专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20110124142A1 GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM 审中-公开
标题翻译： GAN半导体光学元件，制造GAN半导体光学元件的方法，外延晶体和用于生长GAN半导体膜的方法
公开(公告)号：US20110124142A1
公开(公告)日：2011-05-26
申请号：US13019067
申请日：2011-02-01
申请人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono , Takamichi Sumitomo , Takao Nakamura
发明人： Yohei Enya , Yusuke Yoshizumi , Masaki Ueno , Katsushi Akita , Takashi Kyono , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L33/04
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/16 , H01L33/32 , H01S5/34333
摘要： In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect to a reference axis “Cx” extending in a direction of a c-axis of the first GaN based semiconductor, and the tilting angle is 63 degrees or more, and is less than 80 degrees. The GaN based semiconductor epitaxial region 15 is provided on the primary surface 13a. On the GaN based semiconductor epitaxial region 15, an active layer 17 is provided. The active layer 17 includes one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The thickness direction of the semiconductor epitaxial layer 19 tilts with respect to the reference axis “Cx.” The reference axis “Cx” extends in the direction of the [0001] axis. This structure provides the GaN based semiconductor optical device that can reduces decrease in light emission characteristics due to the indium segregation.
摘要翻译：在GaN系半导体光学元件11a中，基板13的主表面13a相对于沿c方向延伸的基准轴“Cx”朝向第一GaN基半导体的m轴方向倾斜倾斜第一GaN基半导体的角度，倾斜角度为63度以上，小于80度。 GaN基半导体外延区域15设置在主表面13a上。在GaN基半导体外延区域15上，设置有源层17。有源层17包括一个半导体外延层19.半导体外延层19由InGaN构成。半导体外延层19的厚度方向相对于基准轴“Cx”倾斜。参考轴“Cx”沿[0001]轴的方向延伸。这种结构提供可以减少由于铟偏析导致的发光特性的降低的GaN基半导体光学器件。

92. 发明授权

US07851243B1 Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device 有权
标题翻译：基于氮化物的半导体光学器件，用于氮化物半导体光学器件的外延晶片，以及制造半导体发光器件的方法
公开(公告)号：US07851243B1
公开(公告)日：2010-12-14
申请号：US12852060
申请日：2010-08-06
申请人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
发明人： Masaki Ueno , Yohei Enya , Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L21/205
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.
摘要翻译：在基于氮化物的半导体光学器件LE1中，应变阱层21沿着从与c轴方向延伸的参考轴正交的平面以倾斜角α倾斜的参考平面SR1延伸。倾斜角α在大于59度至小于80度或大于150度至小于180度的范围内。氮化镓基半导体层P与具有负的压电场的发光层SP相邻，并且具有比阻挡层的带隙大的带隙。阱层W3中的压电场的方向指向从n型层到p型层的方向，并且氮化镓基半导体层P中的压电场指向从p型层的方向，类型层到n型层。因此，价带，而不是导带，在发光层SP-和氮化镓基半导体层P之间的界面处有下沉。

93. 发明授权

US07816238B2 GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate 失效
标题翻译： GaN衬底，具有外延层的衬底，半导体器件和制造GaN衬底的方法
公开(公告)号：US07816238B2
公开(公告)日：2010-10-19
申请号：US12137038
申请日：2008-06-11
申请人： Hideki Osada , Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Takashi Kyono , Katsushi Akita , Yoshiki Miura
发明人： Hideki Osada , Hitoshi Kasai , Keiji Ishibashi , Seiji Nakahata , Takashi Kyono , Katsushi Akita , Yoshiki Miura
IPC分类号： H01L21/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B25/183 , C30B29/406 , H01L29/045 , Y10S438/945 , Y10S438/973
摘要： A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.
摘要翻译：具有两英寸以上的大直径的GaN衬底，通过该GaN衬底可以以低成本在工业上获得具有诸如亮度效率，寿命等的改善的特性的发光元件的半导体器件，具有外延的衬底提供了形成在GaN衬底上的层，半导体器件和制造GaN衬底的方法。 GaN衬底具有主表面并且包含低缺陷晶体区域和与低缺陷晶体区域相邻的缺陷集中区域。低缺陷晶体区域和缺陷集中区域从主表面延伸到位于主表面相对侧的后表面。平面方向相对于主表面的法线矢量在偏角方向上倾斜。

