comprising (a) preparing the surface of the substrate by selectively irradiating the surface with an energy beam of an electromagnetic wave or an electron beam through an atmosphere of a gas to provide regions on which crystal nuclei are selectively formed, (b) forming the crystalline deposited film on the substrate surface by separately introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation, the activated species (B) being chemically mutually reactive with the activated species (A), the two activated species forming a mixture to effect a chemical reaction therebetween and thereby effecting the formation of the crystalline deposited film, and (c) exposing the crystalline deposited film surface to a gaseous substance (E) capable of effecting an etching action thereon and thereby effecting crystal growth in a specific face direction.
摘要翻译：一种在成膜空间中在基板上形成结晶沉积膜的方法，包括：（a）通过选择性地用气体的气氛的电磁波或电子束的能量束来选择性地照射该表面，提供选择性地形成晶核的区域，（b）通过分别引入由含有硅和卤素的化合物（SX）分解形成的活化物质（A）和活化物质（A），从而在基板表面上形成结晶沉积膜 B）由用于成膜的化学物质（B）形成，所述活化物质（B）与活化物质（A）化学相互反应，所述两种活化物质形成混合物以在其间进行化学反应，从而进行形成的结晶沉积膜，和（c）将结晶沉积膜表面暴露于能够实现蚀刻活性的气态物质（E）从而在特定的面方向上实现晶体生长。

98. 发明授权

US4921722A Method for forming deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US4921722A
公开(公告)日：1990-05-01
申请号：US786700
申请日：1985-10-11
申请人： Yoshiyuki Osada , Hisanori Tsuda , Masafumi Sano , Satoshi Omata , Katsuji Takasu , Yutaka Hirai
发明人： Yoshiyuki Osada , Hisanori Tsuda , Masafumi Sano , Satoshi Omata , Katsuji Takasu , Yutaka Hirai
IPC分类号： H01L31/04 , C23C16/24 , C23C16/452 , H01L21/205 , H01L21/263
CPC分类号： C23C16/24 , C23C16/452 , H01L21/02532 , H01L21/0262
摘要： A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.
摘要翻译：通过形成通式SinHm的氢化硅化合物的气氛形成沉积膜的方法，其中n为1以上的整数，m为2以上的整数，在容纳基板的室内形成通过激发所述化合物进行分解或聚合，在所述基板上含有硅的沉积膜包括将气态自由基聚合引发剂引入所述室并利用光能，由此激发所述化合物以进行其分解或聚合。

99. 发明授权

US4893154A Electroluminescent device 失效
标题翻译：电致发光器件
公开(公告)号：US4893154A
公开(公告)日：1990-01-09
申请号：US309023
申请日：1989-02-08
申请人： Yutaka Hirai , Masafumi Sano , Hisanori Tsuda , Katsuji Takasu
发明人： Yutaka Hirai , Masafumi Sano , Hisanori Tsuda , Katsuji Takasu
IPC分类号： H01L33/06 , H01L33/16 , H01L33/34 , H01L33/42
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0033
摘要： An electroluminescent device, which emits light by recombination of the carriers injected or excited by light of energy of electrical field, comprising an active layer which includes a semiconductor layer of a super-lattice structure. The layer in the super-lattice structure is changed in effective band gap by an electrical field externally applied to vary the emitted light wavelength. The semiconductor layer of said super-lattice structure comprising an non-single crystalline semiconductor material.
摘要翻译：一种电致发光器件，其通过由电场能量的光注入或激发的载流子的复合而发光，该有源层包括超晶格结构的半导体层。超晶格结构中的层通过外部施加的电场改变有效带隙，以改变发射的光波长。所述超晶格结构的半导体层包括非单晶半导体材料。

100. 发明授权

US4645684A Method for forming deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US4645684A
公开(公告)日：1987-02-24
申请号：US783490
申请日：1985-10-03
申请人： Yoshiyuki Osada , Hisanori Tsuda , Masafumi Sano , Satoshi Omata , Katsuji Takasu , Yutaka Hirai
发明人： Yoshiyuki Osada , Hisanori Tsuda , Masafumi Sano , Satoshi Omata , Katsuji Takasu , Yutaka Hirai
IPC分类号： H01L51/42 , B05D3/06 , B05D7/24 , H01L21/20 , H01L21/205 , H01L31/04
CPC分类号： B05D1/60 , B05D1/62 , B05D3/061 , Y02E10/549
摘要： A method for forming a deposited film comprises forming in a vacuum chamber housing a substrate therein a deposited film containing silicon on the substrate by subjecting a gas represented by the general formula: ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4, can be the same or different and are each independently hydrogen or a hydrocarbon group, to polymerization.
摘要翻译：一种用于形成沉积膜的方法包括在真空室中形成一个在基片上容纳基底的沉积膜，所述沉积膜在基底上通过使由下列通式表示的气体：其中R1，R2，R3和R4可以是相同或不同，各自独立地为氢或烃基，进行聚合。

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