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91. 发明专利

JPS5967643A Wire bonder 失效
标题翻译： WIRE BONDER
公开(公告)号：JPS5967643A
公开(公告)日：1984-04-17
申请号：JP17766282
申请日：1982-10-12
申请人： Hitachi Ltd
发明人： OKAMOTO MICHIO , OKIKAWA SUSUMU
IPC分类号： H01L21/60
CPC分类号： H01L2224/45 , H01L2224/45124 , H01L2224/78 , H01L2224/78268 , H01L2224/78301 , H01L2224/85 , H01L2224/85045 , H01L2224/85075 , H01L2924/00014 , H01L2924/01013 , H01L2924/0104 , H01L2924/01074 , H01L2224/48 , H01L2924/00012 , H01L2924/00
摘要： PURPOSE:To prevent the eccentricity of a ball for bonding by disposing a metal easy to discharge electrons to one part of an electrode to which the tip of an Al wire is opposed. CONSTITUTION:The electrode 19, particularly, a discharge section 19a, is formed by a metal, such as stainless, tungsten, etc., but the metal easy to discharge electrons, a metal 20 through which discharge is easy to be generated, is buried at a position on the extension of the core center line of the Al wire 14. There are thorium tungsten, zirconium tungsten, aluminum oxide, etc. as the metal. It is preferable that the metal 20 is formed in a small area as much as possible in a limit where necessary discharge is obtained. Accordingly, the ball formed at the tip of the wire 14 is formed at a position just under the Al wire at all times because a discharge arc is directed in the core center line direction of the Al wire at all times, thus positively preventing the eccentricity of the ball.
摘要翻译：目的：为了防止用于接合的球的偏心，通过设置易于将电子放电到Al线的尖端相对的电极的一部分的金属。结构：电极19，特别是放电部分19a由诸如不锈钢，钨等的金属形成，但容易放电的金属，容易产生放电的金属20被埋入在Al线14的芯中心线的延伸位置。作为金属，有钨，钨，钨，钨，钨等。优选的是，在获得必要的放电的极限的情况下，尽可能多地形成金属20。因此，由于放电电弧一直沿着Al线的芯线中心线方向一直形成在铝线的正下方的位置处，因此积极地防止偏心的球。

92. 发明专利

JPS5889851A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5889851A
公开(公告)日：1983-05-28
申请号：JP18701881
申请日：1981-11-24
申请人： HITACHI LTD , HITACHI OME ELECTRONIC CO
发明人： YOSHIDA HISASHI , OKIKAWA SUSUMU
IPC分类号： H01L21/60 , H01L23/49
摘要： PURPOSE:To reduce the cost of a material by partially replacing a noble metal wire as a connecting wire between an element and a lead with a base metal wire. CONSTITUTION:A signal wire 12a between the connecting wires 12 is an Au wire and a power wire 12b is an Al wire. Accordingly, the cost of the device can be reduced without damaging reliability as a whole by forming one part of the connecting wires, particularly, a wire which is difficult to be disconnected or corroded, by the low-cost material except the noble metals. When the surface of the element 11 is downward directed without using connecting wires and connected to leads 13 through bumps 15, it is also though that the quality of materials of several kinds is used while balancing reliability and cost in consideration of the quality of materials to be attached without limiting the quality of materials of the bumps to one kind.

93. 发明专利

JPS5852860A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS5852860A
公开(公告)日：1983-03-29
申请号：JP15060281
申请日：1981-09-25
申请人： HITACHI LTD
发明人： SATOU HAJIME , SUZUKI HIROMICHI , OOTSUKA KENICHI , OKIKAWA SUSUMU
IPC分类号： H01L23/50 , H01L21/56 , H01L23/495
摘要： PURPOSE:To make the soldering property highly reliable by employing less man hours and at low cost by a method wherein, when the semiconductor devices such as IC and LSI are actually installed on substrate, lead layer and tin layer are successively and separately formed on the surface of lead frame before assembling operation such as pelleting on lead frame and the like is performed. CONSTITUTION:The lead plated layer 2 is formed on the outer lead 1A only of lead frame 1 and tin plated layer 3 is successively and separately formed on said layer 2, while the inner lead 1B of lead from 1 and the tab 1C for pelleting are not plated with Pb, Sn at all. The plated layers 2 and 3 are formed before the assembling operation such as pelleting is performed on the tab 1C of lead frame 1. The tin plated layer 3 is formed on the lead plated layer 2 formed as the primary plated layer. The soldering property may be made highly reliable since the lead shall not be oxidized even by heating at high temperature.

