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91. 发明授权

US07959778B2 Sensor control apparatus and method 有权
标题翻译：传感器控制装置及方法
公开(公告)号：US07959778B2
公开(公告)日：2011-06-14
申请号：US11518945
申请日：2006-09-12
申请人： Hiroshi Inagaki , Yoshinori Inoue
发明人： Hiroshi Inagaki , Yoshinori Inoue
IPC分类号： G01N27/406
CPC分类号： G01N27/417
摘要： A sensor control apparatus comprising an air/fuel ratio sensor having a sensor cell with a pair of electrodes, a current source capable of supplying a predetermined current between the electrodes, a current control section that turns on/off the current source, a voltage detecting section that detects voltages generated between the electrodes at respective times when the current source is turned on and off, a differential voltage detecting section that detects a differential voltage between the voltages that are generated at the respective times when the current source is turned on and off, a first voltage comparing section that compares the differential voltage with a first threshold voltage, and a half-activated state determining section that determines that the sensor cell has reached a half-activated state when the differential voltage is lower than the first threshold voltage. A sensor control method is also provided.
摘要翻译：一种传感器控制装置，包括具有传感器单元和一对电极的空气/燃料比传感器，能够在电极之间提供预定电流的电流源，导通/截止电流源的电流控制部，电压检测检测在电流源被导通和截止的各个时刻在电极之间产生的电压的差分电压检测部分，其检测在电流源被导通和关断的各个时刻产生的电压之间的差分电压; 将差分电压与第一阈值电压进行比较的第一电压比较部，以及当所述差分电压低于所述第一阈值电压时，判定所述传感器单元已经达到半激活状态的半激活状态判定部。还提供了传感器控制方法。

92. 发明授权

US07779669B2 Diagnostic method and apparatus for gas sensor 有权
标题翻译：气体传感器的诊断方法和装置
公开(公告)号：US07779669B2
公开(公告)日：2010-08-24
申请号：US12033633
申请日：2008-02-19
申请人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Masaki Hirata , Takahiro Suzuki
发明人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Masaki Hirata , Takahiro Suzuki
IPC分类号： G01N33/22 , G01M15/10
CPC分类号： F02D41/1495 , F02D41/1456 , F02D41/1474 , F02D41/1494 , F02D2041/1432
摘要： A gas sensor diagnostic method includes the steps of counting the reversal number of times that a target air-fuel ratio for an air-fuel mixture to be supplied to an internal combustion engine reverses from a rich side to a lean side or from the lean side to the rich side through a specific air-fuel ratio defined as a boundary of the rich and lean sides; obtaining a detection signal of a gas sensor at constant time intervals during a diagnosis period between a timing when the count for the reversal number is started and a timing when the reversal number reaches a predetermined number; calculating a moderated signal by applying a moderation calculation using a predetermined moderation coefficient to the obtained detection signal; calculating a deviation between the obtained detection signal and the calculated moderated signal; and determining whether the gas sensor is in an abnormal state or not on the basis of the deviation.
摘要翻译：气体传感器诊断方法包括以下步骤：计算供给内燃机的空气燃料混合物的目标空燃比从富侧向稀侧反转的倾倒次数通过定义为富边和贫边的边界的特定空燃比向富地提供; 在开始反转次数的定时与反转次数达到预定次数的定时之间的诊断期间，以恒定的时间间隔获取气体传感器的检测信号; 通过对所获得的检测信号应用使用预定调节系数的调节计算来计算调节信号; 计算所获得的检测信号与计算的调节信号之间的偏差; 并且基于偏差确定气体传感器是否处于异常状态。

