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91. 发明授权

US08705265B2 Ionic devices containing a membrane between layers 有权
标题翻译：在层之间含有膜的离子装置
公开(公告)号：US08705265B2
公开(公告)日：2014-04-22
申请号：US13383614
申请日：2010-04-30
申请人： Dmitri B. Strukov , Alexandre M. Bratkovski , R. Stanley Williams , Michael R. T. Tan
发明人： Dmitri B. Strukov , Alexandre M. Bratkovski , R. Stanley Williams , Michael R. T. Tan
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： G02F1/1525
摘要： A device contains a first layer, a second layer; and a membrane between the first and second layers. Mobile ions are in at least one of the first and second layers, and the membrane is permeable to the ions. Interfaces of the conductive membrane with the first layer and the second layer are such that charge of a polarity of the ions collects at the interfaces.
摘要翻译：设备包含第一层，第二层; 以及第一和第二层之间的膜。移动离子在第一和第二层中的至少一个中，并且膜对离子是可渗透的。导电膜与第一层和第二层的接触使得离子的极性的电荷在界面处收集。

92. 发明申请

US20130207069A1 METAL-INSULATOR TRANSITION SWITCHING DEVICES 审中-公开
标题翻译：金属绝缘子过渡开关装置
公开(公告)号：US20130207069A1
公开(公告)日：2013-08-15
申请号：US13880269
申请日：2010-10-21
申请人： Matthew D. Pickett , Philip J. Kuekes , R. Stanley Williams , Frederick Perner , Wei Wu , Alexandre M. Bratkovski
发明人： Matthew D. Pickett , Philip J. Kuekes , R. Stanley Williams , Frederick Perner , Wei Wu , Alexandre M. Bratkovski
IPC分类号： H01L47/02 , H01L47/00
CPC分类号： H01L47/02 , H01L47/005 , H01L49/003
摘要： A metal-insulator transition switching device includes a first electrode and a second electrode. A channel region which includes a bulk metal-insulator transition material separates the first electrode and the second electrode. A method for forming a metal-insulator transition switching device includes depositing a layer of bulk metal-insulator transition material in between a first electrode and a second electrode to form a channel region and forming a gate electrode operatively connected to the channel region.
摘要翻译：金属 - 绝缘体转变开关器件包括第一电极和第二电极。包括体金属 - 绝缘体转移材料的沟道区域分离第一电极和第二电极。一种用于形成金属 - 绝缘体转变开关器件的方法包括在第一电极和第二电极之间沉积体金属 - 绝缘体转变材料层以形成沟道区并形成可操作地连接到沟道区的栅电极。

93. 发明申请

US20080100345A1 Methods and systems for implementing logic gates with spintronic devices located at nanowire crossbar junctions of crossbar arrays 有权
标题翻译：用于实现位于横杆阵列的纳米线交叉点处的自旋电子器件的逻辑门的方法和系统
公开(公告)号：US20080100345A1
公开(公告)日：2008-05-01
申请号：US11590959
申请日：2006-10-31
申请人： Alexandre M. Bratkovski , Wei Wu , Gregory S. Snider , R. Stanley Williams
发明人： Alexandre M. Bratkovski , Wei Wu , Gregory S. Snider , R. Stanley Williams
IPC分类号： H03K19/20
CPC分类号： H03K19/18 , B82Y10/00 , H01L27/22 , H03K3/45
摘要： Various method and system embodiments of the present invention are directed to implementing serial logic gates using nanowire-crossbar arrays with spintronic devices located at nanowire-crossbar junctions. In one embodiment of the present invention, a nanowire-crossbar array comprises a first nanowire and a number of substantially parallel control nanowires positioned so that each control nanowire overlaps the first nanowire. The nanowire-crossbar array includes a number of spintronic devices. Each spintronic device is configured to connect one of the control nanowires to the first nanowire and operate as a latch for controlling signal transmissions between the control nanowire and the first nanowire.
摘要翻译：本发明的各种方法和系统实施例涉及使用位于纳米线交叉点处的自旋电子器件的纳米线交叉阵列来实现串行逻辑门。在本发明的一个实施例中，纳米线交叉串阵列包括第一纳米线和多个基本上平行的控制纳米线，所述纳米线被定位成使得每个对照纳米线与第一纳米线重叠。纳米线交叉开关阵列包括许多自旋电子器件。每个自旋电子设备被配置为将控制纳米线中的一个连接到第一纳米线并且用作用于控制控制纳米线和第一纳米线之间的信号传输的锁存器。