94. 发明申请

US20100189148A1 GROUP III NITRIDE SEMICONDUCTOR LASER 有权
标题翻译： III类氮化物半导体激光器
公开(公告)号：US20100189148A1
公开(公告)日：2010-07-29
申请号：US12600300
申请日：2009-02-17
申请人： Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi
发明人： Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi
IPC分类号： H01S5/323 , H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/3202 , H01S5/3211 , H01S5/3215 , H01S5/3407 , H01S2304/04
摘要： A group III nitride semiconductor laser is provided that has a good optical confinement property and includes an InGaN well layer having good crystal quality.An active layer 19 is provided between a first optical guiding layer 21 and a second optical guiding layer 23. The active layer 19 can include well layers 27a, 27b, and 27c and further includes at least one first barrier layer 29a provided between the well layers. The first and second optical guiding layers 21 and 23 respectively include first and second InGaN regions 21a and 23a smaller than the band gap E29 of the first barrier layer 29a, and hence the average refractive index nGUIDE of the first and second optical guiding layers 21 and 23 can be made larger than the refractive index n29 of the first barrier layer 29a. Thus, good optical confinement is achieved. The band gap E29 of the first barrier layer 29a is larger than the band gaps E21 and E23 of the first and second InGaN regions 21a and 23a.
摘要翻译：提供具有良好的光学限制特性的III族氮化物半导体激光器，并且包括具有良好晶体质量的InGaN阱层。有源层19设置在第一光引导层21和第二光引导层23之间。有源层19可以包括阱层27a，27b和27c，并且还包括设置在阱层之间的至少一个第一势垒层29a 。第一和第二光导层21和23分别包括比第一阻挡层29a的带隙E29小的第一和第二InGaN区21a和23a，并且因此包括第一和第二光导层21的平均折射率nGUIDE和 23可以被制成大于第一阻挡层29a的折射率n29。因此，实现良好的光学约束。第一阻挡层29a的带隙E29大于第一和第二InGaN区域21a和23a的带隙E21和E23。

95. 发明申请

US20090227056A1 METHOD OF FABRICATING NITRIDE SEMICONDUCTOR LASER 有权
标题翻译：制备氮化物半导体激光的方法
公开(公告)号：US20090227056A1
公开(公告)日：2009-09-10
申请号：US12396858
申请日：2009-03-03
申请人： Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi
发明人： Takashi Kyono , Katsushi Akita , Yusuke Yoshizumi
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S2304/12
摘要： A method of fabricating a nitride semiconductor laser comprises preparing a substrate having a plurality of marker structures and a crystalline mass made of a hexagonal gallium nitride semiconductor. The primary and back surfaces of the substrate intersect with a predetermined axis extending in the direction of a c-axis of the hexagonal gallium nitride semiconductor. Each marker structure extends along a reference plane defined by the c-axis and an m-axis of the hexagonal gallium nitride semiconductor. The method comprises cutting the substrate along a cutting plane to form a wafer of hexagonal gallium nitride semiconductor, and the cutting plane intersects with the plurality of the marker structures. The wafer has a plurality of first markers, each of which extends from the primary surface to the back surface of the wafer, and each of the first markers comprises part of each of the marker structures. The primary surface of the wafer is semipolar or nonpolar. The method comprises growing a number of gallium nitride based semiconductor layers for a semiconductor laser. The method comprises cleaving the substrate product at a cleavage plane of the hexagonal gallium nitride semiconductor, after forming a substrate product in an electrode forming step.
摘要翻译：一种制造氮化物半导体激光器的方法包括制备具有多个标记结构的基板和由六方晶系氮化镓半导体制成的晶体。基板的主表面和背面与沿六方晶系氮化镓半导体的c轴方向延伸的规定轴相交。每个标记结构沿着由六方晶系氮化镓半导体的c轴和m轴限定的参考平面延伸。该方法包括沿着切割平面切割基板以形成六方晶系氮化镓半导体晶片，切割平面与多个标记结构相交。晶片具有多个第一标记，每个第一标记从晶片的主表面延伸到后表面，并且每个第一标记包括每个标记结构的一部分。晶圆的主表面是半极性或非极性。该方法包括生长用于半导体激光器的多个氮化镓基半导体层。该方法包括在电极形成步骤中形成衬底产物之后，在六方晶系氮化镓半导体的解理面处切割衬底产物。

96. 发明授权

US07550776B2 Light generating semiconductor device and method of making the same 有权
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US07550776B2
公开(公告)日：2009-06-23
申请号：US12071440
申请日：2008-02-21
申请人： Katsushi Akita
发明人： Katsushi Akita
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0075 , Y10S438/977
摘要： In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor film. A conductive substrate is bonded to a surface of the electrode film using a conductive adhesive. After bonding the conductive substrate, the GaN or AlGaN substrate is separated from the GaN-based semiconductor portion to form the semiconductor light generating device.
摘要翻译：在制造半导体光产生装置的方法中，GaN基半导体部分形成在GaN或AlGaN衬底上。 GaN基半导体部分包括发光膜。在GaN基半导体膜上形成电极膜。使用导电性粘合剂将导电性基板结合到电极膜的表面。在接合导电基板之后，将GaN或AlGaN衬底与GaN基半导体部分分离，以形成半导体光产生器件。

