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1. 发明专利

JP2004306402A Sheet related to assessment and care plan for care-receiver 审中-公开
公开(公告)号：JP2004306402A
公开(公告)日：2004-11-04
申请号：JP2003102500
申请日：2003-04-07
申请人： Atsuko Nakanishi , Michiyo Nishimura , Sayuri Suwa , Sukenori Watanabe , 敦子中西 , 祐紀渡邊 , 美智代西村 , さゆり諏訪
发明人： NAKANISHI ATSUKO , SUWA SAYURI , WATANABE SUKENORI , NISHIMURA MICHIYO
IPC分类号： B42D15/00
摘要： PROBLEM TO BE SOLVED: To make a care in which a care-receiver is placed at a center possible by objectively understanding a subjective intention of the care-receiver by a care-giver and participating in planning of an assessment and a care plan not only by the care-giver but also the care-receiver himself.
SOLUTION: A sheet related to the assessment and the care plan is composed of the first sheet 1 provided with at least a specified condition entry column 2, a human relation entry column 3, a physical condition displaying column 4 and a function entry column 5, the second sheet 6 provided with at least a history entry column 7, a request entry column 8, and a care-receiving entry column 11, the third sheet 16 provided with at least an understanding item entry column 17, the fourth sheet 18 provided with at least a necessary item entry column 20 and a care plan entry column 21, and the fifth sheet 22 provided with at least a care result entry column 23.
COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明申请

US20090153013A1 ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND METHOD FOR MANUFACTURING ELECTRON-EMITTING DEVICE 审中-公开
标题翻译：电子发射装置，电子源，图像显示装置和制造电子发射装置的方法
公开(公告)号：US20090153013A1
公开(公告)日：2009-06-18
申请号：US12331236
申请日：2008-12-09
申请人： Michiyo Nishimura , Ryoji Fujiwara , Yoji Teramoto , Kazushi Nomura , Shunsuke Murakami
发明人： Michiyo Nishimura , Ryoji Fujiwara , Yoji Teramoto , Kazushi Nomura , Shunsuke Murakami
IPC分类号： H01J1/02 , H01J9/02
CPC分类号： H01J1/30 , H01J9/022 , H01J31/127 , H01J2201/30 , H01J2329/0405
摘要： A method for manufacturing an electron-emitting device according to the present invention includes a step of preparing a carbon layer containing conductive metallic particles, a step of oxidizing a portion the conductive metallic particles, and a step of forming a dipole layer on a surface of the carbon layer. An electron-emitting device according to the present invention is manufactured by the manufacturing method for the electron-emitting device. An electron source according to the present invention includes a plurality of the electron-emitting devices. An image display apparatus according to the present invention includes the electron source and a image forming member which forms an image by an electron emitted from the electron source.
摘要翻译：根据本发明的制造电子发射器件的方法包括制备含有导电金属颗粒的碳层，氧化导电金属颗粒的一部分的步骤和在偶极子层的表面上形成偶极层的步骤碳层。根据本发明的电子发射器件通过电子发射器件的制造方法制造。根据本发明的电子源包括多个电子发射器件。根据本发明的图像显示装置包括电子源和通过从电子源发射的电子形成图像的图像形成部件。

