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91. 发明专利

JPS60213059A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS60213059A
公开(公告)日：1985-10-25
申请号：JP7119284
申请日：1984-04-09
申请人： Mitsubishi Electric Corp
发明人： KOTANI HIDEO , MATSUDA SHIYUUICHI , OKAMOTO TATSUROU
IPC分类号： H01L23/52 , H01L21/28 , H01L21/3205 , H01L29/43 , H01L29/45
CPC分类号： H01L29/456
摘要： PURPOSE:To prevent the generation of a hillock shaped on the formation of a CVD film while increasing the electro-migration resistance of a wiring by previously forming diffusion layer consisting of a titanium group metal to the surface of the wiring after shaping a predetermined pattern. CONSTITUTION:A metallic thin-film 5 composed of TiW or TiSi is formed on a wiring 2 shaped on a semiconductor substrate 1 according to a prescribed pattern through a sputtering method. A diffusion layer 6 consisting of TiW or TiSi is shaped on the surface of the wiring 2 through heating. The residual metallic thin-film 5 on the outside of the diffusion layer 6 is removed through plasma etching, etc. Lastly, a CVD film 3 covering the diffusion layer 6 is applied on the semiconductor substrate 1, and the substrate is insulated and protected.
摘要翻译：目的：为了防止在形成CVD膜的同时，通过在成形预定图案之后预先形成由钛族金属构成的扩散层到布线的表面，同时增加布线的电迁移电阻，从而形成形成CVD膜的小丘。构成：通过溅射法，在根据规定图案形成在半导体衬底1上的布线2上形成由TiW或TiSi构成的金属薄膜5。由TiW或TiSi构成的扩散层6通过加热在配线2的表面成形。通过等离子体蚀刻等除去扩散层6外侧的残留金属薄膜5.最后，将覆盖扩散层6的CVD膜3涂敷在半导体基板1上，对基板进行绝缘保护。

92. 发明专利

JPS60168535A PHOTOCHEMICAL REACTION APPARATUS 失效
公开(公告)号：JPS60168535A
公开(公告)日：1985-09-02
申请号：JP2645184
申请日：1984-02-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOTANI HIDEO , IKEDA TATSUHIKO , ITOU HIROMI
IPC分类号： B01J19/12 , C23C16/48
摘要： PURPOSE:To stably succeed photochemical reaction on a substrate over a long time, by providing a reflective mirror in the side opposite to a reaction container of a light source and making the transmitted luminous flux density of a transparent window smaller than irradiated luminous flux density onto the substrate. CONSTITUTION:In an apparatus for generating photochemical reaction on a substrate 5 constituted so that reaction gas is introduced into a reaction container 1 having a transparent window 2 and the substrate 5 placed in the reaction container 1 is irradiated with light from the light source 6 in the outside through the transparent window 2, a reflective mirror 8 is provided in the side opposite to the reaction container 1 of the light source 6 and the transmitted luminous flux density of the transparent window 2 is made smaller than irradiated luminous flux density onto the substrate 5. As a result, the accumulation and adhesion of the reaction product to the inner surface of the transparent window 2 is reduced and transparency can be kept and photochemical reaction on the substrate can be stably succeeded over a long time.

93. 发明专利

JPS60166031A DEVICE FOR FORMING FILM UTILIZING PHOTOCHEMICAL REACTION 失效
公开(公告)号：JPS60166031A
公开(公告)日：1985-08-29
申请号：JP2325084
申请日：1984-02-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： HATANAKA MASAHIRO , KOTANI HIDEO , IKEDA TATSUHIKO
IPC分类号： B01J19/12
摘要： PURPOSE:To maintain transparency of a light incident window and to permit efficient formation of uniform film on a target substrate by melting deposited reaction products on a transparent plate covering the light incident window with laser light and removing the melted deposits by blowing inert gas. CONSTITUTION:Gaseous reactant is introduced into a reaction vessel provided with a light incident window 2 sealed gas-tightly with a transparent plate, and a substrate 5 housed in the vessel 1 is irradiated with incident light from outside through the window 2 to cause photochemical reaction of the gaseous reactant, and the reaction products are deposited on the substrate 5. In this device, the photochemical reaction products deposited on the inside surface of the transparent plate covering the window 2 are melted by irradiating with laser light, and, at the same time, the melted reaction products are removed by blowing inert gas introduced into the vessel 1, to the inside surface of the transparent plate. By this process, the transparency of the light incident window is maintained and a uniform film is formed efficiently on the substrate.

