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91. 发明专利

JPS61273861A DRY BATTERY 失效
公开(公告)号：JPS61273861A
公开(公告)日：1986-12-04
申请号：JP11416885
申请日：1985-05-29
申请人： HITACHI LTD
发明人： ONUKI HITOSHI , KOIZUMI MASAHIRO , KAWABUCHI YASUSHI , ASAI OSAMU
IPC分类号： H01M4/06 , H01M4/12 , H01M4/38
摘要： PURPOSE:To heighten the hydrogen overvoltage of a dry battery without using mercury, by making a negative electrode of an intermetallic compound consisting of two or more kinds of elements whose hydrogen over-voltages are higher than that of nickel. CONSTITUTION:A negative electrode is made of an intermetallic compound consisting of two or more kinds of elements such as aluminum, zinc, tantalum,m indium, bismuth, antiomony, lead, magnesium, manganese, tin, cadmium and gallium, whose hydrogen overvoltages are higher than that of nickel. As a result, the higher hydrogen overvoltages are obtained without using mercury of high poisonousness, and the generation of gas is suppressed. For that reason, the corrosion resistance of the negative electrode is high.

92. 发明专利

JPS5928553A Corrosion resistant aluminum electronic material 失效
标题翻译：耐腐蚀铝电子材料
公开(公告)号：JPS5928553A
公开(公告)日：1984-02-15
申请号：JP13860882
申请日：1982-08-11
申请人： Hitachi Ltd
发明人： OONUKI HITOSHI , SUWA MASATERU , KOIZUMI MASAHIRO , ASAI OSAMU , SUZUKI KATSUMI , HIRAGA MAKOTO
IPC分类号： H01L23/52 , C22C21/00 , H01L21/3205 , H01L21/60 , H01L23/31 , H01L23/49
CPC分类号： C22C21/00 , H01L23/3107 , H01L23/3135 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/05624 , H01L2224/32225 , H01L2224/32245 , H01L2224/43 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48465 , H01L2224/48599 , H01L2224/48624 , H01L2224/48639 , H01L2224/48724 , H01L2224/48739 , H01L2224/73265 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85201 , H01L2224/85205 , H01L2224/85439 , H01L2224/92247 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01057 , H01L2924/01061 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/12033 , H01L2924/12042 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/01046 , H01L2924/01001 , H01L2924/01002 , H01L2924/00014 , H01L2924/01025 , H01L2924/00012 , H01L2924/00 , H01L2924/013 , H01L2924/00015 , H01L2924/2075 , H01L2924/00013 , H01L2924/01006
摘要： PURPOSE: To obtain an Al electronic material more excellent in corrosion resistance without lowering bondability, by containing a noble metal to Al as a main component in an amount corresponding to eutectic compsn. or less containing a primary crystal Al.
CONSTITUTION: This electronic material is based on Al and comprises an alloy containing a noble metal added to Al and is a material wherein the content of the noble metal corresponds to a eutetic compsn. having a primary crystal Al or less. When this material is used in a fine wire for connecting a wiring film comprising an Al vapor deposition film formed on a semiconductor element and an external lead wire, the bondability thereof is the same degree as Al. In addition, it can prevent the corrosion of the fine wire or the Al vapor deposition film in a semiconductor apparatus sealed by synthetic resin. In this case, when the content of the noble metal is used in an amount as mentioned above, it is finely crystallized as an eutectic crystal and a product having high plastic processability is obtained and high bondability in solid phase connection is further obtained.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：通过以与共晶组成物相当的量含有以Al为主成分的贵金属，可以获得耐腐蚀性更优异而不降低结合性的Al电子材料。或更少。构成：该电子材料基于Al，并且包括含有添加到Al中的贵金属的合金，并且是其中贵金属的含量对应于可接受的组分的材料。具有主晶体Al以下。当将该材料用于连接包含形成在半导体元件上的Al气相沉积膜和外部引线的布线膜的细线时，其结合能力与Al的程度相同。另外，能够防止由合成树脂密封的半导体装置中的细线或Al蒸镀膜的腐蚀。在这种情况下，当以上述量使用贵金属的含量时，其作为共晶晶体精细结晶，并且获得具有高塑性加工性的产品，并且进一步获得固相连接的高粘结性。