93. 发明授权

US07655121B2 Gas sensor interface device and gas sensor system 有权
标题翻译：气体传感器接口装置和气体传感器系统
公开(公告)号：US07655121B2
公开(公告)日：2010-02-02
申请号：US11798234
申请日：2007-05-11
申请人： Hiroshi Inagaki , Tomonori Uemura , Norikazu Ieda
发明人： Hiroshi Inagaki , Tomonori Uemura , Norikazu Ieda
IPC分类号： G01N27/41
CPC分类号： G01N27/419
摘要： An interface device for a gas sensor includes a detection resistor having first and second ends to generate voltages by a current output of the gas sensor, a differential amplifier having first and second input terminals to receive the voltages of the first and second resistor ends and an output terminal to output a voltage according to a difference between the voltages of the first and second resistor ends, a first switching element to transmit the voltage of the first resistor end to the first input terminal of the differential amplifier in a transmission state and interrupt transmission of the voltage of the first resistor end to the first input terminal of the differential amplifier in an interruption state and a second switching element turned on to establish continuity between the first and second input terminals of the differential amplifier when the first switching element is in the interruption state.
摘要翻译：一种用于气体传感器的接口装置，包括：具有第一和第二端的检测电阻器，用于通过气体传感器的电流输出产生电压;差分放大器，具有第一和第二输入端子，用于接收第一和第二电阻器端的电压; 输出端子，根据第一和第二电阻器端子的电压之间的差异输出电压;第一开关元件，用于将第一电阻器端子的电压传输到差分放大器的第一输入端子，并且中断发送在第一开关元件处于中断状态时，第一电阻器端的电压到差分放大器的第一输入端子处于中断状态，而第二开关元件导通，以建立差分放大器的第一和第二输入端子之间的导通性中断状态

94. 发明授权

US07636624B2 Diagnostic method and control apparatus for gas sensor 有权
标题翻译：气体传感器诊断方法及控制装置
公开(公告)号：US07636624B2
公开(公告)日：2009-12-22
申请号：US12033614
申请日：2008-02-19
申请人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Masaki Hirata , Takahiro Suzuki
发明人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Masaki Hirata , Takahiro Suzuki
IPC分类号： G06F19/00 , G01N27/404
CPC分类号： F02D41/1454 , F02D41/123 , F02D41/1495 , G01N27/4175
摘要： A gas sensor diagnostic method (or apparatus) is arranged to periodically obtain sensor output values of a gas sensor such as an oxygen sensor for an internal combustion engine, and to determine local extreme values from the sensor output values obtained during a period of interruption of fuel supply to the engine. Moreover, the local extreme values are compared with a first predetermined threshold level. When the number of the local extreme values reaches a predetermined first number, a diagnosis is performed to determine whether the gas sensor is in an improper condition or not, in accordance with results of the comparison of the local extreme values with the first threshold level.
摘要翻译：气体传感器诊断方法（或装置）被布置成周期性地获得诸如用于内燃机的氧传感器的气体传感器的传感器输出值，并且从在中断期间获得的传感器输出值确定局部极值向发动机供油。此外，将局部极值与第一预定阈值水平进行比较。当本地极值的数量达到预定的第一数量时，根据局部极值与第一阈值水平的比较结果，执行诊断以确定气体传感器是否处于不正确的状态。

95. 发明申请

US20080311019A1 Apparatus for pulling single crystal by CZ method 审中-公开
标题翻译：用CZ法拉单晶的装置
公开(公告)号：US20080311019A1
公开(公告)日：2008-12-18
申请号：US11981476
申请日：2007-10-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C01B33/02 , H01L21/322
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
摘要翻译：在配备有冷却器和隔热构件的Czochralski（CZ）单晶拉拔器中，它们将被放置在CZ炉中，使得能够顺利地再充电和额外的材料充电。此外，可以顺利地进行利用Dash的颈部方法消除硅晶种的位错。为此，提供了一种CZ单晶拉拔器，其中冷却器和绝热构件在再充电或附加充电材料期间或在通过使用硅晶粒消除硅晶种的位错期间立即向上移动离开熔融表面破折号的脖子法。

