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91. 发明授权

US08846296B2 Photoresist compositions 有权
标题翻译：光刻胶组合物
公开(公告)号：US08846296B2
公开(公告)日：2014-09-30
申请号：US13461960
申请日：2012-05-02
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/028
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A composition is provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.
摘要翻译：提供了组合物。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。光敏基底产生剂可以包括安息香氨基甲酸酯，O-氨基甲酰羟基胺，O-氨基甲酰肟，芳族磺酰胺，α-内酯，N-（2-亚乙烯基）酰胺，叠氮化物，酰胺，肟，季铵盐或胺酰胺。

92. 发明授权

US08715907B2 Developable bottom antireflective coating compositions for negative resists 有权
标题翻译：用于负性抗蚀剂的可开发的底部抗反射涂料组合物
公开(公告)号：US08715907B2
公开(公告)日：2014-05-06
申请号：US13206796
申请日：2011-08-10
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Sen Liu
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Sen Liu
IPC分类号： G03F7/09 , G03F7/11 , G03F7/30
CPC分类号： G03F7/0382 , C09J133/14 , G03F7/091 , G03F7/094 , G03F7/095
摘要： A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist and the NDBARC layer become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.
摘要翻译：负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。在NDBARC材料中，羧酸提供了显影剂的溶解度，而单独的醇，单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC的抗蚀涂层期间，NDBARC和抗蚀剂之间不会发生混合。在曝光和烘烤之后，由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联，负光致抗蚀剂和NDBARC层的光刻曝光部分变得不溶于显影剂。

93. 发明申请

US20140004712A1 DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND PATTERN FORMING METHOD USING THEREOF 有权
标题翻译：可开发的底部抗反射涂料组合物及其使用的图案形成方法
公开(公告)号：US20140004712A1
公开(公告)日：2014-01-02
申请号：US13537177
申请日：2012-06-29
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ranee Kwong , Sen Liu
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ranee Kwong , Sen Liu
IPC分类号： G03F7/20 , H01L21/265 , C09K3/00
CPC分类号： G03F7/11 , C08F220/26 , C08L33/066 , C08L33/16 , C08L2312/00 , C09D133/066 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0397 , G03F7/091 , G03F7/30 , G03F7/322 , G03F7/40 , H01L21/0274 , H01L21/0276 , H01L21/265 , C08L2205/025
摘要： The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.
摘要翻译：本发明涉及一种可显影底部抗反射涂层（BARC）组合物和使用该BARC组合物的图案形成方法。 BARC组合物包括具有第一羧酸部分，含羟基脂环族部分和第一发色团部分的第一聚合物; 具有第二羧酸部分的第二聚合物，含羟基的无环部分和第二发色团部分; 交联剂; 和辐射敏感酸发生器。第一和第二发色团部分各自吸收波长从100nm到400nm的光。在图案形成方法中，在BARC组合物的BARC层上形成光致抗蚀剂层。曝光后，通过显影剂选择性地除去光致抗蚀剂层和BARC层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 BARC组合物和图案形成方法对于植入水平特别有用。

94. 发明授权

US08568960B2 Multiple exposure photolithography methods 有权
标题翻译：多曝光光刻法
公开(公告)号：US08568960B2
公开(公告)日：2013-10-29
申请号：US13418421
申请日：2012-03-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/26 , G03F7/40
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译：一种在衬底上形成光致抗蚀剂组合物的膜并将膜的第一和第二区分别暴露于具有第一和第二图像图案的第一和第二掩模的辐射的方法。光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。第二量的酸超过第一量的酸。第二剂辐射超过第一剂量的辐射。光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。碱的第一量超过第一量的酸。第二量的酸超过第二量的碱。

95. 发明授权

US08546069B2 Method for enhancing lithographic imaging of isolated and semi-isolated features 失效
标题翻译：用于增强隔离和半隔离特征的光刻成像的方法
公开(公告)号：US08546069B2
公开(公告)日：2013-10-01
申请号：US12354247
申请日：2009-01-15
申请人： Wu-Song Huang , Gregory R. McIntyre
发明人： Wu-Song Huang , Gregory R. McIntyre
IPC分类号： G03F7/40
CPC分类号： G03F7/2022 , G03F7/095 , G03F7/26
摘要： The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention.
摘要翻译：本发明涉及用于增强孤立和半隔离特征的光刻成像的光刻方法。在衬底上形成第一光致抗蚀剂的第一层。在第一层上形成第二光致抗蚀剂层。第二光致抗蚀剂包括含有吸收部分的聚合物。第二层通过第一图案化掩模曝光并显影以形成第一浮雕图像。第一浮雕图像和第一层通过第二图案掩模曝光。第一和第二图案化掩模中的一个包括密集图案，而另一个包括隔离或半隔离图案。去除第一层的第一浮雕图像和底部可溶区域以形成具有隔离或半隔离图案的第二浮雕图像。第二层也可以在本发明中曝光和烘烤时可漂白。

