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91. 发明申请

US20080290274A1 DEFECT REVIEW METHOD AND DEVICE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：缺陷检查方法和半导体器件的器件
公开(公告)号：US20080290274A1
公开(公告)日：2008-11-27
申请号：US12033470
申请日：2008-02-19
申请人： Toshifumi Honda
发明人： Toshifumi Honda
IPC分类号： G01N23/04
CPC分类号： H01J37/28 , G01N2223/6116 , G06T7/0006 , G06T2207/10056 , G06T2207/30148 , H01J37/265 , H01J2237/2817
摘要： A defect review method and device of the invention solves the previous problem of a long inspection time that is caused by the increase of a process-margin-narrow pattern as a result of the size reduction of a semiconductor device. With the method and device of the invention, an SEM (Scanning Electron Microscope) image is derived by capturing an image of a process-margin-narrow pattern portion extracted based on lithography simulation with image-capturing conditions of a relatively low resolution. The resulting SEM image is compared with CAD (Computer Aided Design) data for extraction of any abnormal section. An image of the area extracted as being abnormal is captured again, and the resulting high-resolution SEM image is compared again with the CAD data for defect classification based on the feature amount of the image, e.g., shape deformation. The abnormal section is then measured in dimension at a position preset for the classification result so that the time taken for inspection can be prevented from increasing.
摘要翻译：本发明的缺陷评价方法和装置解决了由于半导体器件的尺寸减小导致的工艺边缘窄度图案的增加而导致的长检查时间的先前问题。利用本发明的方法和装置，通过捕获基于光刻模拟提取的处理边缘窄图案部分的图像，以相对低分辨率的图像捕获条件来导出SEM（扫描电子显微镜）图像。将所得SEM图像与CAD（计算机辅助设计）数据进行比较，以提取任何异常部分。再次捕获提取为异常的区域的图像，并且基于图像的特征量（例如形状变形）将所得到的高分辨率SEM图像再次与用于缺陷分类的CAD数据进行比较。然后在为分类结果预设的位置处的尺寸上测量异常部分，使得可以防止检查所花费的时间增加。

92. 发明申请

US20080073524A1 METHOD AND APPARATUS FOR REVIEWING DEFECTS 有权
标题翻译：评估缺陷的方法和装置
公开(公告)号：US20080073524A1
公开(公告)日：2008-03-27
申请号：US11668510
申请日：2007-01-30
申请人： Hidetoshi Nishiyama , Toshifumi Honda , Sachio Uto
发明人： Hidetoshi Nishiyama , Toshifumi Honda , Sachio Uto
IPC分类号： G01N23/00
CPC分类号： G01N23/225 , G02B15/14 , G02B21/0016 , H01J37/226 , H01J37/28 , H01J2237/216 , H01J2237/2482 , H01J2237/2817 , H01K3/02
摘要： A method and an apparatus for reviewing defects detected by an optical particle inspection system or an optical profile inspection system in detail by an electron microscope are provided. In order to putting defects to be reviewed in the viewing field of the electron microscope and reducing the size of the apparatus, the electron microscope reviews defects detected by an optical defect inspection system. In the electron microscope, an optical microscope for reviewing detects is arranged, and when focusing of this optical microscope is carried out, the illumination position and the detection position of the optical microscope are not changed to the sample.
摘要翻译：提供了一种用于通过电子显微镜详细检查由光学粒子检查系统或光学轮廓检查系统检测到的缺陷的方法和装置。为了在电子显微镜的观察区域中提供缺陷以及减小设备的尺寸，电子显微镜检查由光学缺陷检查系统检测到的缺陷。在电子显微镜中，设置检查用光学显微镜，当进行该光学显微镜的聚焦时，光学显微镜的照明位置和检测位置不变为样品。

