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    • 91. 发明授权
    • Nonvolatile semiconductor memory device
    • 非易失性半导体存储器件
    • US5932909A
    • 1999-08-03
    • US851536
    • 1997-05-05
    • Masataka KatoTetsuo AdachiHitoshi KumeShoji Shukuri
    • Masataka KatoTetsuo AdachiHitoshi KumeShoji Shukuri
    • H01L21/8247H01L27/115H01L29/788H01L29/792
    • H01L27/11521Y10S257/90
    • A method of manufacturing a nonvolatile semiconductor memory device which is protected against deterioration in the electron injection/discharge characteristics between a floating gate of a memory cell and a channel. Three layers including a gate oxide film, a first polysilicon layer and a first nitride film are sequentially deposited on a silicon substrate surface and patterned with stripe-like columnwise lines. A second nitride film is formed on side walls of the columnwise lines, respectively. An element isolating insulation film is formed on the silicon substrate surface which is not covered with the first and second nitride films. After removal of the first and second nitride films, a first insulation film is formed on the side walls of the first polysilicon layer. Subsequently, at least two layers including a second insulation film and a second polysilicon layer are deposited and a pattern of rowwise lines extending orthogonally to the columnwise lines are formed by processing correspondingly the second polysilicon layer. Even after formation of the element isolating insulation film, thickening of the gate oxide film at distal portions thereof can be suppressed, whereby variations and deterioration in the characteristic of electron injection based on hot electron and tunnel phenomena can be minimized.
    • 一种制造非易失性半导体存储器件的方法,其被保护以防止存储单元的浮置栅极和沟道之间的电子注入/放电特性的劣化。 在硅衬底表面上依次沉积包括栅极氧化膜,第一多晶硅层和第一氮化物膜的三个层,并用条纹状的列线进行图案化。 分别在柱状线的侧壁上形成第二氮化物膜。 在未被第一和第二氮化物膜覆盖的硅衬底表面上形成元件隔离绝缘膜。 在去除第一和第二氮化物膜之后,在第一多晶硅层的侧壁上形成第一绝缘膜。 随后,沉积包括第二绝缘膜和第二多晶硅层的至少两层,并且通过相应地处理第二多晶硅层来形成与柱状线垂直延伸的横线的图案。 即使在形成元件隔离绝缘膜之后,也可以抑制其远端部分的栅极氧化膜的增厚,从而可以使基于热电子和隧道现象的电子注入特性的变化和劣化最小化。
    • 92. 发明授权
    • Non-volatile memory programming at arbitrary timing based on current
requirements
    • 基于当前要求的任意定时的非易失性存储器编程
    • US5422856A
    • 1995-06-06
    • US203303
    • 1994-03-01
    • Toshio SasakiToshihiro TanakaMasataka Kato
    • Toshio SasakiToshihiro TanakaMasataka Kato
    • G06F12/06G06F12/00G11C16/02G11C16/10G11C17/00G11C8/00
    • G11C16/102
    • To effect erase and program operations, i.e., rewrite of the non-volatile memory device efficiently with small electric power consumption and at high speed, a plurality of memory blocks that have a plurality of sectors and that each include a plurality of non-volatile memory cells are connected to buffer memories having at least the same memory capacity as a sector, and a read/write circuit generates internal addresses and timing for selecting sectors according to the external address and timing signals to control the read-out and rewrite of data between the sectors corresponding to the internal addresses and the buffer memories corresponding to the sectors, wherein the read/write circuit selects the sectors at timings shifted from one another and erases or programs the data in the selected sector in order to rewrite the data.
    • 为了实现擦除和编程操作,即以小功耗和高速度有效地重写非易失性存储器件,具有多个扇区的多个存储器块,并且每个存储块中的每一个包括多个非易失性存储器 单元被连接到具有至少与扇区相同的存储容量的缓冲存储器,并且读/写电路根据外部地址和定时信号产生用于选择扇区的内部地址和定时,以控制数据的读出和重写 对应于内部地址的扇区和对应于扇区的缓冲存储器,其中读/写电路在彼此偏移的定时中选择扇区,并擦除或编程所选扇区中的数据,以重写数据。