3. 发明申请

US20090108727A1 ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND MANUFACTURING METHOD OF ELECTRON-EMITTING DEVICE 审中-公开
标题翻译：电子发射装置，电子源，图像显示装置和电子发射装置的制造方法
公开(公告)号：US20090108727A1
公开(公告)日：2009-04-30
申请号：US12255185
申请日：2008-10-21
申请人： Kazushi Nomura , Ryoji Fujiwara , Michiyo Nishimura , Yoji Teramoto , Shunsuke Murakami
发明人： Kazushi Nomura , Ryoji Fujiwara , Michiyo Nishimura , Yoji Teramoto , Shunsuke Murakami
IPC分类号： H01J1/00 , H01J9/02
CPC分类号： H01J31/127 , H01J29/467
摘要： An electron-emitting device according to the present invention is characterized by that a gate electrode is located above a cathode electrode; a insulating member is located between the gate electrode and the cathode electrode; and the gate electrode and the insulating member are provided with openings, respectively, the openings being communicated with each other, wherein the insulating member is formed by layering three or more insulating layers including a first insulating layer, which is brought in contact with the gate electrode and has an opening, of which size is approximately the same as the size of the opening of the gate electrode; and a second insulating layer, which is located nearer to the side of the cathode electrode than the first insulating layer and has a larger opening than the opening of the gate electrode.
摘要翻译：根据本发明的电子发射器件的特征在于栅电极位于阴极上方; 绝缘构件位于栅电极和阴极之间; 并且所述栅电极和所述绝缘构件分别设置有所述开口彼此连通的开口，其中所述绝缘构件通过层叠三个或更多个绝缘层而形成，所述绝缘层包括与所述栅极接触的第一绝缘层电极，其开口大小与栅电极的开口尺寸大致相同; 以及第二绝缘层，其位于比第一绝缘层更靠近阴极侧的并且具有比栅电极的开口大的开口。

4. 发明授权

US07405092B2 Method of manufacturing electron-emitting device and method of manufacturing image display apparatus 失效
标题翻译：制造电子发射器件的方法和制造图象显示装置的方法
公开(公告)号：US07405092B2
公开(公告)日：2008-07-29
申请号：US10885803
申请日：2004-07-08
申请人： Michiyo Nishimura
发明人： Michiyo Nishimura
IPC分类号： H01L21/00
CPC分类号： H01J1/316 , H01J9/027 , H01J2201/3165 , Y10S257/918
摘要： A method of manufacturing an electron-emitting device with a stable electrical characteristics without variation per each of the devices is provided, by forming, on a substrate, a cathode electrode, a carbon layer on the cathode electrode, and a gate electrode, disposing an anode electrode, and applying to the carbon layer a voltage higher than that at a driving of the electron-emitting device.
摘要翻译：通过在衬底上形成阴极电极，阴极电极上的碳层和栅极电极，制造具有每个器件的不变化的具有稳定的电特性的电子发射器件的方法，阳极电极，并且向碳层施加比在电子发射器件的驱动时更高的电压。

5. 发明授权

US06309272B1 Method of making an image forming apparatus 有权
标题翻译：制造图像形成装置的方法
公开(公告)号：US06309272B1
公开(公告)日：2001-10-30
申请号：US09213859
申请日：1998-12-17
申请人： Michiyo Nishimura
发明人： Michiyo Nishimura
IPC分类号： H01J925
CPC分类号： H01J9/261
摘要： A method for making an image forming apparatus includes an assembly of a first unit provided with an image-forming element and a second unit provided with electron emission devices. A bonding agent is provided at a bonding section of the first unit; the bonding agent is heated, and then the first unit and the second unit are bonded to each other. Alternatively, a bonding agent may be provided at a bonding section of the second unit; the bonding agent is heated, and then the electron emitting members of the electron emission devices are formed. After providing a bonding agent at a bonding section of the second unit, a spacer also may be provided between the bonding agent and the electron emission devices, and then the bonding agent may be heated. In addition, a bonding agent may be provided at a bonding section of the second unit, and then the bonding agent may be heated locally.
摘要翻译：一种用于制造图像形成装置的方法包括具有图像形成元件的第一单元和设置有电子发射装置的第二单元的组件。粘合剂设置在第一单元的接合部分处; 加热粘合剂，然后将第一单元和第二单元相互结合。或者，可以在第二单元的接合部处设置粘合剂; 加热粘合剂，然后形成电子发射器件的电子发射部件。在第二单元的接合部分提供接合剂之后，也可以在接合剂和电子发射器件之间设置间隔物，然后可以加热粘合剂。另外，也可以在第二单元的接合部设置接合剂，然后可以局部加热接合剂。

