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    • 2. 发明申请
    • Multi-directional pin anneal of MR sensors with plasmon heating
    • MR等离子体加热的多向引脚退火
    • US20110111133A1
    • 2011-05-12
    • US12590364
    • 2009-11-06
    • Yuchen ZhouXuhui JinGrace Gorman
    • Yuchen ZhouXuhui JinGrace Gorman
    • B05D3/06B05D3/00
    • G01R33/093B82Y25/00B82Y40/00G11B5/3163G11B5/3903H01F10/3254H01F10/3268H01F41/304
    • A method by which portions of a wafer level fabrication can be selectively heated by means of the formation of a plasmon generating layers of specific size, shape, orientation and material on the fabrication and then illuminating the formation with electromagnetic radiation of such wavelength and polarization as will optimally be absorbed by the plasmon generating layers so as to generate plasmons therein. The generated plasmons thereupon produce thermal energy which is transferred to portions of the fabrication with which the plasmon generation layer has thermal contact. This method is particularly advantageous for producing multiple anneals and different magnetic pinning directions for the anti-ferromagnetic pinning layer in each of an array of GMR or TMR devices. In that process, the anti-ferromagnetic layer must be raised above its Curie temperature at which point it loses its anti-ferromagnetic properties and can have a magnetization imposed by application of an external magnetic field. The method can equally well be applied to any wafer level fabrication or deposited film fabrication in which it is desired to heat specific regions to obtain some specified result that is temperature dependent.
    • 可以通过在制造上形成特定尺寸,形状,取向和材料的等离子体激元产生层来选择性地加热晶片级制造的部分的方法,然后用如下波长和极化的电磁辐射照射地层: 将最佳地被等离子体发生层吸收,以便在其中产生等离子体激元。 所产生的等离子体激元产生热能,其转移到等离子体发生层具有热接触的制造部分。 该方法对于在GMR或TMR器件阵列中的每个中的反铁磁钉扎层产生多个退火和不同的磁性钉扎方向特别有利。 在该过程中,反铁磁层必须升高到高于其居里温度,此时其失去其抗铁磁特性,并且可以通过施加外部磁场而施加磁化强度。 该方法同样可以应用于任何晶片级制造或沉积膜制造,其中期望加热特定区域以获得温度依赖性的一些指定结果。
    • 6. 发明授权
    • Multi-directional pin anneal of MR sensors with plasmon heating
    • MR等离子体加热的多向引脚退火
    • US09372241B2
    • 2016-06-21
    • US12590364
    • 2009-11-06
    • Yuchen ZhouXuhui JinGrace Gorman
    • Yuchen ZhouXuhui JinGrace Gorman
    • B05D3/06G01R33/09B82Y25/00B82Y40/00H01F41/30G11B5/31G11B5/39H01F10/32
    • G01R33/093B82Y25/00B82Y40/00G11B5/3163G11B5/3903H01F10/3254H01F10/3268H01F41/304
    • A method by which portions of a wafer level fabrication can be selectively heated by forming plasmon generating layers of specific size, shape, orientation and material on the fabrication and then illuminating the formation with electromagnetic radiation of such wavelength and polarization as will optimally be absorbed by the plasmon generating layers so as to generate plasmons therein. The generated plasmons thereupon produce thermal energy which is transferred to portions of the fabrication with which the plasmon generation layer has thermal contact. This method is particularly advantageous for producing multiple anneals and different magnetic pinning directions for the anti-ferromagnetic pinning layer in each of an array of GMR or TMR devices. In that process, the anti-ferromagnetic layer must be raised above its Curie temperature at which point it loses its anti-ferromagnetic properties and can have a magnetization imposed by application of an external magnetic field. The method can equally well be applied to any wafer level fabrication or deposited film fabrication in which it is desired to heat specific regions to obtain some specified result that is temperature dependent.
    • 可以通过在制造上形成特定尺寸,形状,取向和材料的等离子体激元产生层来选择性地加热晶片级制造的部分的方法,然后用最佳被最佳吸收的波长和极化的电磁辐射照射地层 等离子体发生层,以便在其中产生等离子体激元。 所产生的等离子体激元产生热能,其转移到等离子体发生层具有热接触的制造部分。 该方法对于在GMR或TMR器件阵列中的每个中的反铁磁钉扎层产生多个退火和不同的磁性钉扎方向特别有利。 在该过程中,反铁磁层必须升高到高于其居里温度,此时其失去其抗铁磁特性,并且可以通过施加外部磁场而施加磁化强度。 该方法同样可以应用于任何晶片级制造或沉积膜制造,其中期望加热特定区域以获得温度依赖性的一些指定结果。