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91. 发明授权

US5321654A Semiconductor device having no through current flow in standby period 失效
标题翻译：半导体器件在待机期间没有通过电流流动
公开(公告)号：US5321654A
公开(公告)日：1994-06-14
申请号：US863975
申请日：1992-04-06
申请人： Hiroshi Miyamoto , Yoshikazu Morooka , Shigeru Mori , Shigeru Kikuda , Makoto Suwa , Mitsuya Kinoshita
发明人： Hiroshi Miyamoto , Yoshikazu Morooka , Shigeru Mori , Shigeru Kikuda , Makoto Suwa , Mitsuya Kinoshita
IPC分类号： G11C11/408 , G11C5/14 , G11C7/22 , G11C8/18 , G11C11/401 , G11C11/409 , H01L21/822 , H01L27/04 , H01L27/10 , G11C7/00
CPC分类号： G11C7/22 , G11C5/14 , G11C8/18
摘要： A semiconductor device having amplifying circuits provided near corresponding bonding pads receiving external signals, and positioned between the bonding pads and internal circuits to which such external signals are to be applied. The device includes a control signal generating circuit for the amplifying circuits which is not provided in conventional semiconductor devices. In response to external control signals, the control signal generating circuit generates internal control signals for controlling electric paths between a power supply and ground in the amplifying circuits. During the standby period of the semiconductor device, the paths between the power supply and ground are cut regardless of the potential of the corresponding bonding pads, preventing flow of a through current.
摘要翻译：一种具有放大电路的半导体器件，该放大电路设置在相应的接合焊盘附近，接收外部信号，并且位于接合焊盘和要施加这样的外部信号的内部电路之间。该装置包括用于放大电路的控制信号发生电路，其不在常规半导体器件中提供。响应于外部控制信号，控制信号发生电路产生用于控制放大电路中的电源和接地之间的电气路径的内部控制信号。在半导体器件的待机期间，电源和接地之间的路径被切断，而不管相应的焊盘的电位如何，防止通过电流的流动。

92. 发明授权

US5319051A Terminally reactive polysilane and process for making 失效
标题翻译：端反应性聚硅烷和制备方法
公开(公告)号：US5319051A
公开(公告)日：1994-06-07
申请号：US6513
申请日：1993-01-21
申请人： Eiichi Tabei , Shigeru Mori
发明人： Eiichi Tabei , Shigeru Mori
IPC分类号： C07F7/08 , C08G77/48 , C08G77/60 , C08G77/06
CPC分类号： C08G77/60
摘要： The invention provides terminally reactive polysilanes of the formula: ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are independently alkyl groups or aryl groups, X is a hydrogen or alkenyl group, n, m and k are 0.ltoreq.n.ltoreq.10, 0.ltoreq.m.ltoreq.10, n+m.gtoreq.10, and k.gtoreq.1, especially hydrosiloxy or alkenylsiloxy-terminated polysilanes. They are prepared by reacting hydroxy-terminated polysilanes with dialkylhydrochlorosilanes, alkylarylhydrochlorosilanes, dialkylalkenylchlorosilanes or alkylarylalkenylchlorosilanes in the presence of amine.
摘要翻译：本发明提供下式的末端反应性聚硅烷：其中R 1，R 2，R 3，R 4，R 5和R 6独立地为烷基或芳基，X为氢或烯基，n，m和k为 0≤n≤10,0≤m≤10，n + m> = 10，k> / = 1，特别是水合甲硅烷氧基或烯基甲硅烷氧基封端的聚硅烷。它们通过羟基封端的聚硅烷与二烷基氢氯硅烷，烷基芳基氢氯硅烷，二烷基烯基氯硅烷或烷基芳基烯基氯硅烷在胺的存在下反应制备。

93. 发明授权

US5299160A Semiconductor memory device capable of repairing defective bits 失效
标题翻译：能够修复有缺陷的位的半导体存储器件
公开(公告)号：US5299160A
公开(公告)日：1994-03-29
申请号：US45149
申请日：1993-04-12
申请人： Shigeru Mori
发明人： Shigeru Mori
IPC分类号： G11C11/401 , G11C29/00 , G11C29/04 , G11C29/42 , G11C13/00
CPC分类号： G11C29/78
摘要： An input/output switching circuit is provided between I/O blocks and I/O pads. The input/output switching circuit includes fusable elements connected in series, and a switching elements for defining connection path of I/O blocks and I/O pads in response to a potential of each one end of the fusable elements. The switching element connects an I/O block to an I/O pad in a one-to-one correspondence when all the fusable elements are conductive. When one fusable element is disconnected, the switching element isolates a corresponding defective I/O block from an I/O pad, and switches the connection path of each I/O block towards the pad corresponding to the defective I/O block. In a semiconductor memory device having an error checking bit, the manufacturing yield of a semiconductor memory device can be improved by isolating a defective I/O block that cannot be repaired by a normal redundant circuit scheme, and operating the same as a semiconductor memory device without an error checking bit.
摘要翻译：在I / O块和I / O焊盘之间提供输入/输出切换电路。输入/输出切换电路包括串联连接的可熔元件和用于响应于可熔元件的每一端的电位来定义I / O块和I / O焊盘的连接路径的开关元件。当所有可熔元件都导通时，开关元件以一一对应的方式将I / O块连接到I / O焊盘。当一个可熔断元件断开时，开关元件将相应的有缺陷的I / O块与I / O焊盘隔离，并将每个I / O块的连接路径切换到与故障I / O块对应的焊盘。在具有错误检查位的半导体存储器件中，可以通过隔离通过常规冗余电路方案不能修复的缺陷I / O块并且将其作为半导体存储器件进行操作来提高半导体存储器件的制造成品率没有错误检查位。