94. 发明专利

JPS5851543A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5851543A
公开(公告)日：1983-03-26
申请号：JP14943681
申请日：1981-09-24
申请人： HITACHI LTD
发明人： SATOU HAJIME , OOTSUKA KENICHI , SUZUKI HIROMICHI , OKIKAWA SUSUMU
IPC分类号： H01L23/04 , H01L23/02 , H01L23/10
摘要： PURPOSE:To enhance the reliability of sealing of a ceramic base sealing gold layer cap by plating a metallic layer made of a lead layer and a tin layer on the sealing surface side of the cap, thereby improving the wettability of the solder of the gap. CONSTITUTION:A lead layer 22 and a tin layer 24 are sequentially plated as two layers on the entire surface of a sealing surface side of a cap 18 made of iron series material. A metallized layer 20 is formed on the sealing part of a ceramic base 10. A tin or silver plating layer is preferably formed on the upper surface of the layer 20. The sealing is performed by placing a semiconductor pellet 12, bonding a wire 14 and then soldering the metallized layer of the cap 18 and the ceramic base 10. In this manner, it is not necessary to use expensive gold, and since the surface of the layer 22 is covered with the layer 24, the wettability of the solder is improved, thereby effectively sealing it.

95. 发明专利

JPS5835949A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5835949A
公开(公告)日：1983-03-02
申请号：JP13402581
申请日：1981-08-28
申请人： HITACHI LTD
发明人： OONUKI HITOSHI , KOIZUMI MASAHIRO , TAMAMURA TATEO , IIZUKA TOMIO , OKIKAWA SUSUMU , KATOU HIROSHI
IPC分类号： H01L23/50 , H01L21/48 , H01L21/60 , H01L23/495
摘要： PURPOSE:To obtain the semiconductor device of an excellent bonding property with Al at low cost by a method wherein an Ni film is formed on a lead frame by performing an electroplating, and the p-content of the film is adjusted so that it will be within the range of 5-25wt%. CONSTITUTION:An Ni electroplating can be performed at a speed approximately ten times as fast as that of a chemical Ni (non-electrolytic Ni), and this enables to cut down the cost of production. The roughness of the surface of the film can also be made smoother, and the density of p which affects on the bonding efficiency with an Al can be controlled by increasing or decreasing the quantity of the phosphorus acid and phosphorus in the electrolyte. Besides, in the case of the electroplating, the surface of the plated film can be made smoother than that of the chemical plating, and the surface of the former can also be cleaned easier than that of the latter. When the p-content of the film is controlled within the range of 5-25wt%, the shearing strength at the junction part can be made larger and the neck strength can also be made layer, even when the collapsed width is made smaller than that of the chemical plating when the Al wires are connected. As a result, a highly reliable device having no breaking of wire and exfoliation at the junction part can be obtained.

96. 发明专利

JPS5827349A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5827349A
公开(公告)日：1983-02-18
申请号：JP12519381
申请日：1981-08-12
申请人： HITACHI LTD
发明人： MIKINO HIROSHI , KITAMURA WAHEI , OKIKAWA SUSUMU
IPC分类号： H01L23/28 , H01L21/60 , H01L23/31
摘要： PURPOSE:To prevent the isolation between resin and a pellet even if a shearing stress is created between the resin and a lead frame by forming a groove on the periphery of the pad on the surface of the pellet and constructing to fill the molded resin in the groove. CONSTITUTION:A plurality of leads 12 are arranged on the periphery of a central tab 11 of a lead frame 10, and the tab 11 is integrally formed with the lead 12 through a tab lead 13 and a frame. A semiconductor element pellet 14 is secured onto the tab 11, and a plurality of pads 15 are respectively connected via the lead 12 and the wire 16. Then, the resin 17 is integrally molded to seal the tab 11, the pellet 14, the inner part of the lead 12 and the tab lead 13. The pellet 14 forms a groove 18 at the periphery disposed at the periphery of each pad 15, and is molded to fill the part in the groove 18.

97. 发明专利

JPS57192057A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57192057A
公开(公告)日：1982-11-26
申请号：JP7655881
申请日：1981-05-22
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , SATOU HAJIME , SUZUKI HIROMICHI , OOTSUKA KENICHI
IPC分类号： H01L21/52 , H01L21/60 , H01L23/495 , H01L23/50
摘要： PURPOSE:To reduce the cost for attaching a pellet, by plating phosphorous nickel to at least the inner lead part of the pellet attaching part of a substrate. CONSTITUTION:A phosphorous nickel plated layer 14 is provided on a tab 12 of a lead frame 11 and a wire bonding part of the inner lead 13. A solder plated layer 15 is formed on the layer 14. Then, the lead frame 11 is heated, the solder plated layer 15 is fused, and a fused alloy layer is formed. The semiconductor pellet 16 is placed on the alloy layer and scribing work is performed. Then the treated layer of the back surface of the semiconductor pellet 16 is fused with the fused alloy layer so as to form a unitary body, and it is cooled and solidified again. Thus the fixing is ensured.

