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91. 发明申请

US20090180087A1 Seal Ring Arrangements for Immersion Lithography Systems 有权
标题翻译：浸入式光刻系统的密封环安排
公开(公告)号：US20090180087A1
公开(公告)日：2009-07-16
申请号：US12413194
申请日：2009-03-27
申请人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Sheng Yu , Jen Chieh Shih
发明人： Burn Jeng Lin , Tsai-Sheng Gau , Chun-Kuang Chen , Ru-Gun Liu , Shinn Sheng Yu , Jen Chieh Shih
IPC分类号： G03B27/52 , H01L21/00
CPC分类号： G03F7/70341 , G03F7/707 , G03F7/70808
摘要： Various seal ring arrangements for an immersion lithography system are disclosed. With the seal ring arrangements, the immersion lithography system can provide better sealing effect for processing the wafers on a wafer chuck.
摘要翻译：公开了用于浸没式光刻系统的各种密封环装置。利用密封环布置，浸没式光刻系统可以为晶片卡盘上的晶片加工提供更好的密封效果。

92. 发明申请

US20080309891A1 APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY 有权
标题翻译：装置和方法
公开(公告)号：US20080309891A1
公开(公告)日：2008-12-18
申请号：US11762651
申请日：2007-06-13
申请人： Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
发明人： Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
IPC分类号： G03B27/52
CPC分类号： G03F7/70341
摘要： Immersion lithography apparatus and method using a shield module are provided. An immersion lithography apparatus including a lens module having an imaging lens, a substrate table positioned beneath the lens module and configured for holding a substrate for processing, a fluid module for providing an immersion fluid to a space between the lens module and the substrate on the substrate table, and a shield module for covering an edge of the substrate during processing.
摘要翻译：提供了使用屏蔽模块的浸渍光刻设备和方法。一种浸没式光刻设备，包括具有成像透镜的透镜模块，位于透镜模块下方的被配置用于保持用于处理的基板的基板台，用于在透镜模块和基板之间的空间中提供浸没流体的流体模块衬底台和用于在处理期间覆盖衬底的边缘的屏蔽模块。

93. 发明申请

US20080248403A1 METHOD AND SYSTEM FOR IMPROVING CRITICAL DIMENSION UNIFORMITY 失效
标题翻译：改善关键尺寸均匀性的方法和系统
公开(公告)号：US20080248403A1
公开(公告)日：2008-10-09
申请号：US11696602
申请日：2007-04-04
申请人： Shinn-Sheng Yu , Chih-Ming Ke , Jacky Huang , Chun-Kuang Chen , Tsai-Sheng Gau
发明人： Shinn-Sheng Yu , Chih-Ming Ke , Jacky Huang , Chun-Kuang Chen , Tsai-Sheng Gau
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F7/70625
摘要： A method for improving critical dimension uniformity of a wafer includes exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits conditions of focus and exposure dose for each of the first plurality of substrates to form a plurality of perturbed wafers; measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers; averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map; measuring a sidewall angle of the plurality of mask patterns; averaging the sidewall angle measured to form a perturbed sidewall angle map; and providing the perturbed critical dimension map and the perturbed sidewall angle map to an exposure tool.
摘要翻译：一种用于改善晶片的临界尺寸均匀性的方法包括在预定位置处将多个掩模图案暴露在第一多个基板上，其中共同的聚焦条件和曝光剂量对于第一多个基板中的每一个基板形成多个扰动的晶片 ; 测量所述多个扰动晶片中的每一个的每个所述预定位置处的所述多个掩模图案的临界尺寸; 平均在多个扰动的晶片上的每个预定位置处测量的临界尺寸，以形成扰动的临界尺寸图; 测量所述多个掩模图案的侧壁角度; 平均测量的侧壁角度以形成扰动的侧壁角度图; 并将扰动的临界尺寸图和扰动的侧壁角度图提供给曝光工具。

