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91. 发明授权

US06704101B1 Scatterometry based measurements of a moving substrate 失效
标题翻译：移动基板的基于散射法的测量
公开(公告)号：US06704101B1
公开(公告)日：2004-03-09
申请号：US10050423
申请日：2002-01-16
申请人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton
发明人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton
IPC分类号： G01N2100
CPC分类号： G01N21/47 , G01N21/4788 , G01N21/55 , G01N21/9501 , G01N2201/10
摘要： A system and method are disclosed for monitoring characteristics of a substrate. A substrate is supported for movement within a processing environment and an incident light beam is emitted onto a surface of the substrate. The incident beam is provided to a moveable reflector that directs the beam to the substrate. A control system controls movement of the reflector so as to selectively interrogates the substrate with the beam.
摘要翻译：公开了用于监测基板的特性的系统和方法。支撑衬底在处理环境中移动，并且将入射光束发射到衬底的表面上。入射光束被提供到将光束引导到衬底的可移动反射器。控制系统控制反射器的运动，以便选择性地用光束询问衬底。

92. 发明授权

US06650422B2 Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith 有权
标题翻译：散射技术来确定特征的不对称轮廓，并产生与之相关联的反馈或前馈过程控制数据
公开(公告)号：US06650422B2
公开(公告)日：2003-11-18
申请号：US09817820
申请日：2001-03-26
申请人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01B1100
CPC分类号： G01B11/30 , G01B11/24 , G01B11/26 , G01N21/211 , G01N21/4738 , G01N21/9501
摘要： The present invention is directed to a method and a system for non-destructively, efficiently and accurately detecting asymmetry in the profile of a feature formed on a wafer during the process of semiconductor fabrication. The method encompasses directing a beam of light or radiation at a feature and detecting a reflected beam associated therewith. Data associated with the reflected beam is correlated with data associated with known feature profiles to ascertain profile characteristics associated with the feature of interest. Using the profile characteristics, an asymmetry of the feature is determined which is then used to generate feedback or feedforward process control data to compensate for or correct such asymmetry in subsequent processing.
摘要翻译：本发明涉及一种用于在半导体制造过程中非破坏性地，有效地和准确地检测在晶片上形成的特征的轮廓的不对称性的方法和系统。该方法包括在特征处引导光束或辐射，并且检测与其相关联的反射光束。与反射光束相关联的数据与与已知特征轮廓相关联的数据相关联，以确定与感兴趣特征相关联的轮廓特征。使用简档特征，确定特征的不对称性，然后将其用于产生反馈或前馈过程控制数据，以补偿或纠正随后处理中的这种不对称性。

93. 发明授权

US06645702B1 Treat resist surface to prevent pattern collapse 失效
标题翻译：处理抗蚀剂表面以防止图案塌陷
公开(公告)号：US06645702B1
公开(公告)日：2003-11-11
申请号：US10050438
申请日：2002-01-16
申请人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
发明人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
IPC分类号： G03F700
CPC分类号： G03F7/265 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： The present invention relates to systems and methods for increasing the hydrophobicity of patterned resists. In one embodiment, the present invention relates to a method of processing an ultra-thin resist, involving depositing the ultra-thin photoresist over a semiconductor substrate; irradiating the ultra-thin resist with electromagnetic radiation; developing the ultra-thin resist with a developer to form a patterned resist, the patterned resist having a surface with a first hydrophobicity; contacting the patterned resist with a transition solvent to provide the surface of the patterned resist with a second hydrophobicity, wherein the second hydrophobicity is greater than the first hydrophobicity and contact of the patterned resist with the transition is conducted between developing the ultra-thin resist and rinsing patterned resist; and rinsing the patterned resist having the second hydrophobicity with an aqueous solution.
摘要翻译：本发明涉及增加图案化抗蚀剂疏水性的系统和方法。在一个实施例中，本发明涉及一种处理超薄抗蚀剂的方法，包括在半导体衬底上沉积超薄光致抗蚀剂; 用电磁辐射照射超薄抗蚀剂; 用显影剂显影超薄抗蚀剂以形成图案化抗蚀剂，图案化抗蚀剂具有第一疏水性表面; 使图案化的抗蚀剂与过渡溶剂接触以提供具有第二疏水性的图案化抗蚀剂的表面，其中第二疏水性大于第一疏水性，并且图案化的抗蚀剂与转变的接触在显影超薄抗蚀剂和冲洗图案抗蚀剂; 并用水溶液冲洗具有第二疏水性的图案化抗蚀剂。

