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91. 发明申请

US20130130464A1 PLASMA PROCESSING OF METAL OXIDE FILMS FOR RESISTIVE MEMORY DEVICE APPLICATIONS 有权
标题翻译：用于电阻式存储器件应用的金属氧化物膜的等离子体处理
公开(公告)号：US20130130464A1
公开(公告)日：2013-05-23
申请号：US13302777
申请日：2011-11-22
申请人： Albert Lee , Chi-I Lang
发明人： Albert Lee , Chi-I Lang
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , H01L27/2409 , H01L45/08 , H01L45/146
摘要： In some embodiments, the present invention discloses plasma processing at interfaces of an ALD metal oxide film with top and bottom electrodes to improve the ReRAM device characteristics. The interface processing can comprise an oxygen inhibitor step with a bottom polysilicon electrode to prevent oxidation of the polysilicon layer, enhancing the electrical contact of the metal oxide film with the polysilicon electrode. The interface processing can comprise an oxygen enrichment step with a top metal electrode to increase the resistivity of the metal oxide layer, providing an integrated current limiter layer.
摘要翻译：在一些实施例中，本发明公开了在ALD金属氧化物膜与顶部和底部电极的界面处的等离子体处理，以改善ReRAM器件的特性。界面处理可以包括具有底部多晶硅电极的氧抑制剂步骤，以防止多晶硅层氧化，增强金属氧化物膜与多晶硅电极的电接触。界面处理可以包括具有顶部金属电极的富氧步骤以增加金属氧化物层的电阻率，从而提供集成的限流器层。

92. 发明授权

US08298837B2 System and method for increasing productivity of organic light emitting diode material screening 有权
标题翻译：提高有机发光二极管材料筛选生产率的系统和方法
公开(公告)号：US08298837B2
公开(公告)日：2012-10-30
申请号：US13072083
申请日：2011-03-25
申请人： Yun Wang , Tony P. Chiang , Chi-I Lang
发明人： Yun Wang , Tony P. Chiang , Chi-I Lang
IPC分类号： H01L21/00
CPC分类号： H01L51/0031 , H01L51/56
摘要： A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.
摘要翻译：提高OLED材料筛选的生产率的系统和方法包括提供包括有机半导体的衬底，通过组合地改变与衬底上的OLED器件生产相关的参数来在衬底上处理区域，对处理的区域进行第一表征测试所述衬底产生第一结果，基于所述第一表征测试的第一结果，通过改变与所述衬底上的OLED器件生产相关联的参数，以组合方式处理所述衬底上的区域，对所述衬底上的所述处理区域进行第二特性测试衬底以产生第二结果，以及基于第二结果确定衬底是否满足预定质量阈值。

93. 发明申请

US20120119768A1 Method and System of Improved Reliability Testing 有权
标题翻译：改进可靠性测试方法与系统
公开(公告)号：US20120119768A1
公开(公告)日：2012-05-17
申请号：US12948257
申请日：2010-11-17
申请人： Yun Wang , Tony P. Chiang , Ryan Clarke , Chi-I Lang , Yoram Schwarz
发明人： Yun Wang , Tony P. Chiang , Ryan Clarke , Chi-I Lang , Yoram Schwarz
IPC分类号： G01R31/3187 , H01L21/66
CPC分类号： H01L22/14
摘要： A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.
摘要翻译：改进的可靠性测试的方法和系统包括提供第一衬底和第二衬底，每个衬底仅包括第一金属化层; 通过组合地改变材料，单元过程和工艺顺序中的至少一个来处理第一衬底上的处理区域; 对所述第一基板上的所述经处理区域进行第一可靠性测试以产生第一结果; 基于第一可靠性测试的第一结果，通过改变材料，单元过程和过程序列中的至少一个来以组合的方式处理第二基板上的区域; 对所述第二基板上的所述经处理区域进行第二可靠性测试以产生第二结果; 以及基于所述第二结果来确定所述第一基板和所述第二基板是否满足预定质量阈值。

