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    • 95. 发明授权
    • Combined binary/decimal adder unit
    • 组合二进制/十进制加法器单元
    • US5928319A
    • 1999-07-27
    • US969244
    • 1997-11-13
    • Wilhelm HallerUlrich KrauchThomas LudwigHolger Wetter
    • Wilhelm HallerUlrich KrauchThomas LudwigHolger Wetter
    • G06F7/491G06F7/50
    • G06F7/4912G06F7/507
    • A combined binary/decimal adder unit reduces the operation delay ine processing binary coded decimal operands and permit an increased cycle rate of a processor unit in which the combined binary/decimal adder unit is utilized. Pre-sums are generated for each decimal digit position in parallel to the generation and distribution of the carries over the total of decimal digit positions of the adder unit. The pre-sums anticipate the carry-in of the decimal positions and the need to perform six corrections after the carry-out signal of the highest decimal digit position has been generated. The carry-out signal of each decimal digit position is used in combination with operation control signals to select the correct pre-sum of the digit position.
    • 组合的二进制/十进制加法器单元减少了处理二进制编码十进制操作数的操作延迟,并且允许使用组合的二进制/十进制加法单元的处理器单元的增加的周期速率。 对于加法器单元的十进制位数的总和的并行生成和分配,对于每个十进制数位置产生预和。 预计总和预期小数位置的进位,并且在产生了最高十进制位数的进位信号之后需要进行六次校正。 每个十进制位数的进位信号与操作控制信号组合使用,以选择数位位置的正确预置。
    • 96. 发明授权
    • CMOS integrated semiconductor circuit
    • CMOS集成半导体电路
    • US5744996A
    • 1998-04-28
    • US387705
    • 1995-07-17
    • Gunther KotzleVolker KreuterThomas LudwigHelmut Schettler
    • Gunther KotzleVolker KreuterThomas LudwigHelmut Schettler
    • G05F3/20H01L27/02H03K3/01
    • H01L27/0222G05F3/205
    • An integrated semiconductor circuit for reducing power consumption, employing CMOS technology in which a transistor pair can be operated stably at different supply voltages. At each supply voltage the transistors have an associated threshold voltage which can be set via the well and substrate bias voltages. The substrate of the transistor pair is connected to a substrate bias voltage generator circuit and the well is connected to a well bias voltage generator circuit. An input signal representing the level of the supply voltage sets the respective bias voltages corresponding to the level of the supply voltage. Thus, the threshold voltage of each transistor is adapted to the existing supply voltage, thereby ensuring stable operation of the transistor pair. A battery driven data processing system with the integrated semiconductor circuit can attain an approximate 100 fold extension of the operating time of the battery.
    • PCT No.PCT / DE93 / 00443 Sec。 371日期:1995年7月17日 102(e)日期1995年7月17日PCT提交1993年5月21日PCT公布。 出版物WO94 / 01890 日期1994年1月20日一种用于降低功耗的集成半导体电路,采用其中晶体管对能够在不同电源电压下稳定运行的CMOS技术。 在每个电源电压下,晶体管具有可通过阱和衬底偏置电压来设置的相关阈值电压。 晶体管对的基板连接到衬底偏置电压发生器电路,阱连接到阱偏置电压发生器电路。 表示电源电压电平的输入信号设定与电源电压的电平对应的各个偏置电压。 因此,每个晶体管的阈值电压适应于现有的电源电压,从而确保晶体管对的稳定工作。 具有集成半导体电路的电池驱动数据处理系统可以实现电池的工作时间的大约100倍的延长。