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91. 发明授权

US06696879B1 Radio frequency data communications device 失效
标题翻译：射频数据通信设备
公开(公告)号：US06696879B1
公开(公告)日：2004-02-24
申请号：US09718325
申请日：2000-11-22
申请人： James E. O'Toole , John R. Tuttle , Mark E. Tuttle , Tyler Lowrey , Kevin M. Devereaux , George E. Pax , Brian P. Higgins , David K. Ovard , Shu-Sun Yu , Robert R. Rotzoll
发明人： James E. O'Toole , John R. Tuttle , Mark E. Tuttle , Tyler Lowrey , Kevin M. Devereaux , George E. Pax , Brian P. Higgins , David K. Ovard , Shu-Sun Yu , Robert R. Rotzoll
IPC分类号： G06F744
CPC分类号： G06K19/0716 , G06K7/0008 , G06K7/10059 , G06K19/0707 , G06K19/0712 , G06K19/0723 , G06K19/0726 , G06K19/07758 , H03L7/0995 , H03L7/148
摘要： A frequency doubler includes a first Gilbert cell, a second Gilbert cell coupled to the first Gilbert cell, a frequency generator configured to apply a first sinusoidal wave to the first Gilbert cell, and a phase shifter applying a sinusoidal wave shifted from the first sinusoidal wave to the second Gilbert cell. A method of doubling frequency without using a feedback loop includes providing a first Gilbert cell, providing a second Gilbert cell coupled to the first Gilbert cell, applying a first sinusoidal wave to the first Gilbert cell, and applying a sinusoidal wave shifted from the first sinusoidal wave to the second Gilbert cell.
摘要翻译：倍频器包括第一吉尔伯特单元，耦合到第一吉尔伯特单元的第二吉尔伯特单元，被配置为向第一吉尔伯特单元施加第一正弦波的频率发生器，以及施加从第一正弦波移位的正弦波的移相器到第二个吉尔伯特细胞。不使用反馈回路的频率加倍的方法包括提供第一吉尔伯特单元，提供耦合到第一吉尔伯特单元的第二吉尔伯特单元，向第一吉尔伯特单元施加第一正弦波，以及施加从第一正弦波移位的正弦波波到第二个吉尔伯特细胞。

92. 发明授权

US06625054B2 Method and apparatus to program a phase change memory 失效
标题翻译：编程相变存储器的方法和装置
公开(公告)号：US06625054B2
公开(公告)日：2003-09-23
申请号：US10034146
申请日：2001-12-28
申请人： Tyler Lowrey , Manzur Gill
发明人： Tyler Lowrey , Manzur Gill
IPC分类号： G11C1100
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/0069 , G11C2013/0092
摘要： Briefly, in accordance with an embodiment of the invention, a method and an apparatus to program a multi level cell (MLC) phase change material is provided.
摘要翻译：简而言之，根据本发明的实施例，提供了一种编程多级单元（MLC）相变材料的方法和装置。

93. 发明授权

US06617192B1 Electrically programmable memory element with multi-regioned contact 有权
标题翻译：具有多区域接触的电可编程存储元件
公开(公告)号：US06617192B1
公开(公告)日：2003-09-09
申请号：US09677957
申请日：2000-10-03
申请人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
发明人： Tyler Lowrey , Stephen J. Hudgens , Patrick J. Klersy
IPC分类号： H01L2100
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.
摘要翻译：一种电操作的存储元件，其具有与可编程为至少第一电阻状态和第二电阻状态的存储器材料电连通的触点。优选地，触点至少包括具有第一电阻率的第一区域和具有大于第一电阻率的第二电阻率的第二区域，其中较大电阻区域与存储材料相邻。

94. 发明授权

US06600428B1 Radio frequency data communications device 失效
公开(公告)号：US06600428B1
公开(公告)日：2003-07-29
申请号：US09151359
申请日：1998-09-10
申请人： James E. O'Toole , John R. Tuttle , Mark E. Tuttle , Tyler Lowrey , Kevin M. Devereaux , George E. Pax , Brian P. Higgins , David K. Ovard , Shu-Sun Yu , Robert R. Rotzoll
发明人： James E. O'Toole , John R. Tuttle , Mark E. Tuttle , Tyler Lowrey , Kevin M. Devereaux , George E. Pax , Brian P. Higgins , David K. Ovard , Shu-Sun Yu , Robert R. Rotzoll
IPC分类号： H04Q700
CPC分类号： G06K19/0716 , G06K7/0008 , G06K7/10059 , G06K19/0707 , G06K19/0712 , G06K19/0723 , G06K19/0726 , G06K19/07749 , G06K19/07758 , G06K2017/0051 , H01Q1/2225 , H03L7/0995 , H03L7/148
摘要： A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.

