专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US08138561B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM 有权
标题翻译：用于制造自旋转矩（STT）-RAM的高性能MTJ装置的结构和方法
公开(公告)号：US08138561B2
公开(公告)日：2012-03-20
申请号：US12284066
申请日：2008-09-18
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

92. 发明授权

US08062909B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US08062909B2
公开(公告)日：2011-11-22
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

93. 发明授权

US08039885B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08039885B2
公开(公告)日：2011-10-18
申请号：US12661345
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

94. 发明授权

US07750620B2 MTJ sensor based method to measure an electric current 有权
标题翻译：基于MTJ传感器的测量电流的方法
公开(公告)号：US07750620B2
公开(公告)日：2010-07-06
申请号：US12321841
申请日：2009-01-26
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： G01R15/18 , G01R11/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R15/205 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3277 , H01F41/302
摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.
摘要翻译：通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件，产生在大的杂散场存在下稳定的磁性检测器，从而不需要纵向偏置磁体。所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

95. 发明授权

US07613868B2 Method and system for optimizing the number of word line segments in a segmented MRAM array 失效
标题翻译：用于优化分段MRAM阵列中字线段数量的方法和系统
公开(公告)号：US07613868B2
公开(公告)日：2009-11-03
申请号：US10865717
申请日：2004-06-09
申请人： Hsu Kai (Karl) Yang , Xizeng Shi , Po-Kang Wang , Bruce Yee Yang
发明人： Hsu Kai (Karl) Yang , Xizeng Shi , Po-Kang Wang , Bruce Yee Yang
IPC分类号： G06F13/16 , G11C11/15
CPC分类号： G11C11/15 , G11C8/14
摘要： A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segments at substantially the same time as the portion of the magnetic cells are written.
摘要翻译：公开了一种用于编程和读取磁存储器的方法和系统。磁存储器包括多个可选字线段和对应于每个字线段的多个磁存储单元。该方法和系统包括读取对应于字线段的磁存储单元以确定每个磁存储单元的状态。该方法和系统还包括在读取之后将数据写入对应于字线段的磁性单元的一部分。所述方法和系统还包括将所述状态重写为与写入所述磁性单元的所述部分基本相同的时间对应于所述字线段的所述磁存储单元的剩余部分。

96. 发明申请

US20090268344A1 Graded bevel tapered write pole design for field enhancement 有权
标题翻译：分级斜面锥形写柱设计用于场增强
公开(公告)号：US20090268344A1
公开(公告)日：2009-10-29
申请号：US12150553
申请日：2008-04-29
申请人： Lijie Guan , Po-Kang Wang , Moris Dovek , Joe Smyth , Kenichi Takano , Yoshitaka Sasaki
发明人： Lijie Guan , Po-Kang Wang , Moris Dovek , Joe Smyth , Kenichi Takano , Yoshitaka Sasaki
IPC分类号： G11B5/23
CPC分类号： G11B5/1278 , G11B5/232 , G11B5/3116 , G11B5/3146
摘要： A structure and a process for a perpendicular write pole that provides increased magnetic flux at the ABS is disclosed. This is accomplished by increasing the amount of write flux that originates above the write gap, without changing the pole taper at the ABS. Three embodiment of the invention are discussed.
摘要翻译：公开了一种用于在ABS处提供增加的磁通量的垂直写入极的结构和工艺。这是通过增加起始于写入间隙的写入通量的量来实现的，而不改变ABS处的极锥度。讨论本发明的三个实施例。

97. 发明授权

US07609543B2 Method and implementation of stress test for MRAM 有权
标题翻译： MRAM应力测试方法与实现
公开(公告)号：US07609543B2
公开(公告)日：2009-10-27
申请号：US11904434
申请日：2007-09-27
申请人： Hsu Kai Yang , Lejan Pu , Perng-Fei Yuh , Po-Kang Wang
发明人： Hsu Kai Yang , Lejan Pu , Perng-Fei Yuh , Po-Kang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C29/06 , G11C29/08 , G11C29/12005
摘要： Voltage and current stress for magnetic random access memory (MRAM) cells can weed out potential early failure cells. Method and circuit implementation of such a stress test for a MRAM comprise coupling a stress test circuit to the read bus of the MRAM and stressing the Magnetic Tunnel Junctions (MTJS) by tying them to ground by activating isolation transistors associated with them. Read word lines control which MTJs are stressed Both the method and implementation can be used for any memory cells based on resistance differences, such as Phase RAM or Spin Valve MRAM.
摘要翻译：磁性随机存取存储器（MRAM）电池的电压和电流应力可以消除潜在的早期故障电池。用于MRAM的这种应力测试的方法和电路实现包括将应力测试电路耦合到MRAM的读总线，并通过激活与它们相关联的隔离晶体管将它们绑定到地来强调磁隧道接合点（MTJS）。读取字线控制哪些MTJ受到压力这两种方法和实现都可以用于基于电阻差异的任何存储单元，如相位RAM或自旋阀MRAM。

98. 发明申请

US20090086531A1 Method and implementation of stress test for MRAM 有权
公开(公告)号：US20090086531A1
公开(公告)日：2009-04-02
申请号：US11904434
申请日：2007-09-27
申请人： Hsu Kai Yang , Lejan Pu , Perng-Fei Yuh , Po-Kang Wang
发明人： Hsu Kai Yang , Lejan Pu , Perng-Fei Yuh , Po-Kang Wang
IPC分类号： G11C11/00 , G11C29/00
CPC分类号： G11C11/16 , G11C29/06 , G11C29/08 , G11C29/12005
摘要： Voltage and current stress for magnetic random access memory (MRAM) cells can weed out potential early failure cells. Method and circuit implementation of such a stress test for a MRAM comprise coupling a stress test circuit to the read bus of the MRAM and stressing the Magnetic Tunnel Junctions (MTJS) by tying them to ground by activating isolation transistors associated with them. Read word lines control which MTJs are stressed Both the method and implementation can be used for any memory cells based on resistance differences, such as Phase RAM or Spin Valve MRAM.

99. 发明授权

US07394247B1 Magnetic field angle sensor with GMR or MTJ elements 有权
标题翻译：具有GMR或MTJ元件的磁场角传感器
公开(公告)号：US07394247B1
公开(公告)日：2008-07-01
申请号：US11881349
申请日：2007-07-26
申请人： Yimin Guo , Grace Gorman , Po-Kang Wang
发明人： Yimin Guo , Grace Gorman , Po-Kang Wang
IPC分类号： G01R33/09 , G01B7/30
CPC分类号： G01R33/093 , B82Y25/00 , G01D5/145 , G01R33/098
摘要： The invention discloses a sensor for 360-degree magnetic field angle measurement. It comprises multiple GMR (or MTJ) stripes with identical geometries except for their orientations. These are used as the building blocks for a pair of Wheatstone bridges that signal the direction of magnetization of their environment. The design greatly enhances sensitivity within GMR stripes and does not require an additional Hall sensor in order to cover the full 360 degree measurement range.
摘要翻译：本发明公开了一种用于360度磁场角测量的传感器。它包括除了它们的取向之外具有相同几何形状的多个GMR（或MTJ）条纹。这些被用作一对惠斯通电桥的结构，它们表示了它们的环境的磁化方向。该设计极大地提高了GMR条纹下的灵敏度，并且不需要额外的霍尔传感器来覆盖整个360度的测量范围。

100. 发明授权

US07369430B2 Adaptive algorithm for MRAM manufacturing 失效
公开(公告)号：US07369430B2
公开(公告)日：2008-05-06
申请号：US11485196
申请日：2006-07-12
申请人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G11C11/00
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式