94. 发明申请

US20120025343A1 THERMOELECTRIC DEVICE HAVING A VARIABLE CROSS-SECTION CONNECTING STRUCTURE 审中-公开
标题翻译：具有可变交叉部分连接结构的热电装置
公开(公告)号：US20120025343A1
公开(公告)日：2012-02-02
申请号：US13262799
申请日：2009-04-15
申请人： Philip J. Kuekes , Alexandre M. Bratkovski , Hans S. Cho , Nathaniel J. Quitoriano , Theodore I. Kamins , R. Stanley Williams
发明人： Philip J. Kuekes , Alexandre M. Bratkovski , Hans S. Cho , Nathaniel J. Quitoriano , Theodore I. Kamins , R. Stanley Williams
IPC分类号： H01L29/66 , H01L35/34
CPC分类号： H01L35/32
摘要： A thermoelectric device having a variable cross-section connecting structure includes a first electrode, a second electrode, and a connecting structure connecting the first electrode and the second electrode. The connecting structure has a first section and a second section. The width of the second section is greater than the width of the first section, and the width of the first section is less than a width that is approximately equivalent to a phonon mean free path through the first section.
摘要翻译：具有可变横截面连接结构的热电装置包括第一电极，第二电极和连接第一电极和第二电极的连接结构。连接结构具有第一部分和第二部分。第二部分的宽度大于第一部分的宽度，并且第一部分的宽度小于大致等于通过第一部分的声子平均自由程的宽度。

95. 发明授权

US06512119B2 Bistable molecular mechanical devices with an appended rotor activated by an electric field for electronic switching, gating and memory applications 失效
标题翻译：双稳态分子机械装置，具有通过电场激活的附加转子用于电子开关，门控和存储器应用
公开(公告)号：US06512119B2
公开(公告)日：2003-01-28
申请号：US09759438
申请日：2001-01-12
申请人： Alexandre M. Bratkovski , Pavel Kornilovich , R. Stanley Williams , Xiao-An Zhang
发明人： Alexandre M. Bratkovski , Pavel Kornilovich , R. Stanley Williams , Xiao-An Zhang
IPC分类号： C07D21908
CPC分类号： G11C23/00 , B82Y10/00 , C07D219/16 , G02F1/15 , G02F1/174 , G11C13/0014 , G11C13/02 , G11C13/04 , G11C2213/14 , G11C2213/77 , G11C2213/81
摘要： In accordance with the present invention, nanometer-scale reversible electronic switches are provided that can be assembled to make cross-bar circuits that provide memory, logic, and communications functions. The electronic switches, or crossed-wire devices, comprise a pair of crossed wires that form a junction where one wire crosses another at an angle other than zero degrees and at least one connector species connecting the pair of crossed wires in the junction. The junction has a functional dimension in nanometers, wherein at least one connector species and the pair of crossed wires forms an electrochemical cell. The connector species comprises a bistable molecule having a general formula given by The bistable molecules evidence high switching speed. Such molecules are essentially stable against switching due to thermal fluctuations.
摘要翻译：根据本发明，提供了可组装纳米级的可逆电子开关，以制造提供存储器，逻辑和通信功能的交叉电路。电子开关或交叉线装置包括一对交叉导线，其形成一个线，其中一个线以零度以外的角度与另一条线交叉，并且至少一个连接器种类连接在该结中的一对交叉线。该结具有纳米的功能尺寸，其中至少一个连接器种类和一对交叉线形成电化学电池。连接器种类包括双稳态分子，其具有由双稳态分子表示的通式表示高切换速度。由于热波动，这种分子基本上是稳定的。