94. 发明授权

US5237033A Preparation of polysilanes 失效
标题翻译：聚硅烷的制备
公开(公告)号：US5237033A
公开(公告)日：1993-08-17
申请号：US850641
申请日：1992-03-13
申请人： Eiichi Tabei , Shigeru Mori , Akira Hayashida , Motoo Fukushima
发明人： Eiichi Tabei , Shigeru Mori , Akira Hayashida , Motoo Fukushima
IPC分类号： C08G77/60
CPC分类号： C08G77/60
摘要： Polysilanes are synthesized by reacting dihalosilanes in the presence of alkali metal particles while using copper powder, cuprous oxide, cupric oxide, or an organic copper compound as a catalyst. There are obtained high molecular weight polysilanes in high yields.
摘要翻译：聚硅烷通过在碱金属颗粒存在下使二卤代硅烷反应而合成，同时使用铜粉，氧化亚铜，氧化铜或有机铜化合物作为催化剂。以高产率获得高分子量聚硅烷。

95. 发明授权

US5206330A Method for the preparation of organopolysiloxane free from acid catalyst residue 失效
标题翻译：制备不含酸催化剂残留物的有机聚硅氧烷的方法
公开(公告)号：US5206330A
公开(公告)日：1993-04-27
申请号：US645918
申请日：1991-01-25
申请人： Kouichirou Kobayashi , Naoyuki Ida , Shigeru Mori
发明人： Kouichirou Kobayashi , Naoyuki Ida , Shigeru Mori
IPC分类号： C08G77/06 , C08G77/32 , C08G77/34
CPC分类号： C08G77/34 , C08G77/06
摘要： Proposal is given of a method for the preparation of an organopolysiloxane highly freed from any trace amount of the residue of sulfuric acid or fuming sulfuric acid by the siloxane rearrangement reaction of organosiloxane oligomers into equilibirium by using the acid catalyst. The inventive method comprises subjecting the reaction mixture, after completion of the reaction but before the conventional step of washing with a large volume of water to remove the acid residue, to a hydrolysis reaction of the acid residue bonded to the organopolysiloxane molecules with admixture of a limited amount of water and separating the mixture into aqueous and organopolysiloxane phases to discard the acid-containing aqueous phase.
摘要翻译：提出了通过使用酸催化剂通过有机硅氧烷低聚物的硅氧烷重排反应进入平衡物，制备高效脱除任何痕量硫酸或发烟硫酸的有机聚硅氧烷的方法。本发明的方法包括在反应完成后，但是在用大量水洗涤常规步骤以除去酸残基之前，将反应混合物进行水解反应，从而与结合到有机聚硅氧烷分子的酸残基水解反应限定量的水并将混合物分离成水相和有机聚硅氧烷相以丢弃含酸的水相。

96. 发明授权

US5162477A Preparation of polyorganosilanes 失效
标题翻译：聚有机硅烷的制备
公开(公告)号：US5162477A
公开(公告)日：1992-11-10
申请号：US812284
申请日：1991-12-23
申请人： Shigeru Mori , Eiichi Tabei , Akira Hayashida , Yoshinori Hida , Motoo Fukushima
发明人： Shigeru Mori , Eiichi Tabei , Akira Hayashida , Yoshinori Hida , Motoo Fukushima
IPC分类号： C08G77/48 , C08G77/60
CPC分类号： C08G77/60
摘要： Polyorganosilanes are prepared by contact reaction of organodihalosilanes with alkali metal fine particles in an organic solvent. Prior to the contact reaction, a triorganohalosilane is contacted with the dispersion of alkali metal fine particles in organic solvent for removing reactive oxygen and moisture from the dispersion. Formation of a siloxane bond in the polysilane backbone is minimized, and polyorganosilanes having a minimal oxygen content are obtained.
摘要翻译：聚有机硅烷通过有机二硅烷与碱金属微粒在有机溶剂中的接触反应来制备。在接触反应之前，三有机卤代硅烷与碱金属微粒分散体在有机溶剂中接触，以从分散体除去活性氧和水分。聚硅烷主链中硅氧烷键的形成最小化，得到氧含量最低的聚有机硅烷。