96. 发明授权

US07462266B2 Apparatus for detecting concentration of nitrogen oxide 有权
标题翻译：用于检测氮氧化物浓度的装置
公开(公告)号：US07462266B2
公开(公告)日：2008-12-09
申请号：US10329489
申请日：2002-12-27
申请人： Shigeru Miyata , Noriaki Kondo , Hiroshi Inagaki
发明人： Shigeru Miyata , Noriaki Kondo , Hiroshi Inagaki
IPC分类号： G01N27/407
CPC分类号： G01N27/417 , G01N27/4074 , G01N27/419
摘要： Apparatus for detecting the NOx concentration includes a first measurement chamber 20 communicating with the gas under measurement via a diffusion rate defining layer 4d and a second measurement chamber 26 communicating with the first measurement chamber 20 via diffusion limiting layers 6d, 22d. A first pump current IP1 is controlled so that an output of a Vs cell 6 will be equal to the reference voltage VCO for controlling the oxygen concentration in the first measurement chamber 20 to a pre-set low value. A constant voltage is applied across the second pump cell 8 for decomposing the NOx component in the second measurement chamber 26 for pumping out oxygen for detecting the NOx concentration from a second pump current IP2. The sensor temperature is detected from the internal resistance of the Vs cell for controlling the current supplied to the heaters 12, 14. If the temperature of the gas under measurement is changed rapidly, the sensor temperature is changed. The detected second pump current IP2 is corrected depending on an offset of the detected sensor temperature from the target temperature assuring detection of the NOx concentration to high accuracy.
摘要翻译：用于检测NOx浓度的装置包括通过扩散速率限定层4d与测量的气体连通的第一测量室20和经由扩散限制层6d，22d与第一测量室20连通的第二测量室26。控制第一泵电流IP1，使得Vs单元6的输出将等于用于将第一测量室20中的氧浓度控制为预定的低值的参考电压VCO。在第二泵电池8上施加恒定电压，以分解第二测量室26中的NOx组分，以从第二泵电流IP2泵出用于检测NOx浓度的氧气。从Vs单元的内部电阻检测传感器温度，用于控制供给到加热器12,14的电流。如果测量气体的温度快速变化，则传感器温度变化。检测到的第二泵电流IP2根据检测到的传感器温度与目标温度的偏移量进行校正，确保将NOx浓度检测到高精度。

97. 发明申请

US20070056860A1 Sensor control apparatus and method 有权
标题翻译：传感器控制装置及方法
公开(公告)号：US20070056860A1
公开(公告)日：2007-03-15
申请号：US11518945
申请日：2006-09-12
申请人： Hiroshi Inagaki , Yoshinori Inoue
发明人： Hiroshi Inagaki , Yoshinori Inoue
IPC分类号： G01N27/26 , G01F1/64
CPC分类号： G01N27/417
摘要： A sensor control apparatus comprising an air/fuel ratio sensor having a sensor cell with a pair of electrodes, a current source capable of supplying a predetermined current between the electrodes, a current control section that turns on/off the current source, a voltage detecting section that detects voltages generated between the electrodes at respective times when the current source is turned on and off, a differential voltage detecting section that detects a differential voltage between the voltages that are generated at the respective times when the current source is turned on and off, a first voltage comparing section that compares the differential voltage with a first threshold voltage, and a half-activated state determining section that determines that the sensor cell has reached a half-activated state when the differential voltage is lower than the first threshold voltage. A sensor control method is also provided.
摘要翻译：一种传感器控制装置，包括具有传感器单元和一对电极的空气/燃料比传感器，能够在电极之间提供预定电流的电流源，导通/截止电流源的电流控制部，电压检测检测在电流源被导通和截止的各个时刻在电极之间产生的电压的差分电压检测部分，其检测在电流源被导通和关断的各个时刻产生的电压之间的差分电压; 将差分电压与第一阈值电压进行比较的第一电压比较部，以及当所述差分电压低于所述第一阈值电压时，判定所述传感器单元已经达到半激活状态的半激活状态判定部。还提供了传感器控制方法。