94. 发明申请

US20080227228A1 Measurement of Overlay Offset in Semiconductor Processing 有权
标题翻译：半导体处理中叠加偏移的测量
公开(公告)号：US20080227228A1
公开(公告)日：2008-09-18
申请号：US11686078
申请日：2007-03-14
申请人： Te-Chih Huang , Chih-Ming Ke , Tsai-Sheng Gau
发明人： Te-Chih Huang , Chih-Ming Ke , Tsai-Sheng Gau
IPC分类号： H01L21/66 , G03C1/00
CPC分类号： H01L22/12 , G03F7/70633
摘要： A method of semiconductor manufacturing including forming an overlay offset measurement target including a first feature on a first layer and a second feature on a second layer. The first feature and the second feature have a first predetermined overlay offset. The target is irradiated. The reflectivity of the irradiated target is determined. An overlay offset for the first layer and the second layer is calculated using the determined reflectivity.
摘要翻译：一种半导体制造方法，包括在第一层上形成包括第一特征的覆盖偏移测量目标，在第二层上形成第二特征。第一特征和第二特征具有第一预定覆盖偏移。目标被照射。确定照射的靶的反射率。使用确定的反射率计算第一层和第二层的覆盖偏移。

95. 发明申请

US20080187842A1 Method and System For Wafer Inspection 有权
标题翻译：晶圆检测方法与系统
公开(公告)号：US20080187842A1
公开(公告)日：2008-08-07
申请号：US11671772
申请日：2007-02-06
申请人： Chang-Cheng Hung , Tsai-Sheng Gau
发明人： Chang-Cheng Hung , Tsai-Sheng Gau
IPC分类号： G03F7/004 , G06K9/68
CPC分类号： G03F1/84 , G06T7/001 , G06T2207/10056 , G06T2207/30148
摘要： A method for inspecting semiconductor wafers patterned by a photomask includes loading a first wafer and scanning a first image of the first wafer, loading a second wafer and scanning a second image of the second wafer, comparing the first and second images, and classifying a difference detected between the first and second images as a potential defect on the photomask. The potential defect includes a haze defect on the photomask.
摘要翻译：用于检查通过光掩模图案化的半导体晶片的方法包括加载第一晶片并扫描第一晶片的第一图像，加载第二晶片并扫描第二晶片的第二图像，比较第一和第二图像，并对差异进行分类在第一和第二图像之间检测作为光掩模上的潜在缺陷。潜在的缺陷包括光掩模上的雾度缺陷。

96. 发明授权

US07399709B1 Complementary replacement of material 有权
标题翻译：补充材料更换
公开(公告)号：US07399709B1
公开(公告)日：2008-07-15
申请号：US10256401
申请日：2002-09-27
申请人： Burn-Jeng Lin , Hua-Tai Lin , Ru-Gun Liu , Tsai-Sheng Gau , Bang-Chien Ho
发明人： Burn-Jeng Lin , Hua-Tai Lin , Ru-Gun Liu , Tsai-Sheng Gau , Bang-Chien Ho
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0271 , H01L21/0332 , H01L21/0337 , H01L21/32139 , H01L21/76802 , H01L21/76808 , H01L2221/1026
摘要： An image reversal method is described that removes the etch resistance requirement from a resist. A high resolution resist pattern comprised of islands, lines, or trenches is formed with a large process window by exposing through one or more masks including phase edge masks and optionally with resolution enhancement techniques. A complementary material replacement (CMR) layer comprised of an organic polymer or material such as fluorosilicate glass which has a lower etch rate than the resist is coated over the resist pattern. CMR and resist layers are etched simultaneously to provide an image reversed pattern in the CMR layer which is etch transferred into a substrate. The method avoids edge roughness like bird's beak defects in the etched pattern and is useful for applications including forming contact holes in dielectric layers, forming polysilicon gates, and forming trenches in a damascene process. It is also valuable for direct write methods where an image reversal scheme is desired.
摘要翻译：描述了去除抗蚀剂的耐蚀刻性要求的图像反转方法。由岛，线或沟槽组成的高分辨率抗蚀剂图案通过暴露于包括相位边缘掩模的一个或多个掩模以及可选地具有分辨率增强技术而由大的工艺窗口形成。由有机聚合物或诸如氟硅酸盐玻璃的材料组成的互补材料置换（CMR）层被涂覆在抗蚀剂图案上。同时蚀刻CMR和抗蚀剂层以在CMR层中提供图像反转图案，其被蚀刻转移到衬底中。该方法避免了像蚀刻图案中的鸟喙缺陷那样的边缘粗糙度，并且可用于包括在电介质层中形成接触孔，形成多晶硅栅极以及在镶嵌工艺中形成沟槽的应用。对于需要图像反转方案的直接写入方法也是有价值的。