6. 发明授权

US06208071B1 Electron source substrate with low sodium upper surface 失效
标题翻译：具有低钠上表面的电子源基板
公开(公告)号：US06208071B1
公开(公告)日：2001-03-27
申请号：US08998429
申请日：1997-12-24
申请人： Michiyo Nishimura , Hisaaki Kawade , Kazuya Miyazaki
发明人： Michiyo Nishimura , Hisaaki Kawade , Kazuya Miyazaki
IPC分类号： H01J162
CPC分类号： C03C21/002 , C03C17/06 , H01J1/316
摘要： A sodium-containing glass substrate has a modified surface on which an electroconductive film is to be formed. The modified surface is constituted of a layer of which sodium concentration is lower than the bulk body of the glass substrate, preferably with a sodium content ratio to all the metal elements of not greater than 2 atomic percent. The modified surface may contain a reduced amount of sulfur as compared to the bulk body of the glass substrate.
摘要翻译：含钠玻璃基板具有在其上形成导电膜的改性表面。改性表面由钠浓度低于玻璃基体的本体的层构成，优选与所有金属元素的钠含量比不大于2原子％。与玻璃基板的本体相比，改性表面可含有减少量的硫。

7. 发明授权

US5550393A Semiconductor layer structure having distributed strain and optical semiconductor device including such strained layer 失效
标题翻译：具有分布应变的半导体层结构和包括这种应变层的光半导体器件
公开(公告)号：US5550393A
公开(公告)日：1996-08-27
申请号：US316451
申请日：1994-10-03
申请人： Michiyo Nishimura
发明人： Michiyo Nishimura
IPC分类号： G02F1/35 , B82Y20/00 , G02F1/355 , H01L29/205 , H01S5/00 , H01S5/32 , H01S5/34 , H01S5/343 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： B82Y20/00 , H01L29/205 , H01L33/0025 , H01S5/32 , H01S5/3201 , H01S5/3211 , H01S5/3409
摘要： A semiconductor layer structure comprises a first semiconductor layer, and a second semiconductor layer adjacent the first layer at a boundary. The first semiconductor layer has a uniform lattice constant in its layering direction. The second semiconductor layer has a distributed lattice constant varying in its layering direction. Each region of the second semiconductor layer is strained due to biaxial strain introduced by a difference in lattice constant between each region and the first semiconductor layer. The strain in the second semiconductor layer has a distribution such that no crystal defects occur in the second semiconductor layer when the second layer is thicker than a critical thickness defined by the maximum strain in the second layer. The strained semiconductor layer structure may be used as a light confinement layer in a semiconductor optical device.
摘要翻译：半导体层结构包括第一半导体层和在边界处与第一层相邻的第二半导体层。第一半导体层在层叠方向上具有均匀的晶格常数。第二半导体层具有在其分层方向上变化的分布晶格常数。由于在每个区域和第一半导体层之间的晶格常数差异引入的双轴应变，第二半导体层的每个区域变形。第二半导体层中的应变具有当第二层比由第二层中的最大应变限定的临界厚度厚时在第二半导体层中不会发生晶体缺陷的分布。应变半导体层结构可以用作半导体光学器件中的光限制层。