98. 发明申请

US20060005762A1 Method for producing silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US20060005762A1
公开(公告)日：2006-01-12
申请号：US10533147
申请日：2003-10-31
申请人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
发明人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
IPC分类号： C30B15/00 , C30B21/06 , C30B23/00 , C30B30/04 , C30B27/02
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region α2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. Further, the present invention is to produce a silicon wafer wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region β1, and the heat treatment condition of the silicon crystal and the oxygen concentration in the silicon crystal are controlled so that no OSF nuclei grow to OSFs. Moreover, the present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that they fall in the vicinity of the lower limit line LN3 within the epitaxial defect-free region α1.
摘要翻译：本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制，使得硅晶体中的硼浓度不低于1×10 18原子/ cm 3，并且生长条件V / G落在外延无缺陷区域α2N中，其下限线LN1是表示生长速率V逐渐下降的线硼浓度增加。此外，本发明是为了制造硅晶片，其中硅晶体中的硼浓度和生长条件V / G被控制为至少包括外延缺陷区β1，并且控制硅晶体的热处理条件和硅晶体中的氧浓度，使得OSF核不生长到OSF。此外，本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制为使得它们落入外延缺陷区域内的下限线LN3附近， SUB> 1 。

99. 发明申请

US20050139149A1 Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor 有权
标题翻译：单晶半导体的制造方法及单晶半导体的制造装置
公开(公告)号：US20050139149A1
公开(公告)日：2005-06-30
申请号：US11005180
申请日：2004-12-06
申请人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
发明人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
IPC分类号： C30B15/00 , C30B15/20 , C30B15/22 , C30B15/36 , C30B29/06 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/20 , C30B15/22 , C30B15/36 , Y10S117/90 , Y10T117/1004
摘要： A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (ΔT) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (ΔT) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (ΔT) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined. Temperature control is conducted so that at the time the seed crystal (14) is immersed in the melt (5) the temperature difference between the seed crystal (14) and the melt (5) falls within the determined allowable temperature difference (ΔT).
摘要翻译：一种单晶半导体的制造方法及其装置。可以使用不具有任何显着变化的现有设备来提升大直径和大重量的单晶半导体，同时不影响单晶半导体的氧浓度和熔体的温度，同时不会过度地提高温度晶种。特别地，预设晶种（14）的允许温差（DeltaT）和直径（D）之间的关系（L 1，L 2，L 3），使得晶种（14）在籽晶（14）浸入熔体中的时间和熔体（5）落入未被引入到晶种（14）中的位错的允许温度差（DeltaT）之内。根据关系（L 1，L 2，L 3），确定与浸入熔体中的晶种（14）的直径（D）相对应的允许温度差（DeltaT）。进行温度控制，使晶种（14）浸入熔融物（5）中时晶种（14）和熔体（5）之间的温度差落在确定的允许温差（DeltaT）之内。

100. 发明授权

US06655334B2 Ignition apparatus for use in internal combustion engine 失效
公开(公告)号：US06655334B2
公开(公告)日：2003-12-02
申请号：US10132161
申请日：2002-04-26
申请人： Hiroshi Inagaki , Tomohiro Fuma , Takahiro Suzuki
发明人： Hiroshi Inagaki , Tomohiro Fuma , Takahiro Suzuki
IPC分类号： F02P1300
CPC分类号： H01T13/08 , F02B2275/18 , F02F1/242
摘要： A plug hole pipe 79 has thread grooves 81 formed on an outer circumferential surface thereof and causes a spark plug 11 to be pressed against a cylinder head 51 when the plug hole pipe is fixedly attached to the cylinder head 51 through screw engagement. The spark plug 11 is configured such that no thread grooves are formed on the outer circumferential surface of a front end portion 25 of a metallic shell 19, and can be vertically inserted into a plug disposition hole 51a formed in the cylinder head 51. By vertically inserting the spark plug 11 into the plug disposition hole 51a while the orientation of a ground electrode 21 is set beforehand in relation to the cylinder head 51, the ground electrode 21 can be oriented in a specific direction.

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