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91. 发明申请

US20050250294A1 Method for forming a relaxed or pseudo-relaxed useful layer on a substrate 有权
标题翻译：在基材上形成松弛或假松弛有用层的方法
公开(公告)号：US20050250294A1
公开(公告)日：2005-11-10
申请号：US11181414
申请日：2005-07-13
申请人： Bruno Ghyselen
发明人： Bruno Ghyselen
IPC分类号： H01L21/762 , H01L21/339 , C30B1/00 , H01L21/20 , H01L21/30 , H01L21/301 , H01L21/36 , H01L21/46 , H01L21/78
CPC分类号： H01L21/76254 , H01L21/76259
摘要： A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a material that becomes viscous above a certain viscosity temperature to form a first structure. The method further includes detaching the donor substrate from the first structure to form a second structure comprising the receiver substrate, the vitreous layer, and the strained layer, and then heat treating the second structure at a temperature and time sufficient to relax strains in the strained semiconductor layer and to form a relaxed or pseudo-relaxed useful layer on the receiver substrate.
摘要翻译：描述了在衬底上形成松弛或假松弛有用层的方法。该方法包括在施主衬底上生长应变半导体层，通过在某一粘度温度下变得粘稠的材料的玻璃质层将接收器衬底接合到应变半导体层以形成第一结构。该方法还包括从第一结构分离施主衬底以形成包括接受衬底，玻璃体层和应变层的第二结构，然后在足够的温度和时间对第二结构进行热处理，以缓解应变中的应变并且在接收器基板上形成松弛或假松弛的有用层。

92. 发明申请

US20050233544A1 Method of smoothing the outline of a useful layer of material transferred onto a support substrate 审中-公开
标题翻译：平滑转移到支撑衬底上的有用材料层轮廓的方法
公开(公告)号：US20050233544A1
公开(公告)日：2005-10-20
申请号：US11153955
申请日：2005-06-15
申请人： Bruno Ghyselen
发明人： Bruno Ghyselen
IPC分类号： H01L21/30 , H01L21/762
CPC分类号： H01L21/76259 , H01L21/76254
摘要： A method of providing a regular outline in a useful layer of material that is transferred from a source substrate onto a support substrate during the fabrication of a composite substrate for subsequent use in electronics, optics, or optoelectronics. The technique includes providing a shoulder on a front face of one of the source or support substrates about its periphery. The shoulder defines an inner projecting zone that has a top face, a sidewall and a regular outline. Next, the method includes molecularly bonding the top face of the projecting zone to a receiving face of the other of the source or support substrates, and removing a portion of the projecting zone from the source substrate to provide the useful layer having the regular outline on the support substrate.
摘要翻译：在制造用于电子学，光学或光电子学的复合衬底的制造期间，在有用的材料层中提供从源衬底转移到支撑衬底上的规则轮廓的方法。该技术包括在其周围的源或支撑基板之一的前表面上提供肩部。肩部限定具有顶面，侧壁和规则轮廓的内部突出区域。接下来，该方法包括将突出区域的顶面分别结合到源或支撑衬底中的另一个的接收面，以及从源衬底去除突出区域的一部分，以提供具有规则轮廓的有用层支撑基板。

93. 发明授权

US06908774B2 Method and apparatus for adjusting the thickness of a thin layer of semiconductor material 有权
标题翻译：调整半导体材料薄层厚度的方法和装置
公开(公告)号：US06908774B2
公开(公告)日：2005-06-21
申请号：US10637078
申请日：2003-08-06
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud
IPC分类号： H01L21/66 , H01L31/26
CPC分类号： H01L22/20 , H01L22/12 , Y10S438/981
摘要： A method for adjusting the thickness of a thin semiconductor material layer. The method includes measuring the layer to establish a thickness profile, determining thickness adjustment specifications from the measured thickness profile, and adjusting the thickness of the layer in accordance with the specifications by sacrificial oxidation. An apparatus for adjusting the thickness of a thin layer of semiconductor material according to this method is also disclosed.
摘要翻译：一种用于调整薄的半导体材料层的厚度的方法。该方法包括测量层以建立厚度分布，根据测量的厚度分布确定厚度调整规格，以及根据牺牲氧化的规格调整层的厚度。还公开了一种用于根据该方法调整半导体材料薄层的厚度的装置。