96. 发明申请

US20130033920A1 IONIC DEVICES CONTAINING A MEMBRANE BETWEEN LAYERS 有权
标题翻译：包含层之间的薄膜的离子装置
公开(公告)号：US20130033920A1
公开(公告)日：2013-02-07
申请号：US13383614
申请日：2010-04-30
申请人： Dmitri B. Strukov , Alexandre M. Bratkovski , R. Stanley Williams , Michael R.T. Tan
发明人： Dmitri B. Strukov , Alexandre M. Bratkovski , R. Stanley Williams , Michael R.T. Tan
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： G02F1/1525
摘要： A device contains a first layer (420), a second layer (440); and a membrane (430) between the first and second layers (420, 440). Mobile ions (425) are in at least one of the first and second layers (420, 440), and the membrane (430) is permeable to the ions. Interfaces of the conductive membrane (430) with the first layer (420) and the second layer (440) are such that charge of a polarity of the ions (425) collects at the interfaces.
摘要翻译：装置包含第一层（420），第二层（440）; 和在第一和第二层（420,440）之间的膜（430）。移动离子（425）在第一和第二层（420,440）中的至少一个中，并且膜（430）对离子是可渗透的。导电膜（430）与第一层（420）和第二层（440）的接触使得离子（425）的极性的电荷在界面处收集。

97. 发明申请

US20120281980A1 OPTICAL SENSOR NETWORKS AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：光传感器网络及其制作方法
公开(公告)号：US20120281980A1
公开(公告)日：2012-11-08
申请号：US13384943
申请日：2010-01-29
申请人： Hans S. Cho , Alexandre M. Bratkovski , R. Stanley Williams , Peter George Hartwell
发明人： Hans S. Cho , Alexandre M. Bratkovski , R. Stanley Williams , Peter George Hartwell
IPC分类号： H04B10/08
CPC分类号： G02B6/2938 , G01D5/268 , G01N21/7703 , G01N2021/7793 , G02B6/136 , G02B6/4403
摘要： Various embodiments of the present invention are directed to sensor networks and to methods for fabricating sensor networks. In one aspect, a sensor network includes a processing node (110, 310), and one or more sensor lines (102,202,302) optically coupled to the processing node. Each sensor line comprises a waveguide (116,216,316), and one or more sensor nodes (112,210). Each sensor node is optically coupled to the waveguide and configured to measure one or more physical conditions and, encode measurement results in one or more wavelengths of light carried by the waveguide to the processing node.
摘要翻译：本发明的各种实施例涉及传感器网络以及用于制造传感器网络的方法。在一个方面，传感器网络包括处理节点（110,310）以及光耦合到处理节点的一个或多个传感器线（102,202,302）。每个传感器线包括波导（116,216,316）和一个或多个传感器节点（112,210）。每个传感器节点光学耦合到波导并且被配置成测量一个或多个物理条件，并将波导携带的一个或多个波长的测量结果编码到处理节点。

98. 发明授权

US08120071B2 MEMFET RAM 有权
公开(公告)号：US08120071B2
公开(公告)日：2012-02-21
申请号：US12685494
申请日：2010-01-11
申请人： Alexandre M. Bratkovski , R. Stanley Williams
发明人： Alexandre M. Bratkovski , R. Stanley Williams
IPC分类号： H01L29/80 , H01L31/112 , H01L29/792
CPC分类号： H01L27/101 , H01L29/803
摘要： A non-volatile field-effect device. The non-volatile field-effect device includes a source, a drain, a channel-formation portion and a memristive gate. The channel-formation portion is disposed between and coupled with the source and the drain. The memristive gate is disposed over the channel-formation portion and coupled with the channel-formation portion. The memristive gate includes a plurality of mobile ions and a confinement structure for the plurality of mobile ions. Moreover, the memristive gate is configured to switch the channel-formation portion from a first conductivity state to a second conductivity state in response to migration of the plurality of mobile ions within the confinement structure.
摘要翻译：非易失性场效应器件。非易失性场效应器件包括源极，漏极，沟道形成部分和忆阻栅极。通道形成部分设置在源极和漏极之间并与源极耦合。忆阻门设置在通道形成部分上方并与通道形成部分联接。忆阻门包括多个移动离子和多个移动离子的约束结构。此外，忆阻门被配置为响应于限制结构内的多个移动离子的迁移，将沟道形成部分从第一导电状态切换到第二导电状态。