93. 发明申请

US20070222464A1 Method and apparatus for reviewing defects by detecting images having voltage contrast 有权
标题翻译：通过检测具有电压对比度的图像来检查缺陷的方法和装置
公开(公告)号：US20070222464A1
公开(公告)日：2007-09-27
申请号：US11704228
申请日：2007-02-09
申请人： Toshifumi Honda , Takehiro Hirai
发明人： Toshifumi Honda , Takehiro Hirai
IPC分类号： G01R31/305
CPC分类号： G01R31/307 , G01R31/2884 , H01J37/265 , H01J37/28 , H01J37/304 , H01J2237/221 , H01J2237/24564 , H01J2237/2487 , H01J2237/2594 , H01J2237/2817 , H01J2237/30416
摘要： In a traditional method for automatically obtaining high-magnification images of defects by using an electron microscope for defect-reviewing of a semiconductor wafer, high-magnification images of a voltage contrast changing part are obtained in the case of defects generating voltage contrast change, this made difficult to observe defects themselves generating voltage contrast change. In the present invention, based on energy of secondary electron to be detected, after obtaining two types of images, namely an image making voltage contrast conspicuous easily, and an image not making it easily, and acquiring a shape change area adjacent to a voltage contrast change area based on this area as a defect location, a high-magnification image can automatically be obtained.
摘要翻译：在通过使用电子显微镜自动获得高倍率图像的传统方法中，通过使用电子显微镜对半导体晶片进行缺陷检查，在产生电压对比度变化的缺陷的情况下，获得电压对比度变化部分的高倍率图像，难以观察缺陷本身产生电压对比度变化。在本发明中，基于被检测的二次电子的能量，在获得两种类型的图像之后，即容易形成明显的图像形成电压对比度，以及不容易进行图像的图像，并且获取与电压对比相邻的形状变化区域基于该区域的变化区域作为缺陷位置，可以自动获得高倍率图像。

94. 发明申请

US20070201739A1 Method and apparatus for reviewing defects 有权
标题翻译：检查缺陷的方法和装置
公开(公告)号：US20070201739A1
公开(公告)日：2007-08-30
申请号：US11704350
申请日：2007-02-09
申请人： Ryo Nakagaki , Masaki Kurihara , Toshifumi Honda
发明人： Ryo Nakagaki , Masaki Kurihara , Toshifumi Honda
IPC分类号： G06K9/00
CPC分类号： G06T7/0006 , G06K9/6256 , G06T7/0004 , G06T7/001 , G06T2207/10056 , G06T2207/10061 , G06T2207/30148
摘要： In apparatuses for automatically acquiring and also for automatically classifying images of defects present on a sample such as a semiconductor wafer, a classifying system is provided which are capable of readily accepting even such a case that a large number of classification classes are produced based upon a request issued by a user, and also even such a case that a basis of the classification class is changed in a high frequency. When the user defines the classification classes, a device for designating attributes owned by the respective classification classes is provided. The classifying system automatically changes a connecting mode between an internally-provided rule-based classifier and an example-based classifier, so that such a classifying system which is fitted to the classification basis of the user is automatically constructed.
摘要翻译：在用于自动获取并且还自动分类诸如半导体晶片的样本上存在的缺陷的图像的设备中，提供了能够容易地接受甚至基于以下情况产生大量分类等级的情况的分类系统由用户发出的请求，甚至是分类等级的基础被高频地改变的情况。当用户定义分类类时，提供用于指定由各个分级类所拥有的属性的设备。分类系统自动地在内部提供的基于规则的分类器和基于示例的分类器之间改变连接模式，从而自动构建适合用户分类基础的这样的分类系统。

95. 发明授权

US07205555B2 Defect inspection apparatus and defect inspection method 有权
标题翻译：缺陷检查装置和缺陷检查方法
公开(公告)号：US07205555B2
公开(公告)日：2007-04-17
申请号：US11042021
申请日：2005-01-24
申请人： Hirohito Okuda , Yuji Takagi , Toshifumi Honda
发明人： Hirohito Okuda , Yuji Takagi , Toshifumi Honda
IPC分类号： H01J37/153 , G01N23/00 , G21K7/00
CPC分类号： G06T7/0004 , G01N23/225
摘要： An apparatus and a method for automatically inspecting a defect by an electron beam using an X-ray detector. The composition of a defective portion is analyzed with higher rapidity and the cause of the defect is easily and accurately determined based on an X-ray spectrum. The X-ray spectrum and the image of foreign particles formed on a process QC wafer are registered as reference data, and the defects generated on a process wafer are classified by collation with the reference data. The use of both the X-ray spectrum and the detected image optimizes the operating conditions for X-ray detection. A defect of which the X ray is to be detected is selected based on the result of classification of defect images automatically collected, and the defect is classified according to the features including both the composition and the external appearance.
摘要翻译：使用X射线检测器通过电子束自动检查缺陷的装置和方法。以更高的速度分析缺陷部分的组成，并且基于X射线光谱容易且准确地确定缺陷的原因。将X射线光谱和在过程QC晶片上形成的异物的图像作为参考数据进行登记，并且通过与参考数据进行核对对在处理晶片上产生的缺陷进行分类。使用X射线光谱和检测到的图像优化用于X射线检测的操作条件。基于自动收集的缺陷图像的分类结果来选择要检测X射线的缺陷，并且根据包括组成和外观的特征对缺陷进行分类。

