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91. 发明申请

US20140217527A1 METHOD OF MANUFACTURING MRAM MEMORY ELEMENTS 审中-公开
标题翻译：制造MRAM记忆元素的方法
公开(公告)号：US20140217527A1
公开(公告)日：2014-08-07
申请号：US14170645
申请日：2014-02-03
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/12 , H01L43/02
CPC分类号： H01L43/12 , H01L43/02
摘要： A STT-MRAM comprises a method to form magnetic random access memory (MRAM) element array having ultra small dimensions using double photo exposures and etch of their hard masks. The memory cells are located at the cross section of two ultra-narrow photo-resist lines suspended between two large photo-resist bases. Array of MRAM cells with small dimension is formed by a third magnetic etch.
摘要翻译： STT-MRAM包括使用双重曝光和其硬掩模的蚀刻来形成具有超小尺寸的磁性随机存取存储器（MRAM）元件阵列的方法。存储单元位于悬挂在两个大光抗蚀基底之间的两个超窄光致抗蚀剂线的横截面上。通过第三磁性蚀刻形成具有小尺寸的MRAM单元的阵列。

92. 发明授权

US08797692B1 Magnetic recording sensor with AFM exchange coupled shield stabilization 有权
标题翻译：磁记录传感器与AFM交换屏蔽稳定
公开(公告)号：US08797692B1
公开(公告)日：2014-08-05
申请号：US13607593
申请日：2012-09-07
申请人： Yimin Guo , Rongfu Xiao , Yuankai Zheng
发明人： Yimin Guo , Rongfu Xiao , Yuankai Zheng
IPC分类号： G11B5/11 , G11B5/39
CPC分类号： G11B5/3912 , B82Y10/00 , G11B5/3909 , G11B2005/3996
摘要： A magnetic recording sensor with AFM exchange coupled shield stabilization for use in a data storage device includes a read sensor positioned between a bottom shield and a top shield. The top shield comprises a first ferromagnetic (FM) layer, a coupling layer, and a second FM layer. An exchange coupling insertion layer is provided between the second FM layer and an antiferromagnetic (AFM) layer above. In an embodiment of the invention, the exchange coupling insertion layer comprises CoFe with a Fe content from about 35-45 at. %, and thickness from about 1 nm to about 3 nm. In another embodiment of the invention, the exchange coupling insertion layer comprises a bi-layer, including first sub-layer comprising CoFe with Fe content from about 8-12 at. %, and second sub-layer comprising CoFe with Fe content from about 35-45 at. %, and the bi-layer has a thickness less than about 4 nm.
摘要翻译：具有用于数据存储设备的AFM交换耦合屏蔽稳定性的磁记录传感器包括位于底屏蔽和顶屏蔽之间的读取传感器。顶部屏蔽包括第一铁磁（FM）层，耦合层和第二FM层。在第二FM层和上面的反铁磁（AFM）层之间提供交换耦合插入层。在本发明的一个实施方案中，交换耦合插入层包含Fe含量约35-45at。％，厚度约1nm至约3nm。在本发明的另一实施例中，交换耦合插入层包括双层，包括第一子层，其包含Fe含量约为8-12at。％，并且包含Fe含量为约35-45at。的CoFe的第二子层。％，双层具有小于约4nm的厚度。

93. 发明申请

US20140203383A1 PERPENDICULAR MAGNETORESISTIVE MEMORY ELEMENT 审中-公开
标题翻译：全能磁记忆元件
公开(公告)号：US20140203383A1
公开(公告)日：2014-07-24
申请号：US14162715
申请日：2014-01-23
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/02
CPC分类号： H01L43/08 , H01L43/10
摘要： A perpendicular magnetoresistive memory element comprises a three-terminal structure having a thick multilayered recording layer connected to a middle electrode and a functional layer having rocksalt crystal structure interfacing to the recording layer. The interface crystal grain structures between the functional layer and the recording layer provides an electric field manipulated perpendicular anisotropy enabling a low spin transfer write current.
摘要翻译：垂直磁阻存储元件包括具有连接到中间电极的厚多层记录层和与记录层相接的岩盐晶体结构的功能层的三端结构。功能层和记录层之间的界面晶粒结构提供了一种操纵垂直各向异性的电场，能够实现低自旋转移写入电流。

