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91. 发明授权

US08649408B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08649408B2
公开(公告)日：2014-02-11
申请号：US12874440
申请日：2010-09-02
申请人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/02461
摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
摘要翻译：根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及一对由绝缘体制成的掩埋层，以埋置凹槽。沟槽的底面随着条纹的距离增加而变浅。

92. 发明授权

US08597835B2 Positive-electrode material for a lithium ion secondary battery and manufacturing method of the same 有权
标题翻译：锂离子二次电池用正极材料及其制造方法
公开(公告)号：US08597835B2
公开(公告)日：2013-12-03
申请号：US13473071
申请日：2012-05-16
申请人： Takashi Kawasaki , Hiroshi Sakashita , Takehiko Sawai , Shinji Saito
发明人： Takashi Kawasaki , Hiroshi Sakashita , Takehiko Sawai , Shinji Saito
IPC分类号： H01M4/58 , H01B1/04
CPC分类号： H01M4/5825 , H01M4/136 , H01M4/1397 , H01M4/364 , H01M4/60 , H01M4/625 , H01M10/0525 , Y02T10/7011
摘要： Provided is a positive electrode material for a safe, high capacity, long lifetime lithium ion secondary battery capable of large current charging and discharging. The positive electrode material contains between 5% by mass or more and 30% by mass or less of a carbon black composite formed by joining together fibrous carbon and carbon black wherein ash is 1.0% or less by mass in accordance with JIS K 1469 and the remainder includes olivine-type lithium iron phosphate, and volatile oxygen-containing functional groups which constitutes 1.0% or less by mass of the positive electrode material. The fibrous carbon is preferably a nanotube having a fiber diameter of 5 nm or more and 50 nm or less and a specific surface area between 50 m2/g or more and 400 m2/g or less.
摘要翻译：提供一种能够进行大电流充放电的安全，高容量，长寿命的锂离子二次电池用正极材料。正极材料含有5质量％以上且30质量％以下的通过将纤维状碳和炭黑接合而形成的炭黑复合体，其中灰分按照JIS K1469 1.0质量％以下，余量包括橄榄石型磷酸铁锂和构成正极材料质量的1.0％以下的挥发性含氧官能团。纤维状碳优选为纤维直径为5nm以上且50nm以下，比表面积为50m 2 / g以上且400m 2 / g以下的纳米管。

93. 发明申请

US20130236738A1 LAMINATE AND METHOD FOR PRODUCING LAMINATE 审中-公开
标题翻译：层压板和生产层压板的方法
公开(公告)号：US20130236738A1
公开(公告)日：2013-09-12
申请号：US13885862
申请日：2011-11-17
申请人： Yuichiro Yamauchi , Shinji Saito , Masaru Akabayashi , Satoshi Hirano
发明人： Yuichiro Yamauchi , Shinji Saito , Masaru Akabayashi , Satoshi Hirano
IPC分类号： H05K1/11
CPC分类号： H05K1/11 , B23K35/001 , C04B41/009 , C04B41/52 , C04B41/90 , C04B2111/00844 , C23C24/04 , C23C28/322 , C23C28/34 , H01L23/15 , H01L23/3735 , H01L2924/0002 , H05K1/0306 , H05K3/0061 , H05K3/388 , Y10T428/12611 , C04B35/00 , C04B35/10 , C04B41/4545 , C04B41/50 , C04B41/5116 , C04B41/5127 , C04B41/5094 , C04B41/515 , C04B41/522 , C04B41/5155 , H01L2924/00
摘要： It is possible to obtain a laminate having high adhesion strength between ceramic and a metal coating by providing the following: an insulating ceramic substrate; an intermediate layer formed on the surface of the ceramic substrate and having a metal-containing principal component metal layer and an active ingredient layer including metal, a metal oxide, or a metal hydride; and a metal coating formed on the surface of the intermediate layer by accelerating a metal-containing powder with gas, and depositing the same on the surface thereof by spraying while in a solid state.
摘要翻译：可以通过提供以下方式获得陶瓷和金属涂层之间具有高粘合强度的层压体：绝缘陶瓷基板; 形成在陶瓷基板的表面上并具有含金属的主要成分金属层的中间层和包含金属，金属氧化物或金属氢化物的活性成分层; 以及通过用气体加速含金属的粉末而在中间层的表面上形成的金属涂层，并且在固态下通过喷涂将其沉积在其表面上。

94. 发明授权

US08457167B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US08457167B2
公开(公告)日：2013-06-04
申请号：US12873821
申请日：2010-09-01
申请人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Jongil Hwang , Masaki Tohyama , Shinya Nunoue
发明人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Jongil Hwang , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01L33/30 , H01S5/22 , H01S5/323
摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.
摘要翻译：实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。凹槽的深度小于GaN衬底的厚度。该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。在半导体激光器件中，GaN衬底和半导体层的总厚度为100μm以上，并且，突起的顶面与凹部的底面之间的距离为5μm以上且50μm以下。。

95. 再颁专利

USRE44215E1 Semiconductor optoelectric device and method of manufacturing the same 有权
公开(公告)号：USRE44215E1
公开(公告)日：2013-05-14
申请号：US13270287
申请日：2011-10-11
申请人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
发明人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
IPC分类号： H01L33/00 , H01S5/20
CPC分类号： H01L33/20 , H01L33/16 , H01S5/0202 , H01S5/0213 , H01S5/3202 , H01S5/3226 , H01S5/32341 , Y10S438/973 , Y10S438/975
摘要： The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