93. 发明专利

JPS58202996A Brazing method 失效
标题翻译：制动方法
公开(公告)号：JPS58202996A
公开(公告)日：1983-11-26
申请号：JP8482682
申请日：1982-05-21
申请人： Hitachi Ltd
发明人： SHIODA KATSUHIKO , FUKUMAKI TAKASHI , OGURA SATOSHI , ASAI OSAMU , TOMOSAKI RIYOUZOU , UCHIDA TAKESHI , FUNAMOTO TAKAO
IPC分类号： B23K31/02 , B23K35/36 , B23K35/363
CPC分类号： B23K35/3605
摘要： PURPOSE:To improve the corrosion resistance in a brazed part and to eliminate the need for removing the remaining flux, by using KAlF4 in the form of an aq. soln. for the flux to be used in the stage of brazing Al or an Al alloy. CONSTITUTION:KF and AlF3 are mixed at 50:50-47:53 ratio in mol%, and the mixture is heated to melt in a graphite crucible in inert gaseous atmosphere; thereafter, the molten metal is poured in a graphite mold and is solidified, whereby KAlF4 having 560-574 deg.C melting temp. is prepd. The alloy is ground to
摘要翻译：目的：为了提高钎焊部件的耐腐蚀性，并且通过使用水溶液形式的KAlF4来消除去除剩余焊剂的需要。索恩因为焊剂用于钎焊Al或Al合金的阶段。构成：将KF和AlF3以摩尔％计以50:50-47:53的比例混合，并将混合物在惰性气体气氛中在石墨坩埚中加热熔化; 此后，将熔融金属倒入石墨模具中并固化，由此得到具有560-574℃熔融温度的KAlF 4。是prepd 将合金研磨至<= 200目，以制备用于钎焊Al或Al合金的助熔剂。助熔剂溶于水中至约10％浓度。水。。索恩作为用于钎焊Al或Al合金的焊剂作为钎焊部分被钎焊，并与钎焊材料一起加热到590-620℃钎焊温度。在惰性气体气氛中形成具有高耐腐蚀性的钎焊部分。由于KAlF4没有吸湿性，所以消除了残留在钎焊部件中的焊剂的劳动。

94. 发明专利

JPS5877019A THIN FILM MAGNETIC HEAD 失效
公开(公告)号：JPS5877019A
公开(公告)日：1983-05-10
申请号：JP16646082
申请日：1982-09-27
申请人： HITACHI LTD
发明人： HANAZONO MASANOBU , TAMURA KATSU , ASAI OSAMU , NEMOTO KEITAROU , GOUHARA YOSHIO
IPC分类号： G11B5/31
摘要： PURPOSE:To avoid the disconnection of a conductor film and the short circuit between the conductor film and a magnetic film, by extending an insulated film formed between a lower magnetic film and the conductor film up to an area where the conductor film is formed on a substrate and having a substantially flat surface of the insulated film where the conductor film is formed. CONSTITUTION:A lower magnetic film 2 is formed on a substrate 1 and then covered by an organic resin film 3. The film 3 has a larger thickness than the film 2 to avoid the unevenness of film surface between the area having the film 2 and the area having no film 2. A conductor film 4 is formed on the film 3 with a partial cross with the film 2. An end 51 of an upper magnetic film 5 has a contact with an end of the film 2 through a window part of the film 3; while the other end 52 is set opposite to the other end of the film 2 via a magnetic gap G. In such way, the films 2 and 4 are formed. The film 5 has a magnetic gap at a part like the film 2 and crosses a coil formed with the film 4 and forms a magnetic circuit.

95. 发明专利

JPS5814917A AMORPHOUS METAL STRIP AND PREPARATION THEREOF 失效
公开(公告)号：JPS5814917A
公开(公告)日：1983-01-28
申请号：JP11073481
申请日：1981-07-17
申请人： HITACHI LTD , HITACHI PLANT ENG & CONSTR CO
发明人： NAGAI SHIYOUICHI , ISHIHARA JIYOU , MINEMURA TETSUO , TAMAMURA TATEO , ASAI OSAMU , HAYATA FUMITAKA , YUGAWA TAKAO
IPC分类号： D01F9/08 , B01D35/06 , B03C1/034 , B22D11/06 , C22C38/18 , C22C45/02 , H01F7/02
摘要： PURPOSE:To easily prepare a non-flat amorphous metal strip having a large surface area per unit length as well as having a uniform thickness and excellent in durability, by injecting a molten metal to a roll having recessed and protruded parts provided to the surface thereof to rapidly cool and solidify the same. CONSTITUTION:A molten metal 1 of a pure metal or an alloy is injected to the surface of a rotary roll 4 from a nozzle 3 while held to an appropirate temp. by a heater 2 and cooled rapidly to obtain a metal strip 5. To the surface of the roll 4, recessed and protruded parts are provided by forming grooves toward a direction parallel with the axis of the roll 4 or forming curved grooves of which the cross area shape in a peripheral direction is a sine wave form. The cross area shape of the metal strip 5 obtained by this method in a longitudinal direction shows a non-flat shape such as a continuous truncated shape or a sine wave shape. In addition, when the molten metal is solidified, affect of surface tension is made small in a free solidified surface having recessed and protruded parts and, therefore, the thickness of the metal strip is made uniform.

