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1. 发明授权

US07764539B2 Spin transfer MRAM device with separated CPP assisted writing 有权
标题翻译：旋转传输MRAM设备，具有分离的CPP辅助写入
公开(公告)号：US07764539B2
公开(公告)日：2010-07-27
申请号：US12462462
申请日：2009-08-04
申请人： Yimin Guo , Jeff Chien
发明人： Yimin Guo , Jeff Chien
IPC分类号： G11C11/00
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10S977/935
摘要： A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1
摘要翻译：描述了具有两个子单元的自旋转移MRAM，每个子单元在上CPP单元和下MTJ单元之间具有导电间隔。每个位单元中的两个导电间隔物由被写入字线控制的晶体管链接。每个位单元中的两个CPP单元具有不同的电阻状态，并且每个子单元中的MTJ单元和CPP单元具有不同的电阻状态。由于由CPP自由层施加的大的去磁场，MTJ自由层响应于CPP自由层中的切换而旋转。公开了一种改进的电路设计，其能够实现更快和更可靠的读取过程，因为该参考是同一位单元内的第二MTJ。当RMTJ1> RMTJ2时，位单元具有“0”状态，当RMTJ1

2. 发明申请

US20090296455A1 Spin transfer MRAM device with separated CCP assisted writing 有权
标题翻译：旋转传输MRAM设备，分离CCP辅助写入
公开(公告)号：US20090296455A1
公开(公告)日：2009-12-03
申请号：US12462453
申请日：2009-08-04
申请人： Yimin Guo , Jeff Chien
发明人： Yimin Guo , Jeff Chien
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10S977/935
摘要： A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1
摘要翻译：描述了具有两个子单元的自旋转移MRAM，每个子单元在上CPP单元和下MTJ单元之间具有导电间隔。每个位单元中的两个导电间隔物由被写入字线控制的晶体管链接。每个位单元中的两个CPP单元具有不同的电阻状态，并且每个子单元中的MTJ单元和CPP单元具有不同的电阻状态。由于由CPP自由层施加的大的去磁场，MTJ自由层响应于CPP自由层中的切换而旋转。公开了一种改进的电路设计，其能够实现更快和更可靠的读取过程，因为该参考是同一位单元内的第二MTJ。当RMTJ1> RMTJ2时，位单元具有“0”状态，当RMTJ1

3. 发明授权

US07760544B2 Spin transfer MRAM device with separated CPP assisted writing 有权
公开(公告)号：US07760544B2
公开(公告)日：2010-07-20
申请号：US12462434
申请日：2009-08-04
申请人： Yimin Guo , Jeff Chien
发明人： Yimin Guo , Jeff Chien
IPC分类号： G11C11/00
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10S977/935
摘要： A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1

4. 发明授权

US07755933B2 Spin transfer MRAM device with separated CCP assisted writing 有权
标题翻译：旋转传输MRAM设备，分离CCP辅助写入
公开(公告)号：US07755933B2
公开(公告)日：2010-07-13
申请号：US12462453
申请日：2009-08-04
申请人： Yimin Guo , Jeff Chien
发明人： Yimin Guo , Jeff Chien
IPC分类号： G11C11/00
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10S977/935
摘要： A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1
摘要翻译：描述了具有两个子单元的自旋转移MRAM，每个子单元在上CPP单元和下MTJ单元之间具有导电间隔。每个位单元中的两个导电间隔物由被写入字线控制的晶体管链接。每个位单元中的两个CPP单元具有不同的电阻状态，并且每个子单元中的MTJ单元和CPP单元具有不同的电阻状态。由于由CPP自由层施加的大的去磁场，MTJ自由层响应于CPP自由层中的切换而旋转。公开了一种改进的电路设计，其能够实现更快和更可靠的读取过程，因为该参考是同一位单元内的第二MTJ。当RMTJ1> RMTJ2时，位单元具有“0”状态，当RMTJ1

