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91. 发明授权

US07450296B2 Method and system for patterning alignment marks on a transparent substrate 有权
标题翻译：在透明基板上图案化对准标记的方法和系统
公开(公告)号：US07450296B2
公开(公告)日：2008-11-11
申请号：US11400974
申请日：2006-04-10
申请人： Ruei-Hung Jang , Ya-Wen Lee , Tzu-Yang Wu , Sheng-Liang Pan , Chin-Hsiang Lin , Tsai-Sheng Gau
发明人： Ruei-Hung Jang , Ya-Wen Lee , Tzu-Yang Wu , Sheng-Liang Pan , Chin-Hsiang Lin , Tsai-Sheng Gau
IPC分类号： G02B26/00 , G02B26/08
CPC分类号： G02B26/0841
摘要： Disclosed is a method and a system for forming alignment marks on a transparent substrate. A light reflective layer is deposited over an optically transparent substrate of a wafer. A region is defined around an alignment mark on the optically transparent substrate. The light reflective layer is removed from a substantial portion of the transparent substrate excluding the region. In addition, a micro electro-mechanical systems device is disclosed. The device comprises an optically transparent substrate, at least one optically partially transparent alignment mark on the optically transparent substrate, and a plurality of reflective elements or imaging pixels attached to the optically transparent substrate.
摘要翻译：公开了一种在透明基板上形成对准标记的方法和系统。光反射层沉积在晶片的光学透明衬底上。围绕光学透明基板上的对准标记限定区域。除了该区域之外，从透明基板的大部分除去光反射层。另外，公开了一种微电子机械系统装置。该器件包括光学透明衬底，在光学透明衬底上的至少一个光学部分透明的对准标记，以及附接到光学透明衬底的多个反射元件或成像像素。

92. 发明申请

US20080054191A1 NOVEL WAFER REPAIR METHOD USING DIRECT-WRITING 有权
标题翻译：使用直写功能的新型波形修复方法
公开(公告)号：US20080054191A1
公开(公告)日：2008-03-06
申请号：US11934512
申请日：2007-11-02
申请人： Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
发明人： Chin-Hsiang Lin , Burn Lin , Tsai-Sheng Gau
IPC分类号： B05C11/00 , G21G5/00 , A61N5/00
CPC分类号： G03F7/7065 , G03F7/70383 , H01L22/22 , H01L2924/0002 , H01L2924/00
摘要： A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.
摘要翻译：晶片修复的方法包括识别半导体晶片中的缺陷区域的位置和图案; 将缺陷区域的位置和图案传送到直写工具; 在半导体晶片上形成光致抗蚀剂层; 使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片上显影光致抗蚀剂层; 并在曝光和显影之后将光致抗蚀剂层下方的半导体晶片进行晶片处理。

93. 发明申请

US20070264594A1 Method of Inhibiting Photoresist Pattern Collapse 有权
标题翻译：抑制光刻胶图案折叠的方法
公开(公告)号：US20070264594A1
公开(公告)日：2007-11-15
申请号：US11746202
申请日：2007-05-09
申请人： Ching-Yu Chang , Heng-Jen Lee , Chin-Hsiang Lin , Hua-Tai Lin , Kuei Shun Chen , Bang-Chein Ho , Li-Kong Turn , Hung-Jui Kuo , Ko-Bin Kao , Tsung-Chih Chien
发明人： Ching-Yu Chang , Heng-Jen Lee , Chin-Hsiang Lin , Hua-Tai Lin , Kuei Shun Chen , Bang-Chein Ho , Li-Kong Turn , Hung-Jui Kuo , Ko-Bin Kao , Tsung-Chih Chien
IPC分类号： G03F7/40
CPC分类号： G03F7/40
摘要： A method of inhibiting photoresist pattern collapse which includes the steps of providing a substrate; providing a photoresist layer on the substrate; exposing and developing the photoresist layer; applying a top anti-reflective coating layer to the photoresist layer; rinsing the photoresist layer; and drying the photoresist layer.
摘要翻译：一种抑制光致抗蚀剂图案塌陷的方法，包括提供基底的步骤; 在衬底上提供光致抗蚀剂层; 曝光和显影光致抗蚀剂层; 将顶部抗反射涂层施加到光致抗蚀剂层上; 冲洗光刻胶层; 并干燥光刻胶层。

94. 发明申请

US20070099432A1 METHOD FOR PHOTOLITHOGRAPHY IN SEMICONDUCTOR MANUFACTURING 有权
标题翻译：半导体制造中的光刻技术
公开(公告)号：US20070099432A1
公开(公告)日：2007-05-03
申请号：US11347513
申请日：2006-02-03
申请人： Chin-Hsiang Lin
发明人： Chin-Hsiang Lin
IPC分类号： C23F1/00 , H01L21/302 , B44C1/22 , H01L21/461
CPC分类号： H01L21/0271 , G03F7/40 , G03F7/405 , H01L21/0332 , H01L21/31144 , H01L21/32139
摘要： The present disclosure relates generally to the manufacturing of semiconductor devices. In one example, a method for forming a portion of a semiconductor device includes forming a photo sensitive layer over a substrate, developing the photo sensitive layer to expose a portion of the substrate and to create a seed layer from at least a portion of the photo sensitive layer remaining after the developing, forming an etch stop layer only on the seed layer, and etching the substrate using the etch stop layer as a mask.
摘要翻译：本公开一般涉及半导体器件的制造。在一个示例中，用于形成半导体器件的一部分的方法包括在衬底上形成感光层，使光敏层显影以暴露衬底的一部分并从照片的至少一部分创建晶种层在显影之后残留的敏感层，仅在种子层上形成蚀刻停止层，并且使用蚀刻停止层作为掩模蚀刻该衬底。