95. 发明授权

US06531373B2 Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements 有权
标题翻译：在硫族化物元素中使用绝缘体上硅绝缘体形成相变存储单元的方法
公开(公告)号：US06531373B2
公开(公告)日：2003-03-11
申请号：US09751485
申请日：2000-12-27
申请人： Manzur Gill , Tyler Lowrey
发明人： Manzur Gill , Tyler Lowrey
IPC分类号： H01L2176
CPC分类号： G11C13/0004 , G11C13/003 , G11C2213/74 , G11C2213/79 , H01L27/12 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1683
摘要： The invention relates to a phase-change memory device that uses SOI in a chalcogenide volume of memory material. Parasitic capacitance, both vertical and lateral, are reduced or eliminated in the inventive structure.
摘要翻译：本发明涉及在存储材料的硫族化物体积中使用SOI的相变存储器件。寄生电容（垂直和横向）在本发明的结构中被减少或消除。

96. 发明授权

US06501111B1 Three-dimensional (3D) programmable device 有权
标题翻译：三维（3D）可编程设备
公开(公告)号：US06501111B1
公开(公告)日：2002-12-31
申请号：US09608162
申请日：2000-06-30
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： H01L2976
CPC分类号： G11C13/0004 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1675
摘要： A three-dimensional (3D) memory device having polysilicon diode isolation elements for chalcogenide memory cells and method for fabricating the same are described. The memory device includes a plurality of stacked memory cells to form a three-dimensional (3D) memory array. The memory device also includes a polysilicon diode isolation element to select a chalcogenide memory cell. The memory device is fabricated by forming a plurality of chalcogenide memory cells on a base insulator. The memory device is also fabricated by forming a polysilicon diode isolation element to select a chalcogenide memory cell.
摘要翻译：描述了具有用于硫族化物存储单元的多晶硅二极管隔离元件的三维（3D）存储器件及其制造方法。存储器件包括多个层叠的存储器单元以形成三维（3D）存储器阵列。存储器件还包括多晶硅二极管隔离元件以选择硫族化物存储单元。存储器件通过在基极绝缘体上形成多个硫族化物存储单元来制造。还通过形成多晶硅二极管隔离元件来选择硫族化物存储单元来制造存储器件。

97. 发明授权

US06384648B1 Radio frequency data communications device 有权
公开(公告)号：US06384648B1
公开(公告)日：2002-05-07
申请号：US09550647
申请日：2000-04-14
申请人： James E. O'Toole , John R. Tuttle , Mark E. Tuttle , Tyler Lowrey , Kevin M. Devereaux , George E. Pax , Brian P. Higgins , David K. Ovard , Shu-Sun Yu , Robert R. Rotzoll
发明人： James E. O'Toole , John R. Tuttle , Mark E. Tuttle , Tyler Lowrey , Kevin M. Devereaux , George E. Pax , Brian P. Higgins , David K. Ovard , Shu-Sun Yu , Robert R. Rotzoll
IPC分类号： H03L7099
CPC分类号： G06K19/0716 , G06K7/0008 , G06K7/10059 , G06K19/0707 , G06K19/0712 , G06K19/0723 , G06K19/0726 , G06K19/07749 , G06K19/07758 , G06K2017/0051 , H01Q1/2225 , H03L7/0995 , H03L7/148
摘要： A radio frequency identification device comprises an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.