5. 发明申请

US20090298200A1 Spin Transfer MRAM Device with Separated CPP Assisted Writing 有权
标题翻译：旋转转移MRAM设备与分离的CPP辅助写作
公开(公告)号：US20090298200A1
公开(公告)日：2009-12-03
申请号：US12462434
申请日：2009-08-04
申请人： Yimin Guo , Jeff Chien
发明人： Yimin Guo , Jeff Chien
IPC分类号： H01L21/00
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10S977/935
摘要： A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1
摘要翻译：描述了具有两个子单元的自旋转移MRAM，每个子单元在上CPP单元和下MTJ单元之间具有导电间隔。每个位单元中的两个导电间隔物由被写入字线控制的晶体管链接。每个位单元中的两个CPP单元具有不同的电阻状态，并且每个子单元中的MTJ单元和CPP单元具有不同的电阻状态。由于由CPP自由层施加的大的去磁场，MTJ自由层响应于CPP自由层中的切换而旋转。公开了一种改进的电路设计，其能够实现更快和更可靠的读取过程，因为该参考是同一位单元内的第二MTJ。当RMTJ1> RMTJ2时，位单元具有“0”状态，当RMTJ1

6. 发明授权

US07577021B2 Spin transfer MRAM device with separated CPP assisted writing 有权
公开(公告)号：US07577021B2
公开(公告)日：2009-08-18
申请号：US11986375
申请日：2007-11-21
申请人： Yimin Guo , Jeff Chien
发明人： Yimin Guo , Jeff Chien
IPC分类号： G11C11/00
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10S977/935
摘要： A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1

7. 发明申请

US20090129143A1 Spin transfer MRAM device with separated CPP assisted writing 有权
公开(公告)号：US20090129143A1
公开(公告)日：2009-05-21
申请号：US11986375
申请日：2007-11-21
申请人： Yimin Guo , Jeff Chien
发明人： Yimin Guo , Jeff Chien
IPC分类号： G11C11/00 , H01L21/00 , H01L29/82
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10S977/935
摘要： A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1

8. 发明申请

US20090296456A1 Spin transfer MRAM device with separated CPP assisted writing 有权
标题翻译：旋转传输MRAM设备，具有分离的CPP辅助写入
公开(公告)号：US20090296456A1
公开(公告)日：2009-12-03
申请号：US12462462
申请日：2009-08-04
申请人： Yimin Guo , Jeff Chien
发明人： Yimin Guo , Jeff Chien
IPC分类号： G11C11/00 , G11C11/14 , G11C7/00
CPC分类号： H01L27/226 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10S977/935
摘要： A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1
摘要翻译：描述了具有两个子单元的自旋转移MRAM，每个子单元在上CPP单元和下MTJ单元之间具有导电间隔。每个位单元中的两个导电间隔物由被写入字线控制的晶体管链接。每个位单元中的两个CPP单元具有不同的电阻状态，并且每个子单元中的MTJ单元和CPP单元具有不同的电阻状态。由于由CPP自由层施加的大的去磁场，MTJ自由层响应于CPP自由层中的切换而旋转。公开了一种改进的电路设计，其能够实现更快和更可靠的读取过程，因为该参考是同一位单元内的第二MTJ。当RMTJ1> RMTJ2时，位单元具有“0”状态，当RMTJ1

9. 发明授权

US11569440B2 Making a memoristic array with an implanted hard mask 有权
公开(公告)号：US11569440B2
公开(公告)日：2023-01-31
申请号：US15412076
申请日：2017-01-23
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/12 , H01L27/24 , H01L45/00 , H01L27/22
摘要： The invention disclosed a method to make an implanted hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory. Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining element (HMSE) is added below PTM. Due to a better materials adhesion between HMSE and the hard mask, a stronger hard mask array can be formed.

10. 发明申请

US20210343934A1 COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING 有权
公开(公告)号：US20210343934A1
公开(公告)日：2021-11-04
申请号：US16865810
申请日：2020-05-04
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/10 , H01L43/08 , H01F10/30 , H01F10/32 , H01F10/12
摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

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