94. 发明专利

JPS59215741A Manufacture of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造
公开(公告)号：JPS59215741A
公开(公告)日：1984-12-05
申请号：JP9275883
申请日：1983-05-24
申请人： Mitsubishi Electric Corp
发明人： TSUKAMOTO KATSUHIRO , KOTANI HIDEO
IPC分类号： H01L21/76 , H01L21/331 , H01L21/762 , H01L29/73 , H01L29/72
CPC分类号： H01L21/76237
摘要： PURPOSE:To enable to obtain an interelement isolating region having a flat surface and moreover formed fine by a method wherein interelement isolating grooves are formed, and an insulating material is buried in the grooves thereof. CONSTITUTION:An n type buried layer 3 is formed on a p type Si substrate 1, and an n type epitaxial layer 4 is grown thereon. After an Si film 5 is grown on the surface, the parts to act as the active regions of elements are covered with a photo resist 9. Then the film 5, the layer 4 and the layer 3 are etched using the resist 9 as a mask to form interelement isolating grooves 18. Then p type channel cut regions 19 are formed. Then the resist 9 is removed, and after an Si oxide film 5a is formed on the surface, an insulating film 20 is deposited. Then a solution type insulator 21 is applied. The surface is flattened completely in such a way. After then, the film 21 is calcined to be converted into an Si oxide film by performing heat treatment. Then the flattened film 20 and the Si oxide film obtained by calcining the film 21 are etched. Thus the interelement isolating region of structure buried with the Si oxide films in the grooves 18 is completed. Accordingly, a bird beak and a level difference are removed.
摘要翻译：目的：为了获得具有平坦表面的元件隔离区域，并且还通过形成有多个隔离隔离槽的方法形成微细的绝缘材料，并且将绝缘材料埋入其凹槽中。构成：在p型Si衬底1上形成n +型埋层3，在其上生长n型外延层4。在表面上生长Si膜5之后，用光致抗蚀剂9覆盖用作元件的有源区的部分。然后使用抗蚀剂9作为掩模蚀刻膜5，层4和层3 以形成互补隔离槽18.然后形成p +型通道切割区域19。然后去除抗蚀剂9，并且在表面上形成Si氧化物膜5a之后，沉积绝缘膜20。然后施加溶液型绝缘体21。表面以这种方式完全平坦化。然后，通过进行热处理，将膜21煅烧成Si氧化膜。然后，对通过煅烧膜21获得的扁平薄膜20和Si氧化膜进行蚀刻。因此，完成了在凹槽18中与Si氧化物膜一起埋藏的结构的元件隔离区域。因此，除去鸟喙和水平差。