98. 发明授权

US06351190B1 Stage having controlled variable resistance load circuit for use in voltage controlled ring oscillator 有权
标题翻译：具有控制可变电阻负载电路的阶段用于压控环形振荡器
公开(公告)号：US06351190B1
公开(公告)日：2002-02-26
申请号：US09568085
申请日：2000-05-09
申请人： James E. O'Toole , John R. Tuttle , Mark E. Tuttle , Tyler Lowrey , Kevin M. Devereaux , George E. Pax , Brian P. Higgins , Shu-Sun Yu , David K. Ovard , Robert R. Rotzoll
发明人： James E. O'Toole , John R. Tuttle , Mark E. Tuttle , Tyler Lowrey , Kevin M. Devereaux , George E. Pax , Brian P. Higgins , Shu-Sun Yu , David K. Ovard , Robert R. Rotzoll
IPC分类号： H03B502
CPC分类号： G06K19/0716 , G06K7/0008 , G06K7/10059 , G06K19/0707 , G06K19/0712 , G06K19/0723 , G06K19/0726 , G06K19/07749 , G06K19/07758 , G06K2017/0051 , H01Q1/2225 , H03L7/0995 , H03L7/148
摘要： A stage for a voltage controlled oscillator includes a first p-channel transistor having a gate defining a control node, having a source adapted to be coupled to a supply voltage, and having a drain; a second p-channel transistor having a gate coupled to the control node, having a source coupled to the supply voltage, and having a drain; a first n-channel transistor having a gate defining a first input, having a drain coupled to the drain of the first p-channel transistor and defining a first node, and having a source; a second n-channel transistor having a gate defining a second input, having a drain coupled to the drain of the second p-channel transistor and defining a second node, and having a source; a current draw; first and second loads; a first source follower having an input coupled to the first node; and a second source follower.
摘要翻译：用于压控振荡器的级包括具有限定控制节点的栅极的第一p沟道晶体管，其具有适于耦合到电源电压并具有漏极的源极; 第二p沟道晶体管，其具有耦合到所述控制节点的栅极，具有耦合到所述电源电压的源极并具有漏极; 第一n沟道晶体管，其具有限定第一输入的栅极，具有耦合到第一p沟道晶体管的漏极并限定第一节点并具有源极的漏极; 具有限定第二输入的栅极的第二n沟道晶体管，具有耦合到所述第二p沟道晶体管的漏极并限定第二节点并具有源极的漏极; 当前抽奖第一和第二载荷; 具有耦合到所述第一节点的输入的第一源极跟随器; 和第二源跟随器。

99. 发明授权

US06198357B1 Stage having controlled variable resistance load circuit for use in voltage controlled ring oscillator 有权
标题翻译：具有控制可变电阻负载电路的阶段用于压控环形振荡器
公开(公告)号：US06198357B1
公开(公告)日：2001-03-06
申请号：US09153014
申请日：1998-09-14
申请人： James E. O'Toole , John R. Tuttle , Mark E. Tuttle , Tyler Lowrey , Kevin M. Devereaux , George E. Pax , Brian P. Higgins , David K. Ovard , Shu-Sun Yu , Robert R. Rotzoll
发明人： James E. O'Toole , John R. Tuttle , Mark E. Tuttle , Tyler Lowrey , Kevin M. Devereaux , George E. Pax , Brian P. Higgins , David K. Ovard , Shu-Sun Yu , Robert R. Rotzoll
IPC分类号： H03B502
CPC分类号： G06K19/0716 , G06K7/0008 , G06K7/10059 , G06K19/0707 , G06K19/0712 , G06K19/0723 , G06K19/0726 , G06K19/07749 , G06K19/07758 , G06K2017/0051 , H01Q1/2225 , H03L7/0995 , H03L7/148
摘要： A stage for a ring oscillator, the stage including a first p-channel transistor having a gate defining a control node, having a source adapted to be coupled to a supply voltage, and having a drain; a second p-channel transistor having a gate coupled to the control node, having a source coupled to the supply voltage, and having a drain; a first n-channel transistor having a gate defining a first input, having a drain coupled to the drain of the first p-channel transistor and defining a first node, and having a source; a second n-channel transistor having a gate defining a second input, having a drain coupled to the drain of the second p-channel transistor and defining a second node, and having a source; a current source coupled to the sources of the first and second n-channel transistors directing current from the sources of the first and second n-channel transistors; a first resistor coupled between the supply voltage and the drain of the first n-type transistor; a second resistor coupled between the supply voltage and drain of the second n-type transistor; a first source follower having an input coupled to the first node and having an output defining a first output of the stage; and a second source follower having an input coupled to the second node and having an output defining a second output of the stage.
摘要翻译：用于环形振荡器的级，该级包括具有限定控制节点的栅极的第一p沟道晶体管，其具有适于耦合到电源电压并具有漏极的源极; 第二p沟道晶体管，其具有耦合到所述控制节点的栅极，具有耦合到所述电源电压的源极并具有漏极; 第一n沟道晶体管，其具有限定第一输入的栅极，具有耦合到第一p沟道晶体管的漏极并限定第一节点并具有源极的漏极; 具有限定第二输入的栅极的第二n沟道晶体管，具有耦合到所述第二p沟道晶体管的漏极并限定第二节点并具有源极的漏极; 耦合到所述第一和第二n沟道晶体管的源极的电流源，其引导来自所述第一和第二n沟道晶体管的源极的电流; 耦合在第一n型晶体管的电源电压和漏极之间的第一电阻器; 耦合在第二n型晶体管的电源电压和漏极之间的第二电阻器; 第一源跟随器，具有耦合到所述第一节点并具有定义所述级的第一输出的输出的输入; 以及第二源极跟随器，其具有耦合到所述第二节点并且具有限定所述平台的第二输出的输出的输入。