98. 发明专利

JPS5736850A Lead frame 失效
标题翻译：空值
公开(公告)号：JPS5736850A
公开(公告)日：1982-02-27
申请号：JP11172080
申请日：1980-08-15
申请人： Hitachi Ltd
发明人： OKIKAWA SUSUMU , OOTSUKI KEIZO , PPONMA KYOSHI , SUZUKI HIROMICHI , KITAMURA WAHEI , SATO HAJIME , MIKINO HIROSHI
IPC分类号： H01L23/50 , H01L23/495
CPC分类号： H01L23/49541 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To improve the yield of a lead frame material by extending at the one ends of lead patterns in the amount of 1/2 of a lead pitch so that the tabs of the adjacent lead patterns of every other lead patterns are disposed in the same row and contracting the other ends of the lead patterns. CONSTITUTION:The outer leads 10 of a lead pattern 1 are so arranged as to be engaged with the outer leads 10 of the adjacent lead patterns 1 to be displaced toward the width of the lead frame by 1/2 of a lead pitch a with each other, to dispose the adjacent tabs on the same row, one ends of the inner leads 9 of every other lead patterns extend by a/2, and the other ends of the inner leads are contracted by a/2. In this manner, the yield of the lead frame material can be improved and since the tabs are aligned in one row along the longitudinal direction, the automation of bonding the pellets can be simplified.
摘要翻译：目的：通过以引线间距的1/2的量在引线图案的一端处延伸以使得每个其它引线图案的相邻引线图案的突片设置在同一个引线图案中来提高引线框架材料的产量排列并收缩引线图案的另一端。构成：引线图案1的外引线10被布置为与相邻引线图案1的外引线10接合，以朝向引线框架的宽度移位1/2的引线间距a，另一方面，为了将相邻的突片设置在同一行上，每个其它引线图案的内引线9的一端延伸一个/ 2，内引线的另一端收缩一个/ 2。以这种方式，可以提高引线框架材料的产量，并且由于突片沿着纵向排列成一排，所以可以简化粘合颗粒的自动化。

99. 发明专利

JPS5662349A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5662349A
公开(公告)日：1981-05-28
申请号：JP13765479
申请日：1979-10-26
申请人： HITACHI LTD
发明人： SUZUKI HIROMICHI , OKIKAWA SUSUMU
IPC分类号： H01L23/50 , H01L23/36
摘要： PURPOSE:To improve the heat dissipating effect by arranging a semiconductor pellet and an outer lead in parallel with each other on a lead substrate of a high conductivity with a lead of copper foil formed thereon through an insulator layer. CONSTITUTION:An insulator layer 12 of a high conductivity is formed on the surface of a lead substrate 11 made up to a highly conductive material with a large thickness. A copper foil 16 is used on the top of an insulator layer 12 to form a lead of a given pattern. Then, a semiconductor pellet 18 is fastened at a position on one side of the lead substrate 11 while an outer lead 15 of the lead is arranged in parallel on the other thereof. Upper and lower caps 20 and 21 are packaged so as to seal the semiconductor pellet 18.

100. 发明专利

JPS5662348A SEMICONDUCTOR DEVICE AND PRODUCTION THEREOF 失效
公开(公告)号：JPS5662348A
公开(公告)日：1981-05-28
申请号：JP13765079
申请日：1979-10-26
申请人： HITACHI LTD
发明人： SUZUKI HIROMICHI , OKIKAWA SUSUMU
IPC分类号： H01L23/50 , H01L21/60 , H01L23/28
摘要： PURPOSE:To better wetting for a pellet and a solder by forming solder layers of a high melting point on bonding sections of a semiconductor pellet and a wire on a lead frame while solder layer of a low melting point are formed on other portions thereof. CONSTITUTION:A low-melting-point solder 8 is plated over the entire surface of a lead frame 1. A high-melting-point solder 7 is plated on a portion for bonding of a semiconductor pellet 5 and a wire 6. After treated on the back properly, the semiconductor pellet 5 and the wire 6 are separately fused by heat on the plated portions of the solder. Then, they are sealed up with a resin 9.

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