94. 发明申请

US20110279810A1 High Throughput Quantum Efficiency Combinatorial Characterization Tool and Method for Combinatorial Solar Test Substrates 失效
标题翻译：组合太阳能测试基板的高通量量子效率组合表征工具和方法
公开(公告)号：US20110279810A1
公开(公告)日：2011-11-17
申请号：US12952855
申请日：2010-11-23
申请人： Yun Wang , Tony P. Chiang , Chi-I Lang
发明人： Yun Wang , Tony P. Chiang , Chi-I Lang
IPC分类号： G01N21/00
CPC分类号： G01R31/26 , G01N21/55 , G01R31/2607 , H02S50/10
摘要： Simultaneous measurement of an internal quantum efficiency and an external quantum efficiency of a solar cell using an emitter that emits light; a three-way beam splitter that splits the light into solar cell light and reference light, wherein the solar cell light strikes the solar cell; a reference detector that detects the reference light; a reflectance detector that detects reflectance light, wherein the reflectance light comprises a portion of the solar cell light reflected off the solar cell; a source meter operatively coupled to the solar cell; a multiplexer operatively coupled to the solar cell, the reference detector, and the reflectance detector; and a computing device that simultaneously computes the internal quantum efficiency and the external quantum efficiency of the solar cell.
摘要翻译：使用发射光的同时测量太阳能电池的内部量子效率和外部量子效率; 三光束分离器，其将光分解成太阳能电池光和参考光，其中太阳能电池光照射到太阳能电池; 检测参考光的参考检测器; 反射光检测器，其检测反射光，其中所述反射光包括从太阳能电池反射的太阳能电池光的一部分; 可操作地耦合到太阳能电池的源计量器; 可操作地耦合到太阳能电池，参考检测器和反射检测器的多路复用器; 以及同时计算太阳能电池的内部量子效率和外部量子效率的计算装置。

95. 发明申请

US20110244690A1 COMBINATORIAL PLASMA ENHANCED DEPOSITION AND ETCH TECHNIQUES 有权
标题翻译：组合等离子体增强沉积和蚀刻技术
公开(公告)号：US20110244690A1
公开(公告)日：2011-10-06
申请号：US12963995
申请日：2010-12-09
申请人： Sunil Shanker , Tony P. Chiang , Chi-I Lang
发明人： Sunil Shanker , Tony P. Chiang , Chi-I Lang
IPC分类号： H01L21/311 , H01L21/02
CPC分类号： H01L21/02274 , C23C16/0227 , C23C16/44 , C23C16/45523 , C23C16/45525 , C23C16/45536 , C23C16/45548 , C23C16/45565 , C23C16/45574 , C23C16/4586 , C23C16/509 , C23C16/5096 , H01J37/32091 , H01J37/3244 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32779 , H01L21/3065 , H01L21/67069
摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.
摘要翻译：根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于所述至少两个电极。

96. 发明授权

US07915139B1 CVD flowable gap fill 有权
标题翻译： CVD可流动缝隙填充
公开(公告)号：US07915139B1
公开(公告)日：2011-03-29
申请号：US12508461
申请日：2009-07-23
申请人： Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/00
CPC分类号： H01L21/76837 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/0234 , H01L21/31612 , H01L21/76826
摘要： The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.
摘要翻译：本发明通过提供填充间隙的改进方法来满足这些需要。在某些实施方案中，所述方法包括将基材置于反应室中并将气相含硅化合物和氧化剂引入所述室中。控制反应器条件使得含硅化合物和氧化剂反应并冷凝到基底上。化学反应导致形成可流动的膜，在某些情况下，含有Si-OH，Si-H和Si-O键。可流动膜填充基板上的间隙。然后将可流动膜转化成氧化硅膜，例如通过等离子体或热退火。本发明的方法可用于填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