95. 发明申请

US20070039631A1 System and method for removing particles in semiconductor manufacturing 有权
标题翻译：用于去除半导体制造中的颗粒的系统和方法
公开(公告)号：US20070039631A1
公开(公告)日：2007-02-22
申请号：US11204691
申请日：2005-08-16
申请人： Chen-Yuan Hsia , Chang-Cheng Hung , Chi-Lun Lu , Shih-Ming Chang , Wen-Chuan Wang , Yen-Bin Huang , Ching-Yu Chang , Chin-Hsiang Lin
发明人： Chen-Yuan Hsia , Chang-Cheng Hung , Chi-Lun Lu , Shih-Ming Chang , Wen-Chuan Wang , Yen-Bin Huang , Ching-Yu Chang , Chin-Hsiang Lin
IPC分类号： B08B3/12 , B08B3/00 , C23G1/00 , B08B5/04
CPC分类号： B08B6/00 , B08B5/00 , H01L21/02057 , H01L21/67017 , H01L21/67051
摘要： A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.
摘要翻译：一种用于半导体晶片制造的系统，包括用于处理晶片的腔室处理路径，以及可操作以通过静电和电磁方法从晶片去除颗粒的装置，其中该装置安装在室过程路径中。

96. 发明申请

US20060281299A1 METHOD OF FABRICATING SILICON CARBIDE-CAPPED COPPER DAMASCENE INTERCONNECT 审中-公开
标题翻译：硅碳化铜复合物互连的制备方法
公开(公告)号：US20060281299A1
公开(公告)日：2006-12-14
申请号：US11462045
申请日：2006-08-03
申请人： Jei-Ming Chen , Chin-Hsiang Lin , Chih-Chien Liu , Kuo-Chih Lai
发明人： Jei-Ming Chen , Chin-Hsiang Lin , Chih-Chien Liu , Kuo-Chih Lai
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L21/76849 , C23C16/0245 , C23C16/325 , H01L21/3148 , H01L21/76834 , H01L21/76867 , H01L21/76883 , H01L21/76889 , H01L23/48
摘要： A dielectric layer overlying a substrate is prepared. A damascene opening is etched into the dielectric layer. The damascene opening is filled with copper or copper alloy. A surface of the copper or copper alloy is treated with hydrogen-containing plasma such as H2 or NH3 plasma. The treated surface of the copper or copper alloy then reacts with trimethylsilane or tertramethylsilane under plasma enhanced chemical vapor deposition (PECVD) conditions. Subsequently, by PECVD, a silicon carbide layer is in-situ deposited on the copper or copper alloy.
摘要翻译：准备覆盖衬底的电介质层。镶嵌开口蚀刻到电介质层中。镶嵌开口填充有铜或铜合金。铜或铜合金的表面用含氢等离子体如H 2 N 3或NH 3 3等离子体处理。然后在等离子体增强化学气相沉积（PECVD）条件下，铜或铜合金的处理表面与三甲基硅烷或三甲基硅烷反应。随后，通过PECVD，将碳化硅层原位沉积在铜或铜合金上。

97. 发明申请

US20060211237A1 Method and apparatus for planarizing gap-filling material 审中-公开
标题翻译：用于平坦化间隙填充材料的方法和装置
公开(公告)号：US20060211237A1
公开(公告)日：2006-09-21
申请号：US11085295
申请日：2005-03-21
申请人： Kuei-Shun Chen , Chin-Hsiang Lin , T. Lin , Chia-Hsiang Lin
发明人： Kuei-Shun Chen , Chin-Hsiang Lin , T. Lin , Chia-Hsiang Lin
IPC分类号： H01L21/4763 , B30B9/00
CPC分类号： H01L21/76819 , H01L21/76808
摘要： A method an apparatus for fabricating an interconnection structure. A substrate is provided with a dielectric layer thereon. The dielectric layer comprises at least one opening therein. A gap-filling material is applied on the substrate filling the at least one opening. The gap-filling material is planarized using a template to create a substantially planarized surface.
摘要翻译：一种用于制造互连结构的装置的方法。衬底上设置有介电层。电介质层包括至少一个开口。在填充至少一个开口的基板上施加间隙填充材料。间隙填充材料使用模板进行平面化，以形成基本平坦的表面。