97. 发明申请

US20070242263A1 EXTRACTING ORDINARY AND EXTRAORDINARY OPTICAL CHARACTERISTICS FOR CRITICAL DIMENSION MEASUREMENT OF ANISOTROPIC MATERIALS 有权
标题翻译：提取常规材料的关键尺寸测量的常规和特殊光学特性
公开(公告)号：US20070242263A1
公开(公告)日：2007-10-18
申请号：US11467023
申请日：2006-08-24
申请人： Jacky Huang , Chin-Ming Ke , Tsai-Sheng Gau
发明人： Jacky Huang , Chin-Ming Ke , Tsai-Sheng Gau
IPC分类号： G01N21/41
CPC分类号： G01N21/9501 , G01B11/0641 , G01N21/211 , G01N2021/8416 , G01N2021/95676 , G03F1/84
摘要： Methods and apparatus for measuring a critical dimension of an optically-anisotropic feature, including extracting a number of values each descriptive of the optically-anisotropic feature, including values corresponding to ordinary and extraordinary measurements of one or more optical characteristics of the optically-anisotropic feature. The optical characteristics can include the index of refraction and/or the extinction coefficient of the optically-anisotropic feature, among others. Additionally, the values can be input into an optical critical dimension (OCD) measurement model, such that the critical dimension can be verified via optical measurement based on the OCD measurement model. The optical measurement of the critical dimension can also be verified via scanning electron microscope (SEM) measurement. Furthermore, the optically-anisotropic feature may have a substantially amorphous composition, such as amorphous carbon, including where the optically-anisotropic feature is that of a hardmask substantially comprising amorphous carbon or otherwise having a substantially amorphous composition.
摘要翻译：用于测量光学各向异性特征的临界尺寸的方法和装置，包括提取每个描述光学各向异性特征的多个值，包括对应于光学各向异性特征的一个或多个光学特性的普通和非常测量值。光学特性可以包括光学各向异性特征的折射率和/或消光系数等。另外，这些值可以被输入到光学关键尺寸（OCD）测量模型中，使得可以通过基于OCD测量模型的光学测量来验证临界尺寸。临界尺寸的光学测量也可以通过扫描电子显微镜（SEM）测量来验证。此外，光学各向异性特征可以具有基本无定形的组合物，例如无定形碳，包括其中光学各向异性特征是基本上包含无定形碳的硬掩模或其它具有基本无定形组成的硬质掩模。

98. 发明申请

US20070203680A1 Method and System for Identifying Lens Aberration Sensitive Patterns in an Integrated Circuit Chip 失效
标题翻译：用于识别集成电路芯片中的透镜畸变敏感图案的方法和系统
公开(公告)号：US20070203680A1
公开(公告)日：2007-08-30
申请号：US11421618
申请日：2006-06-01
申请人： Jaw-Jung Shin , King-Chang Shu , Jan-Wen You , Tsai-Sheng Gau
发明人： Jaw-Jung Shin , King-Chang Shu , Jan-Wen You , Tsai-Sheng Gau
IPC分类号： G06G7/48
CPC分类号： G03F7/70433 , G03F7/705 , G03F7/706
摘要： Disclosed is a method and a system for identifying lens aberration sensitive patterns in an integrated circuit chip. A first simulation of a layout is performed to simulate a contour without lens aberration. A second simulation is performed of the layout to simulate a contour with lens aberration. A difference of critical dimension is determined between the contours with and without lens aberration, and at least one lens aberration sensitive pattern is selected from a plurality of layouts based on the difference in critical dimension.
摘要翻译：公开了用于识别集成电路芯片中的透镜像差敏感图案的方法和系统。执行布局的第一模拟以模拟没有透镜像差的轮廓。执行布局以模拟具有透镜像差的轮廓的第二模拟。在具有和不具有透镜像差的轮廓之间确定临界尺寸的差异，并且基于临界尺寸的差异从多个布局中选择至少一个透镜像差敏感图案。