94. 发明授权

US06855619B2 Method and device for making substrates 有权
标题翻译：制造基材的方法和装置
公开(公告)号：US06855619B2
公开(公告)日：2005-02-15
申请号：US10239869
申请日：2001-04-02
申请人： Atsushi Iwasaki , Bruno Ghyselen
发明人： Atsushi Iwasaki , Bruno Ghyselen
IPC分类号： C30B29/06 , C30B31/22 , C30B33/00 , H01L21/762 , H01L21/322
CPC分类号： C30B29/06 , C30B31/22 , C30B33/00 , H01L21/76254
摘要： The invention concerns a method for making substrates, in particular for optics, electronics or optoelectronics. The method includes an operation which consists in implanting (100) atomic species beneath the surface of a material in the form of a cylindrical ingot (1), at a depth of implantation distributed about a certain value by bombardment of the atomic species on a zone of the ingot (1) cylindrical surface, and an operation which consists in removing (300), at a separation depth located proximate to the depth of implantation, the layer (2) of material located between the surface and the separation depth, to remove the layer (2) from the rest of the cylindrical ingot (1).
摘要翻译：本发明涉及一种制造衬底的方法，特别是用于光学，电子学或光电子学的方法。该方法包括一种操作，其包括在圆柱形铸锭（1）形式的材料的表面下方植入（100）原子物质，通过在区域上轰击原子物质而分布在约一定值上的注入深度（1）圆柱形表面的操作，以及一种操作，其包括在位于植入深度附近的分离深度处移除（300）位于表面和分离深度之间的材料层（2），以移除来自圆柱形锭（1）的其余部分的层（2）。

95. 发明申请

US20050023610A1 Semiconductor-on-insulator structure having high-temperature elastic constraints 审中-公开
标题翻译：具有高温弹性约束的绝缘体上半导体结构
公开(公告)号：US20050023610A1
公开(公告)日：2005-02-03
申请号：US10700896
申请日：2003-11-03
申请人： Bruno Ghyselen , Cecile Aulnette , Olivier Rayssac
发明人： Bruno Ghyselen , Cecile Aulnette , Olivier Rayssac
IPC分类号： H01L21/762 , H01L27/01
CPC分类号： H01L21/76251
摘要： A semiconductor-on-insulator structure for electronics, optics or optoelectronics, in which a semiconductor layer includes desirable elastic constraints. The structure includes a substrate, an insulating layer on the substrate, and a semiconductor layer on the insulating layer. The semiconductor layer has elastic constraints, and the insulating layer is made of an electrically insulating material having a viscosity temperature TG that is sufficiently high so as to protect the semiconductor layer from loss of the elastic constraints when the structure is exposed to a temperature of about 950° C. or more. Also described is a process for producing such a semiconductor-on-insulator structure.
摘要翻译：用于电子，光学或光电子学的绝缘体上半导体结构，其中半导体层包括期望的弹性约束。该结构包括衬底，衬底上的绝缘层和绝缘层上的半导体层。半导体层具有弹性约束，并且绝缘层由具有足够高的粘度温度TG的电绝缘材料制成，以便当该结构暴露于大约的温度时保护半导体层免于弹性约束的损失 950℃以上。还描述了一种用于制造这种绝缘体上半导体结构的方法。

96. 发明授权

US5378683A Josephson junction structure 失效
标题翻译：约瑟夫逊结结构
公开(公告)号：US5378683A
公开(公告)日：1995-01-03
申请号：US871537
申请日：1992-04-21
申请人： Regis Cabanel , Guy Garry , Alain Schuhl , Bruno Ghyselen
发明人： Regis Cabanel , Guy Garry , Alain Schuhl , Bruno Ghyselen
IPC分类号： H01L39/22 , H01L39/12 , H01B12/00
CPC分类号： H01L39/225 , Y10S505/70 , Y10S505/702 , Y10S505/779 , Y10S505/78 , Y10S505/874
摘要： The disclosure relates to a Josephson junction formed by a non-superconducting barrier between two superconducting films of the (R) BaCuO (R=rare earth) group. In order to take advantage of the greater coherence length of superconductors along the CuO planes, i.e. perpendicularly to the long axis "c" of the crystal unit cell, the superconducting film is oriented so that the axis "c" is parallel to the plane of the junction. The device can be applied to Josephson junctions and to SQUIDs.
摘要翻译：本公开涉及由（R）BaCuO（R =稀土）基团的两个超导膜之间的非超导屏障形成的约瑟夫逊结。为了利用沿着CuO平面的超导体的较大相干长度，即垂直于晶体单元的长轴“c”的优点，超导膜被定向成使得轴线“c”平行于交界处。该设备可以应用于约瑟夫逊路口和SQUID。

97. 发明授权

US10014803B2 Active cooling for a concentrated photovoltaic cell 有权
公开(公告)号：US10014803B2
公开(公告)日：2018-07-03
申请号：US14233685
申请日：2012-07-20
申请人： Rainer Krause , Bruno Ghyselen
发明人： Rainer Krause , Bruno Ghyselen
IPC分类号： H01L31/052 , H01L37/04 , H02S40/44 , H02N11/00 , H01F41/14
CPC分类号： H02N11/002 , H01F41/14 , H01L31/052 , H01L37/04 , H02S40/44 , Y02E10/50 , Y10T29/4902
摘要： A wasted heat harvesting device for harvesting electricity including a switching device configured to convey a magnetic field from a first region to at least a second region when the temperature of the switching device crosses a predetermined temperature.

