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    • 91. 发明申请
    • Zoom lens and image pickup apparatus equipped with same
    • 变焦镜头和摄像设备配备相同
    • US20090168195A1
    • 2009-07-02
    • US12315866
    • 2008-12-04
    • Masahito Watanabe
    • Masahito Watanabe
    • G02B15/14
    • G02B15/173G03B17/00
    • A zoom lens has, in order from the object side thereof, a positive first lens unit G1, a negative second lens unit G2, a positive third lens unit G3, a fourth lens unit G4, and an aperture stop S disposed closer to the image side than the second lens unit and closer to the object side than the lens surface closest to the image side in the third lens unit, wherein during zooming from the wide angle end to the telephoto end, the distance between the first lens unit G1 and the second lens unit G2 is larger at the telephoto end than at the wide angle end, the distance between the second lens unit G2 and the third lens unit G3 is smaller at the telephoto end than at the wide angle end, the distance between the third lens unit G3 and the fourth lens unit G4 changes, and the first lens unit G1, the third lens unit G3 and the aperture stop S move in such a way that they are located closer to the object side at the telephoto end than at the wide angle end. The zoom lens satisfies prescribed conditional expressions.
    • 变焦透镜从物体侧依次具有正的第一透镜单元G1,负的第二透镜单元G2,正的第三透镜单元G3,第四透镜单元G4和靠近图像设置的孔径光阑S 并且比在第三透镜单元最靠近图像侧的透镜表面更靠近物体侧,其中在从广角端到望远端的变焦期间,第一透镜单元G1和第二透镜单元G1之间的距离 第二透镜单元G2在望远端比在广角端大,第二透镜单元G2与第三透镜单元G3之间的距离在望远端比在广角端小,第三透镜 单元G3和第四透镜单元G4改变,并且第一透镜单元G1,第三透镜​​单元G3和孔径光阑S以这样的方式移动,使得它们在望远端处比在广角处更靠近物体侧 结束。 变焦透镜满足规定的条件表达式。
    • 97. 发明授权
    • Apparatus and method of growing single crystal of semiconductor
    • 生长半导体单晶的装置和方法
    • US06497761B2
    • 2002-12-24
    • US09800027
    • 2001-03-06
    • Masahito WatanabeMinoru Eguchi
    • Masahito WatanabeMinoru Eguchi
    • C30B1520
    • C30B15/305Y10S117/917Y10T117/10
    • An apparatus for growing a single crystal of semiconductor is provided, which makes it possible to grow a heavy single crystal of semiconductor of 100 kg or greater in weight even if a growing single crystal contains a neck. In the apparatus, the first and second electrodes are provided such that the first ends of the first and second electrodes are electrically connected to the power supply and the second ends of the first and second electrodes are contacted with the melt in the crucible. During the growth process, a specific voltage is applied across the first ends of the first and second electrodes, thereby forming the electrical current path interconnecting the second ends of the first and second electrodes in the melt. The magnetic field is generated with the magnetic field generator to intersect with the electrical current path in the melt. No electric current flows through the growing single crystal from the melt.
    • 提供了用于生长半导体单晶的装置,这使得即使生长的单晶含有颈部,也可以生长重量为100kg或更大的重型半导体单晶。 在该装置中,第一和第二电极设置成使得第一和第二电极的第一端电连接到电源,并且第一和第二电极的第二端与坩埚中的熔体接触。 在生长过程中,在第一和第二电极的第一端上施加特定电压,从而形成将熔融物中的第一和第二电极的第二端互连的电流通路。 磁场发生器产生的磁场与熔体中的电流通路相交。 没有电流从熔体流过生长的单晶。
    • 100. 发明授权
    • Sound absorbing device for sound insulation wall
    • 隔音墙吸声装置
    • US5329073A
    • 1994-07-12
    • US89529
    • 1993-07-21
    • Yutaka ShonoMasahito WatanabeKohei YamamotoNaoyuki Furuta
    • Yutaka ShonoMasahito WatanabeKohei YamamotoNaoyuki Furuta
    • E01F8/00E01F8/02G10K11/00
    • E01F8/007E01F8/027
    • A sound absorbing material is interposed between an outer perforated plate and an inner plate to constitute a sound absorbing body, which has a bottom wall portion extending generally vertically, a hood portion laterally bulging from the top of the bottom wall portion to assume a semi-circular cross-section, and a top wall portion extending from the hood portion to assume a gentle convex cross-section. A cap is attached to the end face of the top wall portion, and a fixing member is attached to a lower portion of the bottom wall portion to constitute a sound absorbing device. The two sound absorbing devices having the identical structure are fixed to the outer surfaces of an upper portion of an upright sound insulation wall through the fixing members so as to assume a symmetrical fixing posture. The caps of the two sound absorbing devices are connected by a connecting member. Alternatively, a gap is formed between the caps and a space suitable for planting is defined by a top surface of the sound insulation wall and the two inner plates.
    • 吸声材料插入在外多孔板和内板之间以构成吸声体,该吸音体具有大致垂直延伸的底壁部,从底壁部分的顶部侧向膨胀的罩部, 圆形横截面,以及从罩部分延伸以呈现平缓的凸形横截面的顶壁部分。 在顶壁部的端面安装盖,在底壁部的下部安装固定部件,构成吸音装置。 具有相同结构的两个吸声装置通过固定构件固定到直立隔音壁的上部的外表面,以呈现对称的固定姿势。 两个吸音装置的盖通过连接构件连接。 或者,在盖之间形成间隙,并且适合于种植的空间由隔音壁和两个内板的顶表面限定。