94. 发明授权

US08715776B2 Method for providing AFM exchange pinning fields in multiple directions on same substrate 有权
标题翻译：在同一基板上提供多个方向的AFM交换钉扎场的方法
公开(公告)号：US08715776B2
公开(公告)日：2014-05-06
申请号：US11904668
申请日：2007-09-28
申请人： Yimin Guo , Grace Gorman
发明人： Yimin Guo , Grace Gorman
IPC分类号： B05D5/12
CPC分类号： H01F41/304 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , H01F10/3254 , H01F10/3268 , H01L27/22
摘要： Simultaneous setting of exchange pinning field magnetization in more than one direction for several thin film structures on a single substrate has been achieved by first orienting the structures as needed. A layer of hard magnetic material is then deposited, suitably patterned to control the direction of its flux, and then magnetized through a single exposure to a strong magnetic field. The assemblage is then thermally annealed (in the absence of any applied field) at a temperature higher than the AFM material blocking temperature, following which the thin film structures are magnetically pinned in the intended directions.
摘要翻译：通过根据需要首先定向结构，已经实现了在单个衬底上的多个薄膜结构的多于一个方向上的交换钉扎磁场的同时设置。然后沉积一层硬磁材料，适当地构图以控制其通量的方向，然后通过单次暴露于强磁场而被磁化。然后在高于AFM材料阻挡温度的温度下，将该组合物热退火（在不存在任何施加场的情况下），随后薄膜结构被磁性固定在预定方向上。

95. 发明授权

US08711524B2 Patterned MR device with controlled shape anisotropy 有权
标题翻译：具有受控形状各向异性的图案化MR器件
公开(公告)号：US08711524B2
公开(公告)日：2014-04-29
申请号：US12012667
申请日：2008-02-05
申请人： Yuchen Zhou , Yimin Guo
发明人： Yuchen Zhou , Yimin Guo
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/091 , G11B5/3906 , G11B5/3925 , G11B5/398 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F41/302
摘要： A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. This side pattern absorbs external field flux, concentrating it to flow into the sensor's edges to promote larger MR sensor magnetization rotation.
摘要翻译：描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。该侧面图吸收外部磁场通量，将其集中流入传感器的边缘，以促进较大的MR传感器磁化旋转。

96. 发明授权

US08674466B2 Magnetic random access memory with selective toggle memory cells 有权
标题翻译：具有选择性触发存储单元的磁性随机存取存储器
公开(公告)号：US08674466B2
公开(公告)日：2014-03-18
申请号：US12151224
申请日：2008-05-05
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L29/76
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01F10/3295
摘要： A toggle MTJ is disclosed that has a SAF free layer with two or more magnetic sub-layers having equal magnetic moments but different anisotropies which is achieved by selecting Ni˜0.8Fe˜0.2 for one sub-layer and CoFeB or the like with a uni-axial anisotropy of 10 to 30 Oe for the higher anisotropy sub-layer. When a field is applied at
摘要翻译：公开了一种切换MTJ，其具有具有两个或更多个具有相同磁矩但不同各向异性的磁性子层的SAF自由层，其通过用单一的子层选择Ni〜0.8Fe〜0.2，并且通过选择CoFeB等对于较高的各向异性亚层，10〜30Oe的轴向各向异性。当从容易轴以<10°角施加场时，两个子层的磁矢量与容易轴旋转以形成不同的角度。还描述了一种用于选择性地写入沿着与位线段正交的字线的位的方法，并且避免了“首先读取”的需要。在没有位线脉冲的情况下，施加具有由无脉冲间隔分开的两个相反脉冲的双极字线脉冲，以写入“0”。与第二字线脉冲相反的位线脉冲写入“1”。