97. 发明授权

US5029993A Lens system for projection television receivers 失效
标题翻译：投影电视接收机镜头系统
公开(公告)号：US5029993A
公开(公告)日：1991-07-09
申请号：US417561
申请日：1989-10-05
申请人： Kyohei Fukuda , Soichi Sakurai , Koji Hirata , Shigeru Mori
发明人： Kyohei Fukuda , Soichi Sakurai , Koji Hirata , Shigeru Mori
IPC分类号： H04N5/74 , G02B13/16 , G02B13/18
CPC分类号： G02B9/34 , G02B13/16 , G02B13/18
摘要： An optical system of a projection television receiver for projecting pictures from a picture tube onto a screen, comprising a fluorescent face constituting the tube face of the receiver tube having a nonspherical shape in such a direction as to compensate the curve of the image face of the projected picture on the screen, and further comprising lenses arranged from the screen side to the tube face of the picture tube in the order of:(A) a first lens having relatively weak power (reciprocal of focal distance) and having a nonspherical shape at least at one face;(B) a second lens having relatively strong positive power;(C) a third lens having relatively weak power and having a nonspherical shape at least at one face; and(D) a fourth lens having relatively strong negative power and having a concave shape at the face of the screen side.

98. 发明授权

US4932404A Chitin fibers and process for the production of the same 失效
标题翻译：几丁质纤维和生产过程相同
公开(公告)号：US4932404A
公开(公告)日：1990-06-12
申请号：US368952
申请日：1989-06-13
申请人： Koji Kifune , Katsuhiro Inoue , Shigeru Mori
发明人： Koji Kifune , Katsuhiro Inoue , Shigeru Mori
IPC分类号： A61L17/08 , D01F9/00
CPC分类号： A61L17/08 , D01F9/00
摘要： A fiber comprised of chitin having a single yarn denier of 0.5 to 20 and a dry tensile strength of 2 g/d or more, and a process for the production thereof are described. The use of such chitin fibers permits the production of surgical sutures having high tensile strength and flexibility, and good absorption properties.

99. 发明授权

US3950913A Method and apparatus for constructing a suspension bridge tower 失效
标题翻译：悬索桥的构造方法及装置
公开(公告)号：US3950913A
公开(公告)日：1976-04-20
申请号：US596108
申请日：1975-07-16
申请人： Shigeru Mori
发明人： Shigeru Mori
IPC分类号： E01D19/14 , E01D21/06 , E04H12/00 , E04D15/00 , B65G47/00
CPC分类号： E01D19/14 , E01D21/06 , E04H12/00
摘要： Apparatus for constructing a block tower for a suspension bridge includes a working platform, means for raising and lowering the platform vertically along a pre-erected base of the tower, and a carriage movable horizontally on tracks on the working platform. The carriage moves between a block loading station lateral of the base and a block unloading station above the top of the tower base where the block is superimposed on other blocks of the pre-erected base. The carriage is specially designed to raise and lower the lower block and to disengage the same at the block unloading station for return to the block loading station. A method is also disclosed for constructing a tower of built-up blocks.
摘要翻译：用于构造用于悬索的块塔的装置包括工作平台，用于沿着塔的预竖直的基座垂直升高和降低平台的装置，以及可在工作平台上的轨道上水平移动的托架。托架在基座的横向加载站和在塔架顶部之上的块卸载站之间移动，其中块被叠置在预先安装的基座的其他块上。滑架专门设计用于升高和降低下部块，并在卸载站处将其卸下，以返回到装载站。还公开了一种用于构建堆积块塔的方法。

100. 发明授权

US08334553B2 Top gate thin-film transistor, display device, and electronic apparatus 有权
标题翻译：顶栅薄膜晶体管，显示器件和电子设备
公开(公告)号：US08334553B2
公开(公告)日：2012-12-18
申请号：US13026683
申请日：2011-02-14
申请人： Shigeru Mori , Takahiro Korenari , Hiroshi Tanabe
发明人： Shigeru Mori , Takahiro Korenari , Hiroshi Tanabe
IPC分类号： H01L31/062
CPC分类号： H01L33/58 , H01L29/7833 , H01L29/78621 , H01L29/78633
摘要： A thin-film transistor manufactured on a transparent substrate has a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate. The channel region has channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film. The light blocking film is divided across the channel region. Interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d), allowing low the manufacturing cost and suppressed photo leak current.
摘要翻译：制造在透明基板上的薄膜晶体管具有顶栅型晶体硅薄膜晶体管的结构，其中遮光膜，基底层，晶体硅膜，栅极绝缘膜和栅极电极膜排列成不重叠的至少一个沟道区域依次形成在透明基板上。沟道区具有沟道长度L，在晶体硅膜中形成在沟道区两侧具有LDD长度d的LDD区，源区和漏区。遮光膜在通道区域上分开。分割的遮光膜之间的间隔x等于或大于沟道长度L，并且等于或小于沟道长度L的和和LDD长度d（L + 2d）的两倍，从而允许低的制造成本和抑制的照片泄漏电流。

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