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91. 发明授权

US07061065B2 Light emitting diode and method for producing the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07061065B2
公开(公告)日：2006-06-13
申请号：US10405811
申请日：2003-03-31
申请人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang , Chi-Ying Chiu
发明人： Ray-Hua Horng , Tung-Hsing Wu , Shao-Hua Huang , Chi-Ying Chiu
IPC分类号： H01L29/72
CPC分类号： H01L33/42 , H01L33/0079
摘要： The present invention discloses an LED (light emitting diode), which primarily includes a transparent window, such as a glass substrate, an LED epitaxial layer including at least an active layer, and a transparent conductive film formed between the transparent window and the LED epitaxial layer. The transparent conductive film can be oxides, nitrides or fluorides of metals, for example, ITO, InO, SnO, ZnO, etc. By involving the transparent conductive film, current spreading is improved and resistance is reduced because of larger cross section areas provided, particularly compared with the conventional spin on glass or polymer adhesives. Additionally, light-emitting efficiency can be improved since the conventional opaque substrate, such as a GaAs substrate on which the active layer is grown can be etched away after the transparent window and the active layer are combined with the transparent conductive film.
摘要翻译：本发明公开了一种LED（发光二极管），其主要包括透明窗，例如玻璃基板，至少包括有源层的LED外延层和形成在透明窗和LED外延层之间的透明导电膜层。透明导电膜可以是金属的氧化物，氮化物或氟化物，例如ITO，InO，SnO，ZnO等。通过涉及透明导电膜，提高了电流扩散，并且由于提供了更大的截面面积而阻止了电阻，特别是与传统的玻璃或聚合物粘合剂相比。另外，由于在透明窗口和有源层与透明导电膜组合之后，可以蚀刻常规的不透明衬底（例如其上生长有源层的GaAs衬底），可以蚀刻掉发光效率。

92. 发明授权

US07045375B1 White light emitting device and method of making same 有权
公开(公告)号：US07045375B1
公开(公告)日：2006-05-16
申请号：US11035647
申请日：2005-01-14
申请人： Tung-Hsing Wu , Ray-Hua Horng , Meng-Chai Wu
发明人： Tung-Hsing Wu , Ray-Hua Horng , Meng-Chai Wu
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L25/0753 , H01L33/08 , H01L33/508 , H01L2224/48091 , H01L2224/48137 , H01L2224/48471 , H01L2224/49107 , H01L2924/00014 , H01L2224/4554
摘要： A white-light emitting device comprising a first PRS-LED and a second PRS-LED. The first PRS-LED has a primary light source to emit blue light and a secondary light source to emit red light responsive to the blue light; and the second PRS-LED has a primary light source to emit green light and a secondary light source for emitting red light responsive to the green light. Each of the primary light sources is made from an InGaN layer disposed between a p-type GaN layer and an n-type GaN layer. The secondary light sources are made from AlGaInP. The primary light source and the secondary light source can be disposed on opposite sides of a sapphire substrate. Alternatively, the second light source is disposed on the n-type GaN layer of the primary light source. The second light sources may comprise micro-rods of AlGaInP of same or different compositions.

93. 发明申请

US20050226299A1 Vertical-cavity surface emitting laser diode 审中-公开
标题翻译：垂直腔表面发射激光二极管
公开(公告)号：US20050226299A1
公开(公告)日：2005-10-13
申请号：US11147760
申请日：2005-06-08
申请人： Ray-Hua Horng , Dong-Sing Wu
发明人： Ray-Hua Horng , Dong-Sing Wu
IPC分类号： H01L21/00 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/22
CPC分类号： H01S5/18311 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/0425 , H01S5/0614 , H01S5/18305 , H01S5/18341 , H01S5/18369 , H01S5/2081 , Y10S362/80
摘要： The present invention provides a VCSEL (vertical-cavity surface emitting laser) diode, in which a p-type cladding layer is formed on an active layer and surrounded with an insulation edge. An annular p-type electrode is formed on the ptype cladding layer close to the insulation edge and an upper DBR mirror is formed therewithin. According to the present invention, light beams emitting from the active layer will not be shielded by a central electrode and brightness of the laser diode is improved.
摘要翻译：本发明提供了一种VCSEL（垂直腔表面发射激光）二极管，其中在有源层上形成p型覆层并被绝缘边缘包围。在靠近绝缘边缘的p型覆层上形成环形p型电极，并在其中形成上DBR反射镜。根据本发明，从有源层发射的光束不会被中心电极屏蔽，并且提高了激光二极管的亮度。

94. 发明申请

US20050063437A1 Vertical-cavity surface emitting laser diode and method for producing the same 失效
公开(公告)号：US20050063437A1
公开(公告)日：2005-03-24
申请号：US10668553
申请日：2003-09-22
申请人： Ray-Hua Horng , Dong-Sing Wu
发明人： Ray-Hua Horng , Dong-Sing Wu
IPC分类号： H01L21/00 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/22
CPC分类号： H01S5/18311 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/0425 , H01S5/0614 , H01S5/18305 , H01S5/18341 , H01S5/18369 , H01S5/2081 , Y10S362/80
摘要： The present invention provides a vertical-cavity surface emitting laser (VCSEL) diode and a method for producing the same. In this method, an n-type and a p-type ohmic contact electrodes are previously disposed, and then two pairs of distributed Bragger reflectors (DBRs) are formed. At last, a permanent metal substrate is plated. According to the present invention, reflectivity of the DBRs can be preserved without damage during rapid thermal annealing, and thus brightness of the laser diode is improved.

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