100. 发明授权

US6060783A Self-aligned contact plugs 有权
标题翻译：自对准接触插头
公开(公告)号：US6060783A
公开(公告)日：2000-05-09
申请号：US225593
申请日：1999-01-06
申请人： Werner Juengling , Kirk Prall , Gordon Haller , David Keller , Tyler Lowrey
发明人： Werner Juengling , Kirk Prall , Gordon Haller , David Keller , Tyler Lowrey
IPC分类号： H01L21/28 , H01L21/60 , H01L21/768 , H01L21/8242 , H01L23/485 , H01L23/48
CPC分类号： H01L27/10888 , H01L21/28 , H01L21/768 , H01L21/76897 , H01L23/485 , H01L2924/0002 , Y10S438/978
摘要： Within an integrated circuit, a contact plug with a height not extending above the level of the gate/wordline nitride is nonetheless provided with a relatively large contact area or landing pad, significantly larger than the source/drain region to which the contact plug is electrically connected. Methods for producing the inventive contact plug include (1) use of a nitride facet etch, either (a) during a nitride spacer formation etch or (b) during a BPSG etch; (2) using at least one of (a) an isotropic photoresist etch or partial descum to narrow BPSG spacers above the gate/wordline nitride, and (b) a nitride step etch to etch the shoulder area of the gate/wordline nitride exposed by a BPSG etch; and (3) polishing a BPSG layer down to the top of a gate/wordline nitride before any doped polysilicon plug fill, masking for BPSG etch and performing a BPSG etch, etching the photoresist layer through a partial descum, and etching the shoulder area of the gate/wordline nitride exposed thereby.
摘要翻译：在集成电路中，具有不延伸在栅极/字线氮化物的高度之上的高度的接触插塞仍然设置有相对较大的接触面积或着陆焊盘，其明显大于接触插塞电接触的源极/漏极区域连接的。用于制造本发明接触塞的方法包括（1）在氮化物间隔物形成蚀刻期间使用氮化物刻面蚀刻（a）或（b）在BPSG蚀刻期间; （2）使用（a）各向同性光致抗蚀剂蚀刻或部分除去中的至少一种来窄化栅极/字线氮化物之上的BPSG间隔区，以及（b）氮化物步骤蚀刻以蚀刻暴露于栅极/字线氮化物的肩部区域 BPSG蚀刻; 并且（3）在任何掺杂的多晶硅插塞填充之前将BPSG层向下抛光到栅极/字线氮化物的顶部，掩蔽用于BPSG蚀刻和执行BPSG蚀刻，通过部分除去蚀刻光致抗蚀剂层，并蚀刻栅极/字线氮化物被曝光。

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