96. 发明申请

US20070031026A1 Method and apparatus for reviewing defects of semiconductor device 有权
标题翻译：检查半导体器件缺陷的方法和装置
公开(公告)号：US20070031026A1
公开(公告)日：2007-02-08
申请号：US11488636
申请日：2006-07-19
申请人： Masaki Kurihara , Toshifumi Honda , Ryo Nakagaki
发明人： Masaki Kurihara , Toshifumi Honda , Ryo Nakagaki
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817
摘要： A method and apparatus for reviewing defects of a semiconductor device is provided which involves detecting a defect on a SEM image taken at low magnification, and reviewing the defect on a SEM image taken at high magnification, and which can review a lot of defects in a short period of time thereby to improve the efficiency of defect review. In the present invention, the method for reviewing defects of a semiconductor device includes the steps of obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.
摘要翻译：提供了一种用于检查半导体器件缺陷的方法和装置，其涉及检测在低放大倍率下拍摄的SEM图像上的缺陷，并且以高倍放大倍数检查SEM图像上的缺陷，并且可以检查在短时间内可以提高缺陷检查的效率。在本发明中，用于检查半导体器件的缺陷的方法包括以下步骤：通过使用扫描电子显微镜以第一放大率获得由检测装置检测的半导体器件上的缺陷的图像，从而所述图像包括在第一放大处获得的缺陷，通过将包括在第一放大获得的缺陷的图像与由包含第一放大率的缺陷构成的图像进行比较的图像进行比较来检测缺陷，并且获取检测到的缺陷的图像在大于第一放大率的第二放大倍率下。

97. 发明授权

US07170593B2 Method of reviewing detected defects 有权
标题翻译：检查检测到的缺陷的方法
公开(公告)号：US07170593B2
公开(公告)日：2007-01-30
申请号：US11248697
申请日：2005-10-11
申请人： Toshifumi Honda , Yuji Takagi , Hirohito Okuda
发明人： Toshifumi Honda , Yuji Takagi , Hirohito Okuda
IPC分类号： G01N21/00 , G21K7/00
CPC分类号： G01N21/9501 , G01N21/956
摘要： A method to solve the problem of a technique generally used to detect a defect of a semiconductor by calculating the differential image based on pattern matching, which requires that a reference image must be picked up to pick up an image of the inspection position in an area with the semiconductor pattern having no periodicity, resulting in a low throughput. The image of the inspection position is divided into local areas, each local area is matched with the local area of the image already stored and the difference between the local areas thus matched is determined to extract a defect area.
摘要翻译：一种解决通常用于通过基于图案匹配计算差分图像来检测半导体缺陷的技术的问题的方法，其要求必须拾取参考图像以在区域中拾取检查位置的图像半导体图案没有周期性，导致低的生产量。检查位置的图像被划分为局部区域，每个局部区域与已经存储的图像的局部区域匹配，并且确定如此匹配的局部区域之间的差异来提取缺陷区域。

