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91. 发明授权

US07371693B2 Manufacturing method of semiconductor device with chamfering 有权
标题翻译：具有倒角的半导体器件的制造方法
公开(公告)号：US07371693B2
公开(公告)日：2008-05-13
申请号：US10784888
申请日：2004-02-24
申请人： Akira Suzuki , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
发明人： Akira Suzuki , Takashi Noma , Hiroyuki Shinogi , Yukihiro Takao , Shinzo Ishibe , Shigeki Otsuka , Keiichi Yamaguchi
IPC分类号： H01L21/461
CPC分类号： H01L21/78 , H01L23/3114 , H01L23/482 , H01L23/49827 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2224/274 , H01L2924/00014 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2224/05599 , H01L2224/05099
摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.
摘要翻译： CSP型半导体器件降低成本并提高可靠性。作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。然后蚀刻半导体晶片的第二表面以形成锥形槽。湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。

92. 发明授权

US07312521B2 Semiconductor device with holding member 有权
标题翻译：具有保持构件的半导体器件
公开(公告)号：US07312521B2
公开(公告)日：2007-12-25
申请号：US10420943
申请日：2003-04-23
申请人： Takashi Noma , Hiroyuki Shinogi , Nobuyuki Takai , Katsuhiko Kitagawa , Ryoji Tokushige , Takayasu Otagaki , Tatsuya Ando , Mitsuru Okigawa
发明人： Takashi Noma , Hiroyuki Shinogi , Nobuyuki Takai , Katsuhiko Kitagawa , Ryoji Tokushige , Takayasu Otagaki , Tatsuya Ando , Mitsuru Okigawa
IPC分类号： H01L23/48 , H01L23/12 , H01L29/70 , H01L31/02 , H01L23/04
CPC分类号： H01L24/10 , H01L23/3114 , H01L24/13 , H01L2224/05548 , H01L2224/05556 , H01L2224/05573 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00
摘要： Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.
摘要翻译：具有球形导电端子的BGA（球栅阵列）型半导体器件降低了成本并提高了可靠性。第一布线形成在形成在半导体管芯的表面上的绝缘膜上。在半导体管芯的表面上接合玻璃基板，半导体管芯的侧表面和背面被绝缘膜覆盖。第二布线连接到第一布线的侧表面或后表面并在半导体管芯的后表面上延伸。导电端子如凸块形成在第二布线上。

93. 发明授权

US07304463B2 DC-DC converter 有权
标题翻译： DC-DC转换器
公开(公告)号：US07304463B2
公开(公告)日：2007-12-04
申请号：US11115754
申请日：2005-04-27
申请人： Takashi Noma
发明人： Takashi Noma
IPC分类号： G05F1/618 , G05F1/575
CPC分类号： H02M3/1588 , Y02B70/1466
摘要： A DC-DC converter includes an Nch FET1 which is series connected between an input terminal and an output terminal, and an Nch FET2 which is connected between the output terminal side of the Nch FET1 and a ground terminal. On the output terminal side of the circuits, a smoothing circuit and a comparator circuit are connected. The output side of the comparator circuit is connected to an on-time limiter circuit, and the on-time limiter circuit is connected to an H/S driver circuit for controlling the Nch FET1 through an inverter and directly connected to an L/S driver circuit for controlling the Nch FET2. Here, when a switching control signal for turning on the Nch FET1 is input to the on-time limiter circuit from the comparator, the on-time limiter circuit detects a time in the on state and outputs a signal by which the Nch FET1 is temporarily off controlled.
摘要翻译： DC-DC转换器包括串联连接在输入端子和输出端子之间的Nch FET <1>和连接在输出端子侧之间的Nch FET <2> 的Nch FET 1＆lt; 1＆gt;和接地端子。在电路的输出端侧连接有平滑电路和比较电路。比较器电路的输出侧与导通时间限制电路连接，接通时间限制电路通过逆变器连接到H / S驱动电路，以控制Nch FET <1> 直接连接到用于控制Nch FET <2>的L / S驱动电路。这里，当用于接通Nch FET <1>的开关控制信号从比较器输入到接通时间限制器电路时，接通时间限制器电路检测处于导通状态的时间，并输出 Nch FET 1暂时关闭的信号被控制。