95. 发明专利

JPS59108317A Forming method of electrode wiring 失效
标题翻译：电极接线形成方法
公开(公告)号：JPS59108317A
公开(公告)日：1984-06-22
申请号：JP21997682
申请日：1982-12-13
申请人： Mitsubishi Electric Corp
发明人： TSUKAMOTO KATSUHIRO , KOTANI HIDEO
IPC分类号： H01L21/3205 , H01L21/28
CPC分类号： H01L21/28
摘要： PURPOSE:To form the flat electrode wiring with no stepped difference section through etching by implanting oxygen or nitrogen ions to the exposed section of a first metallic thin-film while using a second thin-film, to which an electrode wiring pattern is formed, as a mask and changing the exposed section into an insulating thin-film. CONSTITUTION:An aluminum thin-film 2 as an electrode material is formed on a semiconductor base body 1, the electrode wiring pattern of photoresists 3 is formed on the thin-film 2 by using phototype process technique, and oxygen ions 5 are implanted onto the exposed aluminum thin-film 2 while using the pattern as the mask. It is preferable that the energy of the oxygen ions extends over a range in which ions are implanted to the whole film thickness of the aluminum thin-film 2. The photo-resists 3 are removed, and the base body is thermally treated in an atmosphere at 100-500 deg.C in order to combine the thin-film 2 and oxygen ion-implanted and form aluminum oxide. Accordingly, the flat electrode wiring in which wiring sections are formed by the aluminum thin-films 21 and other sections by aluminum oxide 6 can be formed.
摘要翻译：目的：通过在使用形成电极布线图案的第二薄膜将氧或氮离子注入到第一金属薄膜的暴露部分的同时通过蚀刻来形成没有阶梯差分部分的平面电极布线作为将曝光部分变成绝缘薄膜。构成：在半导体基体1上形成作为电极材料的铝薄膜2，通过使用光刻工艺技术在薄膜2上形成光致抗蚀剂3的电极配线图案，将氧离子5注入到曝光铝薄膜2，同时使用图案作为掩模。优选的是，氧离子的能量在离子注入到铝薄膜2的整个膜厚的范围内延伸。除去光致抗蚀剂3，并将基体在大气中进行热处理在100-500℃下，为了组合薄膜2和离子注入氧而形成氧化铝。因此，可以形成其中由铝薄膜21形成布线部分的平面电极布线和由氧化铝6形成的其它部分。

96. 发明专利

JPS5963722A Processor for semiconductor device 失效
标题翻译：半导体器件处理器
公开(公告)号：JPS5963722A
公开(公告)日：1984-04-11
申请号：JP17555082
申请日：1982-10-04
申请人： Mitsubishi Electric Corp
发明人： KOTANI HIDEO , TSUKAMOTO KATSUHIRO
IPC分类号： H01L21/20 , C23C16/04 , H01L21/205 , H01L21/22 , H01L21/302 , H01L21/31
CPC分类号： C23C16/047 , H01L21/02532 , H01L21/0262
摘要： PURPOSE:To obtain a thin film pattern of high accuracy in a short time by a method wherein a semiconductor substrate in a reactive fluid atmosphere is irradiated with a laser light by deflecting it on electro-optical manner. CONSTITUTION:An optical system 10 has a group of lenses, adjusts the light quantity or the light direction from a laser light source 1, deflect the laser light e.g. by applying an electric field thereto by means of a deflector 11, makes the light draw a required pattern on the substrate 4 in the reactive gas atmosphere, puts the gas in photochemical reaction, and accordingly a thin film is deposited. This constitution enables to obtain the thin film pattern of high accuracy in a short time.
摘要翻译：目的：通过以反光液体气氛中的半导体衬底以电光方式偏转而用激光照射的方法在短时间内获得高精度的薄膜图案。构成：光学系统10具有一组透镜，从激光光源1调节光量或光的方向，使激光例如偏转。通过借助于偏转器11向其施加电场，使光在反应气体气氛中在基板4上吸引所需的图案，使气体进行光化学反应，因此沉积薄膜。该结构能够在短时间内获得高精度的薄膜图案。

97. 发明专利

JPS5895863A MANUFACTURE OF SEMICONDUCTOR DEVICE USING LAMINATED STRUCTURE 失效
公开(公告)号：JPS5895863A
公开(公告)日：1983-06-07
申请号：JP19472181
申请日：1981-11-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAKUSHIJI HISAO , KOTANI HIDEO , SAKURAI HIROMI , TSUKAMOTO KATSUHIRO , OOGA HIROTOMO
IPC分类号： H01L27/00 , H01L21/20 , H01L27/06
摘要： PURPOSE:To manufacture an integrated circuit characterized by high density, high degree of integration, excellent characteristics of elements, and high reliability, by forming memory elements and the like at the upper layer part, and forming the elements other than the memory elements at the lower parts. CONSTITUTION:As a method for improving the crystal property at the upper layer part 4, low temperature annealing is performed by laser annealing method and the like after the formation of said region. Namely, in the manufacture of the element having the laminated structure, the material having the equivalent or better crystal property as that of a substrate or the lower parts is formed at the upper layer part. In this way, the memory elements or high speed operation elements, in which the excellent crystal property is required, can be formed even in the upper part. Therefore, the memory elements, high speed operation elements, and the like can be concentrated in the upper part region, and the other element can be arranged in the lower layer parts.