99. 发明授权

US07234128B2 Method for improving the critical dimension uniformity of patterned features on wafers 有权
标题翻译：改善晶片上图形特征的临界尺寸均匀性的方法
公开(公告)号：US07234128B2
公开(公告)日：2007-06-19
申请号：US10678788
申请日：2003-10-03
申请人： Tsai-Sheng Gau , Jaw-Jung Shin , Jan-Wen You , Burn-Jeng Lin
发明人： Tsai-Sheng Gau , Jaw-Jung Shin , Jan-Wen You , Burn-Jeng Lin
IPC分类号： G06F17/50 , G06F19/00 , G06K9/00
CPC分类号： G03F7/70616 , G03F7/70441 , G06T7/0004 , G06T2207/30148
摘要： A method for improving the critical dimension uniformity of a patterned feature on a wafer in semiconductor and mask fabrication is provided. In one embodiment, an evaluation means for evaluating the critical dimension distribution of a plurality of circuit layouts formed on the wafer, the plurality of circuit layouts defined by a mask is provided. A logic operation is performed on the plurality of circuit layouts to extract the patterned feature. The patterned feature is compared with design rules and if there is a deviation or difference between the patterned feature and the design rules, this difference is compensated for by adjusting photolithography adjustable parameters, such as, for example, mask-making.
摘要翻译：提供了一种用于改善半导体和掩模制造中的晶片上的图案化特征的临界尺寸均匀性的方法。在一个实施例中，提供了一种用于评估形成在晶片上的多个电路布局的临界尺寸分布的评估装置，提供了由掩模限定的多个电路布局。对多个电路布局执行逻辑操作以提取图案化特征。将图案特征与设计规则进行比较，并且如果图案特征和设计规则之间存在偏差或差异，则通过调整光刻可调参数（例如掩模制作）来补偿该差异。

100. 发明申请

US20070087291A1 Lithography process to reduce interference 审中-公开
标题翻译：光刻过程减少干扰
公开(公告)号：US20070087291A1
公开(公告)日：2007-04-19
申请号：US11252499
申请日：2005-10-18
申请人： Tsai-Sheng Gau , Jaw-Jung Shin , Chun-Kuang Chen , Jan-Wen You , Burn-Jeng Lin
发明人： Tsai-Sheng Gau , Jaw-Jung Shin , Chun-Kuang Chen , Jan-Wen You , Burn-Jeng Lin
IPC分类号： G03F7/20
CPC分类号： G03F7/70466 , G03F1/70 , G03F7/203 , G03F7/70425
摘要： A method and associated masks for carrying out a lithographic imaging process to reduce or avoid a strong interference effect in off-axis illumination, the method including providing a resist layer on a substrate; illuminating a first group of line patterns through a first mask on the resist layer; illuminating a second group of line patterns through a second mask on the resist layer, the second group of line patterns oriented nonparallel with respect to the first group of line patterns; and, developing the illuminated resist layer.
摘要翻译：一种用于进行光刻成像处理以减少或避免在离轴照明中的强干涉效应的方法和相关掩模，所述方法包括在基板上提供抗蚀剂层; 通过抗蚀剂层上的第一掩模照射第一组线图案; 通过抗蚀剂层上的第二掩模照射第二组线图案，第二组线条图案相对于第一组线图案取向不平行; 并且显影照射的抗蚀剂层。

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