8. 发明授权

US5414549A Semiconductor optical amplifying apparatus 失效
标题翻译：半导体光放大装置
公开(公告)号：US5414549A
公开(公告)日：1995-05-09
申请号：US191180
申请日：1994-02-03
申请人： Michiyo Nishimura , Jun Nitta , Kenji Nakamura , Masao Majima , Toru Nakata
发明人： Michiyo Nishimura , Jun Nitta , Kenji Nakamura , Masao Majima , Toru Nakata
IPC分类号： G02F1/35 , B82Y10/00 , B82Y20/00 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/32 , H01S5/34 , H01S5/50 , H04B10/27 , H04B10/272 , H04B10/275 , H04B10/278 , H04B10/29 , H04B10/297 , H01S3/19 , G02B6/12 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/34 , H01S5/5009 , H04B10/2914 , H01S2301/14 , H01S5/3203
摘要： A semiconductor optical amplifying apparatus includes: a substrate; an active layer having a quantum well structure formed on the substrate, the active layer guiding first waveguide mode light and second waveguide mode light having a polarization direction perpendicular to that of the first waveguide mode light and amplifying the first waveguide mode light and the second waveguide mode light, the active layer having quantum wells such that projected quantization axes obtained by projecting quantization axes of the quantum wells thereof on a plane perpendicular to a light waveguide direction are inclined at 45.degree. with respect to vibration directions of electric field vectors of the first waveguide mode light and the second waveguide mode light; and an electrode for supplying a current to the active layer.
摘要翻译：一种半导体光放大装置，包括：基板; 具有形成在基板上的量子阱结构的有源层，有源层引导第一波导模式光和具有与第一波导模式光垂直的偏振方向的第二波导模式光，并且放大第一波导模式光和第二波导有源层具有量子阱，使得通过将量子阱的量子轴投影在垂直于光波导方向的平面上而获得的投影量化轴相对于第一像素的电场矢量的振动方向倾斜45度波导模式光和第二波导模式光; 以及用于向有源层提供电流的电极。

9. 发明授权

US5148302A Optical modulation element having two-dimensional phase type diffraction grating 失效
$Optical modulation element having two-dimensional phase type diffraction grating$
标题翻译：具有二维相位衍射光栅的光调制元件
公开(公告)号：US5148302A
公开(公告)日：1992-09-15
申请号：US771532
申请日：1991-10-07
申请人： Akihiko Nagano , Etsuro Kishi , Ryoji Fujiwara , Yukitoshi Ohkubo , Michiyo Nishimura , Hajime Sakata , Takayuki Ishii , Masato Yamanobe
发明人： Akihiko Nagano , Etsuro Kishi , Ryoji Fujiwara , Yukitoshi Ohkubo , Michiyo Nishimura , Hajime Sakata , Takayuki Ishii , Masato Yamanobe
IPC分类号： G02B5/18 , G02F1/1333 , G02F1/29
CPC分类号： G02F1/292 , G02B5/1828 , G02F1/133371 , G02F2201/305 , G02F2203/22
摘要： An optical modulation element characterized in that a two-dimensional phase type diffraction gratings, whose refractive index changes for each predetermined period along two different directions in a predetermined plane, is adopted, and a changing state of the refractive index is controlled to change characteristics of the diffraction grating, so that a diffraction phenomenon of light incident on the element is controlled.
摘要翻译：一种光调制元件，其特征在于，采用其在预定平面中沿着两个不同方向的折射率每个预定周期变化的二维相位衍射光栅，并且控制折射率的改变状态以改变衍射光栅，从而控制入射到元件上的光的衍射现象。

10. 发明授权

US4980895A Distributed feedback semiconductor laser having a laser-active layer serving as diffraction grating 失效
$Distributed feedback semiconductor laser having a laser-active layer serving as diffraction grating$
标题翻译：具有用作衍射光栅的激光有源层的分布式反馈半导体激光器
公开(公告)号：US4980895A
公开(公告)日：1990-12-25
申请号：US327099
申请日：1989-03-22
申请人： Michiyo Nishimura
发明人： Michiyo Nishimura
IPC分类号： H01S5/00 , H01S5/12
CPC分类号： H01S5/1228
摘要： A semiconductor laser which has a substrate, a laser-active layer formed on said substrate, at least a portion of said laser-active layer constituting a diffraction grating having a periodic refractive index distribution, and electrodes for supplying said laser-active layer with an electric current.
摘要翻译：一种半导体激光器，其具有基板，形成在所述基板上的激光有源层，所述激光有源层的至少一部分构成具有周期性折射率分布的衍射光栅，以及用于向所述激光器层提供电流。

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