97. 发明申请

US20080283851A1 GaN Substrate, and Epitaxial Substrate and Semiconductor Light-Emitting Device Employing the Substrate 审中-公开
标题翻译： GaN衬底和外延衬底以及使用衬底的半导体发光器件
公开(公告)号：US20080283851A1
公开(公告)日：2008-11-20
申请号：US12120236
申请日：2008-05-14
申请人： Katsushi Akita
发明人： Katsushi Akita
IPC分类号： H01L33/00 , H01L29/04
CPC分类号： C30B25/18 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L29/045 , H01L33/16 , H01L33/32 , H01S5/3202 , H01S5/32341
摘要： GaN substrate (30) whose growth plane (30a) is oriented off-axis with respect to either the m-plane or the a-plane. That is, in the GaN substrate (30), the growth plane (30a) is either an m-plane or an a-plane that has been misoriented. Inasmuch as the m-plane and the a-plane are nonpolar, utilizing the GaN substrate (30) to fabricate a semiconductor light-emitting device (60) averts the influence of piezoelectric fields, making it possible to realize superior emission efficiency. Imparting to the growth plane the off-axis angle in terms of either the m-plane or the a-plane realizes high-quality morphology in crystal grown on the substrate. Utilizing the GaN substrate to fabricate semiconductor light-emitting devices enables as a result the realization of further improved emission efficiency.
摘要翻译：其生长平面（30a）相对于m面或a平面离轴取向的GaN衬底（30）。也就是说，在GaN衬底（30）中，生长平面（30a）是已经取向偏移的m面或者a面。由于m面和a面是非极性的，利用GaN衬底（30）制造半导体发光器件（60）可以避免压电场的影响，从而可以实现优异的发光效率。在生长平面上，以m面或者a面为基准的离轴角实现了在衬底上生长的晶体中的高质量形态。利用GaN衬底制造半导体发光器件，能够实现进一步提高的发光效率。

98. 发明申请

US20080169483A1 Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same 有权
标题翻译：接合有GaN的薄膜的基板及其制造方法，以及GaN系半导体器件及其制造方法
公开(公告)号：US20080169483A1
公开(公告)日：2008-07-17
申请号：US11819574
申请日：2007-06-28
申请人： Hitoshi Kasai , Akihiro Hachigo , Yoshiki Miura , Katsushi Akita
发明人： Hitoshi Kasai , Akihiro Hachigo , Yoshiki Miura , Katsushi Akita
IPC分类号： H01L29/20 , H01L21/00
CPC分类号： H01L22/26 , H01L21/187 , H01L21/76251 , H01L29/2003 , H01L29/66462 , H01L33/0075 , H01L2924/0002 , H01L2924/00
摘要： There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 μm and at most 100 μm from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 μm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.
摘要翻译：提供了一种制造薄GaN膜接合衬底的方法，包括以下步骤：将GaN体结构体与GaN的类型或化学组成不同的衬底接合; 并且将GaN本体结晶体在距离其不同类型的衬底的界面至少0.1μm和至多100μm的距离的平面上分割，以在不同类型的衬底上提供GaN薄膜，其中 GaN体结晶体具有与不同类型的衬底接合的表面，其最大表面粗糙度Rmax至多为20μm。因此，包括具有类型不同的衬底的薄GaN接合衬底和GaN的薄膜牢固地连接在不同类型的衬底上的GaN基半导体器件和沉积在薄膜上的至少一个GaN基半导体层的GaN，可以以低成本制造。

99. 发明授权

US07351347B2 Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate 失效
标题翻译：氮化镓沉积基板，氮化镓沉积基板的制造方法以及氮化镓基板的制造方法
公开(公告)号：US07351347B2
公开(公告)日：2008-04-01
申请号：US10482434
申请日：2003-01-23
申请人： Katsushi Akita , Takuji Okahisa
发明人： Katsushi Akita , Takuji Okahisa
IPC分类号： H01L21/302
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647
摘要： GaN crystal having few dislocations is grown by using together ELO-mask and defect-seeding-mask means. ELO masks make it so that GaN crystal does not grow directly, but grows laterally; defect-seeding masks make it so that closed defect-gathering regions in which defects are concentrated are grown.Any of the materials SiN, SiON or SiO2 is utilized for the ELO mask, while any of the materials Pt, Ni or Ti is utilized for the defect-seeding masks. With a sapphire, GaAs, spinel, Si, InP, SiC, etc. single-crystal substrate, or one in which a GaN buffer layer is coated onto a single-crystal substrate of these, as an under-substrate, the ELO mask and defect-seeding masks are provided complementarily and GaN is vapor-phase deposited.
摘要翻译：通过使用ELO掩模和缺陷种子掩模手段一起生长具有很少位错的GaN晶体。 ELO掩模使得GaN晶体不直接生长，而是横向生长; 缺陷接种掩模使得使得缺陷集中的封闭的缺陷聚集区域生长。任何材料SiN，SiON或SiO 2都用于ELO掩模，而任何材料Pt，Ni或Ti用于缺陷种子掩模。使用蓝宝石，GaAs，尖晶石，Si，InP，SiC等单晶衬底，或其中GaN缓冲层涂覆在这些的单晶衬底上作为衬底下的ELO掩模和补片提供缺陷种子掩模，气相沉积GaN。

100. 发明申请

US20070252162A1 Light-emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20070252162A1
公开(公告)日：2007-11-01
申请号：US11818024
申请日：2007-06-12
申请人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
发明人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
IPC分类号： H01L29/22
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/32
摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.
摘要翻译：为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层在GaN衬底的第一主表面的一侧。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式