94. 发明授权

US07256073B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07256073B2
公开(公告)日：2007-08-14
申请号：US11492044
申请日：2006-07-25
申请人： Takashi Noma , Akira Suzuki , Hiroyuki Shinogi
发明人： Takashi Noma , Akira Suzuki , Hiroyuki Shinogi
IPC分类号： H01L21/00
CPC分类号： H01L24/02 , H01L21/76898 , H01L23/3114 , H01L25/0657 , H01L27/14806 , H01L2224/0401 , H01L2224/16 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06565 , H01L2924/01005 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/12042 , H01L2924/00
摘要： A stacked MCM is manufactured at reduced cost without using expensive apparatus. A first wiring and a second wiring are formed on a surface of a semiconductor chip of a first semiconductor device through an insulation film. A glass substrate having an opening to expose the second wiring is bonded to the surface of the semiconductor chip on which the first wiring and the second wiring are formed. A third wiring is disposed on a back surface and a side surface of the semiconductor chip through an insulation film and connected to the first wiring. And a conductive terminal of another semiconductor device is connected to the second wiring through the opening.
摘要翻译：在不使用昂贵的设备的情况下，以低成本制造堆叠MCM。通过绝缘膜在第一半导体器件的半导体芯片的表面上形成第一布线和第二布线。具有露出第二布线的开口的玻璃基板被接合到形成有第一布线和第二布线的半导体芯片的表面上。第三布线通过绝缘膜设置在半导体芯片的背面和侧面上并连接到第一布线。并且另一半导体器件的导电端子通过开口连接到第二布线。

95. 发明申请

US20070145590A1 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20070145590A1
公开(公告)日：2007-06-28
申请号：US11639411
申请日：2006-12-15
申请人： Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
发明人： Takashi Noma , Kazuo Okada , Shinzo Ishibe , Katsuhiko Kitagawa , Yuichi Morita , Shigeki Otsuka , Hiroshi Yamada , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
IPC分类号： H01L23/52
CPC分类号： H01L27/14618 , H01L27/14636 , H01L31/0203 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/10 , H01L2924/00014
摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.
摘要翻译：本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在半导体衬底。每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。

96. 发明申请

US20050285585A1 DC-DC converter 有权
标题翻译： DC-DC转换器
公开(公告)号：US20050285585A1
公开(公告)日：2005-12-29
申请号：US11115754
申请日：2005-04-27
申请人： Takashi Noma
发明人： Takashi Noma
IPC分类号： G05F1/40 , H02M3/158
CPC分类号： H02M3/1588 , Y02B70/1466
摘要： A DC-DC converter includes an Nch FET1 which is series connected between an input terminal and an output terminal, and an Nch FET2 which is connected between the output terminal side of the Nch FET1 and a ground terminal. On the output terminal side of the circuits, a smoothing circuit and a comparator circuit are connected. The output side of the comparator circuit is connected to an on-time limiter circuit, and the on-time limiter circuit is connected to an H/S driver circuit for controlling the Nch FET1 through an inverter and directly connected to an L/S driver circuit for controlling the Nch FET2. Here, when a switching control signal for turning on the Nch FET1 is input to the on-time limiter circuit from the comparator, the on-time limiter circuit detects a time in the on state and outputs a signal by which the Nch FET1 is temporarily off controlled.
摘要翻译： DC-DC转换器包括串联连接在输入端子和输出端子之间的Nch FET <1>和连接在输出端子侧之间的Nch FET <2> 的Nch FET 1＆lt; 1＆gt;和接地端子。在电路的输出端侧连接有平滑电路和比较电路。比较器电路的输出侧与导通时间限制电路连接，接通时间限制电路通过逆变器连接到H / S驱动电路，以控制Nch FET <1> 直接连接到用于控制Nch FET <2>的L / S驱动电路。这里，当用于接通Nch FET <1>的开关控制信号从比较器输入到接通时间限制器电路时，接通时间限制器电路检测处于导通状态的时间，并输出 Nch FET 1暂时关闭的信号被控制。