98. 发明专利

JPS5895840A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5895840A
公开(公告)日：1983-06-07
申请号：JP19470481
申请日：1981-11-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKAMOTO KATSUHIRO , KOTANI HIDEO , YAKUSHIJI HISAO , HARADA HIROTSUGU
IPC分类号： H01L21/768 , H01L21/88
摘要： PURPOSE:To improve the coverage of a step, and to bore a through-hole easily by forming thick phosphorus glass onto a thin silicon nitride film, which is shaped through a plasma CVD method, through a CVD method or a decompression CVD method and sputtering and etching a layer insulating film. CONSTITUTION:The silicon nitride film 5 is formed onto a semiconductor base body 1, to which the electrode wiring 3 of the first layer is shaped, through the plasma CVD method. The thick phosphorus glass film 6 is molded through the CVD method or the decompression CVD method. The phosphorus glass film 6 is etched by the etching liquid of an HF group while usig a photo-resist 7 formed through photoengraving as a mask in order to bore the through-hole contacted with the electrode wiring of the first layer. The photo-resist 7 used as the etching-mask of the phosphorus glass film 6 is removed, and the silicon nitride film 5 of the through-hole section is etched through sputtering and etching while the surface of the phosphorus glass film 6 is etched only by predetermined film thickness.

99. 发明专利

JPS5890741A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5890741A
公开(公告)日：1983-05-30
申请号：JP19110481
申请日：1981-11-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUKAWA TAKAYUKI , YAMANO TAKESHI , KOTANI HIDEO
IPC分类号： H01L27/00 , H01L21/28 , H01L21/3205 , H01L23/52 , H01L27/12
摘要： PURPOSE:To simplify formation of interlayer wiring layers and prevent disconnection by providing a through hole, which is extending to the bottom, to a stacking body of a semiconductor layer and interlayer insulation film on which a semiconductor device is formed and by forming opposite conductivity type diffusion region to a semiconductor layer around said through hole. CONSTITUTION:An n layer 3, wiring separation insulating film 2, electrode 5 of n layer 3 and interlayer insulation film 4 are formed on a p type Si substrate. Thereafter, a p layer 6 is stacked and a through hole 12 is provided. The n layers 11, 8 are formed around the hole 12 and on the n layer 6, thereafter a wiring separation insulating film 7, layer 11, electrode 9 of the n layer 8 and an interlayer insulation film 10 are formed, thus completing a title device. According to this constitution, the diffusion process under a high temperature is not employed and a crystal defect is not generated and the interlayer wiring is simplified thereby preventing disconnection of wirings.

100. 发明专利

JPS5887848A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5887848A
公开(公告)日：1983-05-25
申请号：JP18729181
申请日：1981-11-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUKAWA TAKAYUKI , KOTANI HIDEO , YAMANO TAKESHI
IPC分类号： H01L21/3205 , H01L21/88
摘要： PURPOSE:To form a fine contact part having no step difference by a method wherein a contact hole having through-hole structure at the semiconductor device is buried with a conductor. CONSTITUTION:The conductor 7 is buried in the contact hole part 5. The contact hole part 5 is formed by ion beam etching, for example, and the conductor 7 is stacked by the ion beam. According to this invention, because the device is made to have structure to bury the conductor 7 in the contact hole part 5, no step difference exists at the contact part 5, and fine and high reliable contact can be obtained.

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