98. 发明授权

US06965429B2 Method of reviewing detected defects 有权
标题翻译：检查检测到的缺陷的方法
公开(公告)号：US06965429B2
公开(公告)日：2005-11-15
申请号：US10224087
申请日：2002-08-19
申请人： Toshifumi Honda , Yuji Takagi , Hirohito Okuda
发明人： Toshifumi Honda , Yuji Takagi , Hirohito Okuda
IPC分类号： G01B11/30 , G01N21/95 , G01N21/956 , G06T1/00 , H01L21/66 , G01N21/00
CPC分类号： G01N21/9501 , G01N21/956
摘要： A method to solve the problem of a technique generally used to detect a defect of a semiconductor by calculating the differential image based on pattern matching, which requires that a reference image must be picked up to pick up an image of the inspection position in an area with the semiconductor pattern having no periodicity, resulting in a low throughput. The image of the inspection position is divided into local areas, each local area is matched with the local area of the image already stored and the difference between the local areas thus matched is determined to extract area.
摘要翻译：一种解决通常用于通过基于图案匹配计算差分图像来检测半导体缺陷的技术的问题的方法，其要求必须拾取参考图像以在区域中拾取检查位置的图像半导体图案没有周期性，导致低的生产量。检查位置的图像被划分为局部区域，每个局部区域与已经存储的图像的局部区域匹配，并且确定如此匹配的局部区域之间的差异来提取区域。

99. 发明授权

US06855930B2 Defect inspection apparatus and defect inspection method 有权
标题翻译：缺陷检查装置和缺陷检查方法
公开(公告)号：US06855930B2
公开(公告)日：2005-02-15
申请号：US10256585
申请日：2002-09-27
申请人： Hirohito Okuda , Yuji Takagi , Toshifumi Honda
发明人： Hirohito Okuda , Yuji Takagi , Toshifumi Honda
IPC分类号： G01N23/225 , G06T1/00 , H01L21/66 , G01N23/00
CPC分类号： G06T7/0004 , G01N23/225
摘要： An apparatus and a method for automatically inspecting a defect by an electron beam using an X-ray detector. The composition of a defective portion is analyzed with higher rapidity and the cause of the defect is easily and accurately determined based on an X-ray spectrum. The X-ray spectrum and the image of foreign particles formed on a process QC wafer are registered as reference data, and the defects generated on a process wafer are classified by collation with the reference data. The use of both the X-ray spectrum and the detected image optimizes the operating conditions for X-ray detection. A defect of which the X ray is to be detected is selected based on the result of classification of defect images automatically collected, and the defect is classified according to the features including both the composition and the external appearance.
摘要翻译：使用X射线检测器通过电子束自动检查缺陷的装置和方法。以更高的速度分析缺陷部分的组成，并且基于X射线光谱容易且准确地确定缺陷的原因。将X射线光谱和在过程QC晶片上形成的异物的图像作为参考数据进行登记，并且通过与参考数据进行核对对在处理晶片上产生的缺陷进行分类。使用X射线光谱和检测到的图像优化用于X射线检测的操作条件。基于自动收集的缺陷图像的分类结果来选择要检测X射线的缺陷，并且根据包括组成和外观的特征对缺陷进行分类。

100. 发明授权

US06622054B1 Method monitoring a quality of electronic circuits and its manufacturing condition and system for it 失效
标题翻译：监控电子电路质量的方法及其制造条件和系统
公开(公告)号：US06622054B1
公开(公告)日：2003-09-16
申请号：US09413468
申请日：1999-10-06
申请人： Hirohito Okuda , Toshifumi Honda , Hisae Yamamura , Yuji Takagi , Hideaki Doi , Shigeshi Yoshinaga
发明人： Hirohito Okuda , Toshifumi Honda , Hisae Yamamura , Yuji Takagi , Hideaki Doi , Shigeshi Yoshinaga
IPC分类号： G05B1302
CPC分类号： G05B19/41875 , G05B23/0216 , G05B23/024 , G05B2219/37572 , G05B2219/45029 , H05K1/0269 , H05K3/0005 , H05K3/3484 , Y02P90/04 , Y02P90/22
摘要： With a view to providing a monitoring system for the quality and manufacturing conditions of electronic circuits capable of facilitating the grasping of correlation's between diverse manufacturing conditions and manufacturing states, statistically characteristic images are selected out of a group of images retrieved from a detection information database by specifying at least one out of the values of feature quantities, design information and manufacturing conditions, and are displayed.
摘要翻译：为了提供电子电路的质量和制造条件的监测系统，能够便于掌握不同的制造条件和制造状态之间的相关性，从通过检测信息数据库检索的一组图像中选出统计特征图像指定特征量，设计信息和制造条件的值中的至少一个，并且被显示。

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