97. 发明授权

US08422176B1 Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer 有权
标题翻译：用于提供具有双层磁性种子层的磁读取传感器的方法和系统
公开(公告)号：US08422176B1
公开(公告)日：2013-04-16
申请号：US13297204
申请日：2011-11-15
申请人： Qunwen Leng , Laurence L. Chen , Yimin Guo , Yuankai Zheng , Mahendra Pakala
发明人： Qunwen Leng , Laurence L. Chen , Yimin Guo , Yuankai Zheng , Mahendra Pakala
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3929 , H01F10/30 , H01F10/3254 , H01F10/3272
摘要： A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a bilayer magnetic seed layer, an antiferromagnetic (AFM) layer, and a read sensor. The bilayer magnetic seed layer includes a Ni1-xFex layer and a Ni1-yFey layer on the Ni1-xFex layer, where x is at least 0.3 and not more than 1 and where y is not more than 0.19. The AFM layer resides on the bilayer magnetic seed layer. The read sensor is on the AFM layer.
摘要翻译：描述了一种用于提供磁读取换能器的方法和系统。磁读取传感器包括双层磁性种子层，反铁磁（AFM）层和读取传感器。双层磁性种子层在Ni1-xFex层上包含Ni1-xFex层和Ni1-yFey层，其中x为至少0.3且不大于1，其中y不大于0.19。 AFM层位于双层磁性种子层上。读取传感器位于AFM层上。

98. 发明授权

US07764539B2 Spin transfer MRAM device with separated CPP assisted writing 有权
标题翻译：旋转传输MRAM设备，具有分离的CPP辅助写入
公开(公告)号：US07764539B2
公开(公告)日：2010-07-27
申请号：US12462462
申请日：2009-08-04
申请人： Yimin Guo , Jeff Chien
发明人： Yimin Guo , Jeff Chien
IPC分类号： G11C11/00
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10S977/935
摘要： A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1
摘要翻译：描述了具有两个子单元的自旋转移MRAM，每个子单元在上CPP单元和下MTJ单元之间具有导电间隔。每个位单元中的两个导电间隔物由被写入字线控制的晶体管链接。每个位单元中的两个CPP单元具有不同的电阻状态，并且每个子单元中的MTJ单元和CPP单元具有不同的电阻状态。由于由CPP自由层施加的大的去磁场，MTJ自由层响应于CPP自由层中的切换而旋转。公开了一种改进的电路设计，其能够实现更快和更可靠的读取过程，因为该参考是同一位单元内的第二MTJ。当RMTJ1> RMTJ2时，位单元具有“0”状态，当RMTJ1

99. 发明申请

US20100178715A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US20100178715A1
公开(公告)日：2010-07-15
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

100. 发明申请

US20090296455A1 Spin transfer MRAM device with separated CCP assisted writing 有权
标题翻译：旋转传输MRAM设备，分离CCP辅助写入
公开(公告)号：US20090296455A1
公开(公告)日：2009-12-03
申请号：US12462453
申请日：2009-08-04
申请人： Yimin Guo , Jeff Chien
发明人： Yimin Guo , Jeff Chien
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10S977/935
摘要： A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1
摘要翻译：描述了具有两个子单元的自旋转移MRAM，每个子单元在上CPP单元和下MTJ单元之间具有导电间隔。每个位单元中的两个导电间隔物由被写入字线控制的晶体管链接。每个位单元中的两个CPP单元具有不同的电阻状态，并且每个子单元中的MTJ单元和CPP单元具有不同的电阻状态。由于由CPP自由层施加的大的去磁场，MTJ自由层响应于CPP自由层中的切换而旋转。公开了一种改进的电路设计，其能够实现更快和更可靠的读取过程，因为该参考是同一位单元内的第二MTJ。当RMTJ1> RMTJ2时，位单元具有“0”状态，当RMTJ1

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