98. 发明申请

US20050147895A1 Holographic reticle and patterning method 有权
标题翻译：全息掩模版和图案化方法
公开(公告)号：US20050147895A1
公开(公告)日：2005-07-07
申请号：US10792084
申请日：2004-03-03
申请人： Shih-Ming Chang , Chung-Hsing Chang , Chih-Cheng Chin , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin
发明人： Shih-Ming Chang , Chung-Hsing Chang , Chih-Cheng Chin , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin
IPC分类号： G03F1/14 , G03H1/00 , G03H1/08 , G03C5/00 , G03F9/00 , G03H1/04
CPC分类号： G03F7/70291 , G03F1/50 , G03H1/0005 , G03H1/0244 , G03H1/0808 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2210/452 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译：全息图掩模版和图案化目标的方法。要传输到目标的图像的布局图案被转换成图像的全息图。制造包括全息图的全息标线。然后使用全息图标线来对目标进行图案化。可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。可以填充这些三维图案以形成三维结构。图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。下部光致抗蚀剂层用于对该器件的材料层进行图案化。

99. 发明授权

US06638879B2 Method for forming nitride spacer by using atomic layer deposition 有权
标题翻译：通过原子层沉积形成氮化物间隔物的方法
公开(公告)号：US06638879B2
公开(公告)日：2003-10-28
申请号：US10003317
申请日：2001-12-06
申请人： Jung-Yu Hsieh , Chin-Hsiang Lin
发明人： Jung-Yu Hsieh , Chin-Hsiang Lin
IPC分类号： H01L21477
CPC分类号： H01L21/0228 , C23C16/345 , C23C16/45525 , H01L21/0217 , H01L21/02211 , H01L21/3141 , H01L21/3185 , H01L29/6659
摘要： The present invention provides a method for forming a silicon nitride spacer by using an atomic layer deposition (ALD) method. The procedure of the ALD is to use a first kind of excess gas as a reactant air and thus produce a first mono-layer solid phase of the first reactant air on the wafer. When the first chemical reaction is completed, the first excess air is drawn out, and then the second excess air is released to deposit a second mono-layer solid phase of the second reactant air on the first mono-layer solid phase. In this way, a whole deposited layer with a layer of the first mono-layer solid phase, a layer of the second mono-layer solid phase, and so on are stepwise formed on the wafer surface. The ALD method is a time consuming task in deposition process such as in the generation of 0.35 &mgr;m to 0.5 &mgr;m of VLSI ages. However, in the generation of 0.18 &mgr;m, 0.13 &mgr;m or beyond of VLSI ages, because the device is getting smaller than ever before, the deposition speed of the ALD method is just right on time to meet the demand and is an appropriate method in depositing silicon nitride spacer.
摘要翻译：本发明提供了通过使用原子层沉积（ALD）方法形成氮化硅间隔物的方法。 ALD的过程是使用第一种过量气体作为反应物空气，从而在晶片上产生第一反应物空气的第一单层固相。当第一化学反应完成时，第一过量空气被抽出，然后第二过量空气被释放，以将第二反应物空气的第二单层固相沉积在第一单层固相上。以这种方式，在晶片表面上逐步形成具有第一单层固相层，第二单层固相层等的全部沉积层。 ALD方法在沉积过程中是耗时的任务，例如在0.35m至0.5mil的VLSI年龄的产生中。但是，由于器件比以往任何时候都要小，所以在0.18微米，0.13微米或超过VLSI的时代，ALD方法的沉积速度正好准时满足需求，是一种适当的方法氮化硅间隔物。

100. 发明授权

US06215578B1 Electronically switchable off-axis illumination blade for stepper illumination system 有权
标题翻译：用于步进照明系统的电子可切换离轴照明刀片
公开(公告)号：US06215578B1
公开(公告)日：2001-04-10
申请号：US09156056
申请日：1998-09-17
申请人： Chin-Hsiang Lin
发明人： Chin-Hsiang Lin
IPC分类号： G02B2600
CPC分类号： G03F7/70091 , G03F7/70116 , G03F7/70125 , G03F7/70291
摘要： An off axis illumination stepper exposure system includes an illumination system with an aperture element and lenses. The aperture element comprises an array of electronically switchable pixels in a matrix. The aperture element can be a transmissive spatial light modulator. An annular pattern of transmissivity through an aperture element is provided by a spatial light modulator operated under computer control. The computer can select and provide variable dimensions of the pattern to optimize operation of the device. In addition to a first transmissive spatial light modulator providing an aperture in the illumination system with a pattern of transmissivity operated under computer control, a mask is provided in the form of a second transmissive spatial light modulator operated under computer control operating cooperatively to provide images projected through a projection system onto a workpiece supported upon a stepper tool.
摘要翻译：离轴照明步进曝光系统包括具有光圈元件和透镜的照明系统。孔径元件包括矩阵中的电子可切换像素的阵列。孔径元件可以是透射空间光调制器。通过孔径元件的透射率的环形图案由在计算机控制下操作的空间光调制器提供。计算机可以选择并提供模式的可变维度以优化设备的操作。除了第一透射空间光调制器之外，在照明系统中提供一个在计算机控制下操作的透射图案的孔径，掩模以第二透射空间光调制器的形式提供，该第二透射空间光调制器在计算机控制下协同工作以提供图像投影通过投影系统到支撑在步进工具上的工件上。

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