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1. 发明申请

US20120052694A1 TECHNIQUES TO IMPROVE CHARACTERISTICS OF PROCESSED SEMICONDUCTOR SUBSTRATES 有权
标题翻译：提高加工半导体基板特性的技术
公开(公告)号：US20120052694A1
公开(公告)日：2012-03-01
申请号：US13289279
申请日：2011-11-04
申请人： Anh Ngoc Duong , Chi-I Lang
发明人： Anh Ngoc Duong , Chi-I Lang
IPC分类号： H01L21/31
CPC分类号： H01L21/288 , H01L21/02074 , H01L21/7684 , H01L21/76849
摘要： Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.
摘要翻译：描述了改进处理的半导体衬底的特性的技术，包括使用预清洗工艺清洗衬底，所述衬底包括电介质区域和导电区域，在使用预清洗操作清洁衬底之后，将氢醌引入衬底，并形成封盖在引入氢醌之后，在衬底的导电区域上方。

2. 发明授权

US08252685B2 Techniques to improve characteristics of processed semiconductor substrates 有权
标题翻译：改善处理半导体衬底特性的技术
公开(公告)号：US08252685B2
公开(公告)日：2012-08-28
申请号：US13289279
申请日：2011-11-04
申请人： Anh Ngoc Duong , Chi-I Lang
发明人： Anh Ngoc Duong , Chi-I Lang
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L21/02074 , H01L21/7684 , H01L21/76849
摘要： Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.
摘要翻译：描述了改进处理的半导体衬底的特性的技术，包括使用预清洗工艺清洗衬底，所述衬底包括电介质区域和导电区域，在使用预清洗操作清洁衬底之后，将氢醌引入衬底，并形成封盖在引入氢醌之后，在衬底的导电区域上方。

3. 发明申请

US20090124081A1 Techniques to Improve Characteristics of Processed Semiconductor Substrates 有权
标题翻译：提高加工半导体基板特性的技术
公开(公告)号：US20090124081A1
公开(公告)日：2009-05-14
申请号：US12268387
申请日：2008-11-10
申请人： Anh Ngoc Duong , Chi-I Lang
发明人： Anh Ngoc Duong , Chi-I Lang
IPC分类号： H01L21/3205
CPC分类号： H01L21/288 , H01L21/02074 , H01L21/7684 , H01L21/76849
摘要： Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.
摘要翻译：描述了改进处理的半导体衬底的特性的技术，包括使用预清洗工艺清洗衬底，所述衬底包括电介质区域和导电区域，在使用预清洗操作清洁衬底之后，将氢醌引入衬底，并形成封盖在引入氢醌之后，在衬底的导电区域上方。

4. 发明申请

US20110017455A1 HYDROCARBON RECOVERY METHOD 有权
标题翻译：油气回收方法
公开(公告)号：US20110017455A1
公开(公告)日：2011-01-27
申请号：US12839118
申请日：2010-07-19
申请人： Anh Ngoc Duong
发明人： Anh Ngoc Duong
IPC分类号： E21B43/24
CPC分类号： E21B43/2406 , E21B43/305
摘要： A process for increasing the efficiency of hydrocarbon recovery from an underground formation containing viscous hydrocarbons through the use of both gravity drainage and mobile water drive. The process comprises a pair of vertically-spaced horizontal wells and a laterally offset horizontal well. A heated fluid is injected into the formation via a first well pair, and an adjacent horizontal well creates a pressure sink to draw the heated fluid laterally to assist growth of the formation drainage area for hydrocarbon recovery improvement. Injected fluids recovered from both producers are collected for recycling.
摘要翻译：一种通过使用重力排水和移动式水驱动，从含有粘性烃的地下地层提高烃回收效率的方法。该过程包括一对垂直间隔的水平井和横向偏移的水平井。加热的流体经由第一井对注入地层，并且相邻的水平井产生压力槽以横向拉动加热的流体，以帮助地层排水区域的生长以改善烃回收。从两个生产者回收的注入液体被收集用于回收利用。

5. 发明授权

US08833454B2 Hydrocarbon recovery method 有权
标题翻译：烃回收法
公开(公告)号：US08833454B2
公开(公告)日：2014-09-16
申请号：US12839118
申请日：2010-07-19
申请人： Anh Ngoc Duong
发明人： Anh Ngoc Duong
IPC分类号： E21B43/24 , E21B43/30
CPC分类号： E21B43/2406 , E21B43/305
摘要： A process for increasing the efficiency of hydrocarbon recovery from an underground formation containing viscous hydrocarbons through the use of both gravity drainage and mobile water drive. The process comprises a pair of vertically-spaced horizontal wells and a laterally offset horizontal well. A heated fluid is injected into the formation via a first well pair, and an adjacent horizontal well creates a pressure sink to draw the heated fluid laterally to assist growth of the formation drainage area for hydrocarbon recovery improvement. Injected fluids recovered from both producers are collected for recycling.
摘要翻译：一种通过使用重力排水和移动式水驱动，从含有粘性烃的地下地层提高烃回收效率的方法。该过程包括一对垂直间隔的水平井和横向偏移的水平井。加热的流体经由第一井对注入地层，并且相邻的水平井产生压力槽以横向拉动加热的流体，以帮助地层排水区域的生长以改善烃回收。从两个生产者回收的注入液体被收集用于回收利用。

6. 发明授权

US08076240B2 Techniques to improve characteristics of processed semiconductor substrates 有权
标题翻译：改善处理半导体衬底特性的技术
公开(公告)号：US08076240B2
公开(公告)日：2011-12-13
申请号：US12268387
申请日：2008-11-10
申请人： Anh Ngoc Duong , Chi-l Lang
发明人： Anh Ngoc Duong , Chi-l Lang
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L21/02074 , H01L21/7684 , H01L21/76849
摘要： Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.
摘要翻译：描述了改进处理的半导体衬底的特性的技术，包括使用预清洗工艺清洗衬底，所述衬底包括电介质区域和导电区域，在使用预清洗操作清洁衬底之后，将氢醌引入衬底，并形成封盖在引入氢醌之后，在衬底的导电区域上方。

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