97. 发明授权

US6055029A Backlighting system for a liquid crystal display including an integrally molded light guiding plate and frame with a deformation absorbing means 失效
标题翻译：用于液晶显示器的背光系统，其包括具有变形吸收装置的整体模制的导光板和框架
公开(公告)号：US6055029A
公开(公告)日：2000-04-25
申请号：US898271
申请日：1997-07-22
申请人： Mikio Kurihara , Fumihisa Hanzawa , Yoji Oki , Kazushige Ohta , Takashi Noma , Hidiaki Sasaya , Tatsuo Fukui
发明人： Mikio Kurihara , Fumihisa Hanzawa , Yoji Oki , Kazushige Ohta , Takashi Noma , Hidiaki Sasaya , Tatsuo Fukui
IPC分类号： G02B6/00 , F21V8/00 , G02F1/13 , G02F1/1333 , G02F1/1335 , G02F1/13357
CPC分类号： G02B6/0093 , G02B6/0088 , G02F1/133615 , G02B6/0051 , G02F1/133308 , G02F2201/503 , G02F2201/54
摘要： Since a backlighting apparatus 1 for liquid crystal display is constituted such that a light guiding plate 2 and a frame 3 are molded together as a single unit provided with a deformation relaxation design, an attaching unit and parts, such as attaching feet and screws, for attaching the light guiding plate 2 to the frame 3 are not required, thereby making it possible to reduce the thickness and size of the backlighting apparatus 1 for liquid crystal display which has been restricted by the sizes of these parts.
摘要翻译：由于用于液晶显示器的背光装置1被构造成使得导光板2和框架3一起模制成具有变形松弛设计的单个单元，附接单元和诸如安装脚和螺钉的部件，用于不需要将导光板2安装到框架3，从而可以减小受这些部件的尺寸限制的液晶显示器的背光装置1的厚度和尺寸。

98. 发明授权

US5645462A Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device 失效
标题翻译：电子发射装置和电子束发生装置以及采用该装置的成象装置
公开(公告)号：US5645462A
公开(公告)日：1997-07-08
申请号：US590511
申请日：1996-01-24
申请人： Yoshikazu Banno , Ichiro Nomura , Hidetoshi Suzuki , Takashi Noma , Rie Ueno
发明人： Yoshikazu Banno , Ichiro Nomura , Hidetoshi Suzuki , Takashi Noma , Rie Ueno
IPC分类号： H01J1/30 , H01J1/316 , H01J9/02 , H01J29/04 , H01J31/12
CPC分类号： B82Y10/00 , H01J1/316 , H01J31/127 , H01J9/027 , H01J2201/3165 , H01J2329/00
摘要： An electron-emitting device having a electron-emitting portion between electrodes on a substrate comprises a region A and a region B, the region A being electrically connected through the region B to at least one of the electrodes, electric conductivity .sigma..sub.1 of the material mainly constituting the region A and electric conductivity of the material .sigma..sub.2 mainly constituting the region B being in the relation of .sigma..sub.1 >.sigma..sub.2, and the region A being the electron-emitting portion. An electron beam-generating apparatus and image-forming apparatus comprise the electron-emitting device and a modulation means for modulating the electron beams emitted from the electron-emitting elements in accordance with information signals.
摘要翻译：在基板上的电极之间具有电子发射部分的电子发射器件包括区域A和区域B，区域A通过区域B电连接到至少一个电极，材料的导电率σ1 主要构成主要构成与西格玛2的关系的区域B的材料sigma 2的区域A和电导率，区域A是电子发射部分。电子束发生装置和图像形成装置包括电子发射装置和用于根据信息信号调制从电子发射元件发射的电子束的调制装置。