94. 发明授权

US06593210B1 Self-aligned/maskless reverse etch process using an inorganic film 有权
标题翻译：使用无机膜的自对准/无掩模反向蚀刻工艺
公开(公告)号：US06593210B1
公开(公告)日：2003-07-15
申请号：US09707214
申请日：2000-11-06
申请人： Bharath Rangarajan , Bhanwar Singh , Ursula Q. Quinto
发明人： Bharath Rangarajan , Bhanwar Singh , Ursula Q. Quinto
IPC分类号： H01L2176
CPC分类号： H01L21/76229 , H01L21/31053 , H01L21/31055 , H01L21/31058
摘要： One aspect of the present invention relates to a method of forming trench isolation regions within a semiconductor substrate, involving the steps of forming trenches in the semiconductor substrate; depositing a semi-conformal dielectric material over the substrate, wherein the semi-conformal dielectric material has valleys positioned over the trenches; forming an inorganic conformal film over the semi-conformal dielectric material; polishing the semiconductor substrate whereby a first portion of the inorganic conformal film is removed thereby exposing a portion of the semi-conformal dielectric material, and a second portion remains over the valleys of the semi-conformal dielectric material; removing the exposed portions of the semi-conformal dielectric material; and planarizing the substrate to provide the semiconductor substrate having trenches with a dielectric material therein.
摘要翻译：本发明的一个方面涉及一种在半导体衬底内形成沟槽隔离区域的方法，包括在半导体衬底中形成沟槽的步骤; 在所述衬底上沉积半保形介电材料，其中所述半保形介电材料具有位于所述沟槽上方的谷; 在半保形介电材料上形成无机保形膜; 抛光所述半导体衬底，由此去除所述无机保形膜的第一部分，从而暴露所述半共形绝缘材料的一部分，并且第二部分保留在所述半共形绝缘材料的所述谷的上方; 去除所述半共形介电材料的暴露部分; 并且平坦化衬底以提供其中具有介电材料的沟槽的半导体衬底。

95. 发明授权

US06579733B1 Using scatterometry to measure resist thickness and control implant 有权
公开(公告)号：US06579733B1
公开(公告)日：2003-06-17
申请号：US10196407
申请日：2002-07-16
申请人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： H01L2166
CPC分类号： H01L22/12
摘要： The present invention provides systems and methods wherein scatterometry is used to control an implant processes, such as an angled implant process. According to the invention, data relating to resist dimensions is obtained by scatterometry prior to an the implant process. The data is used to determine whether a resist is suitable for an implant process and/or determine an appropriate condition, such as an angle of implant or implantation dose, for an implant process.

96. 发明授权

US06570157B1 Multi-pitch and line calibration for mask and wafer CD-SEM system 失效
标题翻译：掩模和晶圆CD-SEM系统的多间距和线校准
公开(公告)号：US06570157B1
公开(公告)日：2003-05-27
申请号：US09591012
申请日：2000-06-09
申请人： Bhanwar Singh , Khoi Phan , Bharath Rangarajan
发明人： Bhanwar Singh , Khoi Phan , Bharath Rangarajan
IPC分类号： G01D1800
CPC分类号： G03F7/70516 , G03F7/70625 , H01J37/28 , H01J2237/2826 , H01L21/682
摘要： The present invention relates to a system and method for calibrating a scanning electron microscope (SEM). The method comprises using a reference having multiple features of different dimensions and spatial interrelationships, wherein more than one feature dimension or spacing is measured using the SEM prior to measuring a workpiece. The dimensional and/or spatial measurements from the reference sample are correlated to obtain one or more calibration factors for the SEM. The calibration factor or factors may then be correlated with a workpiece SEM measurement to obtain a workpiece critical dimension (CD). A system is provided for calibrating a SEM including a reference with various measurable features of different dimensions and/or spacing. The system comprises an SEM to measure one or more reference sample feature dimensions and/or spacings and a processor or other device to correlate the measurement data to obtain one or more calibration factors.
摘要翻译：本发明涉及一种用于校准扫描电子显微镜（SEM）的系统和方法。该方法包括使用具有不同尺寸和空间相互关系的多个特征的参考，其中在测量工件之前使用SEM测量多于一个特征尺寸或间距。来自参考样品的尺寸和/或空间测量值相关，以获得SEM的一个或多个校准因子。然后可以将校准因子或因子与工件SEM测量值相关联，以获得工件临界尺寸（CD）。提供了一种用于校准包括具有不同尺寸和/或间隔的各种可测量特征的参考的SEM的系统。该系统包括用于测量一个或多个参考样本特征尺寸和/或间隔的SEM和用于使测量数据相关联以获得一个或多个校准因子的处理器或其它装置的SEM。