98. 发明授权

US08173512B2 Forming structures that include a relaxed or pseudo-relaxed layer on a substrate 有权
标题翻译：在基材上包含松弛或假松弛层的成形结构
公开(公告)号：US08173512B2
公开(公告)日：2012-05-08
申请号：US13080436
申请日：2011-04-05
申请人： Bruno Ghyselen , Carlos Mazure , Emmanuel Arene
发明人： Bruno Ghyselen , Carlos Mazure , Emmanuel Arene
IPC分类号： H01L21/76
CPC分类号： H01L21/76259 , H01L21/324 , H01L21/76254 , H01L2221/68363
摘要： A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.
摘要翻译：一种用于形成在衬底上包括松弛或假松弛层的结构的方法。该方法包括在施主衬底上生长半导体材料的弹性应力层的步骤; 在应力层上形成粘性材料的玻璃状层; 去除供体衬底的一部分以形成包括玻璃层，应力层和供体衬底材料的表面层的结构; 图案化应力层; 并且在至少玻璃质层的粘度温度的温度下对结构进行热处理，以使应力层松弛以形成结构的松弛或假松弛层。

99. 发明申请

US20110217825A1 FORMING STRUCTURES THAT INCLUDE A RELAXED OR PSEUDO-RELAXED LAYER ON A SUBSTRATE 有权
标题翻译：在基材上包含松散或松散层的形成结构
公开(公告)号：US20110217825A1
公开(公告)日：2011-09-08
申请号：US13080436
申请日：2011-04-05
申请人： Bruno Ghyselen , Carlos Mazure , Emmanuel Arene
发明人： Bruno Ghyselen , Carlos Mazure , Emmanuel Arene
IPC分类号： H01L21/762
CPC分类号： H01L21/76259 , H01L21/324 , H01L21/76254 , H01L2221/68363
摘要： A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.
摘要翻译：一种用于形成在衬底上包括松弛或假松弛层的结构的方法。该方法包括在施主衬底上生长半导体材料的弹性应力层的步骤; 在应力层上形成粘性材料的玻璃状层; 去除供体衬底的一部分以形成包括玻璃层，应力层和供体衬底材料的表面层的结构; 图案化应力层; 并且在至少玻璃质层的粘度温度的温度下对结构进行热处理，以使应力层松弛以形成结构的松弛或假松弛层。

100. 发明申请

US20110214806A1 INGOT FORMED FROM BASIC INGOTS, WAFER MADE FROM SAID INGOT AND ASSOCIATED METHOD 审中-公开
标题翻译：从基本入口形成的成分，由已知的和相关的方法制成的
公开(公告)号：US20110214806A1
公开(公告)日：2011-09-08
申请号：US13128609
申请日：2009-11-26
申请人： Bruno Ghyselen
发明人： Bruno Ghyselen
IPC分类号： B32B37/14 , B32B37/02 , B32B37/06 , B32B37/10 , B32B38/10 , B32B37/12
CPC分类号： C30B29/403 , C30B29/06 , C30B29/30 , C30B29/406 , C30B33/06
摘要： A method for manufacturing a heterostructure for use in applications in the electronics, optical and optoelectronics fields, by implanting atomic species inside a first substrate called “donor” substrate, so as to form an embrittlement area therein, assembling a second substrate, called “recipient” substrate, on the donor substrate, detaching the rear portion of the donor substrate along the embrittlement area, so as to customize a thin layer of interest on the recipient substrate, wherein the donor substrate is an ingot or an ingot section formed from at least two basic ingots assembled together along two of their respective complementary longitudinal surfaces.
摘要翻译：一种用于制造用于电子学，光学和光电子学领域的异质结构的方法，通过将原子物质注入称为“供体”衬底的第一衬底内，以在其中形成脆化区域，组装第二衬底，称为“接收体 “在施主衬底上的衬底，沿着脆化区域分离施主衬底的后部，以便在受体衬底上定制感兴趣的薄层，其中施主衬底是至少形成的晶锭或锭块两个基本的锭沿其相应的互补纵向表面中的两个组装在一起。

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