96. 发明授权

US08394573B2 Photoresist compositions and methods for shrinking a photoresist critical dimension 失效
标题翻译：用于收缩光刻胶临界尺寸的光刻胶组合物和方法
公开(公告)号：US08394573B2
公开(公告)日：2013-03-12
申请号：US12883442
申请日：2010-09-16
申请人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
发明人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0397 , G03F7/405
摘要： A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.
摘要翻译：一种降低光致抗蚀剂临界尺寸的方法，所述方法包括在基底上沉积光致抗蚀剂膜，其中光致抗蚀剂膜包括热碱发生器; 图案化光致抗蚀剂膜以形成具有第一临界尺寸的第一图案化膜; 在第一图案化膜上沉积可交联膜; 在沉积可交联膜之前或之后热激活第一图案化膜，以释放第一图案化膜中的碱，并引起与第一图案化膜接触的可交联膜的交联; 并且显影所述可交联膜以除去其中的非交联的可溶部分以形成与第一临界尺寸相比具有降低的临界尺寸的第二图案化膜。

97. 发明申请

US20130001484A1 Near-Infrared Absorbing Film Compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US20130001484A1
公开(公告)日：2013-01-03
申请号：US13608409
申请日：2012-09-10
申请人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
发明人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
IPC分类号： G02B5/24
CPC分类号： G03F7/091 , G03F9/7026
摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

98. 发明申请

US20120070782A1 SELF-FORMING TOP ANTI-REFLECTIVE COATING COMPOSITIONS AND, PHOTORESIST MIXTURES AND METHOD OF IMAGING USING SAME 有权
标题翻译：自形成顶部防反射涂料组合物和光刻胶混合物及其成像方法
公开(公告)号：US20120070782A1
公开(公告)日：2012-03-22
申请号：US13301841
申请日：2011-11-22
申请人： Wu-Song Huang , Irene Popova , Pushkara Rao Varanasi , Libor Vyklicky
发明人： Wu-Song Huang , Irene Popova , Pushkara Rao Varanasi , Libor Vyklicky
IPC分类号： G03F7/004 , C08L27/12
CPC分类号： C08F212/34 , C08F212/32 , C08F220/22 , C08F220/26 , C08F220/28 , G03F7/0046 , G03F7/0392 , G03F7/091
摘要： A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third monomer having a fluoroalkyl moiety. Also a photoresist formulation including the composition of matter and a method of imaging using the photoresist formulation including the composition of matter.
摘要翻译：物质的组成。物质的组成包括具有乙烯主链并包含具有芳族部分的第一单体，具有碱可溶部分的第二单体或酸不稳定保护基可溶部分的第一单体和具有氟代烷基部分的第三单体的聚合物。还包括包含物质组合物的光致抗蚀剂制剂和使用包含物质组成的光致抗蚀剂制剂的成像方法。

99. 发明授权

US08053172B2 Photoresists and methods for optical proximity correction 有权
标题翻译：用于光学邻近校正的光致抗蚀剂和方法
公开(公告)号：US08053172B2
公开(公告)日：2011-11-08
申请号：US12035009
申请日：2008-02-21
申请人： Scott David Halle , Wu-Song Huang , Ranee Wai-Ling Kwong , Pushkara R. Varanasi
发明人： Scott David Halle , Wu-Song Huang , Ranee Wai-Ling Kwong , Pushkara R. Varanasi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/22 , G03F7/30 , G03F7/38
CPC分类号： G03F7/095 , G03F7/039 , G03F7/0397 , G03F7/091 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.
摘要翻译：光刻组合物和方法。在基板上形成第一光致抗蚀剂的第一层。第二层第二光致抗蚀剂直接形成在第一层上。第二光致抗蚀剂的第二聚合物包括吸收部分。第二层是图案成像和显影，导致去除碱溶性区域。仍然存在来自第二层的浮雕图案。浮雕图案和第一层暴露于第二剂量的辐射。浮雕图案中的聚合物吸收第二剂量的一部分。第二剂量的一部分通过浮雕图案的至少一个区域并暴露第一层的至少一个区域。去除第一层的浮雕图案和碱溶性区域。仍然存在第一层的浮雕图案。还包括第二光刻方法和光致抗蚀剂组合物。

100. 发明申请

US20110262862A1 NEAR-INFRARED ABSORPTIVE LAYER-FORMING COMPOSITION AND MULTILAYER FILM 有权
标题翻译：近红外吸收层形成组合物和多层膜
公开(公告)号：US20110262862A1
公开(公告)日：2011-10-27
申请号：US13091287
申请日：2011-04-21
申请人： Masaki OHASHI , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Masaki OHASHI , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
IPC分类号： G03F7/004 , G02B5/22
CPC分类号： G03F7/0045 , G02B5/208 , G02B5/22 , G03F7/091 , G03F7/11
摘要： A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R1 and R2 are a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R′)(R″), R′ and R″ are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and X− is an anion.
摘要翻译：包含（A）式（1）的近红外吸收染料，（B）聚合物和（C）溶剂的组合物用于形成近红外吸收层。式（1）中，R 1和R 2是可以含有杂原子的一价烃基，k为0〜5，m为0或1，n为1或2，Z为氧，硫或C（R'）（ R“），R'和R”是氢或可以含有杂原子的一价烃基，X-是阴离子。

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