97. 发明申请

US20090124081A1 Techniques to Improve Characteristics of Processed Semiconductor Substrates 有权
标题翻译：提高加工半导体基板特性的技术
公开(公告)号：US20090124081A1
公开(公告)日：2009-05-14
申请号：US12268387
申请日：2008-11-10
申请人： Anh Ngoc Duong , Chi-I Lang
发明人： Anh Ngoc Duong , Chi-I Lang
IPC分类号： H01L21/3205
CPC分类号： H01L21/288 , H01L21/02074 , H01L21/7684 , H01L21/76849
摘要： Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.
摘要翻译：描述了改进处理的半导体衬底的特性的技术，包括使用预清洗工艺清洗衬底，所述衬底包括电介质区域和导电区域，在使用预清洗操作清洁衬底之后，将氢醌引入衬底，并形成封盖在引入氢醌之后，在衬底的导电区域上方。

98. 发明授权

US07524735B1 Flowable film dielectric gap fill process 有权
标题翻译：可流动薄膜电介质间隙填充工艺
公开(公告)号：US07524735B1
公开(公告)日：2009-04-28
申请号：US11447594
申请日：2006-06-05
申请人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
发明人： Vishal Gauri , Raashina Humayun , Chi-I Lang , Judy H. Huang , Michael Barnes , Sunil Shanker
IPC分类号： H01L21/762
CPC分类号： H01L21/31 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/0234 , H01L21/3121 , H01L21/3122 , H01L21/31608 , H01L21/76224
摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.
摘要翻译：本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。可流动膜提供一致的，无空隙的间隙填充。然后将膜转化成固体电介质材料。以这种方式，用固体电介质材料填充衬底上的间隙。根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

99. 发明申请

US20090053902A1 LOW DIELECTRIC (LOW K) BARRIER FILMS WITH OXYGEN DOPING BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) 有权
标题翻译：通过等离子体增强化学气相沉积（PECVD）的氧气低压低介电（低K）阻挡膜
公开(公告)号：US20090053902A1
公开(公告)日：2009-02-26
申请号：US12255644
申请日：2008-10-21
申请人： Kang Sub Yim , Melissa M. Tam , Dian Sugiarto , Chi-I Lang , Peter Wai-Man Lee , Li-Qun Xia
发明人： Kang Sub Yim , Melissa M. Tam , Dian Sugiarto , Chi-I Lang , Peter Wai-Man Lee , Li-Qun Xia
IPC分类号： H01L21/31
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/325 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/3148 , H01L21/31633 , H01L21/3185 , H01L21/76807 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.
摘要翻译：提供了用于沉积具有显着降低的电流泄漏的碳化硅层的方法。碳化硅层可以是还包括阻挡层的阻挡层或阻挡层双层的一部分。还提供了沉积氧掺杂的碳化硅阻挡层的方法。可以通过使包含有机硅化合物，包含碳 - 碳双键或碳 - 碳三键的脂族烃和任选地在等离子体中的氦气的气体混合物反应来沉积碳化硅层。或者，可以通过在等离子体中使包含氢或氩的气体混合物和有机硅化合物反应来沉积碳化硅层。

100. 发明授权

US07476621B1 Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill 有权
标题翻译：无沉积惰性气体辅助H2等离子体蚀刻工艺在沉积蚀刻沉积间隙填充
公开(公告)号：US07476621B1
公开(公告)日：2009-01-13
申请号：US11366220
申请日：2006-03-01
申请人： Minh Anh Nguyen , Chi-I Lang , Wenxian Zhu , Judy H. Huang
发明人： Minh Anh Nguyen , Chi-I Lang , Wenxian Zhu , Judy H. Huang
IPC分类号： H01L21/311
CPC分类号： H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/31608 , H01L21/31612
摘要： Plasma etch processes incorporating H2/Noble gas etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen and one or more Noble gases as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.
摘要翻译：掺杂H2 / Noble气蚀刻化学物质的等离子体蚀刻工艺。特别地，高密度等离子体化学气相蚀刻增强（沉积 - 蚀刻 - 沉积）间隙填充工艺结合蚀刻化学，其结合氢气和一种或多种贵重气体作为蚀刻剂，其可以有效地填补高纵横比间隙，同时减少或消除介电污染通过蚀刻剂化学物种。

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