97. 发明授权

US06561706B2 Critical dimension monitoring from latent image 有权
公开(公告)号：US06561706B2
公开(公告)日：2003-05-13
申请号：US09893807
申请日：2001-06-28
申请人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G03D500
CPC分类号： G03F7/70633 , G03F7/70675
摘要： A system for monitoring a latent image exposed in a photo resist during semiconductor manufacture is provided. The system includes one or more light sources, each light source directing light to the latent image and/or one or more gratings exposed on one or more portions of a wafer. Light reflected from the latent image and/or the gratings is collected by a signature system, which processes the collected light. Light passing through the latent image and/or gratings may similarly be collected by the signature system, which processes the collected light. The collected light is analyzed and can be employed to generate feedback information to control the exposure. The collect light is further analyzed and can be employed to generate feed forward information that can be employed to control post exposure processes including development and baking processes.

98. 发明授权

US06501534B1 Automated periodic focus and exposure calibration of a lithography stepper 失效
标题翻译：光刻步进机的自动周期聚焦和曝光校准
公开(公告)号：US06501534B1
公开(公告)日：2002-12-31
申请号：US09845375
申请日：2001-04-30
申请人： Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Carmen Lapid Morales
发明人： Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Carmen Lapid Morales
IPC分类号： G03B2752
CPC分类号： G03F7/70516 , G03F7/70558 , G03F7/70625 , G03F7/70641
摘要： The present invention is directed to a system and a method for calibrating a lithography stepper system. The system includes a lithography stepper system, measurement system such as a scatterometry system, and a processor for correlating an ideal “golden standard” characterization signature to a test structure characterization data set, based on a plurality of focus and exposure conditions.
摘要翻译：本发明涉及用于校准光刻步进系统的系统和方法。该系统包括光刻步进系统，诸如散射测量系统的测量系统和用于基于多个焦点和曝光条件将理想“黄金标准”表征特征与测试结构表征数据集相关联的处理器。

99. 发明授权

US06465156B1 Method for mitigating formation of silicon grass 失效
标题翻译：降低硅草形成的方法
公开(公告)号：US06465156B1
公开(公告)日：2002-10-15
申请号：US09422390
申请日：1999-10-21
申请人： Bhanwar Singh , Bharath Rangarajan , Steven Avanzino
发明人： Bhanwar Singh , Bharath Rangarajan , Steven Avanzino
IPC分类号： G03F738
CPC分类号： G03F7/38 , G03F7/265
摘要： The present invention relates to a method for mitigating formation of silicon grass. A silylation process is performed on a semiconductor structure, the structure including a photoresist layer, an underlayer under the photoresist layer, and a substrate under the underlayer. A chemical mechanical polishing process is employed to remove a portion of the photoresist layer.
摘要翻译：本发明涉及减轻硅草的形成的方法。在半导体结构上进行甲硅烷化处理，该结构包括光致抗蚀剂层，光致抗蚀剂层下的底层和底层下的基底。采用化学机械抛光工艺去除一部分光致抗蚀剂层。

100. 发明授权

US06459945B1 System and method for facilitating determining suitable material layer thickness in a semiconductor device fabrication process 失效
标题翻译：用于在半导体器件制造工艺中有助于确定合适的材料层厚度的系统和方法
公开(公告)号：US06459945B1
公开(公告)日：2002-10-01
申请号：US09311223
申请日：1999-05-13
申请人： Bhanwar Singh , Carmen Morales , Bharath Rangarajan
发明人： Bhanwar Singh , Carmen Morales , Bharath Rangarajan
IPC分类号： G06F1900
CPC分类号： B24B37/013 , B24B49/04 , H01L21/67253 , H01L22/34
摘要： The present invention relates to a test wafer for use in optimizing a process. The test wafer includes a substrate and a material layer formed over the substrate, wherein the material layer includes N number of test regions (N being an integer greater than one). At least one of the test regions has a material layer thickness different from another of the test regions. A spindle drive system is also provided for driving at least one spindle. One end of the at least one spindle is coupled to a polishing pad, which is employed in forming the test regions.
摘要翻译：本发明涉及用于优化工艺的测试晶片。测试晶片包括衬底和形成在衬底上的材料层，其中材料层包括N个测试区域（N是大于1的整数）。测试区域中的至少一个具有与另一个测试区域不同的材料层厚度。还提供用于驱动至少一个主轴的主轴驱动系统。所述至少一个心轴的一端连接到用于形成所述测试区域的抛光垫。

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