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1. 发明授权

US07224628B2 Adaptive algorithm for MRAM manufacturing 失效
标题翻译： MRAM制造的自适应算法
公开(公告)号：US07224628B2
公开(公告)日：2007-05-29
申请号：US11486192
申请日：2006-07-13
申请人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G11C7/00
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.
摘要翻译：磁性随机存取存储器（MRAM）可以与静态随机存取存储器（SRAM）一样快速编程和读取，并且具有电可擦除可编程只读存储器（EEPROM），闪存EEPROM或一次可编程（OTP）的非易失性特性）EPROM。由于制造过程的随机性，MRAM单元中的磁隧道结（MTJ）将需要不同的行和列电流组合来编程，而不会干扰其他单元。基于用于编程的自适应电流源，本公开教导了用于从MRAM生成EEPROM，FLASH EEPROM或OTP EPROM的存储器的方法，设计，测试算法和制造流程。

2. 发明授权

US07369430B2 Adaptive algorithm for MRAM manufacturing 失效
公开(公告)号：US07369430B2
公开(公告)日：2008-05-06
申请号：US11485196
申请日：2006-07-12
申请人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G11C11/00
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

3. 发明授权

US07321519B2 Adaptive algorithm for MRAM manufacturing 失效
标题翻译： MRAM制造的自适应算法
公开(公告)号：US07321519B2
公开(公告)日：2008-01-22
申请号：US11485195
申请日：2006-07-12
申请人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G11C7/00
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.
摘要翻译：磁性随机存取存储器（MRAM）可以与静态随机存取存储器（SRAM）一样快速编程和读取，并且具有电可擦除可编程只读存储器（EEPROM），闪存EEPROM或一次可编程（OTP）的非易失性特性）EPROM。由于制造过程的随机性，MRAM单元中的磁隧道结（MTJ）将需要不同的行和列电流组合来编程，而不会干扰其他单元。基于用于编程的自适应电流源，本公开教导了用于从MRAM生成EEPROM，FLASH EEPROM或OTP EPROM的存储器的方法，设计，测试算法和制造流程。

4. 发明授权

US07085183B2 Adaptive algorithm for MRAM manufacturing 有权
公开(公告)号：US07085183B2
公开(公告)日：2006-08-01
申请号：US10889911
申请日：2004-07-13
申请人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G11C7/00
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

5. 发明申请

US20060013038A1 Adaptive algorithm for MRAM manufacturing 有权
公开(公告)号：US20060013038A1
公开(公告)日：2006-01-19
申请号：US10889911
申请日：2004-07-13
申请人： Hsu Kaiyang , Xizeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Kaiyang , Xizeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G11C11/14
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

6. 发明申请

US20050276098A1 Method and system for providing common read and write word lines for a segmented word line MRAM array 失效
标题翻译：用于为分段字线MRAM阵列提供通用读写字线的方法和系统
公开(公告)号：US20050276098A1
公开(公告)日：2005-12-15
申请号：US10865722
申请日：2004-06-09
申请人： Hsu Yang , Xizeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Yang , Xizeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： B01F15/02 , G11C11/00 , G11C11/16
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.
摘要翻译：公开了一种用于提供包括与字线段相关联的磁存储单元的磁存储器的方法和系统。磁存储单元包括磁存储装置和隔离装置。隔离装置耦合到磁性隧道结，并具有用于读取和写入磁性存储器单元的组合字线。磁存储装置和隔离装置被配置成使得在写入磁存储单元期间不存在直接到地面的地面路径。一方面，在写入模式中，与字线段和字线段相关联的组合字线被激活。在读取模式中，使用组合字线来选择与字线段相关联的至少一部分存储单元。

7. 发明申请

US20060250867A1 Adaptive algorithim for MRAM manufacturing 失效
标题翻译： MRAM制造的自适应算法
公开(公告)号：US20060250867A1
公开(公告)日：2006-11-09
申请号：US11486192
申请日：2006-07-13
申请人： Hsu Yang , Xi Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Yang , Xi Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G11C29/00
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.
摘要翻译：磁性随机存取存储器（MRAM）可以与静态随机存取存储器（SRAM）一样快速编程和读取，并且具有电可擦除可编程只读存储器（EEPROM），闪存EEPROM或一次可编程（OTP）的非易失性特性）EPROM。由于制造过程的随机性，MRAM单元中的磁隧道结（MTJ）将需要不同的行和列电流组合来编程，而不会干扰其他单元。基于用于编程的自适应电流源，本公开教导了用于从MRAM生成EEPROM，FLASH EEPROM或OTP EPROM的存储器的方法，设计，测试算法和制造流程。

8. 发明申请

US20060250865A1 Adaptive algorithm for MRAM manufacturing 失效
公开(公告)号：US20060250865A1
公开(公告)日：2006-11-09
申请号：US11485195
申请日：2006-07-12
申请人： Hsu Yang , Xi Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Yang , Xi Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G11C29/00
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

9. 发明申请

US20050276100A1 Method and system for optimizing the number of word line segments in a segmented MRAM array 失效
标题翻译：用于优化分段MRAM阵列中字线段数量的方法和系统
公开(公告)号：US20050276100A1
公开(公告)日：2005-12-15
申请号：US10865717
申请日：2004-06-09
申请人： Hsu Yang , Xizeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Yang , Xizeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G06F12/00 , G11C8/14 , G11C11/14 , G11C11/15
CPC分类号： G11C11/15 , G11C8/14
摘要： A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. In one aspect, the method and system also include utilizing at least one storage for storing a state of each of the magnetic storage cells determined during a read operation made during a write operation. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segment at substantially the same time as the portion of the magnetic cells are written.
摘要翻译：公开了一种用于编程和读取磁存储器的方法和系统。磁存储器包括多个可选字线段和对应于每个字线段的多个磁存储单元。该方法和系统包括读取对应于字线段的磁存储单元以确定每个磁存储单元的状态。一方面，该方法和系统还包括利用至少一个存储器来存储在写入操作期间进行的读取操作期间确定的每个磁存储单元的状态。该方法和系统还包括在读取之后将数据写入对应于字线段的磁性单元的一部分。所述方法和系统还包括将所述状态重写为与写入所述磁性单元的所述部分基本相同的时间对应于所述字线段的所述磁存储单元的剩余部分。

10. 发明申请

US20060250866A1 Adaptive algorithm for MRAM manufacturing 失效
标题翻译： MRAM制造的自适应算法
公开(公告)号：US20060250866A1
公开(公告)日：2006-11-09
申请号：US11485196
申请日：2006-07-12
申请人： Hsu Yang , Xi Shi , Po Wang , Bruce Yang
发明人： Hsu Yang , Xi Shi , Po Wang , Bruce Yang
IPC分类号： G11C29/00
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.
摘要翻译：磁性随机存取存储器（MRAM）可以与静态随机存取存储器（SRAM）一样快速编程和读取，并且具有电可擦除可编程只读存储器（EEPROM），闪存EEPROM或一次可编程（OTP）的非易失性特性）EPROM。由于制造过程的随机性，MRAM单元中的磁隧道结（MTJ）将需要不同的行和列电流组合来编程，而不会干扰其他单元。基于用于编程的自适应电流源，本公开教导了用于从MRAM生成EEPROM，FLASH EEPROM或OTP EPROM的存储器的方法，设计，测试算法和制造流程。

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