99. 发明申请

US20110169052A1 MEMFET RAM 有权
公开(公告)号：US20110169052A1
公开(公告)日：2011-07-14
申请号：US12685494
申请日：2010-01-11
申请人： Alexandre M. Bratkovski , R. Stanley Williams
发明人： Alexandre M. Bratkovski , R. Stanley Williams
IPC分类号： H01L27/085 , H01L29/80
CPC分类号： H01L27/101 , H01L29/803
摘要： A non-volatile field-effect device. The non-volatile field-effect device includes a source, a drain, a channel-formation portion and a memristive gate. The channel-formation portion is disposed between and coupled with the source and the drain. The memristive gate is disposed over the channel-formation portion and coupled with the channel-formation portion. The memristive gate includes a plurality of mobile ions and a confinement structure for the plurality of mobile ions. Moreover, the memristive gate is configured to switch the channel-formation portion from a first conductivity state to a second conductivity state in response to migration of the plurality of mobile ions within the confinement structure.
摘要翻译：非易失性场效应器件。非易失性场效应器件包括源极，漏极，沟道形成部分和忆阻栅极。通道形成部分设置在源极和漏极之间并与源极耦合。忆阻门设置在通道形成部分上方并与通道形成部分联接。忆阻门包括多个移动离子和多个移动离子的约束结构。此外，忆阻门被配置为响应于限制结构内的多个移动离子的迁移，将沟道形成部分从第一导电状态切换到第二导电状态。

100. 发明授权

US07186380B2 Transistor and sensors made from molecular materials with electric dipoles 失效
标题翻译：晶体管和传感器由具有电偶极子的分子材料制成
公开(公告)号：US07186380B2
公开(公告)日：2007-03-06
申请号：US10187721
申请日：2002-07-01
申请人： Yong Chen , Alexandre M. Bratkovski , R. Stanley Williams
发明人： Yong Chen , Alexandre M. Bratkovski , R. Stanley Williams
IPC分类号： B32B5/02 , B32B27/04 , B32B27/12 , B32B27/00 , G01N15/06
CPC分类号： H01L51/0512 , B82Y10/00 , B82Y15/00 , H01L51/005 , H01L51/0595
摘要： A polarization-dependent device is provided that includes organic materials having electric dipoles. The polarization-dependent device comprises: (a) a source region and a drain region separated by a channel region having a length L, formed on a substrate; (b) a dielectric layer on at least a portion of the channel region; and (c) a molecular layer on the dielectric layer, the molecular layer comprising molecules having a switchable dipolar moiety. Addition of a gate over the molecular layer permits fabrication of a transistor, while omission of the gate, and utilization of suitable molecules that are sensitive to various changes in the environment permits fabrication of a variety of sensors. The molecular transistor and sensors are suitable for high density nanoscale circuits and are less expensive than prior art approaches.
摘要翻译：提供了一种偏振相关装置，其包括具有电偶极子的有机材料。所述偏振相关装置包括：（a）由在衬底上形成的具有长度L的沟道区域分隔的源极区域和漏极区域; （b）在沟道区的至少一部分上的介电层; 和（c）介电层上的分子层，该分子层包含具有可切换偶极子部分的分子。在分子层上添加栅极允许制造晶体管，同时省略栅极以及利用对环境中的各种变化敏感的合适分子允许制造各种传感器。分子晶体管和传感器适用于高密度纳米级电路，并且比现有技术方法便宜。

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