96. 发明专利

JPS5336257A LIQUID CRYSTAL DISPLAY ELEMENT AND ITS PRODUCTION 失效
公开(公告)号：JPS5336257A
公开(公告)日：1978-04-04
申请号：JP10990576
申请日：1976-09-16
申请人： HITACHI LTD
发明人： OOGAMI MICHIO , ASAI OSAMU , IWASAKI KISHIROU
IPC分类号： C23C14/24 , G02F1/13 , G02F1/1337 , G09F9/00
摘要： PURPOSE:The direction in twist in liquid crystal layer is unified and the improvement in orientation characteristics is achieved by opposing orientation control films having biaxial anisotropy so as to let the anisotropy intersect perpendicularly and sealing liquid crystal therebetween.

97. 发明专利

JPS5328295A CONSTRUCTING NICRRAUUSIO2 CONDUCTOR 失效
公开(公告)号：JPS5328295A
公开(公告)日：1978-03-16
申请号：JP10160376
申请日：1976-08-27
申请人： HITACHI LTD
发明人： TAMURA TSUYOSHI , KAEN MASANOBU , ASAI OSAMU
IPC分类号： H05K1/09 , H01B5/14 , H05K3/00 , H05K3/14 , H05K3/46
摘要： PURPOSE:To shorten a length of time for the work process with adhesiveness increased between Au and SiO2, by applykng NiCr as the first coat on Au layer when constructing a thin film circuit with Au used for the conductor and with SiO2 used for the insulating unit.

98. 发明专利

JPS52135713A FORMATION OF MAGNETIC HEAD 失效
公开(公告)号：JPS52135713A
公开(公告)日：1977-11-14
申请号：JP5223976
申请日：1976-05-10
申请人： HITACHI LTD
发明人： KAEN MASANOBU , TAMURA TSUYOSHI , ASAI OSAMU , NEMOTO KEITAROU , SATOHARA YOSHIO
IPC分类号： G11B5/17 , G11B5/31
摘要： PURPOSE:To provide a method for forming a magnetic head by using thin film technique, in which there is employed an organic resin to insulate between conductor and magnetic body and between conductor layers to improve insulating property and close adhesion.

99. 发明专利

JPS5252656A FORMATION OF ORIENTATION CONTROL FILM OF LIQUID CRYSTAL DISPLAY ELEMEN T 失效
公开(公告)号：JPS5252656A
公开(公告)日：1977-04-27
申请号：JP12839175
申请日：1975-10-27
申请人： HITACHI LTD
发明人： OOGAMI MICHIO , ASAI OSAMU , IWASAKI KISHIROU
IPC分类号： C23C14/50 , G02F1/1337
摘要： PURPOSE:To form an orientation control film by placing on a substrate on which an electrode is formed a grid through which evaporated particles having a desired angle of incidence with respect to the substrate are passed, and depositing said particles on the substrate through said grid.

100. 发明专利

JPS5245357A METHOD OF PREPARING AN ORIENTATION CONTROL FILM FOR A LIQUID CRYSTAL DISPL AY ELEMENT 失效
公开(公告)号：JPS5245357A
公开(公告)日：1977-04-09
申请号：JP12064775
申请日：1975-10-08
申请人： HITACHI LTD
发明人： IWASAKI KISHIROU , OOGAMI MICHIO , ASAI OSAMU
IPC分类号： C23C14/00 , C23C14/24 , G02F1/13 , G02F1/1337 , G09F9/00
摘要： PURPOSE:To subject to vacuum vapor deposition an orientation control film for an electric field type liquid crystal display element, which shows an excellent orientating property; this being accomplished by providing a grating for passing only the particles in a given incident direction.

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