96. 发明申请

US20130115416A1 CERAMIC MEMBER, PROBE HOLDER, AND MANUFACTURING METHOD OF CERAMIC MEMBER 有权
标题翻译：陶瓷会员，探头架，以及陶瓷会员的制造方法
公开(公告)号：US20130115416A1
公开(公告)日：2013-05-09
申请号：US13809290
申请日：2011-07-13
申请人： Akira Nakamura , Kohei Suzuki , Shinya Miyaji , Shinji Saito
发明人： Akira Nakamura , Kohei Suzuki , Shinya Miyaji , Shinji Saito
IPC分类号： C04B35/583 , C04B35/645
CPC分类号： C04B35/583 , C04B35/20 , C04B35/645 , C04B35/6455 , C04B2235/3206 , C04B2235/3217 , C04B2235/3225 , C04B2235/3418 , C04B2235/3445 , C04B2235/386 , C04B2235/5292 , C04B2235/656 , C04B2235/767 , C04B2235/77 , C04B2235/787 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , G01R1/06722 , G01R3/00 , Y10T428/24273
摘要： There is provided a ceramic member which is a sintered body containing enstatite and boron nitride as constituents, in which boron nitride is oriented in a single direction, a probe holder formed using the ceramic member, and a manufacturing method of the ceramic member. In the ceramic member, an index of orientation degree is not less than 0.8. In so doing, it is possible to provide a ceramic member which has a free machining property, a coefficient of thermal expansion which is close to that of silicon, and high strength, and a probe holder which is formed using the ceramic member, and a manufacturing method of the ceramic member.
摘要翻译：提供了一种陶瓷构件，该陶瓷构件是含有顽火和氮化硼作为组成的烧结体，其中氮化硼沿单一方向取向，使用该陶瓷构件形成的探针夹持器和陶瓷构件的制造方法。在陶瓷构件中，取向度的指标不小于0.8。在这样做时，可以提供一种具有自由加工性能，热膨胀系数接近于硅的陶瓷构件和高强度的陶瓷构件，以及使用该陶瓷构件形成的探针保持器，陶瓷构件的制造方法。

97. 发明申请

US20120228581A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120228581A1
公开(公告)日：2012-09-13
申请号：US13215628
申请日：2011-08-23
申请人： Jongil HWANG , Hung Hung , Yasushi Hattori , Rei Hashimoto , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Jongil HWANG , Hung Hung , Yasushi Hattori , Rei Hashimoto , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/3063 , H01S2304/04
摘要： The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds.
摘要翻译：根据实施例的半导体发光器件包括N型氮化物半导体层，设置在N型氮化物半导体层上的氮化物半导体有源层和设置在有源层上的P型氮化物半导体层。 P型氮化物半导体层包括氮化镓铝层。氮化镓铝层中的铟浓度在1E18原子/ cm3至1E20原子/ cm3之间。碳浓度等于或小于6E17原子/ cm3。当镁浓度用X表示，受主浓度用Y表示时，Y> {（ - 5.35e19）2-（X-2.70e19）2} 1 / 2-4.63e19成立。

98. 发明授权

US08130803B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08130803B2
公开(公告)日：2012-03-06
申请号：US12299186
申请日：2008-09-04
申请人： Jongil Hwang , Shinji Saito , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Shinya Nunoue
IPC分类号： H01S3/04 , G02B6/00 , H01L33/00
CPC分类号： H01S5/0228 , F21K9/61 , F21Y2115/10 , H01S5/005 , H01S5/22 , H01S5/4056
摘要： A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser light enters, and a second emission face from which the laser light traveling through the light guiding body is emitted, the incident face of the light guiding body being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance scattered in the light guiding body, absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light.
摘要翻译：一种发光器件包括：具有用于发射激光的第一发射面的半导体激光元件; 导光体，其被埋置在所述支撑基部的凹部中，引导从所述半导体激光元件发射的激光，并且具有入射面入射到所述入射面;以及第二射出面，导光体发射，导光体的入射面为激光的入射角在由激光的行进方向形成的平面内的布鲁斯特角度的预定范围内的曲面，激光发光点的短轴; 以及散射在导光体中的荧光体，吸收激光，并且发射具有与激光波长不同的波长的光。

99. 发明申请

US20110216799A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20110216799A1
公开(公告)日：2011-09-08
申请号：US12874440
申请日：2010-09-02
申请人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/02461
摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
摘要翻译：根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及一对由绝缘体制成的掩埋层，以埋置凹槽。沟槽的底面随着条纹的距离增加而变浅。

100. 发明申请

US20110216554A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110216554A1
公开(公告)日：2011-09-08
申请号：US12876675
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
IPC分类号： F21V7/22
CPC分类号： F21V7/22
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。发光器件具有发射激光束的半导体激光二极管。该装置具有导光部件，该导光部件包括上表面，下表面，彼此相对的两个侧面以及彼此相对的两个端面，激光束从光导部件的第一端面入射，导光部件在下表面具有凹陷，激光束被下表面反射并在上表面方向上发射。发光装置还具有设置在导光部件的上表面侧的发光部件，并且吸收从导光部件发射的激光束并发出可见光。并且该装置具有与导光部件的下表面和两个侧面接触的物质，该物质的折射率低于导光部件的折射率。

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