99. 发明授权

US5622634A Method of manufacturing electron-emitting device, electron source and image-forming apparatus 失效
标题翻译：制造电子发射器件，电子源和图像形成装置的方法
公开(公告)号：US5622634A
公开(公告)日：1997-04-22
申请号：US358382
申请日：1994-12-19
申请人： Takashi Noma , Seijiro Kato , Fumio Kishi , Hisaaki Kawade , Toshikazu Ohnishi , Michiyo Nishimura , Kumiko Uno , Takahiro Horiguchi , Masato Yamanobe
发明人： Takashi Noma , Seijiro Kato , Fumio Kishi , Hisaaki Kawade , Toshikazu Ohnishi , Michiyo Nishimura , Kumiko Uno , Takahiro Horiguchi , Masato Yamanobe
IPC分类号： H01J9/02 , B44C1/22
CPC分类号： H01J9/027 , H01J2201/3165 , H01J2329/00
摘要： An electron-emitting device comprising a pair of device electrodes and an electroconductive film including an electron-emitting region is manufactured by a method comprising a process of forming an electroconductive film including steps of forming a pattern on a thin film containing a metal element on the basis of a difference of chemical state, and removing part of the thin film on the basis of the difference of chemical state.
摘要翻译：包括一对器件电极和包含电子发射区的导电膜的电子发射器件通过包括形成导电膜的方法制造，所述方法包括以下步骤：在包含金属元素的薄膜上形成图案基于化学状态的差异，并且基于化学状态的差异去除部分薄膜。

100. 发明授权

US4716215A Compression moldable aromatic polyamide powder 失效
标题翻译：压缩成型芳香族聚酰胺粉末
公开(公告)号：US4716215A
公开(公告)日：1987-12-29
申请号：US828237
申请日：1986-02-10
申请人： Hideo Matsui , Hiroshi Fujie , Takashi Noma
发明人： Hideo Matsui , Hiroshi Fujie , Takashi Noma
IPC分类号： B29C43/00 , B29C43/34 , C08J3/12 , C08G69/32
CPC分类号： C08J3/12 , B29C43/003 , B29C43/34 , C08J3/16 , B29C2791/006 , B29K2077/00 , B29K2105/12 , B29K2105/251 , B29K2277/00 , C08J2377/10 , Y10S264/61 , Y10S521/919
摘要： A new type of aromatic polyamide powder including a large number of fine coalescible paticles which have an average size of from 0.1 to 10 .mu.m, which include at least one aromatic amide polymer including 40 to 100 molar % of recurring m-phenylene isophthalamide units and 0 to 60 molar % of at least one other type of additional recurring aromatic amide units, for example, m-phenylene terephthalamide units, and which coalesce with each other to form porous agglomeraters having an average size of from 10 to 400 .mu.m and a surface area of from 1 to 20 m.sup.2 /g, and can be compression molded, optionally in mixture with a reinforcing additive, for example, aromatic polyamide fibers having a length of 3 mm or less, at a temperature of 200.degree. to 400.degree. C. under a pressure of 300 to 1000 kg/cm.sup.2 for 20 minutes to 5 hours, to produce shaped articles having excellent mechanical properties and appearance.
摘要翻译：一种新型的芳族聚酰胺粉末，其包括大量的平均粒径为0.1-10μm的精细可聚结粒子，其包括至少一种芳香族酰胺聚合物，其包含40-100摩尔％的间苯二甲酰间苯二胺单元和 0至60摩尔％的至少一种其它类型的另外的重复芳族酰胺单元，例如间苯二酰对苯二胺单元，并且彼此聚结以形成平均尺寸为10-400μm的多孔聚集体和表面积为1〜20m2 / g，可以在200〜400℃的温度下，与增强添加剂例如长度为3mm以下的芳香族聚酰胺纤维任意混合，在300〜1000kg / cm 2的压力下进行20分钟〜5小时，制造具有优异的机械特性和外观的成形制品。

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